[go: up one dir, main page]

JPS57115556A - Photoconductive material - Google Patents

Photoconductive material

Info

Publication number
JPS57115556A
JPS57115556A JP56002273A JP227381A JPS57115556A JP S57115556 A JPS57115556 A JP S57115556A JP 56002273 A JP56002273 A JP 56002273A JP 227381 A JP227381 A JP 227381A JP S57115556 A JPS57115556 A JP S57115556A
Authority
JP
Japan
Prior art keywords
layer
photoconductive
silicon
carbon
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56002273A
Other languages
Japanese (ja)
Inventor
Shigeru Shirai
Junichiro Kanbe
Tadaharu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56002273A priority Critical patent/JPS57115556A/en
Publication of JPS57115556A publication Critical patent/JPS57115556A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To enhance stability of photoconductive characteristics in all the environmental conditions, and durability, etc., by providing a photoconductive amorphous silicon layer containing either or both of H or halogen, on a conductive substrate, and forming on this layer a nonphotoconductive amorphous layer containing silicon and carbon. CONSTITUTION:A photoconductive amorphous silicon layer 102 containing either or both of H and halogen is formed on a conductive substrate 101, and on this layer 102 a nonphotoconductive amorphous layer 103, 3-5,000nm thick, containing 40-90atom% carbon, and silicon is formed by sputtering using a wafer containing silicon and carbon as a target, or the like method. The obtained photoconductive material positively charged can form a superior image with negatively charged toner by doping the layer 102 with B, Al, or the like to give P- type tendency, and the material 100 negatively charged can obtain a superior image using positively charged toner by doping the layer 102 with N, P, or the like to give N-type tendency.
JP56002273A 1981-01-09 1981-01-09 Photoconductive material Pending JPS57115556A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56002273A JPS57115556A (en) 1981-01-09 1981-01-09 Photoconductive material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56002273A JPS57115556A (en) 1981-01-09 1981-01-09 Photoconductive material

Publications (1)

Publication Number Publication Date
JPS57115556A true JPS57115556A (en) 1982-07-19

Family

ID=11524754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56002273A Pending JPS57115556A (en) 1981-01-09 1981-01-09 Photoconductive material

Country Status (1)

Country Link
JP (1) JPS57115556A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986053A (en) * 1982-11-09 1984-05-18 Seiko Epson Corp Photosensitive drum
JPS6010620A (en) * 1983-06-29 1985-01-19 Fuji Electric Corp Res & Dev Ltd Plasma cvd method
JPS60169854A (en) * 1984-02-14 1985-09-03 Sanyo Electric Co Ltd Electrostatic latent image bearing body
US4555464A (en) * 1983-07-06 1985-11-26 Fuji Photo Film Co., Ltd. Amorphous silicon electrophotographic photosensitive materials
US4687722A (en) * 1983-08-03 1987-08-18 Canon Kabushiki Kaisha Image holder member with overlayer of amorphous Si with H and C
JPH05257311A (en) * 1992-08-28 1993-10-08 Seiko Epson Corp Photosensitive drum
US5455138A (en) * 1992-10-23 1995-10-03 Canon Kabushiki Kaisha Process for forming deposited film for light-receiving member, light-receiving member produced by the process, deposited film forming apparatus, and method for cleaning deposited film forming apparatus
US5670286A (en) * 1995-03-17 1997-09-23 Canon Kabushiki Kaisha Electrophotographic light receiving member having an outermost surface with a specific metal element-bearing region and a region substantially free of said metal element which are two-dimensionally distributed
US5738963A (en) * 1995-08-23 1998-04-14 Canon Kabushiki Kaisha Light-receiving member for electrophotography having a photoconductive layer composed of a first layer region and a second layer region having different energy bandgaps and characteristic energies
US5939230A (en) * 1996-05-23 1999-08-17 Canon Kabushiki Kaisha Light receiving member
US5945241A (en) * 1996-08-29 1999-08-31 Canon Kabushiki Kaisha Light receiving member for electrophotography and fabrication process thereof
US6090513A (en) * 1994-04-27 2000-07-18 Canon Kabushiki Kaisha Eclectrophotographic light-receiving member and process for its production
US6272301B1 (en) 1998-09-22 2001-08-07 Canon Kabushiki Kaisha Image forming apparatus featuring a rotatable electroconductive foam member
US6285385B1 (en) 1998-12-25 2001-09-04 Canon Kabushiki Kaisha Electrophotographic method and apparatus which employs light beam irradiation to form an electrostatic image on a surface of a photosensitive member
US6294299B2 (en) 1997-08-22 2001-09-25 Canon Kabushiki Kaisha Electrophotographic light-receiving member
US6379852B2 (en) 1996-09-11 2002-04-30 Canon Kabushiki Kaisha Electrophotographic light-receiving member
US6435130B1 (en) 1996-08-22 2002-08-20 Canon Kabushiki Kaisha Plasma CVD apparatus and plasma processing method
US6605405B2 (en) 2000-07-26 2003-08-12 Canon Kabushiki Kaisha Electrophotographic method and electrophotographic apparatus
US6632578B2 (en) 1995-12-26 2003-10-14 Canon Kabushiki Kaisha Electrophotographic light-receiving member and process for its production
US6635397B2 (en) 2001-04-24 2003-10-21 Canon Kabushiki Kaisha Negative-charging electrophotographic photosensitive member
US6991879B2 (en) 2002-08-09 2006-01-31 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US7229731B2 (en) 2004-11-05 2007-06-12 Canon Kabushiki Kaisha Electrophotographic photosensitive member and electrophotographic apparatus using the electrophotographic photosensitive member

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986053A (en) * 1982-11-09 1984-05-18 Seiko Epson Corp Photosensitive drum
JPS6010620A (en) * 1983-06-29 1985-01-19 Fuji Electric Corp Res & Dev Ltd Plasma cvd method
US4555464A (en) * 1983-07-06 1985-11-26 Fuji Photo Film Co., Ltd. Amorphous silicon electrophotographic photosensitive materials
US4687722A (en) * 1983-08-03 1987-08-18 Canon Kabushiki Kaisha Image holder member with overlayer of amorphous Si with H and C
JPS60169854A (en) * 1984-02-14 1985-09-03 Sanyo Electric Co Ltd Electrostatic latent image bearing body
JPH05257311A (en) * 1992-08-28 1993-10-08 Seiko Epson Corp Photosensitive drum
US5455138A (en) * 1992-10-23 1995-10-03 Canon Kabushiki Kaisha Process for forming deposited film for light-receiving member, light-receiving member produced by the process, deposited film forming apparatus, and method for cleaning deposited film forming apparatus
US5817181A (en) * 1992-10-23 1998-10-06 Canon Kabushiki Kaisha Process for forming deposited film for light-receiving member, light-received member produced by the process deposited film forming apparatus, and method for cleaning deposited film forming apparatus
US6090513A (en) * 1994-04-27 2000-07-18 Canon Kabushiki Kaisha Eclectrophotographic light-receiving member and process for its production
US5670286A (en) * 1995-03-17 1997-09-23 Canon Kabushiki Kaisha Electrophotographic light receiving member having an outermost surface with a specific metal element-bearing region and a region substantially free of said metal element which are two-dimensionally distributed
US5738963A (en) * 1995-08-23 1998-04-14 Canon Kabushiki Kaisha Light-receiving member for electrophotography having a photoconductive layer composed of a first layer region and a second layer region having different energy bandgaps and characteristic energies
US6632578B2 (en) 1995-12-26 2003-10-14 Canon Kabushiki Kaisha Electrophotographic light-receiving member and process for its production
US5939230A (en) * 1996-05-23 1999-08-17 Canon Kabushiki Kaisha Light receiving member
US6435130B1 (en) 1996-08-22 2002-08-20 Canon Kabushiki Kaisha Plasma CVD apparatus and plasma processing method
US5945241A (en) * 1996-08-29 1999-08-31 Canon Kabushiki Kaisha Light receiving member for electrophotography and fabrication process thereof
US6379852B2 (en) 1996-09-11 2002-04-30 Canon Kabushiki Kaisha Electrophotographic light-receiving member
US6294299B2 (en) 1997-08-22 2001-09-25 Canon Kabushiki Kaisha Electrophotographic light-receiving member
US6272301B1 (en) 1998-09-22 2001-08-07 Canon Kabushiki Kaisha Image forming apparatus featuring a rotatable electroconductive foam member
US6285385B1 (en) 1998-12-25 2001-09-04 Canon Kabushiki Kaisha Electrophotographic method and apparatus which employs light beam irradiation to form an electrostatic image on a surface of a photosensitive member
US6605405B2 (en) 2000-07-26 2003-08-12 Canon Kabushiki Kaisha Electrophotographic method and electrophotographic apparatus
US6635397B2 (en) 2001-04-24 2003-10-21 Canon Kabushiki Kaisha Negative-charging electrophotographic photosensitive member
US6991879B2 (en) 2002-08-09 2006-01-31 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US7229731B2 (en) 2004-11-05 2007-06-12 Canon Kabushiki Kaisha Electrophotographic photosensitive member and electrophotographic apparatus using the electrophotographic photosensitive member

Similar Documents

Publication Publication Date Title
JPS57115556A (en) Photoconductive material
JPS5486341A (en) Electrophotographic photoreceptor
JPS57177156A (en) Photoconductive material
JPS55127561A (en) Image forming member for electrophotography
JPS55159445A (en) Electrophotographic receptor
JPS56135980A (en) Photoelectric conversion element
JPS5625743A (en) Electrophotographic receptor
JPS5664347A (en) Electrophotographic receptor
JPS5389435A (en) Electrophotographic photosensitive plate
JPS57132155A (en) Photoelectric transducer
JPS564150A (en) Electrophotographic receptor
JPS5758160A (en) Photoconductive member
JPS5250238A (en) Amorphous selenium.tellurium electrophotographic light sensitive mater ial
JPS5758161A (en) Photoconductive member
JPS5721875A (en) Photosensor
JPS5575264A (en) Charge transfer element
JPS57176057A (en) Electrophotographic receptor
JPS55140277A (en) Organic phtotovoltaic element
JPS57115557A (en) Photoconductive material
JPS57115555A (en) Photoconductive material
JPS5470838A (en) Photosensitive element for zerography
JPS57115558A (en) Photoconductive material
JPS5674253A (en) Photoreceptor for electrophotography
JPS576852A (en) Electrophotographic receptor
JPS564151A (en) Electrophotographic receptor