JP2007123861A5

JP2007123861A5 -

Info

Publication number: JP2007123861A5
Application number: JP2006262991A
Authority: JP
Filing date: 2006-09-27
Publication date: 2008-09-18
Anticipated expiration: 2026-09-27

Claims

A gate electrode on a substrate, a gate insulating film, an oxide semiconductor film having an amorphous region and a crystalline region, a conductive film,
The conductive film is provided in contact with the oxide semiconductor film;
The semiconductor device, wherein the oxide semiconductor film includes the crystal region in a region overlapping with the gate electrode with the gate insulating film interposed therebetween.

2. The semiconductor device according to claim 1 , wherein the gate electrode has a lower reflectance with respect to a light source used for crystallization of the oxide semiconductor film than the conductive film.

3. The semiconductor device according to claim 1 , wherein the gate electrode has a higher heat absorption rate for a light source used for crystallization of the oxide semiconductor film than the conductive film.

4. The semiconductor device according to claim 1 , wherein the conductive film has a stacked structure of a first conductive film made of a titanium film and a second conductive film made of aluminum or an aluminum alloy. .

In any one of claims 1 to 4, wherein the oxide semiconductor film, a zinc oxide, titanium oxide, magnesium oxide, zinc oxide, cadmium zinc, cadmium _oxide, InGaO 3 _{(ZnO) 5,} and an In-Ga-Zn- A semiconductor device selected from an O-based amorphous oxide semiconductor.

Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming an oxide semiconductor film on the gate insulating film;
By lamp heating the gate electrode, of the oxide semiconductor film, a method for manufacturing a semiconductor device characterized by crystallizing a portion of a region overlapping with at least the gate electrode.

Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming an oxide semiconductor film on the gate insulating film;
By lamp-heating the gate electrode, a first oxide semiconductor region that overlaps the gate electrode and a second oxide semiconductor region that does not overlap the gate electrode are formed in the oxide semiconductor film ,
Before SL first oxide semiconductor region, a method for manufacturing a semiconductor device, wherein the high crystallinity than the second oxide semiconductor region.

Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming a conductive film on the gate insulating film;
Forming an oxide semiconductor film over the gate insulating film and the conductive film;
Wherein by the gate electrode to lamp heating, the method for manufacturing a semiconductor device, characterized by selectively crystallizing a portion of the oxide semiconductor film.

Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming an oxide semiconductor film on the gate insulating film;
Forming a conductive film on the oxide semiconductor film;
Wherein by the gate electrode to lamp heating, the method for manufacturing a semiconductor device, characterized by selectively crystallizing a portion of the oxide semiconductor film.

Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming a conductive film on the gate insulating film;
Forming an oxide semiconductor film over the gate insulating film and the conductive film;
By lamp-heating the gate electrode, a first oxide semiconductor region that overlaps the gate electrode and a second oxide semiconductor region that does not overlap the gate electrode are formed in the oxide semiconductor film ,
Before SL first oxide semiconductor region, a method for manufacturing a semiconductor device, wherein the high crystallinity than the second oxide semiconductor region.

Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming an oxide semiconductor film on the gate insulating film;
Forming a conductive film on the oxide semiconductor film;
By lamp-heating the gate electrode, a first oxide semiconductor region that overlaps the gate electrode and a second oxide semiconductor region that does not overlap the gate electrode are formed in the oxide semiconductor film ,
Before SL first oxide semiconductor region, a method for manufacturing a semiconductor device, wherein the high crystallinity than the second oxide semiconductor region.

In any one of claims 8 to 11, wherein the gate electrode, the method for manufacturing a semiconductor device, wherein the low reflectance for light emitted from the lamp than said conductive film.

In any one of claims 8 to 12, wherein the gate electrode, the method for manufacturing a semiconductor device, wherein the high heat absorption rate than the conductive film.

In any one of claims 8 to 13, wherein the conductive film is characterized by having a first conductive film made of a titanium film, a laminated structure of the second conductive film made of aluminum or aluminum alloy A method for manufacturing a semiconductor device.

In any one of claims 6 to 14, wherein the oxide semiconductor film, a zinc oxide, titanium oxide, magnesium oxide, zinc oxide, cadmium zinc, cadmium _oxide, InGaO 3 _{(ZnO) 5,} and an In-Ga-Zn- A method for manufacturing a semiconductor device, which is any one selected from O-based amorphous oxide semiconductors.

16. The method for manufacturing a semiconductor device according to claim 6 , wherein the oxide semiconductor film is formed by a sputtering method.

The method for manufacturing a semiconductor device according to claim 6, wherein the lamp heating is performed at 250 ° C. to 570 ° C.