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JPS5556091A - Production of single crystal - Google Patents

Production of single crystal

Info

Publication number
JPS5556091A
JPS5556091A JP12706578A JP12706578A JPS5556091A JP S5556091 A JPS5556091 A JP S5556091A JP 12706578 A JP12706578 A JP 12706578A JP 12706578 A JP12706578 A JP 12706578A JP S5556091 A JPS5556091 A JP S5556091A
Authority
JP
Japan
Prior art keywords
crystal
single crystal
production
crack
high quality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12706578A
Other languages
Japanese (ja)
Inventor
Akihiko Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12706578A priority Critical patent/JPS5556091A/en
Publication of JPS5556091A publication Critical patent/JPS5556091A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a high quality single crystal with no crack by setting a cylindrical structure round a growing crystal in production of a single crystal by a floating zone method using infrared rays.
CONSTITUTION: In production of a single crystal by a floating zone method by which infrared rays from a halogen lamp or a xenon lamp are concentrated with a spheroidal mirror to heat melt raw material rod 8 followed by crystallization, cylindrical cover 11 is set round growing crystal 10, and crystal 10 is grown. Thus, crystal 10 is seldom deprived of heat owing to the convection of atmosphere gas in quartz tube 7, and a high quality single crystal with no crack can be obtd.
COPYRIGHT: (C)1980,JPO&Japio
JP12706578A 1978-10-16 1978-10-16 Production of single crystal Pending JPS5556091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12706578A JPS5556091A (en) 1978-10-16 1978-10-16 Production of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12706578A JPS5556091A (en) 1978-10-16 1978-10-16 Production of single crystal

Publications (1)

Publication Number Publication Date
JPS5556091A true JPS5556091A (en) 1980-04-24

Family

ID=14950710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12706578A Pending JPS5556091A (en) 1978-10-16 1978-10-16 Production of single crystal

Country Status (1)

Country Link
JP (1) JPS5556091A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ308846B6 (en) * 2019-05-31 2021-07-07 Univerzita Karlova A method of growing a homogeneous single crystal with a magnetic shape memory in a stationary state and the apparatus for doing this

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CZ308846B6 (en) * 2019-05-31 2021-07-07 Univerzita Karlova A method of growing a homogeneous single crystal with a magnetic shape memory in a stationary state and the apparatus for doing this

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