JP4538474B2 - インバータ装置 - Google Patents
インバータ装置 Download PDFInfo
- Publication number
- JP4538474B2 JP4538474B2 JP2007203754A JP2007203754A JP4538474B2 JP 4538474 B2 JP4538474 B2 JP 4538474B2 JP 2007203754 A JP2007203754 A JP 2007203754A JP 2007203754 A JP2007203754 A JP 2007203754A JP 4538474 B2 JP4538474 B2 JP 4538474B2
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- JP
- Japan
- Prior art keywords
- capacitor
- electrode side
- positive
- electrically connected
- negative electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Inverter Devices (AREA)
Description
Claims (4)
- インバータケースと、
前記インバータケース内に設けられたモジュールベースと、
前記モジュールベースに固定されている樹脂製のモジュールケースと、
前記モジュールベースに絶縁材を介して固定された複数の半導体素子と、
前記複数の半導体素子の駆動を制御する制御部と、
前記半導体素子に電気的に接続された正極および負極の入力側リードフレームと、
前記半導体素子に電気的に接続された三相の出力側導電性部材と、
平滑用コンデンサとを有し、
前記平滑用コンデンサは、前記正極および負極の入力側リードフレームと電気的に接続される正極および負極の平板状の導体と、前記正極および負極の前記平板状の導体と電気的に接続されると共に前記平板状の導体の平らな面に固定されたコンデンサ素子とを有し、
前記コンデンサ素子はフィルム系コンデンサであり、
前記正極および負極の平板状の導体は前記コンデンサ素子の固定部分からコンデンサ端子として伸びて前記正極および負極の入力側リードフレームと電気的に接続され、さらに前記コンデンサ端子として伸びる部分は絶縁部材を介したラミネート構造を成していることを特徴とするインバータ装置。 - 請求項1に記載のインバータ装置において、
前記正極および負極のコンデンサ端子はそれぞれ複数の接続部を有していると共に、
前記複数の接続部を介して、対応する前記正極および負極の入力側リードフレームに接続されていることを特徴とするインバータ装置。 - 請求項2に記載のインバータ装置において、
前記複数の接続部は貫通孔であり、
前記複数のコンデンサ端子はそれぞれ、前記貫通孔に挿通されたボルトによって、対応する前記入力側リードフレームに接続されていることを特徴とするインバータ装置。 - 請求項1に記載のインバータ装置において、
前記入力側リードフレームに電気的に接続されたフィルタコンデンサを有しており、
前記フィルタコンデンサは、前記モジュールベース上に設けられて前記モジュールベースに電気的に接続されていることを特徴とするインバータ装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007203754A JP4538474B2 (ja) | 2007-08-06 | 2007-08-06 | インバータ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007203754A JP4538474B2 (ja) | 2007-08-06 | 2007-08-06 | インバータ装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003127641A Division JP4055643B2 (ja) | 2003-05-06 | 2003-05-06 | インバータ装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008004953A JP2008004953A (ja) | 2008-01-10 |
JP2008004953A5 JP2008004953A5 (ja) | 2008-02-21 |
JP4538474B2 true JP4538474B2 (ja) | 2010-09-08 |
Family
ID=39009032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007203754A Expired - Fee Related JP4538474B2 (ja) | 2007-08-06 | 2007-08-06 | インバータ装置 |
Country Status (1)
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JP (1) | JP4538474B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5292823B2 (ja) * | 2008-01-22 | 2013-09-18 | 日産自動車株式会社 | 電力変換装置 |
JP5352113B2 (ja) * | 2008-04-22 | 2013-11-27 | トヨタ自動車株式会社 | インバータモジュール |
JP5184218B2 (ja) * | 2008-06-02 | 2013-04-17 | 本田技研工業株式会社 | コンデンサ搭載型インバータユニット |
DE102009017621B3 (de) * | 2009-04-16 | 2010-08-19 | Semikron Elektronik Gmbh & Co. Kg | Vorrichtung zur Verringerung der Störabstrahlung in einem leistungselektronischen System |
JP5289348B2 (ja) | 2010-01-22 | 2013-09-11 | 三菱電機株式会社 | 車載用電力変換装置 |
JP5652370B2 (ja) * | 2011-03-30 | 2015-01-14 | 株式会社デンソー | 電力変換装置 |
EP3185292B1 (en) | 2014-08-22 | 2021-04-21 | Mitsubishi Electric Corporation | Power conversion device |
US10790758B2 (en) * | 2018-03-08 | 2020-09-29 | Chongqing Jinkang New Energy Vehicle Co., Ltd. | Power converter for electric vehicle drive systems |
JP7279847B2 (ja) * | 2020-03-05 | 2023-05-23 | 富士電機株式会社 | 電力変換装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60171754A (ja) * | 1984-02-17 | 1985-09-05 | Sumitomo Electric Ind Ltd | 回路素子付半導体チツプキヤリア |
JPH01108751A (ja) * | 1987-10-21 | 1989-04-26 | Nec Corp | 集積回路装置 |
JPH1189248A (ja) * | 1997-09-02 | 1999-03-30 | Denso Corp | 電力制御装置 |
WO2002017400A1 (fr) * | 2000-08-18 | 2002-02-28 | Mitsubishi Denki Kabushiki Kaisha | Module d'alimentation |
JP2003110090A (ja) * | 2001-07-09 | 2003-04-11 | Daikin Ind Ltd | パワーモジュールおよび空気調和機 |
-
2007
- 2007-08-06 JP JP2007203754A patent/JP4538474B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60171754A (ja) * | 1984-02-17 | 1985-09-05 | Sumitomo Electric Ind Ltd | 回路素子付半導体チツプキヤリア |
JPH01108751A (ja) * | 1987-10-21 | 1989-04-26 | Nec Corp | 集積回路装置 |
JPH1189248A (ja) * | 1997-09-02 | 1999-03-30 | Denso Corp | 電力制御装置 |
WO2002017400A1 (fr) * | 2000-08-18 | 2002-02-28 | Mitsubishi Denki Kabushiki Kaisha | Module d'alimentation |
JP2003110090A (ja) * | 2001-07-09 | 2003-04-11 | Daikin Ind Ltd | パワーモジュールおよび空気調和機 |
Also Published As
Publication number | Publication date |
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JP2008004953A (ja) | 2008-01-10 |
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