JPS5556092A - Production of single crystal - Google Patents
Production of single crystalInfo
- Publication number
- JPS5556092A JPS5556092A JP12706678A JP12706678A JPS5556092A JP S5556092 A JPS5556092 A JP S5556092A JP 12706678 A JP12706678 A JP 12706678A JP 12706678 A JP12706678 A JP 12706678A JP S5556092 A JPS5556092 A JP S5556092A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- rod
- infrared rays
- production
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To easily produce a high quality single crystal of a large diameter by vertically moving a raw material rod and/or a growing crystal while turning them in production of a single crystal by a floating zone method using infrared rays.
CONSTITUTION: In production of a single crystal by floating zone method by which infrared rays from a halogen lamp or a xenon lamp are concentrated with a spheriocal mirror to heat melt a raw material rod followed by crystallization, the rod and a growing crystal are usually turned in opposite directions, and motions for bringing them close to each other and detaching them are repeated periodically. By this method, when they are brought close to each other, a thick melting zone is formed, resulting in a single crystal of a large diameter. As they are detached, the zone becomes thin, and infrared rays reach the central part of the rod to well heat the rod.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12706678A JPS5556092A (en) | 1978-10-16 | 1978-10-16 | Production of single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12706678A JPS5556092A (en) | 1978-10-16 | 1978-10-16 | Production of single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5556092A true JPS5556092A (en) | 1980-04-24 |
Family
ID=14950733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12706678A Pending JPS5556092A (en) | 1978-10-16 | 1978-10-16 | Production of single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5556092A (en) |
-
1978
- 1978-10-16 JP JP12706678A patent/JPS5556092A/en active Pending
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