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JPS5562885A - Production of single crystal - Google Patents

Production of single crystal

Info

Publication number
JPS5562885A
JPS5562885A JP13692778A JP13692778A JPS5562885A JP S5562885 A JPS5562885 A JP S5562885A JP 13692778 A JP13692778 A JP 13692778A JP 13692778 A JP13692778 A JP 13692778A JP S5562885 A JPS5562885 A JP S5562885A
Authority
JP
Japan
Prior art keywords
rod
crystal
single crystal
pores
focus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13692778A
Other languages
Japanese (ja)
Other versions
JPS6213320B2 (en
Inventor
Akihiko Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13692778A priority Critical patent/JPS5562885A/en
Publication of JPS5562885A publication Critical patent/JPS5562885A/en
Publication of JPS6213320B2 publication Critical patent/JPS6213320B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a high quality large size single crystal by partially melting a sintered raw material rod and crystallizing the melt in an atmosphere based on He or H2 to substitute the He or H2 for air in the pores of the rod, thereby preventing formation of bubbles in the melting zone.
CONSTITUTION: Halogen lamp 2 is set at one focus of spheroidal mirror 1, and sintered raw material rod 3 at the other focus. Rod 3 and seed crystal 5 are held with upper and lower rotary shafts 4, 6, respectively, and they are sealed in transparent quartz tube 7. He or H2 is then introduced from gas inlet 9 and exhausted from exhaust port 10 to be substd. for air in the pores of rod 3. Infrared rays from lamp 2 are concentrated on the tip of rod 3 to form molten body 8, and by moving crystal 5 upward it is contacted to body 8. After an equilibrium state is attained, by moving shafts 4, 6 crystal 5 is grown to obtain a single crystal.
COPYRIGHT: (C)1980,JPO&Japio
JP13692778A 1978-11-07 1978-11-07 Production of single crystal Granted JPS5562885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13692778A JPS5562885A (en) 1978-11-07 1978-11-07 Production of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13692778A JPS5562885A (en) 1978-11-07 1978-11-07 Production of single crystal

Publications (2)

Publication Number Publication Date
JPS5562885A true JPS5562885A (en) 1980-05-12
JPS6213320B2 JPS6213320B2 (en) 1987-03-25

Family

ID=15186811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13692778A Granted JPS5562885A (en) 1978-11-07 1978-11-07 Production of single crystal

Country Status (1)

Country Link
JP (1) JPS5562885A (en)

Also Published As

Publication number Publication date
JPS6213320B2 (en) 1987-03-25

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