JP4445519B2 - 熱処理炉及びその製造方法 - Google Patents
熱処理炉及びその製造方法 Download PDFInfo
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- JP4445519B2 JP4445519B2 JP2007146733A JP2007146733A JP4445519B2 JP 4445519 B2 JP4445519 B2 JP 4445519B2 JP 2007146733 A JP2007146733 A JP 2007146733A JP 2007146733 A JP2007146733 A JP 2007146733A JP 4445519 B2 JP4445519 B2 JP 4445519B2
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- 238000010438 heat treatment Methods 0.000 title claims description 219
- 238000004519 manufacturing process Methods 0.000 title description 15
- 239000011810 insulating material Substances 0.000 claims description 111
- 239000000463 material Substances 0.000 claims description 24
- 230000008602 contraction Effects 0.000 claims description 15
- 239000000725 suspension Substances 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000012784 inorganic fiber Substances 0.000 claims description 4
- 239000011295 pitch Substances 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 10
- 238000001816 cooling Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000012809 cooling fluid Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D1/00—Casings; Linings; Walls; Roofs
- F27D1/0003—Linings or walls
- F27D1/0036—Linings or walls comprising means for supporting electric resistances in the furnace
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49083—Heater type
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Furnace Details (AREA)
- Resistance Heating (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
Description
上記抵抗発熱体の外周に上記端子板及び支持体の支持片を避けて濾過材を配置し、該濾過材上に上記抵抗発熱体の軸方向に沿って細径の棒材を周方向に適宜間隔で配置する工程と、
上記抵抗発熱体を断熱材料をなす無機質繊維を含む懸濁液中に浸漬させて抵抗発熱体の内側からの吸引により上記濾過材上に上記断熱材料を堆積させる工程と、
上記濾過材上に堆積した断熱材料を乾燥させ断熱材を形成する工程と、乾燥後に上記断熱材と上記濾過材との間から上記棒材を抜き取り、更に上記断熱材と上記抵抗発熱体との間から上記濾過材を抜き取る工程と、
上記治具を上記支持体から除去する工程と、を含むことを特徴とする。
2 熱処理炉
3 処理容器
4 断熱材
5 抵抗発熱体
13 支持体
14 端子板
17 基部
18 支持片
32 治具
38 濾過材
39 棒材
40 懸濁液
51 管状部材
55 線状部材
56 支柱
57 円環部材
Claims (3)
- 被処理体を収容して熱処理するための処理容器を囲繞する筒状の断熱材と、該断熱材の内周面に沿って配置される螺旋状の抵抗発熱体と、上記断熱材の内周面に軸方向に沿って設けられ抵抗発熱体を所定ピッチで支持する支持体と、上記抵抗発熱体の外側に軸方向に適宜間隔で配置され断熱材を径方向に貫通して外部に延出された複数の端子板とを備えた熱処理炉において、上記支持体は抵抗発熱体の内側に位置する基部と、該基部から抵抗発熱体のピッチ間を通って炉の半径方向外方へ延出する複数の支持片とを有するように櫛状に形成され、該支持片の抵抗発熱体が接する上面部が抵抗発熱体の熱膨張収縮移動時の摩擦抵抗を低減するべく曲面状に形成されていることを特徴とする熱処理炉。
- 上記支持体の各支持片は、断面方形に形成され、上記抵抗発熱体が螺旋状に傾斜した状態で接する支持片の上面部の角部が曲面状に形成されていることを特徴とする請求項1記載の熱処理炉。
- 被処理体を収容して熱処理するための処理容器を囲繞する筒状の断熱材と、該断熱材の内周面に沿って配置される螺旋状の抵抗発熱体と、断熱材の内周面に軸方向に設けられ抵抗発熱体を所定ピッチで支持する支持体とを備えた熱処理炉の製造方法であって、外側の軸方向に沿って配置された複数の端子板を有する螺旋状の抵抗発熱体と、該抵抗発熱体の内側に位置する基部に抵抗発熱体のピッチ間を通って炉の半径方向外方へ延出する複数の支持片を有し、該支持片の抵抗発熱体が接する上面部が抵抗発熱体の熱膨張収縮移動時の摩擦抵抗を低減するべく曲面状に形成されている櫛状の支持体と、該支持体を抵抗発熱体の周方向で所定位置に位置決めして軸方向に整列させる治具と、を準備し、該治具を回転させながら治具上に上記支持体を介して上記抵抗発熱体を装着する工程と、
上記抵抗発熱体の外周に上記端子板及び支持体の支持片を避けて濾過材を配置し、該濾過材上に上記抵抗発熱体の軸方向に沿って細径の棒材を周方向に適宜間隔で配置する工程と、
上記抵抗発熱体を断熱材料をなす無機質繊維を含む懸濁液中に浸漬させて抵抗発熱体の内側からの吸引により上記濾過材上に上記断熱材料を堆積させる工程と、
上記濾過材上に堆積した断熱材料を乾燥させ断熱材を形成する工程と、乾燥後に上記断熱材と上記濾過材との間から上記棒材を抜き取り、更に上記断熱材と上記抵抗発熱体との間から上記濾過材を抜き取る工程と、
上記治具を上記支持体から除去する工程と、を含むことを特徴とする熱処理炉の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007146733A JP4445519B2 (ja) | 2007-06-01 | 2007-06-01 | 熱処理炉及びその製造方法 |
TW097119395A TWI451497B (zh) | 2007-06-01 | 2008-05-26 | 熱處理爐及製造其之方法 |
US12/155,095 US8134100B2 (en) | 2007-06-01 | 2008-05-29 | Heat processing furnace and method of manufacturing the same |
KR1020080050531A KR101148330B1 (ko) | 2007-06-01 | 2008-05-30 | 열처리로 및 그 제조 방법 |
CN200810109373.7A CN101315878B (zh) | 2007-06-01 | 2008-06-02 | 热处理炉及其制造方法 |
Applications Claiming Priority (1)
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JP2007146733A JP4445519B2 (ja) | 2007-06-01 | 2007-06-01 | 熱処理炉及びその製造方法 |
Related Child Applications (1)
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JP2009162781A Division JP5134595B2 (ja) | 2009-07-09 | 2009-07-09 | 熱処理炉 |
Publications (2)
Publication Number | Publication Date |
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JP2008300722A JP2008300722A (ja) | 2008-12-11 |
JP4445519B2 true JP4445519B2 (ja) | 2010-04-07 |
Family
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JP2007146733A Active JP4445519B2 (ja) | 2007-06-01 | 2007-06-01 | 熱処理炉及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8134100B2 (ja) |
JP (1) | JP4445519B2 (ja) |
KR (1) | KR101148330B1 (ja) |
CN (1) | CN101315878B (ja) |
TW (1) | TWI451497B (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
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US8023806B2 (en) * | 2007-03-20 | 2011-09-20 | Tokyo Electron Limited | Heat processing furnace and vertical-type heat processing apparatus |
JP5096182B2 (ja) * | 2008-01-31 | 2012-12-12 | 東京エレクトロン株式会社 | 熱処理炉 |
KR101096602B1 (ko) * | 2009-07-21 | 2011-12-20 | 가부시키가이샤 히다치 고쿠사이 덴키 | 가열 장치, 기판 처리 장치 및 반도체 장치의 제조 방법 |
JP5544121B2 (ja) * | 2009-07-21 | 2014-07-09 | 株式会社日立国際電気 | 加熱装置、基板処理装置、及び半導体装置の製造方法 |
US8785825B2 (en) * | 2010-06-25 | 2014-07-22 | Sandvik Thermal Process, Inc. | Support structure for heating element coil |
JP5721219B2 (ja) * | 2010-07-09 | 2015-05-20 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び加熱装置 |
JP5565188B2 (ja) * | 2010-08-10 | 2014-08-06 | 東京エレクトロン株式会社 | ヒータ装置 |
AT12463U1 (de) | 2010-09-27 | 2012-05-15 | Plansee Se | Heizleiteranordnung |
TWM413957U (en) * | 2010-10-27 | 2011-10-11 | Tangteck Equipment Inc | Diffusion furnace apparatus |
JP2013002728A (ja) * | 2011-06-16 | 2013-01-07 | Ihi Corp | 熱処理炉とそのヒータ交換方法 |
JP5868619B2 (ja) * | 2011-06-21 | 2016-02-24 | ニチアス株式会社 | 熱処理炉及び熱処理装置 |
US9171746B2 (en) | 2011-09-06 | 2015-10-27 | Arsalan Emami | Heater elements with enhanced cooling |
JP2014082014A (ja) * | 2012-10-12 | 2014-05-08 | Tokyo Electron Ltd | ヒータ装置及び熱処理装置 |
JP5993272B2 (ja) | 2012-10-18 | 2016-09-14 | 東京エレクトロン株式会社 | 断熱壁体の製造方法 |
US20140166640A1 (en) * | 2012-12-13 | 2014-06-19 | Sandvik Thermal Process Inc | Support for resisting radial creep of a heating element coil |
US9638466B2 (en) * | 2012-12-28 | 2017-05-02 | Jonathan Y. MELLEN | Furnace system with active cooling system and method |
JP2014186833A (ja) | 2013-03-22 | 2014-10-02 | Tokyo Electron Ltd | ヒータ装置及び熱処理装置 |
JP6170847B2 (ja) * | 2013-03-25 | 2017-07-26 | 株式会社日立国際電気 | 断熱構造体、加熱装置、基板処理装置および半導体装置の製造方法 |
CN104253064A (zh) * | 2013-06-28 | 2014-12-31 | 上海华虹宏力半导体制造有限公司 | 一种半导体熔炉加热器固定装置 |
TWI505864B (zh) * | 2013-12-05 | 2015-11-01 | Metal Ind Res & Dev Ct | 熱處理設備之收料裝置 |
CN103779258B (zh) * | 2014-02-20 | 2016-06-15 | 北京七星华创电子股份有限公司 | 一种半导体热处理设备的加热装置、维修件及维修方法 |
KR101712512B1 (ko) * | 2014-12-11 | 2017-03-22 | 김종섭 | 열처리용 전기로 |
US10798781B2 (en) * | 2015-05-13 | 2020-10-06 | Arsalan Emami | Horizontal modular heater |
KR102466140B1 (ko) * | 2016-01-29 | 2022-11-11 | 삼성전자주식회사 | 가열 장치 및 이를 갖는 기판 처리 시스템 |
WO2017156503A1 (en) | 2016-03-10 | 2017-09-14 | Arsalan Emami | Improved industrial heater |
US10889894B2 (en) * | 2018-08-06 | 2021-01-12 | Applied Materials, Inc. | Faceplate with embedded heater |
JP7016306B2 (ja) | 2018-08-23 | 2022-02-04 | Dowaサーモテック株式会社 | 熱処理装置 |
RU204240U1 (ru) * | 2020-08-03 | 2021-05-17 | Федеральное государственное бюджетное учреждение науки Институт проблем химической физики Российской Академии наук (ФГБУН ИПХФ РАН) | Устройство для синтеза полупроводниковых пленок |
CN116007390A (zh) * | 2022-12-15 | 2023-04-25 | 湖南优热科技有限责任公司 | 一种带有快速主动冷却系统的石墨化炉 |
CN119289657B (zh) * | 2024-12-10 | 2025-02-25 | 宝鸡禾盛金属有限公司 | 一种真空炉加热带吊挂装置 |
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JPH07253276A (ja) * | 1994-03-16 | 1995-10-03 | Tokyo Electron Ltd | 熱処理炉及びその製造方法 |
US5506389A (en) * | 1993-11-10 | 1996-04-09 | Tokyo Electron Kabushiki Kaisha | Thermal processing furnace and fabrication method thereof |
JPH10233277A (ja) | 1997-02-18 | 1998-09-02 | Tokyo Electron Ltd | 熱処理装置 |
JP2006080058A (ja) * | 2004-08-09 | 2006-03-23 | Teitokusha Kk | 電気ヒーター |
TWI315080B (en) | 2005-08-24 | 2009-09-21 | Hitachi Int Electric Inc | Baseplate processing equipment, heating device used on the baseplate processing equipment and method for manufacturing semiconductors with those apparatus, and heating element supporting structure |
JP4907937B2 (ja) | 2005-09-26 | 2012-04-04 | 株式会社日立国際電気 | 断熱壁体、発熱体の保持構造体、加熱装置および基板処理装置 |
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2007
- 2007-06-01 JP JP2007146733A patent/JP4445519B2/ja active Active
-
2008
- 2008-05-26 TW TW097119395A patent/TWI451497B/zh active
- 2008-05-29 US US12/155,095 patent/US8134100B2/en active Active
- 2008-05-30 KR KR1020080050531A patent/KR101148330B1/ko active IP Right Grant
- 2008-06-02 CN CN200810109373.7A patent/CN101315878B/zh active Active
Also Published As
Publication number | Publication date |
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CN101315878A (zh) | 2008-12-03 |
US8134100B2 (en) | 2012-03-13 |
JP2008300722A (ja) | 2008-12-11 |
KR101148330B1 (ko) | 2012-05-21 |
CN101315878B (zh) | 2011-04-06 |
KR20080106073A (ko) | 2008-12-04 |
US20080296282A1 (en) | 2008-12-04 |
TW200903650A (en) | 2009-01-16 |
TWI451497B (zh) | 2014-09-01 |
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