[go: up one dir, main page]

JPS5575264A - Charge transfer element - Google Patents

Charge transfer element

Info

Publication number
JPS5575264A
JPS5575264A JP14943578A JP14943578A JPS5575264A JP S5575264 A JPS5575264 A JP S5575264A JP 14943578 A JP14943578 A JP 14943578A JP 14943578 A JP14943578 A JP 14943578A JP S5575264 A JPS5575264 A JP S5575264A
Authority
JP
Japan
Prior art keywords
electrodes
transfer electrodes
potential
storage
manufactured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14943578A
Other languages
Japanese (ja)
Other versions
JPS617035B2 (en
Inventor
Kazuyasu Fujishima
Michihiro Yamada
Tetsuo Tada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14943578A priority Critical patent/JPS5575264A/en
Publication of JPS5575264A publication Critical patent/JPS5575264A/en
Publication of JPS617035B2 publication Critical patent/JPS617035B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/478—Four-phase CCD

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To stabilize operation against noises, by providing potential barriers at parts of charge transfer electrodes. CONSTITUTION:p<+>-Layer 8 are provided on parts of a p-type silicon substrate for manufacturing transfer electrodes 4a, 4b. Storage electrodes 3a, 3b are manufactured through an SiO2 film 2. A thick SiO2 film 2a is produced between the electrodes 3a, 3b. The transfer electrodes 4a, 4b are manufactured on the film 2a. The surface potential on the transfer electrodes 4a, 4b is thus made higher than that on the storage electrodes 3a, 3b. As a result, signal charge is prevented by the action of potential barriers from overflowing the storage electrode 3b and mixing with ambient signal charge even if the depth of bottoms of potential wells decrease due to noises. Therefore, the SN ratio does not deteriorate.
JP14943578A 1978-12-01 1978-12-01 Charge transfer element Granted JPS5575264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14943578A JPS5575264A (en) 1978-12-01 1978-12-01 Charge transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14943578A JPS5575264A (en) 1978-12-01 1978-12-01 Charge transfer element

Publications (2)

Publication Number Publication Date
JPS5575264A true JPS5575264A (en) 1980-06-06
JPS617035B2 JPS617035B2 (en) 1986-03-03

Family

ID=15475042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14943578A Granted JPS5575264A (en) 1978-12-01 1978-12-01 Charge transfer element

Country Status (1)

Country Link
JP (1) JPS5575264A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6693517B2 (en) 2000-04-21 2004-02-17 Donnelly Corporation Vehicle mirror assembly communicating wirelessly with vehicle accessories and occupants
WO2007053710A2 (en) 2005-11-01 2007-05-10 Donnelly Corporation Interior rearview mirror with display
US7581859B2 (en) 2005-09-14 2009-09-01 Donnelly Corp. Display device for exterior rearview mirror
US7310177B2 (en) 2002-09-20 2007-12-18 Donnelly Corporation Electro-optic reflective element assembly
US20100020170A1 (en) 2008-07-24 2010-01-28 Higgins-Luthman Michael J Vehicle Imaging System

Also Published As

Publication number Publication date
JPS617035B2 (en) 1986-03-03

Similar Documents

Publication Publication Date Title
JPS56125868A (en) Thin-film semiconductor device
JPS57115556A (en) Photoconductive material
JPS5575264A (en) Charge transfer element
JPS5323281A (en) Charge transfer el ement
JPS53123687A (en) Binary memory element
JPS56103448A (en) Semiconductor ic device
JPS56125881A (en) Optical semiconductor element
JPS5739571A (en) Constant current diode
JPS5617059A (en) Semiconductor switching element
JPS5345527A (en) Formation of electrostatic latent image
JPS5367388A (en) Memory semiconductor device
JPS5660045A (en) Semiconductor device
JPS5287373A (en) Production of semiconductor device
JPS57116346A (en) Photoconductive material
JPS52127190A (en) Semiconductor laser device
JPS57115555A (en) Photoconductive material
JPS5342564A (en) Semiconductor element and its production
JPS5453869A (en) Semiconductor device
JPS5778181A (en) Semiconductor variable capacity element
JPS538582A (en) Semiconductor memory unit
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface
JPS5297679A (en) Semiconductor rectifying element
JPS5367372A (en) Mos-type field effect transistor
JPS5492180A (en) Manufacture of semiconductor device
JPS5643757A (en) Gallium arsenic type integrated circuit