JP3279435B2 - Paste for thin film pattern formation - Google Patents
Paste for thin film pattern formationInfo
- Publication number
- JP3279435B2 JP3279435B2 JP12930794A JP12930794A JP3279435B2 JP 3279435 B2 JP3279435 B2 JP 3279435B2 JP 12930794 A JP12930794 A JP 12930794A JP 12930794 A JP12930794 A JP 12930794A JP 3279435 B2 JP3279435 B2 JP 3279435B2
- Authority
- JP
- Japan
- Prior art keywords
- water
- film
- weight
- thin film
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2453—Coating containing SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/211—SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Paints Or Removers (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Surface Treatment Of Glass (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、リフトオフ法に用いら
れる水溶性のペーストに関する。The present invention relates to a water-soluble paste used for a lift-off method.
【0002】[0002]
【従来の技術】薄膜にパターンを形成する方法として
は、基体に無機微粒子を主成分とするパターン状の遮蔽
物を形成(マスキング)した後、適当な手段により薄膜
を形成し、その後に遮蔽物上の薄膜を遮蔽物とともに物
理的または化学的手段により取り除くリフトオフ法が工
業上有用な方法として知られている。2. Description of the Related Art As a method of forming a pattern on a thin film, a pattern-like shield mainly composed of inorganic fine particles is formed (masked) on a substrate, and then a thin film is formed by an appropriate means. The lift-off method of removing the upper thin film together with the shield by physical or chemical means is known as an industrially useful method.
【0003】特開昭49−113573号公報では、酸
化マグネシウム、酸化アルミニウム等の粉末を、また、
特公昭61−43806号公報では、炭酸カルシウム単
独またはこれと黒鉛との混合物を遮蔽物として用いるこ
とが提案されている。JP-A-49-113573 discloses powders of magnesium oxide, aluminum oxide, etc.
JP-B-61-43806 proposes to use calcium carbonate alone or a mixture thereof with graphite as a shielding material.
【0004】これらの酸化物や炭酸塩は、特に熱CVD
法により薄膜を形成する際、強い酸化雰囲気にさらされ
ることにより、薄膜が形成される基体のガラスとわずか
に反応し、薄膜形成後遮蔽物を除去して得られる基体の
表面には曇りが生じ、きれいな外観を要求される用途に
は使用できない。さらに遮蔽物を除去して残った透明導
電膜等の薄膜の端が持ち上がるいわゆるスパイク現象が
起りやすい。[0004] These oxides and charcoal salt, particularly a thermal CVD
When a thin film is formed by the method, it is slightly exposed to a strong oxidizing atmosphere and reacts slightly with the glass of the base on which the thin film is formed. It cannot be used for applications requiring a clean appearance. Further, a so-called spike phenomenon in which the edge of the thin film such as the transparent conductive film left after the removal of the shield is lifted easily occurs.
【0005】特開平2−75536号公報では、メソフ
ェーズカーボン小球体を遮蔽物として用いるものが提案
されている。この方法は、スパイクは小さくなるという
利点があるが、特に熱CVD法により薄膜を形成する
際、強い酸化雰囲気にさらされることによりカーボンが
蒸発し、わずかながら基体ガラス表面に曇りが生じるこ
とが明らかになっている。[0005] Japanese Patent Application Laid-Open No. 2-75536 proposes a device using a small mesophase carbon sphere as a shield. This method has an advantage that spike is reduced, particularly when forming a thin film by a thermal CVD method, carbon is evaporated by exposure to strong oxidizing atmosphere, that is Ri cloudy slightly substrate glass surface occurs It is clear.
【0006】また、これら従来の遮蔽物は主に無機化合
物と充填物とからなるため、緻密な膜構造をしていな
い。したがって、これらの遮蔽物の上に、たとえば熱C
VD法により薄膜を形成した場合、完全に原料ガスを遮
断できない場合があり、わずかながら遮蔽物の下にも原
料ガスの回り込みが観察される。また、この回り込み量
が増えると、遮蔽物そのものが基体に焼き付くため、リ
フトオフ可能な薄膜の厚さは500nmまでであった。Further, since these conventional shields mainly consist of an inorganic compound and a filler, they do not have a dense film structure. Therefore, on these shields, for example, heat C
When the thin film is formed by the VD method, the source gas may not be completely shut off in some cases, and a small amount of the source gas may be observed under the shield. Further, when the wraparound amount increases, shielding itself for rather image sticking to the substrate, the thickness of the lift-off can be thin films were in in 500n m until.
【0007】これに対して、本出願人が特願平5−16
6512号で提案している水溶性無機塩被膜を用いる薄
膜除去方法は、スパイクが観察されないという優れた特
徴がある。またアルギン酸ナトリウム等と組み合わせ
て、スクリーン印刷により薄膜のパターニングを行うこ
とも提案している。しかし、このインクをスクリーン印
刷法に用いた場合、精細なパターニングがしにくいこと
がわかった。On the other hand, the present applicant has filed Japanese Patent Application No.
The thin film removal method using a water-soluble inorganic salt coating proposed in No. 6512 has an excellent feature that no spike is observed. It has also been proposed to pattern a thin film by screen printing in combination with sodium alginate or the like. However, it was found that when this ink was used for the screen printing method, it was difficult to perform fine patterning.
【0008】[0008]
【発明が解決しようとする課題】本発明は、スクリーン
印刷法に適用可能であり、かつ、スパイクが観察されな
い薄膜パターン形成用ペーストの提供を目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a paste for forming a thin film pattern which is applicable to a screen printing method and in which spikes are not observed.
【0009】[0009]
【課題を解決するための手段】本発明は、水溶性無機塩
を3〜15重量%、水溶性高分子からなる増粘剤を0.
5〜6重量%、平均粒径が0. 1〜2μmのフィラーを
0. 1〜10重量%、アルコール系有機溶剤を1〜20
重量%、および水を50〜95重量%含むことを特徴と
する薄膜パターン形成用ペーストである。According to the present invention, a water-soluble inorganic salt is used in an amount of 3 to 15% by weight, and a thickener comprising a water-soluble polymer is used in an amount of 0.1 to 0.1%.
5 to 6% by weight, 0.1 to 10% by weight of filler having an average particle size of 0.1 to 2 μm, and 1 to 20% of alcoholic organic solvent.
It is a paste for forming a thin film pattern, comprising 50% by weight and 50 to 95% by weight of water.
【0010】本発明のペーストは、薄膜を形成する場所
ではない部分の基体表面に、スクリーン印刷法により高
精度に印刷される。その後、乾燥・焼成により水溶性無
機塩とフィラーとからなる緻密な水溶性無機塩被膜が形
成され、次いで基体表面に薄膜が適当な方法により形成
される。その後、この薄膜付き基体が水洗されて、水溶
性無機塩被膜とその被膜上面の薄膜だけが除去されるこ
とにより、高精細な薄膜パターンが形成される。[0010] The paste of the present invention is printed with high precision by a screen printing method on the surface of the substrate other than where the thin film is to be formed. Thereafter, a dense water-soluble inorganic salt film composed of the water-soluble inorganic salt and the filler is formed by drying and baking, and then a thin film is formed on the surface of the substrate by an appropriate method. Thereafter, the substrate with the thin film is washed with water to remove only the water-soluble inorganic salt film and the thin film on the upper surface of the film, thereby forming a high-definition thin film pattern.
【0011】本発明における水溶性無機塩としては、水
への溶解度が高く易水溶性で、安価である等の一般的に
望ましい性質の他に、所望のパターンをもって基体上に
薄く、均一に、点在することなく、緻密に覆うことがで
きるものが望ましい。As the water-soluble inorganic salt in the present invention, in addition to generally desirable properties such as high solubility in water, easy water-solubility and inexpensiveness, a thin, uniform and desired pattern on a substrate can be obtained. What can be covered densely without being scattered is desirable.
【0012】このような物質としては、共有結合性が強
く、網目構造を形成するものが好ましく、たとえば、リ
ン酸塩、ホウ酸塩、ケイ酸塩、硫酸塩、硫黄を含む無機
塩、およびこれらの塩の複塩などが挙げられる。特にリ
ン酸塩、ホウ酸塩は、良好な結果が得られるので、好ま
しい。より具体的には、トリポリリン酸ナトリウム、ヘ
キサメタリン酸ナトリウム、四ホウ酸ナトリウム、四ホ
ウ酸カリウムなどが挙げられる。[0012] Such materials, strong covalent, is preferable to form a network structure, for example, phosphates, borates, silicates, sulfates, inorganic salt including sulfur, and their And the like. In particular, phosphates and borates are preferable since good results can be obtained. More specifically, sodium tripolyphosphate, sodium hexametaphosphate, sodium tetraborate, potassium tetraborate and the like can be mentioned.
【0013】水溶性無機塩の含有量はペースト中に3〜
15重量%とされる。15重量%超過では、乾燥、焼成
後均一で緻密な被膜にすることができない。The content of the water-soluble inorganic salt is 3 to 3 in the paste.
It is 15% by weight. If it exceeds 15% by weight, a uniform and dense film cannot be formed after drying and firing.
【0014】水溶性高分子からなる増粘剤としては、水
溶性で粘性を適正化できる水溶性高分子、たとえばヒド
ロキシエチルセルロース、ヒドロキシプロピルセルロー
ス、カルボキシメチルセルロースなどの多糖類、アルギ
ン酸ナトリウム、アルギン酸アンモニウムなどの有機酸
塩、ポリビニルアルコール、ポリエチレングリコール、
ポリアクリルアミド、ポリアクリル酸ナトリウム等が使
用できる。特にアルギン酸ナトリウム、アルギン酸アン
モニウムで良好な結果が得られる。Examples of the thickener comprising a water-soluble polymer include water-soluble polymers which are water-soluble and whose viscosity can be adjusted appropriately, for example, polysaccharides such as hydroxyethylcellulose, hydroxypropylcellulose and carboxymethylcellulose, sodium alginate and ammonium alginate. Organic acid salts, polyvinyl alcohol, polyethylene glycol,
Polyacrylamide, sodium polyacrylate and the like can be used. Particularly good results are obtained with sodium alginate and ammonium alginate.
【0015】水溶性高分子からなる増粘剤の含有量はペ
ースト中に0. 5〜6重量%とされ、好ましくは1. 5
〜4重量%とされる。The content of the thickener comprising a water-soluble polymer is 0.5 to 6% by weight in the paste, preferably 1.5.
44% by weight.
【0016】水溶性高分子からなる増粘剤の他に、パタ
ーニングを高精細にするには、ぺーストに適度なチクソ
トロピー性を持たせる必要があり、このためにペースト
中にフィラーを含有させる。このフィラーとしては無機
フィラー、有機フィラーが使用できる。In addition to the thickener composed of a water-soluble polymer, the paste must have an appropriate thixotropy in order to achieve high-definition patterning. For this purpose, a paste is included in the paste. As the filler, an inorganic filler and an organic filler can be used.
【0017】たとえば熱CVD法により約500℃で薄
膜を形成する場合には、CeO2 、TiO2 、ZrO
2 、Nb2 O 5 、カーボンなどの無機フィラーが基体と
焼き付きにくく、好ましい。薄膜を低い温度で形成する
場合には、ポリ塩化ビニル、ポリメチルメタクリレー
ト、ポリスチレン等の有機フィラーを使用できる。For example, when a thin film is formed at about 500 ° C. by a thermal CVD method, CeO 2 , TiO 2 , ZrO
2 , inorganic fillers such as Nb 2 O 5 and carbon are preferable because they hardly stick to the substrate. When a thin film is formed at a low temperature, an organic filler such as polyvinyl chloride, polymethyl methacrylate, and polystyrene can be used.
【0018】フィラーの平均粒径は0. 1〜2μmであ
ることが必要であり、好ましくは0. 1〜1. 5μmで
ある。2μm超では、熱処理後緻密な被膜にすることが
できない。The average particle size of the filler needs to be 0.1 to 2 μm, and preferably 0.1 to 1.5 μm. If it exceeds 2 μm, a dense film cannot be formed after the heat treatment.
【0019】フィラーの含有量はペースト中に0. 1〜
10重量%とされ、好ましくは0.4〜7重量%とされ
る。10重量%超では、熱処理後被膜が緻密な構造とな
らず遮蔽性が低下したり、薄膜をリフトオフした後、エ
ッジにスパイクとして残ったりする。The content of the filler is 0.1 to 0.1% in the paste.
The content is 10% by weight, preferably 0.4 to 7% by weight. If it exceeds 10% by weight, the film does not have a dense structure after the heat treatment and the shielding property is reduced, or after the thin film is lifted off, spikes remain on the edge.
【0020】本発明において用いられる水の含有量はペ
ースト中に50〜95重量%とされ、好ましくは75〜
95重量%とされる。The content of water used in the present invention is 50 to 95% by weight in the paste, preferably 75 to 95% by weight.
It is 95% by weight.
【0021】溶媒が水だけの場合には、スクリーン印刷
すると固形分がスクリーン印刷版に付着するため連続印
刷枚数が限られる。その点を改良するために、ペースト
中にアルコール系有機溶剤を添加する必要がある。When the solvent is water alone, the number of continuous prints is limited because solids adhere to the screen printing plate when screen printing is performed. In order to improve this point, it is necessary to add an alcoholic organic solvent to the paste.
【0022】このアルコール系有機溶剤としては、エタ
ノール、2−プロパノール、エチレングリコール、プロ
ピレングリコール、グリセリンなどが挙げられる。アル
コール系有機溶剤の含有量はペースト中に1〜20重量
%とされ、好ましくは5〜10重量%とされる。[0022] As the alcohol-based organic solvents, ethanol, 2-propanol, ethylene glycol, propylene grayed recall, glycerin and the like. The content of the alcohol-based organic solvent in the paste is 1 to 20% by weight, preferably 5 to 10% by weight.
【0023】本発明のペーストには、その他にフィラー
の分散剤やペースト印刷時の消泡剤を添加できる。縮合
ナフタレンスルホン酸ナトリウム、ポリカルボン酸アン
モニウムなどの界面活性剤が好適な例として挙げられ
る。The paste of the present invention may further contain a filler dispersant or a defoamer for paste printing. Preferred examples include surfactants such as condensed sodium naphthalene sulfonate and ammonium polycarboxylate.
【0024】水溶性無機塩が塗布される基体は、特に限
定されず、ガラス、プラスチック、セラミックス、単結
晶体、金属、またはこれらの表面に各種コーティングが
されたもの等が挙げられる。The substrate water-soluble inorganic salt is applied is not particularly limited, glass, plastics, ceramics, single crystal, metal, or the like to that the various coating these surfaces thereof.
【0025】パターニングすべき薄膜の形成方法は、特
に限定されず、蒸着法、スパッタリング法、スプレー
法、ディップ法、CVD法、またはキャスティング法等
が挙げられる。The method for forming a thin film to be patterned is not particularly limited, and examples thereof include a vapor deposition method, a sputtering method, a spray method, a dipping method, a CVD method, and a casting method.
【0026】[0026]
【作用】本発明において基体上に塗布されたペースト
は、従来のペーストと異なり、乾燥、焼成後はフィラー
を含んだ厚さ約1〜2μmの緻密な膜となる。したがっ
て、薄膜を形成する際のガスの回り込みがない。また、
被膜は水溶性無機塩であるため、基体を水洗することで
容易に剥離し、従来困難であった1μm以上の薄膜のリ
フトオフも可能となる。また、スパイク現象も起こらな
い。According to the present invention, the paste applied on the substrate, unlike the conventional paste, after drying and firing, becomes a dense film containing a filler and having a thickness of about 1 to 2 [mu] m. Therefore, there is no gas flow when forming a thin film. Also,
Since the coating is a water-soluble inorganic salt, it is easily peeled off by washing the substrate with water, and it is possible to lift off a thin film of 1 μm or more, which has been difficult in the past. Also, no spike phenomenon occurs.
【0027】[0027]
【実施例】[実施例1] トリポリリン酸ナトリウム6. 4重量%、アルギン酸ア
ンモニウム3. 0重量%、平均粒径0. 6μmの酸化セ
リウム0.85重量%、エタノール4.25重量%、水
85.1重量%、ポリカルボン酸アンモニウム0. 4重
量%からなるペーストをスクリーン印刷で所望のパター
ンをもってガラス基体に印刷した後、120℃で10分
乾燥し、さらに450℃で20分焼成したところ、クラ
ックのない緻密な水溶性被膜が形成された。EXAMPLES Example 1 6.4% by weight of sodium tripolyphosphate, 3.0% by weight of ammonium alginate, 0.85% by weight of cerium oxide having an average particle size of 0.6 μm, 4.25% by weight of ethanol, and 85 of water A paste consisting of 0.1% by weight and 0.4% by weight of ammonium polycarboxylate was printed on a glass substrate in a desired pattern by screen printing, dried at 120 ° C. for 10 minutes, and further baked at 450 ° C. for 20 minutes. A dense water-soluble coating without cracks was formed.
【0028】このガラス基体を500℃に加熱し、この
基体面にSiH4 とO2 ガスを吹き付け、SiO2 膜
(膜厚約100nm)を形成し、引き続きガラス基体を
530℃に加熱し、その表面のSiO2 膜上にガス状の
SnCl4 とH2 Oとを吹き付けて、SnO2 膜(膜厚
約150nm)を形成した。この基体を流水下でブラシ
洗浄すると、水溶性被膜上に形成されたSiO2 膜、S
nO2 膜は水溶性被膜とともに流れ落ち、パターニング
されたSiO2 下地膜付きSnO2 導電性薄膜がガラス
基体上に形成できた。水溶性被膜があった部分のガラス
上にはSiO2 膜およびSnO2 膜はなく、無色透明で
あった。また、スパイクは観察されなかった。The glass substrate was heated to 500 ° C., and a SiH 4 and O 2 gas was blown onto the substrate surface to form a SiO 2 film (about 100 nm thick). Subsequently, the glass substrate was heated to 530 ° C. Gaseous SnCl 4 and H 2 O were sprayed on the surface SiO 2 film to form a SnO 2 film (about 150 nm thick). When this substrate was brush-cleaned under running water, the SiO 2 film formed on the water-soluble film, S
The nO 2 film flowed down together with the water-soluble coating, and a patterned SnO 2 conductive thin film with a SiO 2 underlayer was formed on the glass substrate. There was no SiO 2 film or SnO 2 film on the glass in the portion where the water-soluble film was present, and the glass was colorless and transparent. No spikes were observed.
【0029】[実施例2] トリポリリン酸ナトリウム4.3重量%、アルギン酸ナ
トリウム2. 1重量%、平均粒径1. 2μmの酸化チタ
ン3.4重量%、2−プロパノール4.3重量%、水8
5.5重量%、ポリカルボン酸アンモニウム0. 43重
量%からなるペーストをスクリーン印刷でガラス基体に
印刷した後、120℃で10分乾燥し、さらに500℃
で10分焼成したところ、クラックのない緻密な水溶性
被膜が形成された。Example 2 4.3% by weight of sodium tripolyphosphate, 2.1% by weight of sodium alginate, 3.4% by weight of titanium oxide having an average particle size of 1.2 μm, 4.3% by weight of 2-propanol, water 8
A paste composed of 5.5% by weight and 0.43% by weight of ammonium polycarboxylate was printed on a glass substrate by screen printing, dried at 120 ° C. for 10 minutes, and further heated at 500 ° C.
For 10 minutes, a dense water-soluble coating without cracks was formed.
【0030】このガラス基体を500℃に加熱し、この
基体面にSiH4 とO2 ガスを吹き付け、SiO2 膜
(膜厚約100nm)を形成し、引き続きガラス基体を
530℃に加熱し、その表面のSiO2 膜上にガス状の
SnCl4 とH2 Oとを吹き付けて、SnO2 膜(膜厚
約1μm)を形成した。この基体を流水下でブラシ洗浄
すると、水溶性被膜上に形成されたSiO2 膜、SnO
2 膜は水溶性被膜とともに流れ落ち、パターニングされ
たSiO2 下地膜付きSnO2 導電性薄膜がガラス基体
状に形成できた。水溶性被膜があった部分のガラス上に
はSiO2 膜およびSnO2 膜はなく、無色透明であっ
た。また、スパイクは観察されなかった。The glass substrate was heated to 500 ° C., and SiH 4 and O 2 gas were sprayed on the substrate surface to form an SiO 2 film (about 100 nm in thickness). Then, the glass substrate was heated to 530 ° C. Gaseous SnCl 4 and H 2 O were sprayed onto the surface SiO 2 film to form a SnO 2 film (about 1 μm thick). When this substrate was brush-cleaned under running water, the SiO 2 film formed on the water-soluble film, SnO 2
The two films flowed down together with the water-soluble film, and a patterned SnO 2 conductive thin film with a SiO 2 underlayer was formed on the glass substrate. There was no SiO 2 film or SnO 2 film on the glass in the portion where the water-soluble film was present, and the glass was colorless and transparent. No spikes were observed.
【0031】[比較例1] トリポリリン酸ナトリウム4.5重量%、アルギン酸ナ
トリウム3.6重量%、水91重量%、ポリカルボン酸
アンモニウム0. 9重量%からなるペーストをスクリー
ン印刷で所定のパターンをもってガラス基体に印刷を試
みたが、実施例1と相違して、印刷後の膜にはカケ、カ
スレなどパターンの一部分が寸断された箇所があった。
この基体を120℃で10分乾燥し、さらに500℃で
10分焼成したところ、水溶性被膜の一部にはクラック
があったが、水溶性被膜の他の部分は緻密な膜が形成さ
れていた。Comparative Example 1 A paste consisting of 4.5% by weight of sodium tripolyphosphate, 3.6% by weight of sodium alginate, 91% by weight of water, and 0.9% by weight of ammonium polycarboxylate was screen-printed with a predetermined pattern. An attempt was made to print on a glass substrate. However, unlike Example 1, the printed film had portions where a part of the pattern was cut off, such as chips and blurring.
When this substrate was dried at 120 ° C. for 10 minutes and further baked at 500 ° C. for 10 minutes, a crack was found in a part of the water-soluble coating, but a dense film was formed in the other part of the water-soluble coating. Was.
【0032】このガラス基体に実施例1と同様にしてS
iO2 膜、SnO2 膜を形成した後、流水下でブラシ洗
浄したところ、水溶性被膜のクラック部分からSiO2
膜、SnO2 膜がガラス基体側に回り込んでいることが
わかった。一方、均一な水溶性被膜の形成されていた部
分のガラス面上にはSiO2 膜、SnO2 膜の回り込み
は観察されなかった。On this glass substrate, S
iO 2 film, after forming a SnO 2 film was brush cleaning with running water, SiO 2 from cracking portion of the water-soluble film
It was found that the film and the SnO 2 film wrapped around the glass substrate. On the other hand, the SiO 2 film and the SnO 2 film were not observed on the glass surface where the uniform water-soluble film was formed.
【0033】[比較例2] トリポリリン酸ナトリウム6.6重量%、アルギン酸ア
ンモニウム4.9重量%、平均粒径3μmの酸化セリウ
ム1.6重量%、2−プロパノール4.1重量%、水8
2.4重量%、ポリカルボン酸アンモニウム0. 4重量
%からなるペーストをスクリーン印刷で所定のパターン
をもってガラス基体に印刷した後、120℃で10分乾
燥し、さらに500℃で10分焼成したところ、一部の
酸化セリウム粒子のまわりの水溶性被膜にクラックがあ
った。Comparative Example 2 6.6% by weight of sodium tripolyphosphate, 4.9% by weight of ammonium alginate, 1.6% by weight of cerium oxide having an average particle size of 3 μm, 4.1% by weight of 2-propanol, water 8
A paste consisting of 2.4% by weight and 0.4% by weight of ammonium polycarboxylate was printed on a glass substrate in a predetermined pattern by screen printing, dried at 120 ° C. for 10 minutes, and baked at 500 ° C. for 10 minutes. The water-soluble coating around some cerium oxide particles had cracks.
【0034】このガラス基体に実施例1と同様にしてS
iO2 膜、SnO2 膜を形成した後、流水下でブラシ洗
浄したところ、水溶性被膜のクラック部分からSiO2
膜、SnO2 膜がガラス基体側に回り込んでいることが
わかった。また水溶性被膜のエッジ部分にはCeO2 粒
子が残り、スパイクが形成されていた。On this glass substrate, S
iO 2 film, after forming a SnO 2 film was brush cleaning with running water, SiO 2 from cracking portion of the water-soluble film
It was found that the film and the SnO 2 film wrapped around the glass substrate. Also, CeO 2 particles remained at the edge of the water-soluble coating, and spikes were formed.
【0035】[比較例3] トリポリリン酸ナトリウム15.3重量%、アルギン酸
アンモニウム7.6重量%、平均粒径0.6μmの酸化
セリウム0.8重量%、水76.3重量%からなるペー
ストをスクリーン印刷で所定のパターンをもってガラス
基体に印刷した後、120℃で10分乾燥し、さらに5
00℃で10分焼成したところ、緻密な水溶性被膜が形
成されなかった。Comparative Example 3 A paste comprising 15.3% by weight of sodium tripolyphosphate, 7.6% by weight of ammonium alginate, 0.8% by weight of cerium oxide having an average particle diameter of 0.6 μm, and 76.3% by weight of water was prepared. After printing on a glass substrate with a predetermined pattern by screen printing, drying at 120 ° C. for 10 minutes,
When calcined at 00 ° C. for 10 minutes, no dense water-soluble coating was formed.
【0036】このガラス基体に実施例1と同様にしてS
iO2 膜、SnO2 膜を形成した後、流水下でブラシ洗
浄したところ、水溶性被膜のクラック部分からSiO2
膜、SnO2 膜がガラス基体側に回り込んでいることが
わかった。On this glass substrate, S
iO 2 film, after forming a SnO 2 film was brush cleaning with running water, SiO 2 from cracking portion of the water-soluble film
It was found that the film and the SnO 2 film wrapped around the glass substrate.
【0037】[0037]
【発明の効果】本発明によれば、水溶性無機塩を高精細
に基体上にスクリーン印刷でき、それを乾燥、焼成する
ことでクラックや欠けのない緻密な水溶性被膜が得られ
る。この被膜は易水溶性であるため、薄膜形成後の被膜
の剥離を水洗で容易に行うことができ、剥離性に優れる
ため、約1μmの薄膜でもパターニング可能となる。ま
た被膜は緻密なためガスの回り込みを防ぎ、剥離後の基
体の表面には曇りがなく、さらに、スパイク現象も起こ
らない。According to the present invention, a water-soluble inorganic salt can be screen-printed on a substrate with high precision, and a dense water-soluble coating free of cracks and chips can be obtained by drying and firing. Since this film is easily soluble in water, the film after the formation of the thin film can be easily peeled off by washing with water. Since the film has excellent peelability, it can be patterned even with a thin film of about 1 μm. The coating prevents the diffraction of dense for gases, surface cloudy Riganaku substrate after the separation, further, does not occur even spiking.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平3−211768(JP,A) 特開 昭61−106680(JP,A) 特開 昭59−149958(JP,A) 特開 昭55−105331(JP,A) 特開 平7−908(JP,A) 特開 昭62−256881(JP,A) 特開 平1−265591(JP,A) 特開 平2−64172(JP,A) (58)調査した分野(Int.Cl.7,DB名) C09D 1/00 - 201/00 B05D 7/24 G03F 1/06 H05K 3/02 - 3/08 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-211768 (JP, A) JP-A-61-106680 (JP, A) JP-A-59-149958 (JP, A) JP-A-55-149958 105331 (JP, A) JP-A-7-908 (JP, A) JP-A-62-256881 (JP, A) JP-A-1-265591 (JP, A) JP-A-2-64172 (JP, A) (58) Field surveyed (Int.Cl. 7 , DB name) C09D 1/00-201/00 B05D 7/24 G03F 1/06 H05K 3/02-3/08
Claims (3)
分子からなる増粘剤を0. 5〜6重量%、平均粒径が
0. 1〜2μmのフィラーを0. 1〜10重量%、アル
コール系有機溶剤を1〜20重量%、および水を50〜
95重量%含むことを特徴とする薄膜パターン形成用ペ
ースト。1. A water-soluble inorganic salt in an amount of 3 to 15% by weight, a water-soluble polymer thickener in an amount of 0.5 to 6% by weight, and a filler having an average particle size of 0.1 to 2 μm in an amount of 0.1 to 1%. 10% by weight, 1-20% by weight of an alcoholic organic solvent, and 50-
A paste for forming a thin film pattern, comprising 95% by weight.
ウ酸塩である請求項1の薄膜パターン形成用ペースト。2. The paste for forming a thin film pattern according to claim 1, wherein the water-soluble inorganic salt is a phosphate and / or a borate.
薄膜パターン形成用ペースト。3. The paste for forming a thin film pattern according to claim 1, wherein the filler is an inorganic filler.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12930794A JP3279435B2 (en) | 1994-06-10 | 1994-06-10 | Paste for thin film pattern formation |
PCT/JP1994/001938 WO1995034608A1 (en) | 1994-06-10 | 1994-11-17 | Substrate coated with water-soluble salt |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12930794A JP3279435B2 (en) | 1994-06-10 | 1994-06-10 | Paste for thin film pattern formation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07331180A JPH07331180A (en) | 1995-12-19 |
JP3279435B2 true JP3279435B2 (en) | 2002-04-30 |
Family
ID=15006333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12930794A Expired - Fee Related JP3279435B2 (en) | 1994-06-10 | 1994-06-10 | Paste for thin film pattern formation |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP3279435B2 (en) |
WO (1) | WO1995034608A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009267417A (en) * | 2008-04-28 | 2009-11-12 | Ind Technol Res Inst | Method for fabricating conductive pattern on flexible substrate and protective ink used therein |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6153535A (en) * | 1996-10-23 | 2000-11-28 | Asahi Glass Company Ltd. | Method for removing a thin film for a window glass |
US6231924B1 (en) * | 1996-11-26 | 2001-05-15 | Nippon Sheet Glass Company, Limited | Method of partially forming oxide layer |
US6406639B2 (en) | 1996-11-26 | 2002-06-18 | Nippon Sheet Glass Co., Ltd. | Method of partially forming oxide layer on glass substrate |
GB2325562B (en) | 1997-05-23 | 2001-08-08 | Asahi Glass Co Ltd | A cathode ray tube glass,a method for producing the cathode ray tube glass,and method for cleaning the cathode ray tube glass |
BR9915240A (en) | 1998-11-10 | 2001-07-24 | Nippon Sheet Glass Co Ltd | Glass article, method for handling the glass article and handling tool for the glass article |
JP2002264461A (en) * | 2001-03-09 | 2002-09-18 | Dainippon Ink & Chem Inc | Laminated pattern forming method |
KR20120080935A (en) * | 2011-01-10 | 2012-07-18 | 삼성전기주식회사 | Conductive polymer composition and conductive film prepared from the composition |
JP6156902B2 (en) * | 2012-05-24 | 2017-07-05 | 互応化学工業株式会社 | Resist agent for lift-off method and method for forming conductor pattern |
CN113717604A (en) * | 2020-05-25 | 2021-11-30 | 苏州市汉宜化学有限公司 | High-lubrication water-soluble nickel plating slip-increasing protective agent |
Family Cites Families (3)
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---|---|---|---|---|
JPH0648752B2 (en) * | 1986-07-31 | 1994-06-22 | 富士通株式会社 | Method for forming thick film pattern |
JP3072324B2 (en) * | 1990-03-06 | 2000-07-31 | 石原薬品株式会社 | Weld spatter adhesion inhibitor |
JPH0411981A (en) * | 1990-04-27 | 1992-01-16 | Kaken Kogyo Kk | Contaminant removing method and agent |
-
1994
- 1994-06-10 JP JP12930794A patent/JP3279435B2/en not_active Expired - Fee Related
- 1994-11-17 WO PCT/JP1994/001938 patent/WO1995034608A1/en active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009267417A (en) * | 2008-04-28 | 2009-11-12 | Ind Technol Res Inst | Method for fabricating conductive pattern on flexible substrate and protective ink used therein |
Also Published As
Publication number | Publication date |
---|---|
WO1995034608A1 (en) | 1995-12-21 |
JPH07331180A (en) | 1995-12-19 |
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