JP4377877B2 - 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット - Google Patents
光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット Download PDFInfo
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- 229910001316 Ag alloy Inorganic materials 0.000 claims description 154
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- 229910052779 Neodymium Inorganic materials 0.000 claims description 16
- 229910052718 tin Inorganic materials 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 14
- 229910052727 yttrium Inorganic materials 0.000 claims description 14
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 229910052758 niobium Inorganic materials 0.000 claims description 13
- 229910052726 zirconium Inorganic materials 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
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- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/26—Layered products comprising a layer of synthetic resin characterised by the use of special additives using curing agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
- B32B27/365—Layered products comprising a layer of synthetic resin comprising polyesters comprising polycarbonates
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- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
Description
純Agスパッタリングターゲット上に、各種添加元素単体のチップを配置した複合ターゲットを用いてDCマグネトロンスパッタ法により、直径12cmの円盤状のポリカーボネイト基板上にAg合金薄膜を作製した。このとき、成膜条件は、基板温度:22℃,Arガス圧:2mTorr,成膜速度:5nm/sec,背圧:< 5×10-6 Torr である。また、Ag合金の膜厚は40nmとした。
Ag合金薄膜の反射率は、波長405nm における値を日本分光製V-570 分光光度計を用い、ポリカーボネイト基板側から測定した。耐久性は、温度80℃,湿度90%RHで100h保持した後の反射率〔耐久性試験後の反射率(a)〕、及び、初期反射率すなわち成膜後反射率(b)と前記耐久性試験後の反射率(a)との差(a−b)で評価した。
例1においては、Ag合金薄膜としてAg-Nd-(Ti,Ta,W,Mo,V,Zr,Nb,Cr)薄膜を作製し、反射率、耐久性、マーク形状の評価を行った。この結果を表1に示す。
例2では、 Ag-(Nd,Gd,Y,Sm)- (Ti,Ta)薄膜を作製し、反射率、耐久性、マーク形状の評価を行った。この結果を表2に示す。
例3では、Ag-Nd-(Ti,Ta,W)-(Sn, In)薄膜を作製し、反射率、耐久性、マーク形状の評価を行った。この結果を表3に示す。
4--全反射膜層(Ag合金)、5--UV硬化樹脂保護層。
Claims (9)
- 光情報記録媒体用Ag合金反射膜であって、Agを主成分とし、Nd,Gd,Y,Smの1種以上を合計で 0.1〜3.0 原子%(0.1 原子%を除く)含有すると共に、W,Mo,V,Zr,Nb,Crの1種以上を合計で 3.0〜10.0原子%含有することを特徴とする光情報記録媒体用Ag合金反射膜。
- 光情報記録媒体用Ag合金反射膜であって、Agを主成分とし、Nd,Gd,Y,Smの1種以上を合計で 0.1〜3.0 原子%(0.1 原子%を除く)含有すると共に、Ti,Taの1種以上を合計で 5.0〜10.0原子%含有することを特徴とする光情報記録媒体用Ag合金反射膜。
- Sn,Inの1種以上を合計で 1.0〜5.0 原子%含有している請求項1または2記載の光情報記録媒体用Ag合金反射膜。
- 膜厚が10〜50nmである請求項1〜3のいずれかに記載の光情報記録媒体用Ag合金反射膜。
- レーザーマーキング用である請求項1〜4のいずれかに記載の光情報記録媒体用Ag合金反射膜。
- 請求項1〜5のいずれかに記載のAg合金反射膜を有していることを特徴とする光情報記録媒体。
- Agを主成分とし、Nd,Gd,Y,Smの1種以上を合計で 0.1〜3.0 原子%(0.1 原子%を除く)含有すると共に、W,Mo,V,Zr,Nb,Crの1種以上を合計で 3.0〜10.0原子%含有することを特徴とする光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット。
- Agを主成分とし、Nd,Gd,Y,Smの1種以上を合計で 0.1〜3.0 原子%(0.1 原子%を除く)含有すると共に、Ti,Taの1種以上を合計で 5.0〜10.0原子%含有することを特徴とする光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット。
- Sn,Inの1種以上を合計で 1.0〜5.0 原子%含有している請求項7または8記載の光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005368130A JP4377877B2 (ja) | 2005-12-21 | 2005-12-21 | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
US11/612,791 US7790263B2 (en) | 2005-12-21 | 2006-12-19 | Ag alloy reflective film for optical information recording medium, optical information recording medium and Ag alloy sputtering target for forming Ag alloy reflective film for optical information recording medium |
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JP2005368130A JP4377877B2 (ja) | 2005-12-21 | 2005-12-21 | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
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JP2007172734A JP2007172734A (ja) | 2007-07-05 |
JP4377877B2 true JP4377877B2 (ja) | 2009-12-02 |
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KR100568392B1 (ko) * | 2002-06-24 | 2006-04-05 | 가부시키가이샤 코베루코 카겐 | 은 합금 스퍼터링 타겟 및 그의 제조 방법 |
US7514037B2 (en) | 2002-08-08 | 2009-04-07 | Kobe Steel, Ltd. | AG base alloy thin film and sputtering target for forming AG base alloy thin film |
JP2006294195A (ja) * | 2005-04-14 | 2006-10-26 | Kobe Steel Ltd | 光情報記録用Ag合金反射膜、光情報記録媒体および光情報記録用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
JP4377877B2 (ja) | 2005-12-21 | 2009-12-02 | ソニー株式会社 | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
JP2007335061A (ja) * | 2006-05-16 | 2007-12-27 | Sony Corp | 光情報記録媒体とそのBCA(BurstCuttingArea)マーキング方法 |
US8092889B2 (en) * | 2006-08-28 | 2012-01-10 | Kobe Steel, Ltd. | Silver alloy reflective film for optical information storage media, optical information storage medium, and sputtering target for the deposition of silver alloy reflective film for optical information storage media |
JP2008117470A (ja) * | 2006-11-02 | 2008-05-22 | Sony Corp | 光情報記録媒体および光情報記録媒体の製造方法、BCA(BurstCuttingArea)マーキング方法 |
JP4540687B2 (ja) * | 2007-04-13 | 2010-09-08 | 株式会社ソニー・ディスクアンドデジタルソリューションズ | 読み出し専用の光情報記録媒体 |
JP4694543B2 (ja) * | 2007-08-29 | 2011-06-08 | 株式会社コベルコ科研 | Ag基合金スパッタリングターゲット、およびその製造方法 |
JP4833942B2 (ja) * | 2007-08-29 | 2011-12-07 | 株式会社コベルコ科研 | Ag基合金スパッタリングターゲット |
JP2009076129A (ja) * | 2007-09-19 | 2009-04-09 | Kobe Steel Ltd | 読み出し専用の光情報記録媒体 |
JP5046890B2 (ja) * | 2007-11-29 | 2012-10-10 | 株式会社コベルコ科研 | Ag系スパッタリングターゲット |
JP2009146465A (ja) * | 2007-12-11 | 2009-07-02 | Sony Corp | 再生専用型光ディスク媒体 |
JP2009259368A (ja) * | 2008-04-21 | 2009-11-05 | Sony Corp | 光ディスク製造方法、ディスク原盤製造方法、光ディスク |
JP5331420B2 (ja) | 2008-09-11 | 2013-10-30 | 株式会社神戸製鋼所 | 読み出し専用の光情報記録媒体および該光情報記録媒体の半透過反射膜形成用スパッタリングターゲット |
JP2010225572A (ja) * | 2008-11-10 | 2010-10-07 | Kobe Steel Ltd | 有機elディスプレイ用の反射アノード電極および配線膜 |
KR20110128198A (ko) | 2009-04-14 | 2011-11-28 | 가부시키가이샤 고베 세이코쇼 | 광 정보 기록 매체, 광 정보 기록 매체의 반사막 형성용 스퍼터링 타깃 |
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JPH0428032A (ja) | 1990-05-24 | 1992-01-30 | Daicel Chem Ind Ltd | 光情報記録媒体 |
JPH04252440A (ja) | 1991-01-28 | 1992-09-08 | Hitachi Maxell Ltd | 光情報記録媒体 |
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JP4377877B2 (ja) | 2005-12-21 | 2009-12-02 | ソニー株式会社 | 光情報記録媒体用Ag合金反射膜、光情報記録媒体および光情報記録媒体用Ag合金反射膜の形成用のAg合金スパッタリングターゲット |
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2005
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2006
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