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JPS5758160A - Photoconductive member - Google Patents

Photoconductive member

Info

Publication number
JPS5758160A
JPS5758160A JP55134115A JP13411580A JPS5758160A JP S5758160 A JPS5758160 A JP S5758160A JP 55134115 A JP55134115 A JP 55134115A JP 13411580 A JP13411580 A JP 13411580A JP S5758160 A JPS5758160 A JP S5758160A
Authority
JP
Japan
Prior art keywords
layer
nonphotoconductive
base
photoconductive
photoconductive member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55134115A
Other languages
Japanese (ja)
Other versions
JPS649625B2 (en
Inventor
Isamu Shimizu
Shigeru Shirai
Hidekazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP55134115A priority Critical patent/JPS5758160A/en
Priority to US06/304,568 priority patent/US4394426A/en
Priority to AU75648/81A priority patent/AU554181B2/en
Priority to GB8128841A priority patent/GB2087643B/en
Priority to CA000386703A priority patent/CA1181628A/en
Priority to NL8104426A priority patent/NL192142C/en
Priority to FR8118123A priority patent/FR2490839B1/en
Priority to DE813152399A priority patent/DE3152399A1/en
Priority to PCT/JP1981/000256 priority patent/WO1982001261A1/en
Publication of JPS5758160A publication Critical patent/JPS5758160A/en
Publication of JPS649625B2 publication Critical patent/JPS649625B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To obtain a photoconductive member superior in photoconductivity, durability, etc., by providing an intermediate layer on a base by using a nonphotoconductive amorphous material which uses Si and N as base material and contains H, and then by forming a photoconductive layer by using amorphous silicon which contains H. CONSTITUTION:On a coneuctive base 101, a nonphotoconductive intermediate layer 102 is provided to 30-1,000Angstrom thickness by using an amorphous material[expressed by a-(SiXN1-X)Y:H1-Y where 0<X<1 and 0<Y<1]containing H. On the layer 102, a photoconductive layer 103 having doped elemetns required for a p, an n, or an i type amorphous silicon alyer containing H is formed. On the layer 103, an upper layer may be formed to 30-1,000Angstrom by using a nonphotoconductive amorphous material which uses Si as a base material and contains H or halogen, or an inorganic or organic insulating material. In addition, a surface coating layer forming a charge image formation surface is formed on the upper layer. Thus, a photoconductive member is obtained which is stable and superior in durability and electric and optical characteristics in any atmosphere.
JP55134115A 1980-09-25 1980-09-25 Photoconductive member Granted JPS5758160A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP55134115A JPS5758160A (en) 1980-09-25 1980-09-25 Photoconductive member
US06/304,568 US4394426A (en) 1980-09-25 1981-09-22 Photoconductive member with α-Si(N) barrier layer
AU75648/81A AU554181B2 (en) 1980-09-25 1981-09-24 Photoconductive device
GB8128841A GB2087643B (en) 1980-09-25 1981-09-24 Photoconductive member
CA000386703A CA1181628A (en) 1980-09-25 1981-09-25 Photoconductive member including non-photoconductive layer containing amorphous silicon matrix containing nitrogen
NL8104426A NL192142C (en) 1980-09-25 1981-09-25 Photoconductive organ.
FR8118123A FR2490839B1 (en) 1980-09-25 1981-09-25 PHOTOCONDUCTIVE ELEMENT
DE813152399A DE3152399A1 (en) 1980-09-25 1981-09-25 Photoconductive member
PCT/JP1981/000256 WO1982001261A1 (en) 1980-09-25 1981-09-25 Photoconductive member

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55134115A JPS5758160A (en) 1980-09-25 1980-09-25 Photoconductive member

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57077667A Division JPS5811949A (en) 1982-05-10 1982-05-10 Photoconductive member

Publications (2)

Publication Number Publication Date
JPS5758160A true JPS5758160A (en) 1982-04-07
JPS649625B2 JPS649625B2 (en) 1989-02-17

Family

ID=15120802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55134115A Granted JPS5758160A (en) 1980-09-25 1980-09-25 Photoconductive member

Country Status (1)

Country Link
JP (1) JPS5758160A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5824148A (en) * 1981-08-06 1983-02-14 Seiko Epson Corp Electrophotographic receptor
JPS5995541A (en) * 1982-11-25 1984-06-01 Tomoegawa Paper Co Ltd Electrophotographic photosensitive body and its production
EP0160369A2 (en) 1984-03-12 1985-11-06 Canon Kabushiki Kaisha Light receiving member
JPS60256151A (en) * 1984-05-31 1985-12-17 Fujitsu Ltd electrophotographic photoreceptor
EP0178915A2 (en) 1984-10-15 1986-04-23 Canon Kabushiki Kaisha Light-receiving member
EP0219353A2 (en) 1985-10-16 1987-04-22 Canon Kabushiki Kaisha Light receiving members
EP0220879A2 (en) 1985-10-17 1987-05-06 Canon Kabushiki Kaisha Light receiving members
EP0222568A2 (en) 1985-11-01 1987-05-20 Canon Kabushiki Kaisha Light receiving members
EP0223469A2 (en) 1985-11-02 1987-05-27 Canon Kabushiki Kaisha Light receiving members
JPH0572782A (en) * 1988-03-08 1993-03-26 Fujitsu Ltd Optical backside recording photoreceptor and image forming apparatus

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5824148A (en) * 1981-08-06 1983-02-14 Seiko Epson Corp Electrophotographic receptor
JPS5995541A (en) * 1982-11-25 1984-06-01 Tomoegawa Paper Co Ltd Electrophotographic photosensitive body and its production
EP0160369A2 (en) 1984-03-12 1985-11-06 Canon Kabushiki Kaisha Light receiving member
JPS60256151A (en) * 1984-05-31 1985-12-17 Fujitsu Ltd electrophotographic photoreceptor
EP0178915A2 (en) 1984-10-15 1986-04-23 Canon Kabushiki Kaisha Light-receiving member
EP0219353A2 (en) 1985-10-16 1987-04-22 Canon Kabushiki Kaisha Light receiving members
EP0220879A2 (en) 1985-10-17 1987-05-06 Canon Kabushiki Kaisha Light receiving members
EP0222568A2 (en) 1985-11-01 1987-05-20 Canon Kabushiki Kaisha Light receiving members
EP0223469A2 (en) 1985-11-02 1987-05-27 Canon Kabushiki Kaisha Light receiving members
JPH0572782A (en) * 1988-03-08 1993-03-26 Fujitsu Ltd Optical backside recording photoreceptor and image forming apparatus

Also Published As

Publication number Publication date
JPS649625B2 (en) 1989-02-17

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