JP5006102B2 - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
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- JP5006102B2 JP5006102B2 JP2007132552A JP2007132552A JP5006102B2 JP 5006102 B2 JP5006102 B2 JP 5006102B2 JP 2007132552 A JP2007132552 A JP 2007132552A JP 2007132552 A JP2007132552 A JP 2007132552A JP 5006102 B2 JP5006102 B2 JP 5006102B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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Description
本発明に係る第1の実施形態の白色LED発光装置では、図1に示すように、蛍光体の励起光源であるLEDチップ3を搭載した基板20上をドーム状(たとえば半球状)に満たした透明樹脂層(透明樹脂部)4を有し、その透明樹脂層4の外側に蛍光体層5を持つ。半球状の透明樹脂層4の基板20との境界に近い部分にはその外側に蛍光体層5が存在しない環状の領域があり、この領域を覆うように反射層6が形成されている。LEDチップ3は金ワイヤボンディング7などによってリードフレーム22上の電極8,9に接続されている。
図5ないし図7に示すように、上記と同様の白色LED発光装置構造を、作成工程の順序を変えて行なうこともできる。すなわち、はじめに基板上にLEDチップ3を搭載し、その後、図5に示すように、液滴吐出装置10により、金属含有インク12を平面基板20上に環状に塗布することによって、反射層6を形成する。このとき、特に、超音波方式の液滴吐出装置10を用いて高粘度の金属含有インクを上向きに吐出しながら塗布することによって、基板20の垂直方向に厚みを持つ反射層6の立体構造を得ることが容易になる。
本発明の作成方法を、反射板を有するパッケージカップを用いた発光装置の作成に応用することもできる。その構造を図8に示す。この実施形態においては、平板基板の代わりに、窪み31が形成されたパッケージカップ30を用い、窪み31の底部32中央にLEDチップ3を設置する。そして、LEDチップ3の外側に半球状の透明樹脂層4と蛍光体層5を形成し、透明樹脂層4と窪み31の底部32の境界部付近に環状に反射層6を形成する。
本発明の第4の実施形態に係る発光装置は、図9に示すように、基板20上に配置された紫外LEDチップ3と、紫外LEDチップ3を覆うように配置されたドーム状(たとえば半球状)の透明樹脂層4と、その外側を覆う赤色蛍光体層13とを有する。この実施形態ではさらにこの赤色蛍光体層13の外側に、第2の透明樹脂層4a、緑色蛍光体層14、第3の透明樹脂層4b、青色蛍光体層15が順次形成されている。
Claims (8)
- 基板の上に発光チップを搭載する搭載ステップと、
前記基板の上で前記発光チップの外側を満たしてドーム状に覆う透明樹脂部および、蛍光体を含有して前記透明樹脂部の少なくとも頂部付近の外側に形成される蛍光体層を、液滴吐出装置を用いて形成するドーム形成ステップと、
前記ドーム状の透明樹脂部および蛍光体層の外側で前記基板に接する位置付近に反射層を形成する反射層形成ステップと、
を有し、前記ドーム形成ステップは、
前記基板の上および前記発光チップの外側に向けて透明樹脂の液滴を前記液滴吐出装置によって上向きに吐出させる透明樹脂吐出ステップと、
前記透明樹脂吐出ステップの後に蛍光体を含有する透明樹脂の液滴を前記液滴吐出装置によって上向きに吐出させる蛍光体含有樹脂吐出ステップと、
を含むこと、を特徴とする発光装置製造方法。 - 前記ドーム形成ステップは、
前記基板の上および前記発光チップの外側に向けて蛍光体を含有する透明樹脂の液滴を上向きに吐出させる蛍光体含有樹脂吐出ステップと、
前記蛍光体含有樹脂吐出ステップによって吐出された透明樹脂が硬化する前に当該透明樹脂中の前記蛍光体を前記ドームの表面近くに沈降させる沈降ステップと、
を含むこと、を特徴とする請求項1に記載の発光装置製造方法。 - 前記反射層形成ステップは、金属含有インクの液滴を液滴吐出装置によって吐出させるステップを含むこと、を特徴とする請求項1または請求項2に記載の発光装置製造方法。
- 前記反射層形成ステップは、前記金属含有インクの液滴を上向きに吐出させるステップを含むこと、を特徴とする請求項3に記載の発光装置製造方法。
- 前記反射層形成ステップは、前記ドーム形成ステップの前に行なうこと、を特徴とする請求項1ないし請求項4のいずれか一項に記載の発光装置製造方法。
- 前記反射層形成ステップは、前記ドーム形成ステップの後に行なうこと、を特徴とする請求項1ないし請求項4のいずれか一項に記載の発光装置製造方法。
- 前記液滴吐出装置は、集束超音波を用いた音圧によって液滴を吐出するものであること、を特徴とする請求項1ないし請求項6のいずれか一項に記載の発光装置製造方法。
- 前記ドーム形成ステップよりも前に前記基板の前記チップを搭載する面に撥水処理を行なう撥水処理ステップをさらに有すること、を特徴とする請求項1ないし請求項7のいずれか一項に記載の発光装置製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007132552A JP5006102B2 (ja) | 2007-05-18 | 2007-05-18 | 発光装置およびその製造方法 |
US12/122,472 US7839087B2 (en) | 2007-05-18 | 2008-05-16 | Light emitting device and method of manufacturing the same |
EP08156366A EP1993151A3 (en) | 2007-05-18 | 2008-05-16 | Light emitting device and method of manufacturing the same |
CN200810099493.3A CN101308898B (zh) | 2007-05-18 | 2008-05-16 | 发光装置及其制造方法 |
US12/923,949 US8419497B2 (en) | 2007-05-18 | 2010-10-15 | Light emitting device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007132552A JP5006102B2 (ja) | 2007-05-18 | 2007-05-18 | 発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008288409A JP2008288409A (ja) | 2008-11-27 |
JP5006102B2 true JP5006102B2 (ja) | 2012-08-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007132552A Expired - Fee Related JP5006102B2 (ja) | 2007-05-18 | 2007-05-18 | 発光装置およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7839087B2 (ja) |
EP (1) | EP1993151A3 (ja) |
JP (1) | JP5006102B2 (ja) |
CN (1) | CN101308898B (ja) |
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CN101308898B (zh) | 2010-06-09 |
US20090021140A1 (en) | 2009-01-22 |
EP1993151A2 (en) | 2008-11-19 |
US7839087B2 (en) | 2010-11-23 |
US20110039359A1 (en) | 2011-02-17 |
US8419497B2 (en) | 2013-04-16 |
EP1993151A3 (en) | 2010-04-07 |
JP2008288409A (ja) | 2008-11-27 |
CN101308898A (zh) | 2008-11-19 |
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