JP5512731B2 - 2段のマイクロ波のe級電力増幅器 - Google Patents
2段のマイクロ波のe級電力増幅器 Download PDFInfo
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- JP5512731B2 JP5512731B2 JP2012087389A JP2012087389A JP5512731B2 JP 5512731 B2 JP5512731 B2 JP 5512731B2 JP 2012087389 A JP2012087389 A JP 2012087389A JP 2012087389 A JP2012087389 A JP 2012087389A JP 5512731 B2 JP5512731 B2 JP 5512731B2
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- 239000003990 capacitor Substances 0.000 claims description 29
- 230000001939 inductive effect Effects 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 16
- 230000005540 biological transmission Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 5
- 238000012938 design process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
- Transmitters (AREA)
Description
本発明を特定の応用の例示的な実施形態を参照にしてここで説明するが、本発明はそれに限定されないことを理解すべきである。当業者はその技術的範囲内および本発明が非常に有用である付加的な分野で付加的な変形、応用、実施形態を認識するであろう。
Claims (6)
- E級負荷をスイッチングモード回路(50)に提供するE級段間整合回路(40)において、
前記スイッチングモード回路(50)の出力に直列に結合された直列の誘導性−容量性ネットワーク(32、34)と、
前記スイッチングモード回路(50)の前記出力に結合された1以上の集中定数キャパシタ(42)と、
前記スイッチングモード回路(50)に並列に結合され、接地されているシャント誘導素子(14)と、
前記直列の誘導性−容量性ネットワーク(32、34)に結合され、所望の負荷のインピーダンスに整合させるために、前記E級段間整合回路(40)の出力インピーダンスを変換するインピーダンス変換器(44)と、を含み、
前記集中定数キャパシタ(42)は前記スイッチングモード回路(50)中の固有のキャパシタンスを補償することを特徴とするE級段間整合回路。 - 前記シャント誘導素子(14)は前記スイッチングモード回路(50)に対する誘導性バイアスラインを含んでいる請求項1記載のE級段間整合回路。
- 前記直列の誘導性−容量性ネットワーク(32、34)は前記スイッチングモード回路(50)の前記出力に結合されている誘導素子(32)を含んでいる請求項1記載のE級段間整合回路。
- 前記直列の誘導性−容量性ネットワーク(32、34)はさらに前記誘導素子(32)に直列結合されている容量素子(34)を含んでいる請求項3記載のE級段間整合回路。
- 前記E級段間整合回路(40)は広い周波数範囲にわたって高電力付加効率と高電力を同時に提供する請求項1記載のE級段間整合回路。
- 前記E級段間整合回路(40)は7−11GHzの範囲の周波数で動作可能である請求項1記載のE級段間整合回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/178,113 | 2005-07-06 | ||
US11/178,113 US7265619B2 (en) | 2005-07-06 | 2005-07-06 | Two stage microwave Class E power amplifier |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008519384A Division JP2008545336A (ja) | 2005-07-06 | 2006-06-20 | 2段のマイクロ波のe級電力増幅器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012165435A JP2012165435A (ja) | 2012-08-30 |
JP5512731B2 true JP5512731B2 (ja) | 2014-06-04 |
Family
ID=37110210
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008519384A Withdrawn JP2008545336A (ja) | 2005-07-06 | 2006-06-20 | 2段のマイクロ波のe級電力増幅器 |
JP2012087389A Expired - Fee Related JP5512731B2 (ja) | 2005-07-06 | 2012-04-06 | 2段のマイクロ波のe級電力増幅器 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008519384A Withdrawn JP2008545336A (ja) | 2005-07-06 | 2006-06-20 | 2段のマイクロ波のe級電力増幅器 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7265619B2 (ja) |
EP (1) | EP1911155B1 (ja) |
JP (2) | JP2008545336A (ja) |
KR (1) | KR101058994B1 (ja) |
AU (1) | AU2006269627B2 (ja) |
CA (1) | CA2595944C (ja) |
NO (1) | NO20080663L (ja) |
WO (1) | WO2007008349A1 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008193544A (ja) * | 2007-02-07 | 2008-08-21 | Fujitsu Ltd | 信号特性に応じて内部整合をとる増幅器 |
US8217299B2 (en) | 2007-02-22 | 2012-07-10 | Advanced Energy Industries, Inc. | Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch |
JP2009094805A (ja) * | 2007-10-09 | 2009-04-30 | Sumitomo Electric Ind Ltd | 増幅器 |
JP5040703B2 (ja) * | 2008-02-13 | 2012-10-03 | 住友電気工業株式会社 | 増幅器 |
US7944305B2 (en) * | 2008-07-28 | 2011-05-17 | Coherent, Inc. | RF pre-amplifiers and power amplifiers |
US8044594B2 (en) | 2008-07-31 | 2011-10-25 | Advanced Energy Industries, Inc. | Power supply ignition system and method |
US8395078B2 (en) | 2008-12-05 | 2013-03-12 | Advanced Energy Industries, Inc | Arc recovery with over-voltage protection for plasma-chamber power supplies |
PL2790205T3 (pl) | 2009-02-17 | 2018-10-31 | Solvix Gmbh | Urządzenie zasilające do obróbki plazmowej |
US8351480B2 (en) * | 2009-10-13 | 2013-01-08 | Coherent, Inc. | Digital pulse-width-modulation control of a radio frequency power supply for pulsed laser |
US8116346B2 (en) * | 2010-01-22 | 2012-02-14 | Coherent, Inc. | CO2 laser output power control during warm-up |
US8344801B2 (en) * | 2010-04-02 | 2013-01-01 | Mks Instruments, Inc. | Variable class characteristic amplifier |
JP5519404B2 (ja) | 2010-05-25 | 2014-06-11 | 国立大学法人豊橋技術科学大学 | スイッチング回路及び包絡線信号増幅器 |
JP5419812B2 (ja) * | 2010-06-30 | 2014-02-19 | 三菱電機株式会社 | 高周波多段能動回路 |
US8552665B2 (en) | 2010-08-20 | 2013-10-08 | Advanced Energy Industries, Inc. | Proactive arc management of a plasma load |
US8717102B2 (en) * | 2011-09-27 | 2014-05-06 | Infineon Technologies Ag | RF device with compensatory resonator matching topology |
JP6156148B2 (ja) * | 2011-11-17 | 2017-07-05 | 日本電気株式会社 | 逆f級増幅回路及び逆f級増幅回路の寄生回路補償方法 |
US9160289B2 (en) | 2013-05-10 | 2015-10-13 | Raytheon Company | Broadband power amplifier having high efficiency |
JP6036564B2 (ja) | 2013-06-14 | 2016-11-30 | 富士通株式会社 | 可変インダクタ回路及び高周波回路 |
GB2533767B (en) * | 2014-12-16 | 2019-06-19 | Leonardo Mw Ltd | Integrated circuits and methods of manufacturing. |
CN104917473B (zh) * | 2015-06-16 | 2018-10-23 | 华讯方舟科技有限公司 | 一种e类功率放大器的等效电感电路及器件参数获取方法 |
KR102282920B1 (ko) * | 2015-08-20 | 2021-07-29 | 한국전자통신연구원 | 증폭기 집적 회로 및 그 설계 방법 |
JP6581477B2 (ja) * | 2015-11-17 | 2019-09-25 | 株式会社東芝 | 増幅器 |
KR102316806B1 (ko) * | 2020-10-08 | 2021-10-25 | 한화시스템 주식회사 | 클래스-e 전력 증폭기 동작 장치 및 방법 |
CN113381701B (zh) * | 2021-06-30 | 2023-03-24 | 上海航天测控通信研究所 | 微波固态功率放大器 |
JPWO2023144891A1 (ja) * | 2022-01-25 | 2023-08-03 |
Family Cites Families (12)
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US3919656A (en) * | 1973-04-23 | 1975-11-11 | Nathan O Sokal | High-efficiency tuned switching power amplifier |
US5115355A (en) * | 1990-11-27 | 1992-05-19 | Thermo Electron Technologies Corp. | Compact coude optics system |
US5363235A (en) * | 1993-02-10 | 1994-11-08 | Hughes Aircraft Company | Dual field of view multi wavelength sensor |
US5535438A (en) * | 1994-05-10 | 1996-07-09 | Panasonic Technologies, Inc. | Phase linear class E amplifier for a satellite communication terminal which communicates with a low earth orbiting satellite |
US6232841B1 (en) * | 1999-07-01 | 2001-05-15 | Rockwell Science Center, Llc | Integrated tunable high efficiency power amplifier |
US7265618B1 (en) * | 2000-05-04 | 2007-09-04 | Matsushita Electric Industrial Co., Ltd. | RF power amplifier having high power-added efficiency |
AU2002213122A1 (en) * | 2000-10-10 | 2002-04-22 | California Institute Of Technology | Class e/f switching power amplifiers |
US6472934B1 (en) * | 2000-12-29 | 2002-10-29 | Ericsson Inc. | Triple class E Doherty amplifier topology for high efficiency signal transmitters |
JP2003243945A (ja) * | 2001-12-13 | 2003-08-29 | Hitachi Ltd | 高周波電力増幅器モジュール |
US6552610B1 (en) * | 2002-01-15 | 2003-04-22 | Mva.Com Eurotec, B.V. | Transmission-line tuned switching power amplifier |
US6879209B2 (en) * | 2003-07-08 | 2005-04-12 | Icefyre Semiconductor Corp. | Switched-mode power amplifier using lumped element impedance inverter for parallel combining |
JP4335633B2 (ja) * | 2003-10-03 | 2009-09-30 | 株式会社ナノテコ | F級増幅回路,及びf級増幅器用負荷回路 |
-
2005
- 2005-07-06 US US11/178,113 patent/US7265619B2/en active Active
-
2006
- 2006-06-20 AU AU2006269627A patent/AU2006269627B2/en not_active Ceased
- 2006-06-20 JP JP2008519384A patent/JP2008545336A/ja not_active Withdrawn
- 2006-06-20 CA CA2595944A patent/CA2595944C/en active Active
- 2006-06-20 KR KR1020087000326A patent/KR101058994B1/ko active IP Right Grant
- 2006-06-20 EP EP06785160.0A patent/EP1911155B1/en active Active
- 2006-06-20 WO PCT/US2006/023924 patent/WO2007008349A1/en active Application Filing
-
2008
- 2008-02-05 NO NO20080663A patent/NO20080663L/no not_active Application Discontinuation
-
2012
- 2012-04-06 JP JP2012087389A patent/JP5512731B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7265619B2 (en) | 2007-09-04 |
US20070008034A1 (en) | 2007-01-11 |
JP2012165435A (ja) | 2012-08-30 |
CA2595944C (en) | 2012-01-24 |
EP1911155B1 (en) | 2014-03-05 |
KR20080016727A (ko) | 2008-02-21 |
WO2007008349A1 (en) | 2007-01-18 |
NO20080663L (no) | 2008-02-05 |
EP1911155A1 (en) | 2008-04-16 |
AU2006269627A1 (en) | 2007-01-18 |
CA2595944A1 (en) | 2007-01-18 |
KR101058994B1 (ko) | 2011-08-23 |
JP2008545336A (ja) | 2008-12-11 |
AU2006269627B2 (en) | 2009-11-05 |
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