JP2003133707A - Method and apparatus for placing electronic component - Google Patents
Method and apparatus for placing electronic componentInfo
- Publication number
- JP2003133707A JP2003133707A JP2001326423A JP2001326423A JP2003133707A JP 2003133707 A JP2003133707 A JP 2003133707A JP 2001326423 A JP2001326423 A JP 2001326423A JP 2001326423 A JP2001326423 A JP 2001326423A JP 2003133707 A JP2003133707 A JP 2003133707A
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- circuit
- sealing resin
- heating
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えば半導体素子
等の電子部品を、例えば回路基板等の回路形成体へバン
プを介して装着する際の装着方法、及び該装着方法を実
行する装着装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting method for mounting an electronic component such as a semiconductor element on a circuit-formed body such as a circuit board via bumps, and a mounting apparatus for executing the mounting method. .
【０００２】[0002]
【従来の技術】今日、電子回路基板は、あらゆる製品に
使用されるようになり、かつ、携帯機器の増加により、
ＩＣチップをパッケージで封止することなく裸のまま回
路基板に搭載するフリップチップ実装方法が求められて
いる。電子機器の回路基板へＩＣチップを接合する従来
のフリップチップ実装方法について、以下に説明する。
図９から図１１に示すように、絶縁性の封止樹脂を半導
体素子の実装における封止材として使用する半導体素子
の実装工法が提案されている。図９に示すように、半導
体ウエハ上にメッキ技術によりバンプ２を形成をする。
このメッキバンプ２の高さは、通常１５〜２０μｍとし
ている。その後に、当該半導体ウエハをダイシング装置
により半導体素子１毎に分割し、個片化する。尚、図９
は、半導体素子１を示している。2. Description of the Related Art Today, electronic circuit boards are used in all kinds of products, and due to the increase in portable devices,
There is a demand for a flip chip mounting method in which an IC chip is mounted on a circuit board as it is without being sealed with a package. A conventional flip-chip mounting method for bonding an IC chip to a circuit board of an electronic device will be described below.
As shown in FIGS. 9 to 11, there has been proposed a semiconductor element mounting method in which an insulating sealing resin is used as a sealing material in mounting a semiconductor element. As shown in FIG. 9, bumps 2 are formed on a semiconductor wafer by a plating technique.
The height of the plating bump 2 is usually 15 to 20 μm. After that, the semiconductor wafer is divided into individual semiconductor elements 1 by a dicing device and individualized. Incidentally, FIG.
Indicates the semiconductor element 1.
【０００３】一方、図１０に示すように、異方性導電フ
ィルムと呼ばれる導電粒子を含んだシート状の封止樹脂
５を、回路基板３上における、上記半導体素子１が実装
される領域に置き、カートリッジヒータを内蔵した貼り
付けツールを用いて加熱、加圧を行って回路基板３上に
貼り付ける。尚、上記実装領域には、回路基板３上に形
成されている回路電極４が含まれる。このときの加熱動
作では、封止樹脂５に対して硬化反応を起こさず、軟化
を起こさせ、回路基板３への貼り付けを容易にする温度
が必要であり、通常６０〜１００℃の温度にて行われ
る。On the other hand, as shown in FIG. 10, a sheet-shaped sealing resin 5 containing conductive particles called an anisotropic conductive film is placed on a region of the circuit board 3 where the semiconductor element 1 is mounted. Then, heating and pressurization is performed using a sticking tool having a built-in cartridge heater, and the sticking is performed on the circuit board 3. The mounting area includes the circuit electrodes 4 formed on the circuit board 3. In the heating operation at this time, a temperature that does not cause a curing reaction with respect to the sealing resin 5 and causes a softening and facilitates attachment to the circuit board 3 is required, and the temperature is usually 60 to 100 ° C. Is done.
【０００４】次に図１１に示すように、セパレーターと
呼ばれる封止樹脂５上のフィルムをはがし、回路基板３
上の回路電極４とバンプ２とが接するように位置合わせ
して、カートリッジヒータ７を内蔵したマウントツール
６により、半導体素子１を回路基板３へ押圧しながら封
止樹脂５の加熱を行い、封止樹脂５の硬化反応を起こさ
せて、半導体素子１と回路基板３とを圧着する。このと
きの圧着条件は、通常、１８０〜２４０℃、８〜３０ｓ
ｅｃで行う。以上の工程を行うことにより、半導体素子
の回路基板への実装を容易、かつ短時間に行えるように
なってきた。Next, as shown in FIG. 11, the film on the sealing resin 5 called a separator is peeled off, and the circuit board 3 is removed.
The upper circuit electrode 4 and the bump 2 are aligned so that they come into contact with each other, and the mounting tool 6 having the built-in cartridge heater 7 presses the semiconductor element 1 against the circuit board 3 to heat the sealing resin 5 and seal the resin. The curing reaction of the stop resin 5 is caused, and the semiconductor element 1 and the circuit board 3 are pressure bonded. The pressure bonding conditions at this time are usually 180 to 240 ° C. and 8 to 30 seconds.
ec. By performing the above steps, the mounting of the semiconductor element on the circuit board can be easily performed in a short time.
【０００５】[0005]
【発明が解決しようとする課題】電気製品の小型化を実
現するために、上述したフリップチップ実装が提案され
実用化されているが、以下のような問題点を生じてい
る。一般に、半導体素子１の回路基板３への圧接工法に
おいては、半導体素子１と回路基板３との間に設けられ
る封止樹脂の加熱による硬化、及び、加圧による半導体
素子１のバンプ２と上記回路電極４との接触を同時に行
うために、回路基板３に対する半導体素子１の接合高
さ、換言すると回路基板３と半導体素子１との隙間寸法
は、上記封止樹脂の硬化速度と、半導体素子１及び回路
基板３の実装動作に関する速度との両方に依存する。よ
って、上記封止樹脂のロット毎、上記封止樹脂の常温で
の保管等の生産履歴により、それぞれの上記封止樹脂毎
にその硬化反応速度が異なると、半導体素子１の上記接
合高さが不安定となり、その結果、半導体素子１と回路
基板３との接続信頼性にバラツキを生じるという問題が
ある。The above-mentioned flip chip mounting has been proposed and put to practical use in order to realize the miniaturization of electric products, but the following problems occur. Generally, in the pressure welding method of the semiconductor element 1 to the circuit board 3, the sealing resin provided between the semiconductor element 1 and the circuit board 3 is hardened by heating, and the bump 2 of the semiconductor element 1 and the bump 2 are pressed by pressure. In order to make contact with the circuit electrode 4 at the same time, the joint height of the semiconductor element 1 to the circuit board 3, in other words, the size of the gap between the circuit board 3 and the semiconductor element 1, is determined by the curing speed of the sealing resin and the semiconductor element. 1 and the speed regarding the mounting operation of the circuit board 3. Therefore, if the curing reaction rate differs for each of the sealing resins depending on the lot of the sealing resin, the production history of the sealing resin stored at room temperature, etc., the bonding height of the semiconductor element 1 may be different. There is a problem that it becomes unstable, and as a result, the connection reliability between the semiconductor element 1 and the circuit board 3 varies.
【０００６】又、加熱による上記封止樹脂の硬化動作
と、加圧による上記封止樹脂の半導体素子外部への押し
出し動作とを同時に行うために、圧着時に発生した上記
封止樹脂中の空気塊を半導体素子外部へ押し出す前に、
上記封止樹脂の硬化が始まるので、上記封止樹脂中に空
気塊が残り、上記接続信頼性の低下を及ぼすという問題
もある。又、加熱による上記封止樹脂の硬化、及び、加
圧によるバンプ２と回路電極４との接触を同時に行うた
めに、上記封止樹脂の軟化時に回路電極４に半導体素子
１のバンプ２からの加圧を受け、回路電極４が変形する
という問題もある。加熱による上記封止樹脂の硬化、及
び、加圧によるバンプ２と回路電極４との接触を同時に
行うために、上記封止樹脂の軟化により、回路基板３の
寸法が伸び、バンプ２のピッチと回路電極４のピッチと
が合わなくなり、接続が困難になるという問題もある。Further, in order to simultaneously perform the curing operation of the sealing resin by heating and the pushing operation of the sealing resin to the outside of the semiconductor element by pressurization, air lumps in the sealing resin generated at the time of pressure bonding are generated. Before pushing out to the outside of the semiconductor element,
Since the curing of the encapsulating resin starts, air lumps remain in the encapsulating resin, which causes a problem of deterioration of the connection reliability. Further, since the sealing resin is cured by heating and the bumps 2 and the circuit electrodes 4 are brought into contact with each other at the same time by pressing, the circuit electrodes 4 are removed from the bumps 2 of the semiconductor element 1 when the sealing resin is softened. There is also a problem that the circuit electrode 4 is deformed under the pressure. Since the sealing resin is hardened by heating and the bumps 2 and the circuit electrodes 4 are brought into contact with each other by pressure at the same time, the dimension of the circuit board 3 is increased by the softening of the sealing resin, and the pitch of the bumps 2 is increased. There is also a problem that the pitch of the circuit electrodes 4 does not match and the connection becomes difficult.
【０００７】又、バンプ２及び回路電極４の高さのばら
つきにより、半導体素子１と回路基板３との接続が不安
定になり、接続信頼性の低下を招く場合もある。又、上
述のように上記封止樹脂の加熱は、マウントツール６を
用いて半導体素子１を介して行うが、半導体素子１から
はみ出した封止樹脂への加熱が直接には行われず、樹脂
反応率が上がらない。このため、必要以上の温度及び時
間を要してしまったり、上記接続信頼性の低下を招いた
りする。本発明は、このような問題点を解決するために
なされたもので、例えば半導体素子等の電子部品をバン
プを介して例えば回路基板等の回路形成体へ装着すると
きの、上記電子部品と上記回路形成体との接続信頼性が
従来に比べて高い、電子部品の装着方法、及び該装着方
法が実行される電子部品の装着装置を提供することを目
的とする。Further, the variation in height of the bumps 2 and the circuit electrodes 4 may make the connection between the semiconductor element 1 and the circuit board 3 unstable, leading to a decrease in connection reliability. Further, as described above, the heating of the sealing resin is performed through the semiconductor element 1 using the mount tool 6, but the sealing resin protruding from the semiconductor element 1 is not directly heated, and the resin reaction The rate does not increase. Therefore, the temperature and time more than necessary are required, and the connection reliability is deteriorated. The present invention has been made to solve such problems, and when the electronic component such as a semiconductor element is mounted on a circuit formed body such as a circuit board via a bump, the electronic component and the electronic component An object of the present invention is to provide an electronic component mounting method and a mounting apparatus for electronic components in which the mounting reliability of the electronic component is higher than that in the conventional case.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、本発明は以下のように構成する。即ち、本発明の第
１態様の電子部品装着方法は、電子部品と回路形成体と
を封止樹脂を介在させて装着する電子部品の装着方法で
あって、上記封止樹脂を第１加熱温度に加熱して上記電
子部品と上記回路形成体とを相対的に押圧し、上記電子
部品と上記回路形成体との隙間からの上記封止樹脂の押
し出しを行うとともに上記電子部品の周囲に上記封止樹
脂のフィレットを形成し、次に、上記封止樹脂を第２加
熱温度に加熱して上記封止樹脂の硬化を行い上記電子部
品と上記回路形成体との装着を完了する、ことを特徴と
する。In order to achieve the above object, the present invention is configured as follows. That is, the electronic component mounting method according to the first aspect of the present invention is an electronic component mounting method in which an electronic component and a circuit-formed body are mounted with a sealing resin interposed, and the sealing resin is heated at a first heating temperature. And presses the electronic component and the circuit forming body relatively to each other to extrude the sealing resin from the gap between the electronic component and the circuit forming body and to seal the electronic component around the electronic component. A fillet of a stop resin is formed, and then the sealing resin is heated to a second heating temperature to cure the sealing resin to complete the mounting of the electronic component and the circuit-formed body. And
【０００９】又、上記隙間から上記封止樹脂の押し出し
を行うとき、上記封止樹脂内に存在するボイドの押し出
しも行うようにしてもよい。Further, when the sealing resin is extruded from the gap, the voids existing in the sealing resin may be extruded.
【００１０】又、上記電子部品は部品電極を有し上記回
路形成体は回路電極を有し、上記部品電極と上記回路電
極とを接合しながら上記押し出し及びフィレット形成を
行うようにしてもよい。The electronic component may have a component electrode and the circuit forming body may have a circuit electrode, and the extrusion and fillet formation may be performed while the component electrode and the circuit electrode are joined.
【００１１】又、上記第２加熱温度は、上記第１加熱温
度以上であるようにしてもよい。The second heating temperature may be equal to or higher than the first heating temperature.
【００１２】又、上記第１加熱温度は、５０℃以上１５
０℃以下であり、上記第２加熱温度は１６０℃以上３５
０℃以下であるようにしてもよい。The first heating temperature is 50 ° C. or higher and 15
0 ° C or lower, and the second heating temperature is 160 ° C or higher and 35
The temperature may be 0 ° C. or lower.
【００１３】又、上記第１加熱温度は、上記回路形成体
のガラス転移温度以下とすることもできる。Further, the first heating temperature can be set to be equal to or lower than the glass transition temperature of the circuit forming body.
【００１４】又、上記第１加熱温度及び上記第２加熱温
度への加熱は、上記電子部品及び上記回路形成体の少な
くとも一方に対する直接加熱、及び上記電子部品及び上
記回路形成体の周囲からの間接加熱により行うようにし
てもよい。Further, the heating to the first heating temperature and the second heating temperature is performed by directly heating at least one of the electronic component and the circuit forming body, and indirectly from the periphery of the electronic component and the circuit forming body. It may be performed by heating.
【００１５】又、本発明の第２態様の電子部品装着装置
は、電子部品と回路形成体とを封止樹脂を介在させて装
着する電子部品の装着装置であって、上記電子部品と上
記回路形成体とを相対的に押圧して、上記電子部品と上
記回路形成体との隙間からの上記封止樹脂の押し出しを
行うとともに上記電子部品の周囲に上記封止樹脂のフィ
レットを形成する押圧装置と、上記封止樹脂の押し出し
及び上記フィレットの形成を行うときには、上記封止樹
脂を第１加熱温度に加熱し、上記封止樹脂の硬化を行う
ときには上記封止樹脂を第２加熱温度に加熱する加熱装
置と、上記加熱装置の温度制御を行う制御装置と、を備
えたことを特徴とする。An electronic component mounting apparatus according to a second aspect of the present invention is an electronic component mounting apparatus for mounting an electronic component and a circuit-formed body with a sealing resin interposed therebetween, wherein the electronic component and the circuit are mounted. A pressing device that relatively presses the forming body to extrude the sealing resin from the gap between the electronic component and the circuit forming body and forms a fillet of the sealing resin around the electronic component. And when the sealing resin is extruded and the fillet is formed, the sealing resin is heated to a first heating temperature, and when the sealing resin is cured, the sealing resin is heated to a second heating temperature. And a control device for controlling the temperature of the heating device.
【００１６】又、上記第２態様において、上記押圧装置
は、上記隙間からの上記封止樹脂の押し出し及び上記封
止樹脂内に存在するボイドの押し出しを行い、上記加熱
装置は、上記封止樹脂及び上記ボイドの押し出し、並び
に上記フィレットの形成を行うときには、上記封止樹脂
を第１加熱温度に加熱するように構成することもでき
る。Further, in the second aspect, the pressing device pushes out the sealing resin from the gap and pushes out voids existing in the sealing resin, and the heating device pushes the sealing resin. Also, when the void is extruded and the fillet is formed, the sealing resin may be heated to the first heating temperature.
【００１７】又、上記第２態様において、上記電子部品
は部品電極を有し上記回路形成体は回路電極を有し、上
記押圧装置は、上記部品電極と上記回路電極とを接合し
ながら上記押し出し及び上記フィレット形成を行うよう
に構成することもできる。Further, in the second aspect, the electronic component has a component electrode, the circuit forming body has a circuit electrode, and the pressing device pushes out the component electrode and the circuit electrode while joining them. Also, the fillet formation can be performed.
【００１８】又、上記第２態様において、上記第２加熱
温度は、上記第１加熱温度以上であるようにしてもよ
い。In the second aspect, the second heating temperature may be equal to or higher than the first heating temperature.
【００１９】又、上記第２態様において、上記第１加熱
温度は、５０℃以上１５０℃以下であり、上記第２加熱
温度は１６０℃以上３５０℃以下であるようにしてもよ
い。In the second aspect, the first heating temperature may be 50 ° C. or higher and 150 ° C. or lower, and the second heating temperature may be 160 ° C. or higher and 350 ° C. or lower.
【００２０】又、上記第２態様において、上記制御装置
は、上記加熱装置に対して上記第１加熱温度を上記回路
形成体のガラス転移温度以下に制御するようにしてもよ
い。In the second aspect, the control device may control the heating device so that the first heating temperature is equal to or lower than the glass transition temperature of the circuit forming body.
【００２１】又、上記第２態様において、上記電子部品
は配列ピッチにて配列されている部品電極を有し、上記
回路形成体は上記部品電極と電気的に接続される回路電
極を有するとき、上記回路電極の形成ピッチは、α×
（Ｔ２−Ｔｒ）×Ｐ２にて求まる値にて補正された寸法
である、ここで、α：上記回路形成体の熱膨張係数、Ｔ
２：上記第２加熱温度、Ｔｒ：室温、Ｐ２：上記回路電
極の形成ピッチとすることができる。In the second aspect, when the electronic component has component electrodes arranged at an arrangement pitch, and the circuit forming body has circuit electrodes electrically connected to the component electrodes, The formation pitch of the circuit electrodes is α ×
It is a dimension corrected by a value obtained by (T2-Tr) × P2, where α is the coefficient of thermal expansion of the circuit-formed body, T
2: The second heating temperature, Tr: room temperature, P2: the formation pitch of the circuit electrodes.
【００２２】又、上記第２態様において、上記加熱装置
は、上記押圧装置に設けられ上記電子部品及び上記回路
形成体の少なくとも一方を直接的に加熱する第１加熱部
と、上記電子部品及び上記回路形成体の周囲に設けられ
上記封止樹脂を間接的に加熱する第２加熱部とを有する
ように構成してもよい。Further, in the second aspect, the heating device includes a first heating portion which is provided in the pressing device and which directly heats at least one of the electronic component and the circuit forming body, the electronic component and the electronic component. A second heating unit that is provided around the circuit forming body and indirectly heats the sealing resin may be provided.
【００２３】又、上記第２態様において、上記回路形成
体は回路基板であり、上記押圧装置は、上記回路基板を
載置して保持する載置部材と、上記電子部品を保持する
部品保持部材と、上記部品保持部材を上記載置部材側へ
移動させて上記電子部品を上記回路基板へ押下する移動
装置とを有するとき、上記載置部材と上記回路基板との
間に敷設され、上記電子部品の部品電極及び上記回路基
板の回路電極の少なくとも一方における高さのバラツキ
を補償して上記部品電極と上記回路電極とを確実に接続
する、弾性材料にてなる高さ調整用シートを有するよう
に構成してもよい。In the second aspect, the circuit forming body is a circuit board, and the pressing device includes a mounting member for mounting and holding the circuit board and a component holding member for holding the electronic component. And a moving device that moves the component holding member to the placement member side to press the electronic component onto the circuit board, the electronic component is laid between the placement member and the circuit board, A height adjusting sheet made of an elastic material for compensating the height variation in at least one of the component electrode of the component and the circuit electrode of the circuit board to securely connect the component electrode and the circuit electrode. You may comprise.
【００２４】[0024]
【発明の実施の形態】本発明の実施形態である、電子部
品装着方法及び該装着方法を実行する電子部品装着装置
について、図を参照しながら以下に説明する。尚、各図
において同じ構成部分については同じ符号を付してい
る。又、この明細書で回路形成体とは、樹脂基板、紙−
フェノール基板、セラミック基板、ガラス・エポキシ
（ガラエポ）基板、フィルム基板等の回路基板、単層基
板若しくは多層基板などの回路基板、部品、筐体、又
は、フレーム等、回路が形成されている対象物を意味す
る。以下の実施形態では上記回路基板を例に採る。又、
電子部品の一例として以下の実施形態では、半導体ウエ
ハより切り出した半導体素子を例に採るが、これに限定
されるものではない。BEST MODE FOR CARRYING OUT THE INVENTION An electronic component mounting method and an electronic component mounting apparatus for executing the mounting method, which are embodiments of the present invention, will be described below with reference to the drawings. In each figure, the same components are designated by the same reference numerals. In addition, in this specification, a circuit-formed body means a resin substrate, paper-
Circuit board such as phenol board, ceramic board, glass epoxy (glass epoxy) board, circuit board such as film board, circuit board such as single-layer board or multi-layer board, parts, housing, frame, etc. Means In the following embodiments, the above circuit board is taken as an example. or,
In the following embodiment, a semiconductor element cut out from a semiconductor wafer is taken as an example of an electronic component, but the present invention is not limited to this.
【００２５】第１実施形態；図２に示すように、本実施
形態の電子部品装着装置１０１は、半導体素子１と回路
基板３とを封止樹脂１０５を介在させて装着する装置で
あり、押圧装置１１０と、加熱装置１２０と、制御装置
１８０とを備える。上記押圧装置１１０は、上記封止樹
脂１０５を第１加熱温度Ｔ１に加熱して半導体素子１と
回路基板３とを相対的に押圧し、半導体素子１と回路基
板３との隙間１０６からの上記封止樹脂１０５の押し出
しを行うとともに上記半導体素子１の周囲に封止樹脂１
０５のフィレット１０８を形成する装置であり、さら
に、上記隙間１０６からの上記封止樹脂１０５の押し出
しを行うときに封止樹脂１０５内に存在するボイド１０
７の押し出しを行うこともできる。このような押圧装置
１１０は、上記回路基板３を載置して保持する載置部材
１１１と、上記半導体素子１を保持する部品保持部材１
１２と、該部品保持部材１１２を上記載置部材１１１側
へ移動させて半導体素子１を回路基板３へ押下する移動
装置１１３とを有する。本実施形態では、上記部品保持
部材１１２は、吸着により半導体素子１を保持すること
から、該部品保持部材１１２には、吸着用の吸引装置１
１４が接続されている。又、上記移動装置１１３及び吸
引装置１１４は、上記制御装置１８０に接続され動作制
御される。又、本実施形態では、上述のように、移動装
置１１３にて部品保持部材１１２を移動させて押圧動作
を行っているが、該形態に限定されるものではない。要
するに載置部材１１１及び部品保持部材１１２、つまり
回路基板３及び半導体素子１を相対的に移動させて上記
押圧動作を行えば良い。First Embodiment: As shown in FIG. 2, an electronic component mounting apparatus 101 of the present embodiment is a apparatus for mounting the semiconductor element 1 and the circuit board 3 with a sealing resin 105 interposed therebetween. The device 110, the heating device 120, and the control device 180 are provided. The pressing device 110 heats the sealing resin 105 to the first heating temperature T1 to relatively press the semiconductor element 1 and the circuit board 3, and the gap 106 between the semiconductor element 1 and the circuit board 3 is pressed. The sealing resin 105 is extruded and the sealing resin 1 is provided around the semiconductor element 1.
And a void 10 existing in the sealing resin 105 when the sealing resin 105 is extruded from the gap 106.
It is also possible to extrude 7. Such a pressing device 110 includes a mounting member 111 for mounting and holding the circuit board 3 and a component holding member 1 for holding the semiconductor element 1.
12 and a moving device 113 that moves the component holding member 112 to the mounting member 111 side and presses the semiconductor element 1 onto the circuit board 3. In the present embodiment, since the component holding member 112 holds the semiconductor element 1 by suction, the component holding member 112 has the suction device 1 for suction.
14 is connected. The moving device 113 and the suction device 114 are connected to the control device 180 and their operations are controlled. Further, in the present embodiment, as described above, the component holding member 112 is moved by the moving device 113 to perform the pressing operation, but the present invention is not limited to this form. In short, the mounting member 111 and the component holding member 112, that is, the circuit board 3 and the semiconductor element 1 may be relatively moved to perform the pressing operation.
【００２６】上記加熱装置１２０は、上記隙間１０６か
らの封止樹脂１０５の押し出し及び封止樹脂１０５内か
らの上記ボイド１０７の押し出し、並びに上記フィレッ
ト１０８の形成を行うときには、封止樹脂１０５を第１
加熱温度Ｔ１に加熱し、封止樹脂１０５の硬化を行うと
きには封止樹脂１０５を第２加熱温度Ｔ２に加熱を行う
装置である。このような加熱装置１２０は、上記押圧装
置１１０に設けられ半導体素子１及び回路基板３の少な
くとも一方を直接的に加熱する第１加熱部１２１を備
え、さらに、図３に示すように、上記半導体素子１及び
上記回路基板３の周囲に設けられ上記封止樹脂１０５を
間接的に加熱する第２加熱部１２２を有するのが好まし
い。又、本実施形態では、図２に示すように、上記第１
加熱部１２１として、上記部品保持部材１１２内に設け
た保持部材用ヒータ１２１−１と、上記載置部材１１１
内に設けた載置部材用ヒータ１２１−２とを設ける。こ
れらの保持部材用ヒータ１２１−１及び載置部材用ヒー
タ１２１−２は、制御装置１８０にて動作制御される電
源部１２３に接続される。尚、部品保持部材１１２及び
載置部材１１１の両方にヒータを設ける必要はなく、少
なくとも一方に設ければよい。When the heating device 120 pushes out the sealing resin 105 from the gap 106, pushes out the voids 107 from the sealing resin 105, and forms the fillet 108, the heating device 120 first removes the sealing resin 105. 1
It is an apparatus that heats the sealing resin 105 to the second heating temperature T2 when the sealing resin 105 is heated to the heating temperature T1 and cured. The heating device 120 includes a first heating unit 121 that is provided in the pressing device 110 and that directly heats at least one of the semiconductor element 1 and the circuit board 3. Further, as shown in FIG. It is preferable to have a second heating portion 122 that is provided around the element 1 and the circuit board 3 and indirectly heats the sealing resin 105. Further, in the present embodiment, as shown in FIG.
As the heating unit 121, a holding member heater 121-1 provided in the component holding member 112 and the mounting member 111 described above.
The mounting member heater 121-2 provided therein is provided. The holding member heater 121-1 and the mounting member heater 121-2 are connected to the power supply unit 123 whose operation is controlled by the controller 180. It should be noted that it is not necessary to provide the heaters on both the component holding member 112 and the mounting member 111, but it is sufficient to provide the heaters on at least one of them.
【００２７】上記第２加熱部１２２としては、本実施形
態では、制御装置１８０にて動作制御される熱風発生装
置１２４を有し、熱風により封止樹脂１０５の加熱を行
うが、第２加熱部１２２の加熱形態はこれに限定される
ものではない。例えば、赤外線、紫外線、レーザ光等の
手段で、これらの少なくとも一つによる加熱形態を採る
ことができる。In the present embodiment, the second heating unit 122 has a hot air generator 124 whose operation is controlled by the controller 180, and heats the sealing resin 105 with hot air. The heating mode of 122 is not limited to this. For example, a heating mode by at least one of these can be adopted by means of infrared rays, ultraviolet rays, laser light or the like.
【００２８】上記第１加熱温度Ｔ１は、本実施形態で
は、上記第２加熱温度Ｔ２以下であって５０℃以上１５
０℃以下であり、第２加熱温度Ｔ２は１６０℃以上３５
０℃以下である。上記封止樹脂１０５がこのような温度
になるように、上記制御装置１８０は、上記加熱装置１
２０の動作制御を行うとともに、上記移動装置１１３の
動作制御を行う。上記第１加熱温度Ｔ１の５０℃以上１
５０℃以下の温度範囲は、封止樹脂１０５が軟化、つま
り低粘度化する領域であり、この温度を超えると封止樹
脂１０５の反応つまり硬化が開始する。又、上記第２加
熱温度Ｔ２の１６０℃以上３５０℃以下の温度範囲は、
封止樹脂１０５が硬化する領域であり、この温度を超え
ると封止樹脂１０５の分解が始まる。尚、詳しい制御動
作の説明は、後述する、装着方法の説明にて行う。In the present embodiment, the first heating temperature T1 is not higher than the second heating temperature T2 and is not lower than 50.degree.
0 ° C or lower, and the second heating temperature T2 is 160 ° C or higher and 35
It is 0 ° C or lower. The control device 180 controls the heating device 1 so that the sealing resin 105 has such a temperature.
20 while controlling the operation of the moving device 113. 50 ° C. or higher of the first heating temperature T1 1
The temperature range of 50 ° C. or lower is a region where the sealing resin 105 softens, that is, has a low viscosity, and when the temperature exceeds this temperature, the reaction or curing of the sealing resin 105 starts. Further, the temperature range of the second heating temperature T2 of 160 ° C. or higher and 350 ° C. or lower is
This is a region where the sealing resin 105 hardens, and when the temperature exceeds this temperature, the sealing resin 105 begins to decompose. The detailed control operation will be described later in the description of the mounting method.
【００２９】又、図４に示すように、半導体素子１の部
品電極１ａ上にはバンプ２が形成される。さらに、上記
半導体素子１が装着される回路基板３上には、上記バン
プ２に対応するように回路電極４が形成される。例えば
バンプ２の配列ピッチＰ１が８０μｍであるとき、熱変
形が生じ難い回路基板３の場合では回路電極４の形成ピ
ッチＰ２も上記配列ピッチＰ１に対応して８０μｍでよ
い。一方、例えば回路基板３が例えば厚み２５μｍのポ
リイミドを基材としたフレキシブル基板であるときに
は、回路電極４は、銅電極上に金メッキを施して上記ポ
リイミド上に形成されるが、上述の第１及び第２の加熱
温度によりポリイミド基材は熱変形を生じる。半導体素
子１と回路基板３との接続は、加熱状態にて行われるた
め、回路電極４の形成ピッチＰ２は、加熱状態にて半導
体素子１のバンプ２の配列ピッチＰ１と一致する必要が
あり、回路基板３の熱膨張分を予め含めて求める必要が
ある。Further, as shown in FIG. 4, bumps 2 are formed on the component electrodes 1a of the semiconductor element 1. Further, a circuit electrode 4 is formed on the circuit board 3 on which the semiconductor element 1 is mounted so as to correspond to the bump 2. For example, when the array pitch P1 of the bumps 2 is 80 μm, the formation pitch P2 of the circuit electrodes 4 may be 80 μm corresponding to the array pitch P1 in the case of the circuit board 3 in which thermal deformation does not easily occur. On the other hand, when the circuit board 3 is, for example, a flexible substrate having a thickness of 25 μm and made of polyimide as a base material, the circuit electrode 4 is formed on the polyimide by plating the copper electrode with gold. The second heating temperature causes thermal deformation of the polyimide base material. Since the semiconductor element 1 and the circuit board 3 are connected in a heated state, the formation pitch P2 of the circuit electrodes 4 needs to match the arrangement pitch P1 of the bumps 2 of the semiconductor element 1 in the heated state. It is necessary to include the thermal expansion amount of the circuit board 3 in advance.
【００３０】即ち、上記回路電極４の形成ピッチＰ２
は、α×（Ｔ２−Ｔｒ）×Ｐ２ にて求まる値にて補正
される。ここで、α：回路基板３の熱膨張係数、Ｔ２：
上記第２加熱温度、Ｔｒ：室温である。例えば、回路基
板３の熱膨張係数が１２ｐｐｍ／℃で、上記第２加熱温
度が２５０℃、室温が２５℃、補正前の形成ピッチＰ２
が８０μｍである場合、上記形成ピッチＰ２の補正値
は、１２×（２５０−２５）×８０＝２．１６μｍとな
る。よって、上記形成ピッチＰ２を８０μｍではなく、
回路基板３の熱膨張分を見込んで（８０−２．１６）μ
ｍとして回路電極４を形成して回路基板３を作製する。
このように上記形成ピッチＰ２を補正することで、図５
に示すように加熱前の状態では、半導体素子１のバンプ
２と、回路基板３の回路電極４とは位置ずれの状態であ
るが、上記第１及び第２加熱温度による加熱により、回
路基板３が膨張し、図６に示すようにバンプ２と回路電
極４との位置は一致するようになる。That is, the formation pitch P2 of the circuit electrodes 4
Is corrected by the value obtained by α × (T2-Tr) × P2. Here, α: thermal expansion coefficient of the circuit board 3, T2:
The second heating temperature is Tr: room temperature. For example, the thermal expansion coefficient of the circuit board 3 is 12 ppm / ° C., the second heating temperature is 250 ° C., the room temperature is 25 ° C., and the formation pitch P2 before correction is
Is 80 μm, the correction value of the formation pitch P2 is 12 × (250-25) × 80 = 2.16 μm. Therefore, the formation pitch P2 is not 80 μm,
Expect the thermal expansion of the circuit board 3 (80-2.16) μ
The circuit electrode 4 is formed as m to fabricate the circuit board 3.
By correcting the formation pitch P2 in this manner, as shown in FIG.
As shown in FIG. 4, the bumps 2 of the semiconductor element 1 and the circuit electrodes 4 of the circuit board 3 are in a state of misalignment in the state before heating. However, the circuit board 3 is heated by the first and second heating temperatures. Expand, and the bumps 2 and the circuit electrodes 4 come to coincide in position as shown in FIG.
【００３１】以上のように構成される部品装着装置１０
１にて行われる、部品装着方法について、以下に説明す
る。尚、使用した半導体素子１について、サイズは１０
×４ｍｍ、厚みは０．４ｍｍ、上記部品電極１ａの最小
ピッチは６０μｍ、部品電極１ａ上にメッキにより金バ
ンプ２を形成している。バンプサイズは３５×７０μ
ｍ、バンプ２の高さは２０μｍである。又、半導体素子
１における上述の各値は、一例でありこれに限定される
ものではない。回路基板３は、ガラスエポキシ製(ＮＥ
Ｃ製、ＦＲ−５)である。又、回路基板３上には、厚み
６０μｍのエポキシ樹脂を主成分とする封止樹脂１０５
のペースト（東芝ケミカル製、ＸＮＰ−０３００）を半
導体素子実装領域にディスペンスにより塗布した。この
ときの塗布条件として、該回路基板３を載置しているス
テージの温度は６０℃、封止樹脂１０５の温度は４５℃
とした。The component mounting apparatus 10 configured as described above
The component mounting method performed in 1 will be described below. The size of the used semiconductor element 1 is 10
× 4 mm, thickness 0.4 mm, minimum pitch of the component electrodes 1a is 60 μm, and gold bumps 2 are formed on the component electrodes 1a by plating. Bump size is 35 × 70μ
m, and the height of the bump 2 is 20 μm. Further, the above-mentioned values in the semiconductor element 1 are merely examples, and the present invention is not limited to these. The circuit board 3 is made of glass epoxy (NE
FR-5) manufactured by C. Further, on the circuit board 3, a sealing resin 105 having a thickness of 60 μm and containing epoxy resin as a main component is formed.
The paste (XNP-0300 manufactured by Toshiba Chemical Co., Ltd.) was applied to the semiconductor element mounting area by dispensing. As the coating conditions at this time, the temperature of the stage on which the circuit board 3 is placed is 60 ° C., and the temperature of the sealing resin 105 is 45 ° C.
And
【００３２】上述の条件の下、部品装着動作を実行す
る。尚、該部品装着動作は、上記制御装置１８０にて動
作制御されて実行される。まず、封止樹脂１０５が塗布
されている回路基板３上の回路電極４と、半導体素子１
に形成したバンプ２とが接するように位置合わせして回
路基板３上に半導体素子１を装着する。該装着を行うと
き、図１に示すように第１圧着工程では、回路基板３を
保持する上記載置部材１１１の温度を載置部材用ヒータ
１２１−２にて約８０℃に加熱にして回路基板３を加熱
する。一方、セラミックヒータにてなる保持部材用ヒー
タ１２１−１を内蔵した部品保持部材１１２にて半導体
素子１を保持して半導体素子１を加熱し、上記封止樹脂
１０５を上記第１加熱温度Ｔ１としての一例である約１
００℃に加熱する。さらに該第１圧着工程では、１バン
プ当たり約４０グラムの荷重がかかるように制御装置１
８０は、移動装置１１３を制御する。よって、該第１圧
着工程にて、上記封止樹脂１０５を回路基板３と半導体
素子１との隙間１０６から該隙間１０６の外部へ押し出
すとともに、封止樹脂１０５中に存在するボイド１０７
を封止樹脂１０５から押し出し、さらに、半導体素子１
の周辺部にフィレット１０８の形成を行う。The component mounting operation is executed under the above conditions. The component mounting operation is controlled and executed by the control device 180. First, the circuit electrode 4 on the circuit board 3 coated with the sealing resin 105 and the semiconductor element 1
The semiconductor element 1 is mounted on the circuit board 3 in such a manner that the bumps 2 formed in the above are in contact with each other. When the mounting is performed, as shown in FIG. 1, in the first pressure bonding step, the temperature of the mounting member 111 holding the circuit board 3 is heated to about 80 ° C. by the mounting member heater 121-2, and the circuit is heated. The substrate 3 is heated. On the other hand, the semiconductor element 1 is held and heated by the component holding member 112 having the holding member heater 121-1 made of a ceramic heater, and the sealing resin 105 is set to the first heating temperature T1. An example of about 1
Heat to 00 ° C. Further, in the first pressure bonding step, the control device 1 is applied so that a load of about 40 grams is applied to each bump.
80 controls the moving device 113. Therefore, in the first pressure-bonding step, the sealing resin 105 is pushed out of the gap 106 between the circuit board 3 and the semiconductor element 1 to the outside of the gap 106, and the void 107 existing in the sealing resin 105.
Is extruded from the sealing resin 105, and further, the semiconductor element 1
The fillet 108 is formed in the peripheral portion of.
【００３３】その後の第２圧着工程では、制御装置１８
０は、封止樹脂１０５が上記第２加熱温度としての一例
である約２６０℃になるように加熱装置１２０を制御
し、かつ１バンプ当たり約１０グラムの荷重がかかるよ
うに移動装置１１３を制御する。よって、第２圧着工程
にて封止樹脂１０５の硬化を実施する。尚、該第２圧着
工程は、図示するように約５秒行われる。このように、
封止樹脂１０５の押し出し工程と、樹脂硬化工程とを分
けることにより、回路基板３に対する半導体素子１の接
続高さの一定化、樹脂中のボイド１０７の軽減を実現
し、さらには上記フィレット１０８の形状を安定化させ
ることができ、回路基板３と半導体素子１との接続信頼
性を向上させることができる。In the subsequent second crimping step, the controller 18
0 controls the heating device 120 so that the sealing resin 105 is about 260 ° C., which is an example of the second heating temperature, and controls the moving device 113 so that a load of about 10 grams per bump is applied. To do. Therefore, the sealing resin 105 is cured in the second pressure bonding step. The second pressure bonding step is performed for about 5 seconds as shown in the figure. in this way,
By separating the step of pushing out the sealing resin 105 and the step of hardening the resin, the connection height of the semiconductor element 1 to the circuit board 3 is made constant, and the voids 107 in the resin are reduced, and further, the fillet 108 The shape can be stabilized, and the connection reliability between the circuit board 3 and the semiconductor element 1 can be improved.
【００３４】本実施形態の場合、回路基板３はガラスエ
ポキシ樹脂を含んでいるので、上記第１加熱温度Ｔ１
を、回路基板３のガラス転移温度Ｔｇ以下の温度に設定
するのが好ましい。このような温度設定とすることで、
半導体素子１を回路基板３に載置し加熱、加圧する上記
第１圧着工程においても、第１加熱温度Ｔ１による回路
基板３の軟化を軽減することができる。勿論、第１加熱
温度Ｔ１を超える第２加熱温度においても上記軟化を軽
減可能とする。よって、回路電極４の変形を防止しなが
ら、上記第２圧着工程での封止樹脂１０５の硬化を完全
ならしめることができる。したがって、半導体素子１と
回路基板３との接続信頼性を向上させることができる。In the case of this embodiment, since the circuit board 3 contains the glass epoxy resin, the first heating temperature T1
Is preferably set to a temperature not higher than the glass transition temperature Tg of the circuit board 3. By setting the temperature like this,
Even in the first pressure bonding step in which the semiconductor element 1 is placed on the circuit board 3 and heated and pressed, softening of the circuit board 3 due to the first heating temperature T1 can be reduced. Of course, the softening can be reduced even at the second heating temperature exceeding the first heating temperature T1. Therefore, it is possible to completely cure the sealing resin 105 in the second pressure-bonding step while preventing the deformation of the circuit electrode 4. Therefore, the connection reliability between the semiconductor element 1 and the circuit board 3 can be improved.
【００３５】上述の説明では、ガラスエポキシ樹脂製の
回路基板３を例に採っているが、上述した、ポリイミド
を基材としたフレキシブルな回路基板３を用いることも
できる。このようなフレキシブル基板の場合でも、上述
したように第１加熱温度Ｔ１による第１圧着工程、及び
第２加熱温度Ｔ２による第２圧着工程を実施することが
できる。但し、上述したように、上記フレキシブル基板
上への回路電極４の形成ピッチＰ２は、上述の計算式に
よる、補正された値を用いる。したがって、上記第１加
熱温度Ｔ１及び第２加熱温度Ｔ２による加熱により上記
フレキシブル基板が膨張した状態で、半導体素子１のバ
ンプ２と上記回路電極４との配列を一致させることがで
き、接合品質の向上を図ることができる。In the above description, the circuit board 3 made of glass epoxy resin is taken as an example, but the flexible circuit board 3 made of polyimide as a base material may be used. Even in the case of such a flexible substrate, the first pressure bonding step at the first heating temperature T1 and the second pressure bonding step at the second heating temperature T2 can be performed as described above. However, as described above, the formation pitch P2 of the circuit electrodes 4 on the flexible substrate uses a value corrected by the above-described calculation formula. Therefore, the bumps 2 of the semiconductor element 1 and the circuit electrodes 4 can be arranged in the same arrangement when the flexible substrate is expanded by the heating by the first heating temperature T1 and the second heating temperature T2, and the bonding quality can be improved. It is possible to improve.
【００３６】又、ガラスエポキシ樹脂製及びポリイミド
製のいずれの回路基板３の場合においても、上記第１圧
着工程及び第２圧着工程において、図３に示すように、
第２加熱部１２２による加熱を追加することもできる。
このように第２加熱部１２２による加熱を行うことで、
封止樹脂１０５の特に表面部分、つまり封止樹脂１０５
が外気にさらされている部分である、特にフィレット１
０８部分の硬化を促進することができる。よって、接合
時間を短縮でき、かつ、環境試験に対する接合信頼性を
向上させることができる。Further, in the case of either the circuit board 3 made of glass epoxy resin or polyimide, as shown in FIG. 3, in the first crimping step and the second crimping step, as shown in FIG.
The heating by the second heating unit 122 can be added.
By performing heating by the second heating unit 122 in this way,
Particularly the surface portion of the sealing resin 105, that is, the sealing resin 105.
Is the part exposed to the atmosphere, especially fillet 1
The curing of the 08 part can be promoted. Therefore, the joining time can be shortened and the joining reliability for the environmental test can be improved.
【００３７】第２実施形態；上述した第１実施形態で
は、上記半導体素子１に形成されている各バンプ２の高
さは揃っており、又、回路基板３についても反りやうね
りがなく、各回路電極４の高さも揃っているという前提
の下で説明を行った。しかしながら実際には、特にポリ
イミドを基材としたフレキシブル基板のような場合、そ
の柔軟性や反り、うねりのため図７に示すように、上記
フレキシブル基板に形成されているそれぞれの回路電極
４の高さにはバラツキ１３１が存在する。尚、上記バン
プ２の高さが不揃いである場合も存在する。上記バラツ
キ１３１が存在することで半導体素子１と回路基板３と
の接合不良が生じてしまう。そこで、このような問題点
を解決するため、以下の部品装着装置１０２を構成する
ことができる。Second Embodiment: In the above-described first embodiment, the bumps 2 formed on the semiconductor element 1 have the same height, and the circuit board 3 has no warp or undulation, The description has been given on the assumption that the heights of the circuit electrodes 4 are uniform. However, in practice, especially in the case of a flexible substrate made of polyimide as a base material, due to its flexibility, warpage, and undulation, as shown in FIG. 7, the height of each circuit electrode 4 formed on the flexible substrate is high. There are variations 131. In addition, the height of the bumps 2 may be uneven. Due to the presence of the variation 131, a defective connection between the semiconductor element 1 and the circuit board 3 occurs. Therefore, in order to solve such a problem, the following component mounting apparatus 102 can be configured.
【００３８】上記部品装着装置１０２では、上述の部品
装着装置１０１の構成に加えて図７に示すように、載置
部材１１１と回路基板３との間に敷設され、半導体素子
１の部品電極１ａ及び回路基板３の回路電極４の少なく
とも一方における高さのバラツキを補償して上記部品電
極１ａと上記回路電極４とを確実に接続する、弾性材料
にてなり耐熱性を有する高さ調整用シート１３０を有す
る。尚、本実施形態では、高さ調整用シート１３０は、
シリコーンゴムにてなる。又、本例では、上記第２加熱
温度は２５０℃であり、押圧力は１バンプ当たり５０グ
ラムとした。その他の構成は、部品装着装置１０１に同
じである。In the component mounting apparatus 102, in addition to the configuration of the component mounting apparatus 101 described above, the component electrode 1a of the semiconductor element 1 is laid between the mounting member 111 and the circuit board 3 as shown in FIG. And a height adjusting sheet made of an elastic material and having heat resistance, compensating for height variation in at least one of the circuit electrodes 4 of the circuit board 3 and reliably connecting the component electrode 1a and the circuit electrode 4 to each other. Having 130. In the present embodiment, the height adjusting sheet 130 is
Made of silicone rubber. Further, in this example, the second heating temperature was 250 ° C., and the pressing force was 50 grams per bump. Other configurations are the same as those of the component mounting apparatus 101.
【００３９】載置部材１１１上に上記高さ調整用シート
１３０を敷設することで、例えばそれぞれの上記回路電
極４に上記バラツキ１３１が存在するときでも、上記第
１圧着工程及び第２圧着工程にて、部品保持部材１１２
に保持されている半導体素子１が回路基板３へ押圧され
ることで、図８に示すように、半導体素子１の全ての部
品電極１ａと、回路基板３の全ての回路電極４とを接触
させることができる。即ち、本例では回路基板３はポリ
イミドを基材としたフレキシブル基板であり、上記調整
用シート１３０は弾性部材であることから、半導体素子
１が回路基板３へ押圧されとき、他に比べて高さの大き
い上記回路電極４は、図８に示すように載置部材１１１
側へ沈み込むことができる。よって、回路基板３の反り
やうねり、回路電極４の高さのバラツキ、及び半導体素
子のバンプ２の高さのバラツキの少なくとも一つが存在
する場合であっても、全ての部品電極１ａと全ての回路
電極４とを接触させることができ、半導体素子１と回路
基板３との接合安定性を従来に比べて向上させることが
できる。尚、上述した第２加熱部１２２による加熱動作
を、当該第２実施形態の場合に適用することもできる。By laying the height adjusting sheet 130 on the mounting member 111, for example, even when the variation 131 exists in each of the circuit electrodes 4, the first pressure bonding step and the second pressure bonding step are performed. The component holding member 112
By pressing the semiconductor element 1 held on the circuit board 3 to the circuit board 3, all the component electrodes 1a of the semiconductor element 1 and all the circuit electrodes 4 of the circuit board 3 are brought into contact with each other, as shown in FIG. be able to. That is, in this example, the circuit board 3 is a flexible board using polyimide as a base material, and the adjusting sheet 130 is an elastic member. Therefore, when the semiconductor element 1 is pressed against the circuit board 3, the circuit board 3 is higher than others. As shown in FIG. 8, the circuit electrode 4 having a large thickness is mounted on the mounting member 111.
Can sink to the side. Therefore, even when there is at least one of the warp or undulation of the circuit board 3, the height variation of the circuit electrodes 4, and the height variation of the bumps 2 of the semiconductor element, all the component electrodes 1a and all the component electrodes 1a. The circuit electrodes 4 can be brought into contact with each other, and the bonding stability between the semiconductor element 1 and the circuit board 3 can be improved as compared with the conventional case. The heating operation by the second heating unit 122 described above can also be applied to the case of the second embodiment.
【００４０】上述の実施形態に記載した封止樹脂１０５
は、電子部品１と回路形成体３との間に設けられこれら
の接着を行う接着剤と読み替えることもできる。該接着
剤は、例えば、電子部品１に例えば３０ピン以上の電極
があるような場合に当該電子部品１と回路形成体３との
接続を図るために使用可能である。The sealing resin 105 described in the above embodiment.
Can be read as an adhesive that is provided between the electronic component 1 and the circuit forming body 3 to bond them. The adhesive can be used for connecting the electronic component 1 and the circuit-formed body 3 when the electronic component 1 has, for example, electrodes having 30 pins or more.
【００４１】[0041]
【発明の効果】以上詳述したように本発明の第１態様の
電子部品装着方法、及び第２態様の電子部品装着装置に
よれば、押圧装置、加熱装置、及び制御装置を備え、電
子部品と回路形成体との隙間からの封止樹脂の押し出し
及びフィレット形成を行う工程を行った後、上記封止樹
脂を硬化させる工程を行うようにし、さらにそれぞれの
工程で封止樹脂の加熱温度を変化させた。このようにし
たことで、上記押し出し及びフィレット形成動作は、封
止樹脂の硬化が生じない第１加熱温度にて行うので、従
来のような不具合を発生させない。その後、第２加熱温
度にて上記封止樹脂は硬化されることから、接合された
電子部品と回路形成体との隙間寸法の一定化を図ること
ができる。したがって、電子部品と回路形成体との接続
信頼性を従来に比べて向上させることができる。As described above in detail, according to the electronic component mounting method of the first aspect and the electronic component mounting apparatus of the second aspect of the present invention, the electronic component is equipped with the pressing device, the heating device, and the control device. After performing the step of extruding the sealing resin from the gap between the circuit forming body and the fillet forming step and then performing the step of curing the sealing resin, the heating temperature of the sealing resin is further adjusted in each step. Changed. By doing so, the extrusion and fillet forming operations are performed at the first heating temperature at which the encapsulating resin is not cured, so that the conventional problems do not occur. After that, since the sealing resin is cured at the second heating temperature, it is possible to make the size of the gap between the joined electronic component and the circuit formed body constant. Therefore, the connection reliability between the electronic component and the circuit formed body can be improved as compared with the conventional case.
【００４２】又、上記押し出し動作にてさらに上記封止
樹脂内からボイドを押し出しても良い。こうすることで
さらに上記接続信頼性の向上を図ることができる。Further, voids may be further pushed out of the sealing resin by the pushing operation. By doing so, it is possible to further improve the connection reliability.
【００４３】又、上記第１加熱温度を回路形成体のガラ
ス転移温度以下とすることで、上記押し出し及びフィレ
ット形成動作の際に、回路形成体の軟化、変形等を防止
でき、電子部品と回路形成体との接続信頼性を従来に比
べて向上させることができる。Further, by setting the first heating temperature to be equal to or lower than the glass transition temperature of the circuit forming body, it is possible to prevent the circuit forming body from being softened, deformed or the like during the extrusion and fillet forming operations, and the electronic parts and the circuit. The connection reliability with the formed body can be improved as compared with the conventional one.
【００４４】又、上記回路形成体が加熱により熱膨張す
る基板であるとき、該回路形成体の回路電極の形成ピッ
チ寸法を、上記熱膨張分を予め加味して求めた寸法にす
るようにした。これにより、電子部品との接合の際に上
記回路形成体が加熱されたとき、上記回路電極と電子部
品の部品電極とのピッチは一致し、上記回路電極と上記
部品電極とを位置ずれすることなく接合させることがで
きる。よって、電子部品と回路形成体との接続信頼性を
従来に比べて向上させることができる。Further, when the circuit forming body is a substrate which thermally expands by heating, the formation pitch dimension of the circuit electrodes of the circuit forming body is set to a dimension obtained by previously considering the thermal expansion amount. . Thereby, when the circuit forming body is heated at the time of joining with the electronic component, the pitch of the circuit electrode and the component electrode of the electronic component match, and the circuit electrode and the component electrode are misaligned. Can be joined without. Therefore, the connection reliability between the electronic component and the circuit formed body can be improved as compared with the conventional case.
【００４５】さらに、第１加熱部及び第２加熱部を備
え、上述の加熱を行うようにすることで、例えば上記第
２加熱部にて封止樹脂の表面部分を加熱し硬化させるこ
とができる。よって、封止樹脂の硬化時には、樹脂反応
率を上げより迅速な硬化が行え、電子部品と回路形成体
との接続信頼性を従来に比べて向上させることができ
る。Further, by providing the first heating portion and the second heating portion and performing the above-mentioned heating, for example, the surface portion of the sealing resin can be heated and cured by the second heating portion. . Therefore, at the time of curing the sealing resin, the resin reaction rate can be increased to perform more rapid curing, and the connection reliability between the electronic component and the circuit formed body can be improved as compared with the conventional case.
【００４６】又、載置部材と回路基板との間に、弾性材
料にてなる高さ調整用シートを敷設することで、上記部
品電極及び回路電極の少なくとも一方における高さがば
らついている場合であっても、上記高さ調整用シートに
て上記バラツキを補償することができる。よって、上記
部品電極と上記回路電極とを確実に接続させることがで
き、電子部品と回路形成体との接続信頼性を従来に比べ
て向上させることができる。Further, by laying a height adjusting sheet made of an elastic material between the mounting member and the circuit board, it is possible to prevent the height of at least one of the component electrode and the circuit electrode from varying. Even if there is, the variation can be compensated by the height adjusting sheet. Therefore, the component electrode and the circuit electrode can be reliably connected to each other, and the connection reliability between the electronic component and the circuit formed body can be improved as compared with the conventional case.
【図１】 本発明の実施形態の部品装着方法にて行われ
る加熱及び押圧の変化状態を説明するための図である。FIG. 1 is a diagram for explaining change states of heating and pressing performed in a component mounting method according to an embodiment of the present invention.
【図２】 本発明の実施形態における部品装着装置の構
成を示す図である。FIG. 2 is a diagram showing a configuration of a component mounting device according to an embodiment of the present invention.
【図３】 図２に示す部品装着装置の変形例を示す図で
ある。FIG. 3 is a diagram showing a modified example of the component mounting apparatus shown in FIG.
【図４】 本発明の部品装着方法及び装置にて用いられ
る回路基板の回路電極の形成ピッチの補正の必要性を説
明するための図である。FIG. 4 is a diagram for explaining the necessity of correcting the formation pitch of the circuit electrodes of the circuit board used in the component mounting method and device of the present invention.
【図５】 本発明の部品装着方法及び装置にて用いられ
る回路基板の回路電極の形成ピッチの補正の必要性を説
明するための図である。FIG. 5 is a diagram for explaining the necessity of correcting the formation pitch of the circuit electrodes of the circuit board used in the component mounting method and device of the present invention.
【図６】 本発明の部品装着方法及び装置にて用いられ
る回路基板の回路電極の形成ピッチの補正の必要性を説
明するための図である。FIG. 6 is a diagram for explaining the necessity of correcting the formation pitch of the circuit electrodes of the circuit board used in the component mounting method and device of the present invention.
【図７】 本発明の他の実施形態における部品装着装置
の構成を示す図である。FIG. 7 is a diagram showing a configuration of a component mounting device according to another embodiment of the present invention.
【図８】 図７に示す部品装着装置にて部品装着を行っ
ている状態を示す図である。FIG. 8 is a diagram showing a state where components are being mounted by the component mounting apparatus shown in FIG.
【図９】 バンプを形成した半導体素子を示す図であ
る。FIG. 9 is a diagram showing a semiconductor element having bumps formed thereon.
【図１０】 回路基板上に封止樹脂を設けた状態を示す
図である。FIG. 10 is a diagram showing a state in which a sealing resin is provided on a circuit board.
【図１１】 回路基板上へ半導体素子を装着している状
態を示す図である。FIG. 11 is a diagram showing a state in which a semiconductor element is mounted on a circuit board.
１…電子部品、１ａ…部品電極、３…回路基板、４…回
路電極、１０１…部品装着装置、１０５…封止樹脂、１
０６…隙間、１０７…ボイド、１０８…フィレット、１
１０…押圧装置、１１１…載置部材、１１２…部品保持
部材、１１４…移動装置、１２０…加熱装置、１２１…
第１加熱部、１２２…第２加熱部、１３０…高さ調整用
シート、１８０…制御装置。DESCRIPTION OF SYMBOLS 1 ... Electronic component, 1a ... Component electrode, 3 ... Circuit board, 4 ... Circuit electrode, 101 ... Component mounting device, 105 ... Sealing resin, 1
06 ... gap, 107 ... void, 108 ... fillet, 1
10 ... Pressing device, 111 ... Mounting member, 112 ... Component holding member, 114 ... Moving device, 120 ... Heating device, 121 ...
1st heating part, 122 ... 2nd heating part, 130 ... Height adjustment sheet, 180 ... Control device.
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5E314 AA32 BB06 BB11 CC01 DD06 FF02 FF05 FF06 FF17 FF27 GG11 5E319 AA03 AA07 AB06 AC02 AC03 AC04 AC17 CC12 CD04 GG09 5F044 LL11 RR19 ─────────────────────────────────────────────────── ─── Continued front page F term (reference) 5E314 AA32 BB06 BB11 CC01 DD06 FF02 FF05 FF06 FF17 FF27 GG11 5E319 AA03 AA07 AB06 AC02 AC03 AC04 AC17 CC12 CD04 GG09 5F044 LL11 RR19
Claims (16)
封止樹脂（１０５）を介在させて装着する電子部品の装
着方法であって、 上記封止樹脂を第１加熱温度（Ｔ１）に加熱して上記電
子部品と上記回路形成体とを相対的に押圧し、上記電子
部品と上記回路形成体との隙間（１０６）からの上記封
止樹脂の押し出しを行うとともに上記電子部品の周囲に
上記封止樹脂のフィレット（１０８）を形成し、 次に、上記封止樹脂を第２加熱温度（Ｔ２）に加熱して
上記封止樹脂の硬化を行い上記電子部品と上記回路形成
体との装着を完了する、ことを特徴とする電子部品の装
着方法。1. A method of mounting an electronic component, wherein an electronic component (1) and a circuit-formed body (3) are mounted with a sealing resin (105) interposed, wherein the sealing resin is heated at a first heating temperature ( T1) is heated to relatively press the electronic component and the circuit forming body to push out the sealing resin from the gap (106) between the electronic component and the circuit forming body, and at the same time, the electronic component. A fillet (108) of the encapsulating resin is formed on the periphery of, and then the encapsulating resin is heated to a second heating temperature (T2) to cure the encapsulating resin to form the electronic component and the circuit. A method for mounting an electronic component, characterized in that the mounting on the body is completed.
行うとき、上記封止樹脂内に存在するボイド（１０７）
の押し出しも行う、請求項１記載の電子部品の装着方
法。2. A void (107) existing in the sealing resin when the sealing resin is extruded through the gap.
The method for mounting an electronic component according to claim 1, further comprising:
上記回路形成体は回路電極（４）を有し、上記部品電極
と上記回路電極とを接合しながら上記押し出し及びフィ
レット形成を行う、請求項１又は２記載の電子部品の装
着方法。3. The electronic component has a component electrode (1a), and the circuit forming body has a circuit electrode (4). The extrusion and the fillet formation are performed while the component electrode and the circuit electrode are joined. A method for mounting an electronic component according to claim 1 or 2.
以上である、請求項１から３のいずれかに記載の電子部
品の装着方法。4. The method of mounting an electronic component according to claim 1, wherein the second heating temperature is equal to or higher than the first heating temperature.
℃以下であり、上記第２加熱温度は１６０℃以上３５０
℃以下である、請求項４記載の電子部品の装着方法。5. The first heating temperature is 50 ° C. or higher and 150.
℃ or less, the second heating temperature is 160 ℃ or more 350
The method of mounting an electronic component according to claim 4, wherein the temperature is not higher than ° C.
ガラス転移温度（Ｔｇ）以下である、請求項１から５の
いずれかに記載の電子部品の装着方法。6. The mounting method for an electronic component according to claim 1, wherein the first heating temperature is equal to or lower than the glass transition temperature (Tg) of the circuit forming body.
への加熱は、上記電子部品及び上記回路形成体の少なく
とも一方に対する直接加熱、及び上記電子部品及び上記
回路形成体の周囲からの間接加熱により行う、請求項１
から６のいずれかに記載の電子部品の装着方法。7. The heating to the first heating temperature and the second heating temperature is direct heating to at least one of the electronic component and the circuit forming body, and indirect from surroundings of the electronic component and the circuit forming body. Claim 1 performed by heating
7. The method for mounting an electronic component according to any one of 1 to 6.
封止樹脂（１０５）を介在させて装着する電子部品の装
着装置であって、 上記電子部品と上記回路形成体とを相対的に押圧して、
上記電子部品と上記回路形成体との隙間（１０６）から
の上記封止樹脂の押し出しを行うとともに上記電子部品
の周囲に上記封止樹脂のフィレット（１０８）を形成す
る押圧装置（１１０）と、 上記封止樹脂の押し出し及び上記フィレットの形成を行
うときには、上記封止樹脂を第１加熱温度（Ｔ１）に加
熱し、上記封止樹脂の硬化を行うときには上記封止樹脂
を第２加熱温度（Ｔ２）に加熱する加熱装置（１２０）
と、 上記加熱装置の温度制御を行う制御装置（１８０）と、
を備えたことを特徴とする電子部品の装着装置。8. An electronic component mounting apparatus for mounting an electronic component (1) and a circuit formed body (3) with a sealing resin (105) interposed, wherein the electronic component and the circuit formed body are mounted. Press relatively,
A pressing device (110) for extruding the sealing resin from a gap (106) between the electronic component and the circuit forming body and forming a fillet (108) of the sealing resin around the electronic component. When the sealing resin is extruded and the fillet is formed, the sealing resin is heated to the first heating temperature (T1), and when the sealing resin is cured, the sealing resin is heated to the second heating temperature (T1). Heating device (120) for heating to T2)
A control device (180) for controlling the temperature of the heating device,
An electronic component mounting apparatus comprising:
止樹脂の押し出し及び上記封止樹脂内に存在するボイド
（１０７）の押し出しを行い、上記加熱装置は、上記封
止樹脂及び上記ボイドの押し出し、並びに上記フィレッ
トの形成を行うときには、上記封止樹脂を第１加熱温度
（Ｔ１）に加熱する、請求項８記載の電子部品の装着装
置。9. The pressing device pushes out the sealing resin from the gap and pushes out voids (107) existing in the sealing resin, and the heating device pushes the sealing resin and the voids. 9. The electronic component mounting apparatus according to claim 8, wherein the sealing resin is heated to a first heating temperature (T1) when the extrusion is performed and the fillet is formed.
し上記回路形成体は回路電極（４）を有し、上記押圧装
置は、上記部品電極と上記回路電極とを接合しながら上
記押し出し及び上記フィレット形成を行う、請求項８又
は９記載の電子部品の装着装置。10. The electronic component has a component electrode (1a) and the circuit-formed body has a circuit electrode (4), and the pressing device pushes out the component electrode and the circuit electrode while joining them. The electronic component mounting apparatus according to claim 8 or 9, wherein the fillet formation is performed.
度以上である、請求項８から１０のいずれかに記載の電
子部品の装着装置。11. The electronic component mounting apparatus according to claim 8, wherein the second heating temperature is equal to or higher than the first heating temperature.
０℃以下であり、上記第２加熱温度は１６０℃以上３５
０℃以下である、請求項１１記載の電子部品の装着装
置。12. The first heating temperature is 50 ° C. or higher and 15
0 ° C or lower, and the second heating temperature is 160 ° C or higher and 35
The electronic component mounting apparatus according to claim 11, which has a temperature of 0 ° C. or lower.
て上記第１加熱温度を上記回路形成体のガラス転移温度
（Ｔｇ）以下に制御する、請求項８から１２のいずれか
に記載の電子部品の装着装置。13. The electronic device according to claim 8, wherein the control device controls the first heating temperature of the heating device to be equal to or lower than a glass transition temperature (Tg) of the circuit-forming body. Parts mounting device.
て配列されている部品電極（１ａ）を有し、上記回路形
成体は上記部品電極と電気的に接続される回路電極
（４）を有するとき、上記回路電極の形成ピッチは、 α×（Ｔ２−Ｔｒ）×Ｐ２ にて求まる値にて補正された寸法である、ここで、α：
上記回路形成体の熱膨張係数、Ｔ２：上記第２加熱温
度、Ｔｒ：室温、Ｐ２：上記回路電極の形成ピッチ、で
ある、請求項８から１３のいずれかに記載の電子部品の
装着方法。14. The electronic component has component electrodes (1a) arranged at an arrangement pitch (P1), and the circuit forming body has circuit electrodes (4) electrically connected to the component electrodes. When it has, the formation pitch of the circuit electrodes is a dimension corrected by a value obtained by α × (T2-Tr) × P2, where α:
The electronic component mounting method according to claim 8, wherein the coefficient of thermal expansion of the circuit forming body is T2: the second heating temperature, Tr: room temperature, and P2 is a pitch of forming the circuit electrodes.
られ上記電子部品及び上記回路形成体の少なくとも一方
を直接的に加熱する第１加熱部（１２１）と、上記電子
部品及び上記回路形成体の周囲に設けられ上記封止樹脂
を間接的に加熱する第２加熱部（１２２）とを有する、
請求項８から１４のいずれかに記載の電子部品の装着装
置。15. The heating device includes a first heating part (121) provided in the pressing device for directly heating at least one of the electronic component and the circuit forming body, and the electronic component and the circuit forming body. A second heating part (122) which is provided around and which indirectly heats the sealing resin.
The electronic component mounting apparatus according to claim 8.
記押圧装置は、上記回路基板を載置して保持する載置部
材（１１１）と、上記電子部品を保持する部品保持部材
（１１２）と、上記部品保持部材を上記載置部材側へ移
動させて上記電子部品を上記回路基板へ押下する移動装
置（１１４）とを有するとき、上記載置部材と上記回路
基板との間に敷設され、上記電子部品の部品電極（１
ａ）及び上記回路基板の回路電極（４）の少なくとも一
方における高さのバラツキを補償して上記部品電極と上
記回路電極とを確実に接続する、弾性材料にてなる高さ
調整用シート（１３０）を有する、請求項８から１５の
いずれかに記載の電子部品の装着装置。16. The circuit forming body is a circuit board, and the pressing device includes a mounting member (111) for mounting and holding the circuit board, and a component holding member (112) for holding the electronic component. And a moving device (114) for moving the component holding member to the placement member side to push the electronic component to the circuit board, the device is laid between the placement member and the circuit board. , The component electrode of the electronic component (1
a) and a height adjusting sheet (130) made of an elastic material for compensating the height variation in at least one of the circuit electrode (4) of the circuit board and surely connecting the component electrode and the circuit electrode. The mounting device for electronic components according to claim 8, further comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001326423A JP2003133707A (en) | 2001-10-24 | 2001-10-24 | Method and apparatus for placing electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001326423A JP2003133707A (en) | 2001-10-24 | 2001-10-24 | Method and apparatus for placing electronic component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003133707A true JP2003133707A (en) | 2003-05-09 |
Family
ID=19142809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001326423A Pending JP2003133707A (en) | 2001-10-24 | 2001-10-24 | Method and apparatus for placing electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003133707A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006286798A (en) * | 2005-03-31 | 2006-10-19 | Toray Eng Co Ltd | Mounting method and apparatus |
| JP2008072762A (en) * | 2003-05-29 | 2008-03-27 | Kyocera Corp | Temperature compensated crystal oscillator |
| JP2012160501A (en) * | 2011-01-31 | 2012-08-23 | Sony Chemical & Information Device Corp | Semiconductor manufacturing apparatus, semiconductor manufacturing method and semiconductor device |
| JP2015118998A (en) * | 2013-12-17 | 2015-06-25 | デクセリアルズ株式会社 | Method of manufacturing connection body, connection method, and connection body |
-
2001
- 2001-10-24 JP JP2001326423A patent/JP2003133707A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008072762A (en) * | 2003-05-29 | 2008-03-27 | Kyocera Corp | Temperature compensated crystal oscillator |
| JP2006286798A (en) * | 2005-03-31 | 2006-10-19 | Toray Eng Co Ltd | Mounting method and apparatus |
| JP2012160501A (en) * | 2011-01-31 | 2012-08-23 | Sony Chemical & Information Device Corp | Semiconductor manufacturing apparatus, semiconductor manufacturing method and semiconductor device |
| JP2015118998A (en) * | 2013-12-17 | 2015-06-25 | デクセリアルズ株式会社 | Method of manufacturing connection body, connection method, and connection body |
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