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NO20080663L - Totrinns mikrobolge klasse E effektforsterker - Google Patents

Totrinns mikrobolge klasse E effektforsterker

Info

Publication number
NO20080663L
NO20080663L NO20080663A NO20080663A NO20080663L NO 20080663 L NO20080663 L NO 20080663L NO 20080663 A NO20080663 A NO 20080663A NO 20080663 A NO20080663 A NO 20080663A NO 20080663 L NO20080663 L NO 20080663L
Authority
NO
Norway
Prior art keywords
circuit
switch mode
load
output
power amplifier
Prior art date
Application number
NO20080663A
Other languages
English (en)
Inventor
Reza Tayrani
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of NO20080663L publication Critical patent/NO20080663L/no

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191Tuned amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • H03F3/2176Class E amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/391Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
  • Transmitters (AREA)

Abstract

En lastkrets (40) for bruk med en svitsj emoduskrets (50). Den nye lastkretsen (40) inkluderer et serieinduktivt-kapasitivt nettverk (32,34) koblet til en utgang av svitsj emoduskretsen (50) og en krets (42) for å tilveiebringe en kapasitans koblet til utgangen av svitsj emoduskretsen (50). I en illustrerende utførelse inkluderer kretsen (42) for å tilveiebringe kapasitans, en eller flere konsentrerte kondensatorer tilpasset å kompensere for en indre kapasitans i svitsj emoduskretsen (50). Lastkretsen (40) kan også inkludere en parallell induktans koblet til utgangen av svitsjemoduskretsen. I en illustrerende utførelse er lastkretsen (40) tilpasset å tilveiebringe en klasse E last til en totrirm høyeffektforsterker (100). Forsterkeren (100) inkluderer et drivertrirm (102), et nytt klasse E mellomtrirm tilpasningsnettverk (ISMN) (104), og et høyeffekt trirm (106) som bruker den nye lastkretsen (40).
NO20080663A 2005-07-06 2008-02-05 Totrinns mikrobolge klasse E effektforsterker NO20080663L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/178,113 US7265619B2 (en) 2005-07-06 2005-07-06 Two stage microwave Class E power amplifier
PCT/US2006/023924 WO2007008349A1 (en) 2005-07-06 2006-06-20 Two stage microwave class e power amplifier

Publications (1)

Publication Number Publication Date
NO20080663L true NO20080663L (no) 2008-02-05

Family

ID=37110210

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20080663A NO20080663L (no) 2005-07-06 2008-02-05 Totrinns mikrobolge klasse E effektforsterker

Country Status (8)

Country Link
US (1) US7265619B2 (no)
EP (1) EP1911155B1 (no)
JP (2) JP2008545336A (no)
KR (1) KR101058994B1 (no)
AU (1) AU2006269627B2 (no)
CA (1) CA2595944C (no)
NO (1) NO20080663L (no)
WO (1) WO2007008349A1 (no)

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JP2008193544A (ja) * 2007-02-07 2008-08-21 Fujitsu Ltd 信号特性に応じて内部整合をとる増幅器
US8217299B2 (en) 2007-02-22 2012-07-10 Advanced Energy Industries, Inc. Arc recovery without over-voltage for plasma chamber power supplies using a shunt switch
JP2009094805A (ja) * 2007-10-09 2009-04-30 Sumitomo Electric Ind Ltd 増幅器
JP5040703B2 (ja) * 2008-02-13 2012-10-03 住友電気工業株式会社 増幅器
US7944305B2 (en) * 2008-07-28 2011-05-17 Coherent, Inc. RF pre-amplifiers and power amplifiers
US8044594B2 (en) 2008-07-31 2011-10-25 Advanced Energy Industries, Inc. Power supply ignition system and method
US8395078B2 (en) 2008-12-05 2013-03-12 Advanced Energy Industries, Inc Arc recovery with over-voltage protection for plasma-chamber power supplies
PL2790205T3 (pl) 2009-02-17 2018-10-31 Solvix Gmbh Urządzenie zasilające do obróbki plazmowej
US8351480B2 (en) * 2009-10-13 2013-01-08 Coherent, Inc. Digital pulse-width-modulation control of a radio frequency power supply for pulsed laser
US8116346B2 (en) * 2010-01-22 2012-02-14 Coherent, Inc. CO2 laser output power control during warm-up
US8344801B2 (en) * 2010-04-02 2013-01-01 Mks Instruments, Inc. Variable class characteristic amplifier
JP5519404B2 (ja) 2010-05-25 2014-06-11 国立大学法人豊橋技術科学大学 スイッチング回路及び包絡線信号増幅器
JP5419812B2 (ja) * 2010-06-30 2014-02-19 三菱電機株式会社 高周波多段能動回路
US8552665B2 (en) 2010-08-20 2013-10-08 Advanced Energy Industries, Inc. Proactive arc management of a plasma load
US8717102B2 (en) * 2011-09-27 2014-05-06 Infineon Technologies Ag RF device with compensatory resonator matching topology
JP6156148B2 (ja) * 2011-11-17 2017-07-05 日本電気株式会社 逆f級増幅回路及び逆f級増幅回路の寄生回路補償方法
US9160289B2 (en) 2013-05-10 2015-10-13 Raytheon Company Broadband power amplifier having high efficiency
JP6036564B2 (ja) 2013-06-14 2016-11-30 富士通株式会社 可変インダクタ回路及び高周波回路
GB2533767B (en) * 2014-12-16 2019-06-19 Leonardo Mw Ltd Integrated circuits and methods of manufacturing.
CN104917473B (zh) * 2015-06-16 2018-10-23 华讯方舟科技有限公司 一种e类功率放大器的等效电感电路及器件参数获取方法
KR102282920B1 (ko) * 2015-08-20 2021-07-29 한국전자통신연구원 증폭기 집적 회로 및 그 설계 방법
JP6581477B2 (ja) * 2015-11-17 2019-09-25 株式会社東芝 増幅器
KR102316806B1 (ko) * 2020-10-08 2021-10-25 한화시스템 주식회사 클래스-e 전력 증폭기 동작 장치 및 방법
CN113381701B (zh) * 2021-06-30 2023-03-24 上海航天测控通信研究所 微波固态功率放大器
JPWO2023144891A1 (no) * 2022-01-25 2023-08-03

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US3919656A (en) * 1973-04-23 1975-11-11 Nathan O Sokal High-efficiency tuned switching power amplifier
US5115355A (en) * 1990-11-27 1992-05-19 Thermo Electron Technologies Corp. Compact coude optics system
US5363235A (en) * 1993-02-10 1994-11-08 Hughes Aircraft Company Dual field of view multi wavelength sensor
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US7265618B1 (en) * 2000-05-04 2007-09-04 Matsushita Electric Industrial Co., Ltd. RF power amplifier having high power-added efficiency
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JP2003243945A (ja) * 2001-12-13 2003-08-29 Hitachi Ltd 高周波電力増幅器モジュール
US6552610B1 (en) * 2002-01-15 2003-04-22 Mva.Com Eurotec, B.V. Transmission-line tuned switching power amplifier
US6879209B2 (en) * 2003-07-08 2005-04-12 Icefyre Semiconductor Corp. Switched-mode power amplifier using lumped element impedance inverter for parallel combining
JP4335633B2 (ja) * 2003-10-03 2009-09-30 株式会社ナノテコ F級増幅回路,及びf級増幅器用負荷回路

Also Published As

Publication number Publication date
JP5512731B2 (ja) 2014-06-04
US7265619B2 (en) 2007-09-04
US20070008034A1 (en) 2007-01-11
JP2012165435A (ja) 2012-08-30
CA2595944C (en) 2012-01-24
EP1911155B1 (en) 2014-03-05
KR20080016727A (ko) 2008-02-21
WO2007008349A1 (en) 2007-01-18
EP1911155A1 (en) 2008-04-16
AU2006269627A1 (en) 2007-01-18
CA2595944A1 (en) 2007-01-18
KR101058994B1 (ko) 2011-08-23
JP2008545336A (ja) 2008-12-11
AU2006269627B2 (en) 2009-11-05

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