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JPS5590497A - Single crystal producing device - Google Patents

Single crystal producing device

Info

Publication number
JPS5590497A
JPS5590497A JP16376778A JP16376778A JPS5590497A JP S5590497 A JPS5590497 A JP S5590497A JP 16376778 A JP16376778 A JP 16376778A JP 16376778 A JP16376778 A JP 16376778A JP S5590497 A JPS5590497 A JP S5590497A
Authority
JP
Japan
Prior art keywords
rod
crystal
lamp
focus
high melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16376778A
Other languages
Japanese (ja)
Inventor
Akihiko Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16376778A priority Critical patent/JPS5590497A/en
Publication of JPS5590497A publication Critical patent/JPS5590497A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To facilitate a single crystal production of high melting point free from thermal strain, cracks, and bubbles by a method wherein the long axis of at least one infrared lamp is passed through one focus of a bi-spheroid mirror and is made parallel to a crystal rod, with the other lamp being placed perpendicular to the crystal rod.
CONSTITUTION: A silica tube 5 in which atmosphere and pressure are controllable is installed. In the tube 5, raw sintered rod 3 and seed crystal 4 are placed so that melted zone 2 is located at the center focus of a bi-spheroidal mirror. The long axis of a halogen lamp 7 is aligned to the line 6 which is parallel to the raw rod 3 and passes through one focus so as to heat the sintered rod 3 and the seed crystal 4. The other halogen lamp 7 is located perpendicular to the line connecting the sintered rod 3 and seed crystal 4, and located near melting zone 2 to specifically heat the melting zone 2. (For high melting material, a xenon lamp is used.) The process provides a large crystal without thermal strain, and cracks, and facilitates crystallization of high melting point material which is conventionally hard to crystallize.
COPYRIGHT: (C)1980,JPO&Japio
JP16376778A 1978-12-28 1978-12-28 Single crystal producing device Pending JPS5590497A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16376778A JPS5590497A (en) 1978-12-28 1978-12-28 Single crystal producing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16376778A JPS5590497A (en) 1978-12-28 1978-12-28 Single crystal producing device

Publications (1)

Publication Number Publication Date
JPS5590497A true JPS5590497A (en) 1980-07-09

Family

ID=15780318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16376778A Pending JPS5590497A (en) 1978-12-28 1978-12-28 Single crystal producing device

Country Status (1)

Country Link
JP (1) JPS5590497A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036059A (en) * 1973-07-13 1975-04-04
JPS511543A (en) * 1975-05-26 1976-01-08 Dainippon Ink & Chemicals HYOMENNIOTOTSUMOYOOJUSURUKESHOMENNOSAKUSEIHOHO
JPS5355164A (en) * 1976-10-29 1978-05-19 Seiko Epson Corp Electronic watch

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036059A (en) * 1973-07-13 1975-04-04
JPS511543A (en) * 1975-05-26 1976-01-08 Dainippon Ink & Chemicals HYOMENNIOTOTSUMOYOOJUSURUKESHOMENNOSAKUSEIHOHO
JPS5355164A (en) * 1976-10-29 1978-05-19 Seiko Epson Corp Electronic watch

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