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JPS54117690A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS54117690A
JPS54117690A JP2480278A JP2480278A JPS54117690A JP S54117690 A JPS54117690 A JP S54117690A JP 2480278 A JP2480278 A JP 2480278A JP 2480278 A JP2480278 A JP 2480278A JP S54117690 A JPS54117690 A JP S54117690A
Authority
JP
Japan
Prior art keywords
layer
film
type
sio
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2480278A
Other languages
Japanese (ja)
Other versions
JPS6125226B2 (en
Inventor
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2480278A priority Critical patent/JPS54117690A/en
Publication of JPS54117690A publication Critical patent/JPS54117690A/en
Publication of JPS6125226B2 publication Critical patent/JPS6125226B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make a pattern minute to enhance dielectric strength and reduce a floating capacity and a gate resistance to make a device suitable for high frequency by causing an oxide film to self-align in diffusion and metal etching processes.
CONSTITUTION: N--type layer 2 is grown epitaxially on N+-type Si substrate 1 to be a drain region, and SiO2 film 31 is provided only on a gate forming region. Next, a Si layer is grown epitaxially again on all the surface, and single crystal Si layer 21 and poly-crystal Si layer 22 are formed on exposed substrate 1 and film 21 respectively. After that, the pattern of photo resistor film 8 is provided, and the boundary between layers 21 and 22 is converted to porous Si layer 7 reaching layer 2 by electrification in fluoric acid solution, and layer 7 is subjected to heat treatment in wet oxygen and is made of SiO2 layer 3. Next, a window is provided in SiO2 film 33 on layer 21 generated at this time, and P+-type gate region 4 and N+-type source region 5 are formed in layers 2 and 21 respectively through layer 22 by diffusion. After that, metal is caused to adhere to the surface and is etched selectively, and electrode wirings are provided on these regions.
COPYRIGHT: (C)1979,JPO&Japio
JP2480278A 1978-03-03 1978-03-03 Production of semiconductor device Granted JPS54117690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2480278A JPS54117690A (en) 1978-03-03 1978-03-03 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2480278A JPS54117690A (en) 1978-03-03 1978-03-03 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54117690A true JPS54117690A (en) 1979-09-12
JPS6125226B2 JPS6125226B2 (en) 1986-06-14

Family

ID=12148317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2480278A Granted JPS54117690A (en) 1978-03-03 1978-03-03 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54117690A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157058A (en) * 1980-04-14 1981-12-04 Thomson Csf Semiconductor device and method of manufacturing same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190905A (en) * 1987-01-31 1988-08-08 Hiroshi Sato Parallel driving type hydraulic motor device and vehicle driven by hydraulic motor
JPS63172725U (en) * 1987-04-30 1988-11-09

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157058A (en) * 1980-04-14 1981-12-04 Thomson Csf Semiconductor device and method of manufacturing same
JPH0126183B2 (en) * 1980-04-14 1989-05-22 Thomson Csf

Also Published As

Publication number Publication date
JPS6125226B2 (en) 1986-06-14

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