JPH0564467B2 - - Google Patents
Info
- Publication number
- JPH0564467B2 JPH0564467B2 JP59184033A JP18403384A JPH0564467B2 JP H0564467 B2 JPH0564467 B2 JP H0564467B2 JP 59184033 A JP59184033 A JP 59184033A JP 18403384 A JP18403384 A JP 18403384A JP H0564467 B2 JPH0564467 B2 JP H0564467B2
- Authority
- JP
- Japan
- Prior art keywords
- component
- amount
- heat treatment
- manufacturing
- conversion device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000003491 array Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 10
- 239000012535 impurity Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000003321 atomic absorption spectrophotometry Methods 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、フアクシミリ等の各種OA機器に用
いられる原稿と１対１に対応する光センサアレイ
等の光電変換装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a photoelectric conversion device such as a photosensor array that corresponds one-to-one with a document used in various office automation equipment such as a facsimile machine.
従来例の構成とその問題点
第１図は、光電変換装置の光センサアレイ部の
要部斜視図である。Configuration of a conventional example and its problems FIG. 1 is a perspective view of a main part of a photosensor array section of a photoelectric conversion device.
従来、原稿と１対１に対応する光センサアレイ
を備えた画像情報入力装置いわゆる密着形イメー
ジセンサの絶縁基板として、コーニング社の7059
ガラス基板１を用いており、光導電素子２として
は不純物Cuを含んだCdS・Se蒸着膜をCdC12雰
囲気中、500〜600℃で熱処理したものを用いてい
る。不純物としてのCuは、CdS・Se中において
は深いアクセプター準位として作用し、CdS・Se
の光導電特性に大きな影響を与える。そのため、
製造工程においてCdS・Se中のCu量をコントロ
ールすることは必要不可欠のことである。 Conventionally, Corning Corporation's 7059
A glass substrate 1 is used, and the photoconductive element 2 is a CdS/Se vapor-deposited film containing impurity Cu, which is heat-treated at 500 to 600° C. in a CdC12 atmosphere. Cu as an impurity acts as a deep acceptor level in CdS/Se.
has a great influence on the photoconductive properties of Therefore,
It is essential to control the amount of Cu in CdS/Se during the manufacturing process.
なお、同図において３は共通電極、４は個別電
極である。 In addition, in the figure, 3 is a common electrode, and 4 is an individual electrode.
しかしながら、従来のCdS・Se：Cuの蒸着工
程において、CdS・Seの膜厚及び蒸着中のCu量
を制御して製造したとしても、第２図に示すよう
に100ルクス、10V印加のもとでの各光センサア
レイの平均の光電流値が30〜50μAと広範囲にわ
たつてばらついている。このばらつきの要因の１
つとして考えられることは、用いる絶縁基板中の
Cu量である。CdS・Se光センサの特性を決める
不純物としてのCuは、きわめて微量、具体的に
は0.01mol％程度で充分その働きをするため、た
とえば、基板中に含まれるCu量が多いと熱処理
工程時に基板からCdS・Se蒸着膜中にCuが拡散
し、蒸着工程だけでCu量が制御できずに特性ば
らつきの原因となる。 However, in the conventional CdS/Se:Cu evaporation process, even if the CdS/Se film thickness and the amount of Cu during evaporation are controlled, as shown in Figure 2, under 100 lux and 10V application. The average photocurrent value of each optical sensor array varies over a wide range from 30 to 50 μA. One of the causes of this variation
One possibility is that the insulating substrate used
It is the amount of Cu. Cu, which is an impurity that determines the characteristics of CdS/Se optical sensors, has a very small amount, specifically about 0.01 mol%, which is sufficient for its function. As a result, Cu diffuses into the CdS/Se deposited film, and the amount of Cu cannot be controlled during the deposition process alone, causing variations in characteristics.
以上のような特性ばらつきは、工程における歩
留り低下や、周辺回路に柔軟性を広く持たせる必
要が生じ不都合である。 The above-mentioned variations in characteristics are inconvenient because they reduce yield in the process and require peripheral circuits to have a wide range of flexibility.
発明の目的
本発明は、以上に述べような観点から、特性ば
らつきが少ない安定した品質を持つた光センサア
レイを実現する製造方法の提供を目的とする。OBJECTS OF THE INVENTION From the viewpoints described above, the present invention aims to provide a manufacturing method for realizing an optical sensor array having stable quality with little variation in characteristics.
発明の構成
上記目的達成のため本発明の光電変換装置の製
造方法は、Cuの含有量が0.001wt％以下のBaO−
Al2O3−B2O3−SiO2ガラス基板上に、Cdと族
の主成分とした島状の光電素子列を主走査方向に
形成する形成工程、形成工程後、光電素子列を
500℃以上600℃以下の温度範囲で熱処理する熱処
理工程、熱処理工程後、光電素子列の上に信号取
り出し用の電極を形成する工程を含む製造方法で
ある。Structure of the Invention In order to achieve the above object, the method for manufacturing a photoelectric conversion device of the present invention is a method for manufacturing a photoelectric conversion device of the present invention.
A formation process in which island-shaped photoelectric element arrays containing Cd and group members as main components are formed in the main scanning direction on an Al 2 O 3 -B 2 O 3 -SiO 2 glass substrate. After the formation process, the photoelectric element array is
This manufacturing method includes a heat treatment step of performing heat treatment in a temperature range of 500° C. or more and 600° C. or less, and a step of forming electrodes for signal extraction on the photoelectric element array after the heat treatment step.
実施例の説明
先に述べたように、光センサとしてCdS・Se光
導電素子を用いる場合、CdS・Se中に含まれる
Cu不純物量が大きくその特性に影響を与えるこ
とがわかつている。実際、製造工程における光セ
ンサアレイの光電流の平均値のヒスグラムは、第
２図のようであつたが、その際に使用したコーニ
ング社の7059ガラス基板の成分および基板中に不
純物として含まれるCu量を原子吸光光度法を用
いて分析・調査した結果、基板の主成分は
SiO248wt％、BaO25wt％、B2O315wt％、
Al2O3wt％であり、Cuの含有量は0.0008wt％〜
0.003wt％の範囲で各ロツトごとにばらついてい
ることがわかつた。このことは第２図に示したよ
うな光センサアレイの光電流の平均値のばらつき
の要因の１つであると推察される。Explanation of Examples As mentioned earlier, when using a CdS/Se photoconductive element as an optical sensor, the CdS/Se contains
It is known that the amount of Cu impurity greatly affects its properties. In fact, the histogram of the average value of the photocurrent of the optical sensor array during the manufacturing process was as shown in Figure 2. As a result of analyzing and investigating the amount using atomic absorption spectrophotometry, the main components of the substrate were
SiO2 48wt%, BaO25wt%, B2O3 15wt %,
Al 2 O 3 wt%, Cu content is 0.0008wt%~
It was found that each lot varied within a range of 0.003wt%. This is presumed to be one of the causes of the variation in the average value of photocurrent of the optical sensor array as shown in FIG.
そこで、コーニング社の7059基板に含まれる
Cu量が、0.003wt％のものと0.0008wt％のものと
を基板として、その上にCdS・Se光導電膜を形成
し、その過程における膜中のCu量を原子吸光光
度法を用いて評価した。第３図にその結果を示し
ている。 Therefore, it is included in Corning's 7059 board.
A CdS/Se photoconductive film was formed on substrates with a Cu content of 0.003wt% and 0.0008wt%, and the amount of Cu in the film was evaluated using atomic absorption spectrometry during the process. did. Figure 3 shows the results.
第３図のＡ、Ｂ、ＣはそれぞれCdS・Seの真空
蒸着によつて形成した直後の膜中のCu量、CdCl2
雰囲気中熱処理前のプレアニール直後の膜中の
Cu量、CdCl2雰囲気中熱処理直後の膜中のCu量
をプロツトしており、ａは、基板中Cu量0.003wt
％の場合、ｂは基板中Cu量0.0008wt％の場合で
ある。この実験より基板中Cu量が、0.003wt％の
ものについては、基板に含まれるCuが、CdS・
Se膜中に拡散していることが明らかになつた。 A, B, and C in Fig. 3 are the amount of Cu in the film immediately after being formed by vacuum evaporation of CdS/Se, and CdCl 2
In the film immediately after pre-annealing before heat treatment in an atmosphere
The amount of Cu in the film immediately after heat treatment in a CdCl 2 atmosphere is plotted, and a is the amount of Cu in the substrate, 0.003wt.
%, b is the case where the amount of Cu in the substrate is 0.0008wt%. From this experiment, when the amount of Cu in the substrate was 0.003wt%, the Cu contained in the substrate was
It became clear that Se was diffused into the film.
さらに、工程実験として、コーニング社の7059
ガラス基板のうち、Cuの含有量が0.001wt％程度
以下のものだけを用いて光センサアレイを製造し
たところ、その品質を示す代表的なパラメータで
ある各光センサアレイの光電流の平均値のヒスト
グラムは第４図のようになり、第２図に比べてそ
のばらつきが小さくなつていることが確認され
た。また、主成分の組成比がコーニング7059とは
異なるが、他のBaO−Al2O3−B2O3−SiO2系ガ
ラス基板の場合においても同様な結果が得られ
た。 Furthermore, as a process experiment, Corning's 7059
When optical sensor arrays were manufactured using only glass substrates with a Cu content of about 0.001wt% or less, the average value of photocurrent of each optical sensor array, which is a typical parameter that indicates the quality, was The histogram was as shown in FIG. 4, and it was confirmed that the variation was smaller than in FIG. 2. Furthermore, although the composition ratio of the main components was different from that of Corning 7059, similar results were obtained with other BaO-Al2O3-B2O3 - SiO2 glass substrates .
発明の効果
以上のように本発明はCuの含有量が0.001wt％
以下の絶縁性基板を用いるので、光センサアレイ
を構成する−族化合物光導電膜に添加する
Cu量の制御性を向上させ、特に低濃度のCu量に
特に有効であり、安定した品質の光電変換装置が
製造できる効果がある。Effects of the invention As described above, the present invention has a Cu content of 0.001wt%.
Since the following insulating substrate is used, it is added to the - group compound photoconductive film that constitutes the optical sensor array.
It improves the controllability of the amount of Cu, is particularly effective for low concentrations of Cu, and has the effect of making it possible to manufacture photoelectric conversion devices with stable quality.
第１図は光電変換装置の光センサアレイ部の要
部斜視図、第２図は従来工程における光センサア
レイの光電流の平均値のヒストグラム、第３図は
基板中Cu量と各工程における光導電膜中のCu量
の関係を示したグラフ、第４図は本発明による光
センサアレイの光電流の平均値のヒストグラムで
ある。
１……絶縁基板、２……光導電素子、３……共
通電極、４……個別電極。
Figure 1 is a perspective view of the main parts of the photosensor array section of a photoelectric conversion device, Figure 2 is a histogram of the average photocurrent of the photosensor array in the conventional process, and Figure 3 is the amount of Cu in the substrate and the amount of light in each process. FIG. 4, a graph showing the relationship between the amount of Cu in the conductive film, is a histogram of the average value of photocurrent of the optical sensor array according to the present invention. 1...Insulating substrate, 2...Photoconductive element, 3...Common electrode, 4...Individual electrode.
Claims (1)
−B2O3−SiO2ガラス基板上に、Cdと族化合物
をの主成分とした島状の光電素子列を主走査方向
に形成する形成工程、前記形成工程後、光電素子
列を500℃以上600℃以下の温度範囲で熱処理する
熱処理工程、前記熱処理工程後、前記光電素子列
の上に信号取り出し用の電極を形成する工程を含
むことを特徴とする光電変換装置の製造方法。 ２ ガラス基板の主成分が、SiO2成分48wt％、
BaO成分25wt％、B2O3成分15wt％およびAl2O3
成分11wt％であることを特徴とする特許請求の
範囲第１項記載の光電変換装置の製造方法。[Claims] 1 BaO-Al 2 O 3 with a Cu content of 0.001wt% or less
A formation step of forming island-shaped photoelectric element arrays containing Cd and group compounds as main components on a -B 2 O 3 -SiO 2 glass substrate in the main scanning direction; after the formation step, the photoelectric element arrays are heated at 500°C. A method for manufacturing a photoelectric conversion device, comprising a heat treatment step of performing heat treatment in a temperature range of 600° C. or less, and a step of forming a signal extraction electrode on the photoelectric element array after the heat treatment step. 2 The main component of the glass substrate is SiO2 component 48wt%,
BaO component 25wt%, B2O3 component 15wt% and Al2O3
2. The method for manufacturing a photoelectric conversion device according to claim 1, wherein the content of the component is 11 wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59184033A JPS6161459A (en) | 1984-09-03 | 1984-09-03 | Manufacturing method of photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59184033A JPS6161459A (en) | 1984-09-03 | 1984-09-03 | Manufacturing method of photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6161459A JPS6161459A (en) | 1986-03-29 |
| JPH0564467B2 true JPH0564467B2 (en) | 1993-09-14 |
Family
ID=16146181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59184033A Granted JPS6161459A (en) | 1984-09-03 | 1984-09-03 | Manufacturing method of photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6161459A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56167240A (en) * | 1980-05-29 | 1981-12-22 | Toshiba Corp | Photoelectric converter |
-
1984
- 1984-09-03 JP JP59184033A patent/JPS6161459A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56167240A (en) * | 1980-05-29 | 1981-12-22 | Toshiba Corp | Photoelectric converter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6161459A (en) | 1986-03-29 |
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