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JPS5610945A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5610945A
JPS5610945A JP8647579A JP8647579A JPS5610945A JP S5610945 A JPS5610945 A JP S5610945A JP 8647579 A JP8647579 A JP 8647579A JP 8647579 A JP8647579 A JP 8647579A JP S5610945 A JPS5610945 A JP S5610945A
Authority
JP
Japan
Prior art keywords
layer
film
electrode
gate electrode
extension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8647579A
Other languages
English (en)
Other versions
JPS621256B2 (ja
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8647579A priority Critical patent/JPS5610945A/ja
Publication of JPS5610945A publication Critical patent/JPS5610945A/ja
Publication of JPS621256B2 publication Critical patent/JPS621256B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]

Landscapes

  • Local Oxidation Of Silicon (AREA)
JP8647579A 1979-07-10 1979-07-10 Manufacture of semiconductor device Granted JPS5610945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8647579A JPS5610945A (en) 1979-07-10 1979-07-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8647579A JPS5610945A (en) 1979-07-10 1979-07-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5610945A true JPS5610945A (en) 1981-02-03
JPS621256B2 JPS621256B2 (ja) 1987-01-12

Family

ID=13887985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8647579A Granted JPS5610945A (en) 1979-07-10 1979-07-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5610945A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186915A (ja) * 2007-01-29 2008-08-14 Toshiba Corp 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186915A (ja) * 2007-01-29 2008-08-14 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPS621256B2 (ja) 1987-01-12

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