JP4665959B2 - 真空パッケージ - Google Patents
真空パッケージ Download PDFInfo
- Publication number
- JP4665959B2 JP4665959B2 JP2007310694A JP2007310694A JP4665959B2 JP 4665959 B2 JP4665959 B2 JP 4665959B2 JP 2007310694 A JP2007310694 A JP 2007310694A JP 2007310694 A JP2007310694 A JP 2007310694A JP 4665959 B2 JP4665959 B2 JP 4665959B2
- Authority
- JP
- Japan
- Prior art keywords
- hole
- chamber
- tapered surface
- surface side
- vacuum package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003566 sealing material Substances 0.000 claims description 108
- 239000000758 substrate Substances 0.000 claims description 77
- 230000005540 biological transmission Effects 0.000 claims description 59
- 125000006850 spacer group Chemical group 0.000 claims description 39
- 238000007872 degassing Methods 0.000 claims description 15
- 238000007789 sealing Methods 0.000 description 53
- 239000000463 material Substances 0.000 description 45
- 229910000679 solder Inorganic materials 0.000 description 31
- 238000000034 method Methods 0.000 description 28
- 238000005530 etching Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 13
- 238000002844 melting Methods 0.000 description 13
- 230000008018 melting Effects 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910007637 SnAg Inorganic materials 0.000 description 2
- 229910008433 SnCU Inorganic materials 0.000 description 2
- 229910007116 SnPb Inorganic materials 0.000 description 2
- 229910005728 SnZn Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Inorganic materials [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Inorganic materials [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0145—Hermetically sealing an opening in the lid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Cp=182×(D4/L)×p (l/s)
Ck=12.1×(D3/L) (l/s)
λ(mm)≒5×10−2/p
実施例1と同じチップ厚0.8mmの赤外線透過窓に対して、一方の面側のみから異方性エッチングを行い、図27〜図29に示すような一方向のテーパ面のみを有する貫通孔を形成した。貫通孔の平面形状は実施例1と同様に正方形であり、貫通孔の大きさは、最も狭い開口面積(一方の表面における開口面積)が0.16mm、開口面積が0.0256mm2とした。すなわち、貫通孔の最小開口面積が、実施例1に係る貫通孔における貫通孔の最小開口面積と同じになるようにした。また、貫通孔を形成する一方の角部(図27〜図29に示す角度δ)は54.7°となった。その結果、比較例1において、実施例1と同じ最小開口面積を有する貫通孔を形成すると、開口面積が最大となる開口は、一辺1.293mm、開口面積1.672mm2となった。
比較例1と同様にして、最大開口面積が実施例1に係る貫通孔の最大開口面積と同一となる貫通孔を形成しようとしたが、同様のチップ厚(0.8mm)及びテーパ角(54.7°)では物理的に貫通孔を形成することはできなかった。
1,201,301,401,501 機能素子(赤外線受光素子)
2,202,302,402,502 接合材
3,203,303,403,503 受光素子基板
4,204,304,404,504 電極パッド
5,205,305,405,505 ボンディングワイヤ
6,206,306,406,506 チャンバ
7,207,307,407,507 絶縁層
8a,8b,208a,208b,308a,308b,408a,408b,508a,508b, パッド
9,209,309,409,509 スペーサ
10a,10b,210a,210b,310a,310b,410a,410b,510a,510b 接合材料
11a,11b,211a,211b,311a,311b,411a,411b,511a,511b, 反射防止膜
12,22,32,42,52,62,72,212,312,412,512 赤外線透過窓
12a,22a,32a,42a,52a,62a,72a,203a,309a,409a,512a 外面
12b,22b,32b,42b,52b,62b,72b,203b,309b,409b,512b 第1テーパ面
12c,22c,32c,42c,52c,62c,72c,203c,309c,409c,512c 第2テーパ面
12d,22d,32d,42d,52d,62d,72d,203d,309d,409d,512d 内面
52e,72e 内周面
13,23,33,43,53,63,73,2,3,4,5 貫通孔
13a,23a,33a,43a,53a,63a,73a,2,3,4,5 くびれ部
14,24,34,44,54,64,74,213,313,413,513 パッド
15,25,35,45,55,65,75,215,315,415,515 封止材料
16,216,316,416,516 電極パッド
17,217,317,417,517 絶縁層
18 ゲッタ
19 レジスト
81 真空チャンバ
82 ステージ
83 透過窓
84 レーザ装置
901 基板
902 受光部
903 空隙
904 赤外線透過窓
905 ハンダ
906 メタライズ層
907 配線
908 酸化シリコン保護膜
909 パッド
910 反射防止膜
911 貫通穴
912 封止材料(真空封止用ハンダ)
913 真空封止用メタライズ層
921 素子
922 素子形成基板体
923 蓋部基板体
924 キャビティ
925 空間
926 穴部
927 スルーホール
928 電極パターン
929 連通孔
930a 小径開口部
930b 小径開口部上端縁
931 封止部材
932 くびれ部分
933 封止接合強化膜
941,951 部材
941a 第1開口
941b 第2開口
942,952 封止材料用パッド
943,953 貫通孔
944,954 封止材料
954a 突出した封止材料
945,955 角部
Claims (10)
- 大気圧より減圧されたチャンバ内に封止される機能素子と、
前記チャンバの少なくとも一部を形成する部材と、を備える真空パッケージであって、
前記部材は、前記チャンバ内を脱気するための貫通孔を少なくとも1つ有し、
前記貫通孔に沿った前記部材に垂直な断面において、前記貫通孔を形成する前記部材の角部は鈍角であり、
前記貫通孔は封止材料で封止されており、
前記貫通孔の内壁は、前記チャンバの外面側から内面側に向けて前記貫通孔の開口面積を縮小する第1テーパ面と、前記チャンバの内面側から外面側に向けて前記貫通孔の開口面積を縮小する第2テーパ面と、を有し、
前記第1テーパ面は、前記第2テーパ面よりも前記チャンバの外面側に形成されており、
前記第2テーパ面部分における前記貫通孔の深さは、前記第1テーパ面部分における前記貫通孔の深さ以上であることを特徴とする真空パッケージ。 - 大気圧より減圧されたチャンバ内に封止される機能素子と、
前記チャンバの少なくとも一部を形成する部材と、を備える真空パッケージであって、
前記部材は、前記チャンバ内を脱気するための貫通孔を少なくとも1つ有し、
前記貫通孔に沿った前記部材に垂直な断面において、前記貫通孔を形成する前記部材の角部は鈍角であり、
前記貫通孔は封止材料で封止されており、
前記貫通孔の内壁は、前記チャンバの外面側から内面側に向けて前記貫通孔の開口面積を縮小する第1テーパ面と、前記チャンバの内面側から外面側に向けて前記貫通孔の開口面積を縮小する第2テーパ面と、を有し、
前記第1テーパ面は、前記第2テーパ面よりも前記チャンバの外面側に形成されており、
前記貫通孔を通る断面において、前記第1テーパ面部分における前記貫通孔の中心線と前記第2テーパ面部分における前記貫通孔の中心線とは一致していないことを特徴とする真空パッケージ。 - 大気圧より減圧されたチャンバ内に封止される機能素子と、
前記チャンバの少なくとも一部を形成する部材と、を備える真空パッケージであって、
前記部材は、前記チャンバ内を脱気するための貫通孔を少なくとも1つ有し、
前記貫通孔に沿った前記部材に垂直な断面において、前記貫通孔を形成する前記部材の角部は鈍角であり、
前記貫通孔は封止材料で封止されており、
前記貫通孔の内壁は、前記チャンバの外面側から内面側に向けて前記貫通孔の開口面積を縮小する第1テーパ面と、前記チャンバの内面側から外面側に向けて前記貫通孔の開口面積を縮小する第2テーパ面と、を有し、
前記第1テーパ面は、前記第2テーパ面よりも前記チャンバの外面側に形成されており、
前記貫通孔を通る断面において、前記第1テーパ面の一方のテーパ角度と他方のテーパ角度は異なっており、前記第2テーパ面の一方のテーパ角度と他方のテーパ角度は異なっていることを特徴とする真空パッケージ。 - 前記第1テーパ面と前記第2テーパ面とは連続して形成されていることを特徴とする請求項1〜3のいずれか一項に記載の真空パッケージ。
- 大気圧より減圧されたチャンバ内に封止される機能素子と、
前記チャンバの少なくとも一部を形成する部材と、を備える真空パッケージであって、
前記部材は、前記チャンバ内を脱気するための貫通孔を少なくとも1つ有し、
前記貫通孔に沿った前記部材に垂直な断面において、前記貫通孔を形成する前記部材の角部は鈍角であり、
前記貫通孔は封止材料で封止されており、
前記貫通孔の内壁は、前記チャンバの外面側から内面側に向けて前記貫通孔の開口面積を縮小する第1テーパ面と、前記チャンバの内面側から外面側に向けて前記貫通孔の開口面積を縮小する第2テーパ面と、を有し、
前記第1テーパ面は、前記第2テーパ面よりも前記チャンバの外面側に形成されており、
前記第1テーパ面と前記第2テーパ面とは連続していないことを特徴とする真空パッケージ。 - 大気圧より減圧されたチャンバ内に封止される機能素子と、
前記チャンバの少なくとも一部を形成する部材と、を備える真空パッケージであって、
前記部材は、前記チャンバ内を脱気するための貫通孔を少なくとも1つ有し、
前記貫通孔に沿った前記部材に垂直な断面において、前記貫通孔を形成する前記部材の角部は鈍角であり、
前記貫通孔は封止材料で封止されており、
前記貫通孔の内壁は、前記チャンバの外面側から内面側に向けて前記貫通孔の開口面積を縮小する第1テーパ面と、前記チャンバの内面側から外面側に向けて前記貫通孔の開口面積を縮小する第2テーパ面と、を有し、
前記第1テーパ面は、前記第2テーパ面よりも前記チャンバの外面側に形成されており、
前記第1テーパ面と前記第2テーパ面とは連続しておらず、
前記貫通孔を通る断面において、前記第1テーパ面の一方のテーパ角度と他方のテーパ角度は異なっており、前記第2テーパ面の一方のテーパ角度と他方のテーパ角度は異なっていることを特徴とする真空パッケージ。 - 前記貫通孔の平面形状は、円形、楕円形、十字形、又は多角形であることを特徴とする請求項1〜6のいずれか一項に記載の真空パッケージ。
- 前記封止材料に対して前記部材よりも濡れ性の高いパッドが、前記貫通孔の内壁のうち前記第1テーパ面上に形成されていることを特徴とする請求項1〜7のいずれか一項に記載の真空パッケージ。
- 前記封止材料は、前記貫通孔から前記チャンバ内部へは突出していないことを特徴とする請求項1〜8のいずれか一項に記載の真空パッケージ。
- 前記機能素子は赤外線受光素子であり、
前記チャンバは、少なくとも、前記赤外線受光素子を搭載する受光素子基板と、前記チャンバ外方からの赤外線を前記赤外線受光素子が受光できるように赤外線を透過する赤外線透過窓と、前記受光素子基板と前記赤外線透過窓との間に所定の間隙を形成するスペーサと、で形成され、
前記貫通孔を形成する前記部材は、前記受光素子基板、前記赤外線透過窓及び前記スペーサのうちの少なくとも1つであることを特徴とする請求項1〜9のいずれか一項に記載の真空パッケージ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007310694A JP4665959B2 (ja) | 2007-11-30 | 2007-11-30 | 真空パッケージ |
US12/324,424 US7795585B2 (en) | 2007-11-30 | 2008-11-26 | Vacuum package and manufacturing process thereof |
EP20080020649 EP2065930A1 (en) | 2007-11-30 | 2008-11-27 | Semiconductor device vacuum package and manufacturing process thereof |
CN200810178837XA CN101447464B (zh) | 2007-11-30 | 2008-12-01 | 真空包装及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007310694A JP4665959B2 (ja) | 2007-11-30 | 2007-11-30 | 真空パッケージ |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010263446A Division JP2011035436A (ja) | 2010-11-26 | 2010-11-26 | 真空パッケージの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009135296A JP2009135296A (ja) | 2009-06-18 |
JP4665959B2 true JP4665959B2 (ja) | 2011-04-06 |
Family
ID=40430046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007310694A Expired - Fee Related JP4665959B2 (ja) | 2007-11-30 | 2007-11-30 | 真空パッケージ |
Country Status (4)
Country | Link |
---|---|
US (1) | US7795585B2 (ja) |
EP (1) | EP2065930A1 (ja) |
JP (1) | JP4665959B2 (ja) |
CN (1) | CN101447464B (ja) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5343969B2 (ja) * | 2008-07-25 | 2013-11-13 | 日本電気株式会社 | 封止パッケージ、プリント回路基板、電子機器及び封止パッケージの製造方法 |
JPWO2010095367A1 (ja) * | 2009-02-19 | 2012-08-23 | 日本電気株式会社 | 真空封止パッケージ、真空封止パッケージを有するプリント回路基板、電子機器、及び真空封止パッケージの製造方法 |
EP2264765A1 (en) * | 2009-06-19 | 2010-12-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Housing for an infrared radiation micro device and method for fabricating such housing |
JP5310309B2 (ja) * | 2009-06-26 | 2013-10-09 | 千住金属工業株式会社 | はんだコートリッド |
US8471206B1 (en) * | 2009-07-14 | 2013-06-25 | Flir Systems, Inc. | Infrared detector vacuum test systems and methods |
JP2011027643A (ja) * | 2009-07-28 | 2011-02-10 | Panasonic Electric Works Co Ltd | 赤外線センサ |
JP5523046B2 (ja) * | 2009-10-06 | 2014-06-18 | 三菱電機株式会社 | 光学装置 |
JP2011082458A (ja) * | 2009-10-09 | 2011-04-21 | Olympus Corp | 撮像ユニットの実装構造および製造方法 |
JP5847385B2 (ja) * | 2010-08-31 | 2016-01-20 | ミツミ電機株式会社 | 圧力センサ装置及び該装置を備える電子機器、並びに該装置の実装方法 |
US8809784B2 (en) | 2010-10-21 | 2014-08-19 | Raytheon Company | Incident radiation detector packaging |
FR2971083B1 (fr) * | 2011-02-02 | 2014-04-25 | Ulis | Procede d'assemblage et de fermeture hermetique d'un boitier d'encapsulation |
JP2013069858A (ja) * | 2011-09-22 | 2013-04-18 | Seiko Epson Corp | 電子デバイスおよびその製造方法、並びに、電子機器 |
US9038463B2 (en) | 2011-09-22 | 2015-05-26 | Seiko Epson Corporation | Electronic device, manufacturing method thereof, and electronic apparatus |
JP5982972B2 (ja) * | 2012-04-10 | 2016-08-31 | 日本電気株式会社 | 真空パッケージ、センサ、および真空パッケージの製造方法 |
JP5982973B2 (ja) * | 2012-04-10 | 2016-08-31 | 日本電気株式会社 | 真空パッケージ、真空パッケージの製造方法およびセンサ |
JP2014048109A (ja) * | 2012-08-30 | 2014-03-17 | Ricoh Co Ltd | 遠赤外線検出装置及びその製造方法 |
US10677656B2 (en) | 2012-12-31 | 2020-06-09 | Flir Systems, Inc. | Devices and methods for infrared reference pixels |
US9606016B2 (en) * | 2012-12-31 | 2017-03-28 | Flir Systems, Inc. | Devices and methods for determining vacuum pressure levels |
JP6279857B2 (ja) * | 2013-08-29 | 2018-02-14 | 京セラ株式会社 | 電子装置、多数個取り枠体および多数個取り電子装置 |
WO2015082951A1 (en) * | 2013-12-06 | 2015-06-11 | Commissariat à l'énergie atomique et aux énergies alternatives | Method of hermetically sealing a hole with a fuse material |
JP6439272B2 (ja) * | 2014-04-23 | 2018-12-19 | セイコーエプソン株式会社 | パッケージ、電子デバイス、電子デバイスの製造方法、電子機器、および移動体 |
JP2015029145A (ja) * | 2014-10-14 | 2015-02-12 | オリンパス株式会社 | 撮像ユニットの実装構造および製造方法 |
US20160273968A1 (en) * | 2015-03-16 | 2016-09-22 | Vlad Joseph Novotny | Sealed Infrared Imagers and Sensors |
US9567208B1 (en) | 2015-11-06 | 2017-02-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and method for fabricating the same |
DE102015224483A1 (de) * | 2015-12-08 | 2017-06-08 | Robert Bosch Gmbh | Gezielte Steuerung des Absorptionsverhaltens beim Laserwiederverschluss |
KR101832148B1 (ko) * | 2016-01-27 | 2018-02-26 | (주)파트론 | 밀봉 패키지의 실장 구조 및 실장 방법 |
JP6348534B2 (ja) * | 2016-04-21 | 2018-06-27 | 田中貴金属工業株式会社 | 貫通孔の封止構造及び封止方法、並びに、貫通孔を封止するための転写基板 |
JP6296254B2 (ja) * | 2016-06-29 | 2018-03-20 | セイコーエプソン株式会社 | 電子デバイスおよびその製造方法、並びに、電子機器 |
TWI610403B (zh) * | 2017-03-03 | 2018-01-01 | 矽品精密工業股份有限公司 | 基板結構及其製法與電子封裝件 |
JP2019062111A (ja) * | 2017-09-27 | 2019-04-18 | 日本航空電子工業株式会社 | パッケージ封止構造及びデバイス用パッケージ |
JP6565995B2 (ja) * | 2017-09-29 | 2019-08-28 | セイコーエプソン株式会社 | 電子デバイスおよび電子機器 |
DE102017125140B4 (de) * | 2017-10-26 | 2021-06-10 | Infineon Technologies Ag | Verfahren zum Herstellen eines hermetisch abgedichteten Gehäuses mit einem Halbleiterbauteil |
JP7112866B2 (ja) * | 2018-03-28 | 2022-08-04 | セイコーインスツル株式会社 | 赤外線センサ及び赤外線センサの製造方法 |
US20200194328A1 (en) * | 2018-12-12 | 2020-06-18 | Advanced Semiconductor Engineering, Inc. | Device packages and method of manufacturing the same |
US11365117B2 (en) | 2019-12-23 | 2022-06-21 | Industrial Technology Research Institute | MEMS device and manufacturing method of the same |
US11939212B2 (en) | 2019-12-23 | 2024-03-26 | Industrial Technology Research Institute | MEMS device, manufacturing method of the same, and integrated MEMS module using the same |
CN115015876A (zh) * | 2021-03-05 | 2022-09-06 | 上海禾赛科技有限公司 | 扫描振镜的扭力结构、扫描振镜及其制作方法 |
US11807520B2 (en) * | 2021-06-23 | 2023-11-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method for manufacturing thereof |
FR3125876A1 (fr) * | 2021-07-30 | 2023-02-03 | Lynred | Micro-bolometre aveugle d’imagerie infrarouge et procedes de realisation associes |
US20240019457A1 (en) * | 2022-07-13 | 2024-01-18 | Robert Bosch Gmbh | Inertial measurement device with vent hole structure |
US20240259661A1 (en) * | 2023-01-31 | 2024-08-01 | Asmpt Singapore Pte. Ltd. | Camera module assembly |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5232269A (en) * | 1975-09-05 | 1977-03-11 | Matsushita Electric Ind Co Ltd | Hermetic sealing method of semiconductor devices |
JP2003086722A (ja) * | 2001-09-14 | 2003-03-20 | Hitachi Ltd | 樹脂封止型パワーモジュール装置 |
JP2004289238A (ja) * | 2003-03-19 | 2004-10-14 | Seiko Epson Corp | 圧電デバイス用パッケージと圧電デバイスおよびこれらの製造方法ならびに圧電デバイスを利用した携帯電話装置および圧電デバイスを利用した電子機器 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5914488A (en) * | 1996-03-05 | 1999-06-22 | Mitsubishi Denki Kabushiki Kaisha | Infrared detector |
JPH11326037A (ja) | 1998-05-12 | 1999-11-26 | Mitsubishi Electric Corp | 赤外線検出器用真空パッケージ及びその製造方法 |
JPH11340348A (ja) | 1998-05-25 | 1999-12-10 | Murata Mfg Co Ltd | 素子の封止パッケージ構造およびその製造方法 |
JPH11351876A (ja) | 1998-06-09 | 1999-12-24 | Mitsubishi Electric Corp | 角速度センサ及びその製造方法 |
FR2822541B1 (fr) * | 2001-03-21 | 2003-10-03 | Commissariat Energie Atomique | Procedes et dispositifs de fabrication de detecteurs de rayonnement |
JP3972360B2 (ja) | 2003-03-04 | 2007-09-05 | セイコーエプソン株式会社 | 圧電デバイス用パッケージとその製造方法、及びこのパッケージを利用した圧電デバイス、並びにこの圧電デバイスを利用した電子機器 |
US20050082654A1 (en) * | 2003-09-26 | 2005-04-21 | Tessera, Inc. | Structure and self-locating method of making capped chips |
EP1775766A4 (en) | 2004-08-06 | 2010-06-09 | Almt Corp | COLLECTIVE SUBSTRATE, MOUNTING MEMBER FOR A SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, ILLUMINATING DEVICE, ILLUMINATED DIODE COMPONENT AND LED LUMINAIRE |
US7204737B2 (en) | 2004-09-23 | 2007-04-17 | Temic Automotive Of North America, Inc. | Hermetically sealed microdevice with getter shield |
CN100411183C (zh) * | 2005-04-18 | 2008-08-13 | 友力微系统制造股份有限公司 | 红外线图像传感器及其真空封装方法 |
WO2006129354A1 (ja) | 2005-06-01 | 2006-12-07 | Matsushita Electric Industrial Co., Ltd. | 回路基板とその製造方法及びこれを用いた電子部品 |
JP4883688B2 (ja) | 2006-09-29 | 2012-02-22 | セイコーインスツル株式会社 | 真空パッケージ及び電子デバイス並びに真空パッケージの製造方法 |
-
2007
- 2007-11-30 JP JP2007310694A patent/JP4665959B2/ja not_active Expired - Fee Related
-
2008
- 2008-11-26 US US12/324,424 patent/US7795585B2/en not_active Expired - Fee Related
- 2008-11-27 EP EP20080020649 patent/EP2065930A1/en not_active Withdrawn
- 2008-12-01 CN CN200810178837XA patent/CN101447464B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5232269A (en) * | 1975-09-05 | 1977-03-11 | Matsushita Electric Ind Co Ltd | Hermetic sealing method of semiconductor devices |
JP2003086722A (ja) * | 2001-09-14 | 2003-03-20 | Hitachi Ltd | 樹脂封止型パワーモジュール装置 |
JP2004289238A (ja) * | 2003-03-19 | 2004-10-14 | Seiko Epson Corp | 圧電デバイス用パッケージと圧電デバイスおよびこれらの製造方法ならびに圧電デバイスを利用した携帯電話装置および圧電デバイスを利用した電子機器 |
Also Published As
Publication number | Publication date |
---|---|
CN101447464B (zh) | 2012-09-19 |
US20090140146A1 (en) | 2009-06-04 |
EP2065930A1 (en) | 2009-06-03 |
US7795585B2 (en) | 2010-09-14 |
JP2009135296A (ja) | 2009-06-18 |
CN101447464A (zh) | 2009-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4665959B2 (ja) | 真空パッケージ | |
JP5343969B2 (ja) | 封止パッケージ、プリント回路基板、電子機器及び封止パッケージの製造方法 | |
US6686653B2 (en) | Miniature microdevice package and process for making thereof | |
US7077969B2 (en) | Miniature microdevice package and process for making thereof | |
US7154173B2 (en) | Semiconductor device and manufacturing method of the same | |
WO2010095367A1 (ja) | 真空封止パッケージ、真空封止パッケージを有するプリント回路基板、電子機器、及び真空封止パッケージの製造方法 | |
CN100552393C (zh) | 红外线传感器及其制造方法 | |
JP4475976B2 (ja) | 気密封止パッケージ | |
JP2000298063A (ja) | 赤外線検出器 | |
CN112758883B (zh) | Mems传感器及其制作方法 | |
JP2014082452A (ja) | 気密封止パッケージ及びその製造方法 | |
JP2011035436A (ja) | 真空パッケージの製造方法 | |
JP4816050B2 (ja) | センサーパッケージおよびその製造方法 | |
JP2001174323A (ja) | 赤外線検出装置 | |
JP2001174324A (ja) | 赤外線検出器および赤外線検出装置 | |
CN109292727A (zh) | 一种具有温度补偿功能的两片式mems陀螺仪 | |
KR101529543B1 (ko) | 멤즈 소자의 진공 패키징 방법 | |
JP2010243365A (ja) | 赤外線センサ装置の製造方法 | |
JPH10132654A (ja) | 検出素子用容器及びその製造方法 | |
JPH09229765A (ja) | 赤外線検出器 | |
JP4816049B2 (ja) | センサーパッケージおよびその製造方法 | |
JP2013254916A (ja) | 電子部品およびその製造方法 | |
CA2410430C (en) | Miniature microdevice package and process for making thereof | |
JP2013008720A (ja) | 電子デバイスの製造方法 | |
CN116598365A (zh) | 真空封装结构及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090415 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091007 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101005 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101126 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101227 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140121 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |