JP3326382B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device having a semiconductor chip mounted on a circuit board.

[0002]

2. Description of the Related Art In recent years, when various semiconductor chips are mounted on a circuit board in a method of manufacturing a semiconductor device, mounting using a bare chip has been performed. Less than,
Two typical methods of manufacturing a conventional semiconductor device will be described with reference to FIGS.

First, an SBB method (stud bump bonding method), which is a typical one of the conventional mounting methods, will be described with reference to FIGS. FIG.
FIG. 2 is a sectional view showing a circuit board on which a semiconductor chip is mounted by the SBB method, that is, a mounting board. 9, reference numeral 100 denotes a semiconductor chip, and 110 denotes a semiconductor chip 10.
0, a bonding pad formed on the main surface of
Is a gold bump formed on the pad 110, 130 is a conductive adhesive formed on the tip of the gold bump 120, 140 is a circuit board, 150 is an electrode formed on the upper surface of the circuit board 140, 160 is a semiconductor chip 100 And an underfill resin provided for fixing the circuit board 140 to the substrate.

A specific mounting method of the SBB method is shown in FIG.
This will be described with reference to (a) to (g). FIG. 10 (a)
(G) is sectional drawing which shows each process of SBB system.

First, as shown in FIG. 10A, pads 110 are formed on the main surfaces of a plurality of chip areas 210 provided on a wafer 200, and each chip area 210 is completed. Next, as shown in FIG. 10B, the wafer 200 is divided by a dicing process, and a plurality of semiconductor chips 100 including the respective chip regions 210 are completed. next,
As shown in FIG. 10C, the divided semiconductor chip 1
On the other hand, an electrode 115 with a projection is formed on the pad 110 by using a gold wire and a general ball bonding wire bonding method. Next, as shown in FIG.
The pad 11 is provided for all the formed protruding electrodes 115.
The gold bumps 120 are formed by performing leveling in order to make the heights from the surface of 0 uniform. Next, FIG.
As shown in (e), leveled gold bump 1
The conductive adhesive 130 is transferred to the tip of the semiconductor chip 100, and the semiconductor chip 100 is held by the crimping tool 300.
The conductive adhesive 130 is cured after the electrode 20 of the circuit board 140 and the electrode 20 of the circuit board 140 are opposed to each other and positioned and pressed down face down. Thereby, the conductive adhesive 130
, The pad 110 and the electrode 150 are electrically connected. Next, as shown in FIG. 10F, the space between the semiconductor chip 100 and the circuit board 140 is filled with the underfill resin 160 using the dispenser 310. Next, as shown in FIG. 10G, the semiconductor chip 100 is adhered and fixed to the circuit board 140 by curing the filled underfill resin 160.

Second, a method for manufacturing a semiconductor device using an anisotropic conductive film, which is another typical conventional method for manufacturing a semiconductor device, will be described with reference to FIGS. FIG. 11 is a cross-sectional view showing a circuit board on which a semiconductor chip is mounted by a method for manufacturing a semiconductor device using an anisotropic conductive film, that is, a mounting board. In FIG. 11, reference numeral 100 denotes a semiconductor chip; 110, bonding pads formed on the main surface of the semiconductor chip 100;
Reference numeral 20 denotes a gold bump formed on the pad 110; 140, a circuit board; 150, an electrode formed on the upper surface of the circuit board 140; 170, an electrical connection between the gold bump 120 and the electrode 150; And an anisotropic conductive film for fixing the substrate and the circuit board 140.

A specific method for mounting a semiconductor chip using an anisotropic conductive film will be described with reference to FIGS. FIGS. 12A to 12F are cross-sectional views showing steps of a mounting method using an anisotropic conductive film.

First, as in the case of the SBB system, FIG.
1A to 1D, the electrode 1 of the semiconductor chip 100
A gold bump 120 is formed on 10. Next, FIG.
As shown in (e), the semiconductor chip 100 is held by the crimping tool 300, and the gold bump 120 and the circuit board 140 are held.
The semiconductor chip 100 is thermocompression-bonded face down to the circuit board 140 via the anisotropic conductive film 170. Here, the anisotropic conductive film 170 is composed of conductive particles and a binder. As the conductive particles, particles made of a metal having a low electric resistance such as silver or nickel, resin particles coated on the surface with such a metal, or the like is used. As the binder, a thermoplastic or thermosetting resin is used. Next, as shown in FIG. 12F, the binder is melted or softened by thermocompression bonding, and the conductive particles are brought into contact with each other only between the gold bump 120 and the electrode 150.
10 and the electrode 150 are electrically connected. Then, the semiconductor chip 100 is adhered and fixed to the circuit board 140 by curing the binder of the anisotropic conductive film 170.

[0009]

However, according to the above-mentioned conventional mounting method, the gold bump 1 which is an essential step
In the leveling process of No. 20, it is difficult to make the heights of the gold bumps 120 uniform at once in the wafer state due to the warpage of the wafer 200 and the lack of mechanical accuracy of the leveling device. Therefore, the gold bumps 120 need to be leveled for each of the semiconductor chips 100 after dicing, so that the throughput of the leveling step is reduced and the manufacturing cost is increased.

In the case of the SBB method, it generally takes about 20 to 90 seconds per chip to fill the underfill resin 160, and it takes time to cure the underfill resin 160. Throughput is further reduced. On the other hand, when the anisotropic conductive film 170 is used, a process of shaping the anisotropic conductive film 170 in advance and installing the anisotropic conductive film 170 at a predetermined location on the circuit board 140 is required, so that the throughput is further reduced. Therefore, these two methods have problems that they are unsuitable for mass production due to low throughput and that the manufacturing cost is high.

According to the present invention, in order to solve the above-mentioned conventional problems, the uniformization of the height of gold bumps and the formation of an adhesive layer for fixing a semiconductor chip to a circuit board are collectively performed in a wafer state. An object of the present invention is to provide a method for manufacturing a semiconductor device which can perform a bare chip on a circuit board with high throughput by performing the method.

In order to achieve the above object, a first method of manufacturing a semiconductor device of the present invention, as described in claim 1, Ri name by mounting a semiconductor chip on a circuit board,
A method of manufacturing a semiconductor device using a stud bump bonding method, ball Bondi on pads which are respectively formed on the main surface of the plurality of chip regions with the wafer
Forming a protruding electrode by using a bonding wire bonding method, and forming at least the protruding electrode on the wafer .
Forming a resin layer to expose the upper portion of the electrode fill between the protruding electrodes having the projection and said resin layer to said resin layer and the upper surface of the protrusion with electrodes <br/> is flush Charging
Polishing a pole to form a bump from the protruding electrode; separating the wafer into a plurality of semiconductor chips by separating the wafer into chip regions ; and forming a bump on the semiconductor chip. And positioning the electrodes on the circuit board so as to face each other, placing the semiconductor chip on the circuit board, and electrically connecting the bumps and the electrodes on the circuit board; It has.

Thus, the projections are collectively formed in the wafer state.
The height of the electrodes is made uniform and the resin layer is formed on the main surface of the semiconductor chip. After dividing the semiconductor chip, the semiconductor chip is mounted face down on the circuit board. Therefore, a semiconductor device can be manufactured with high throughput.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, in the step of electrically connecting, the upper surface of the bump and the electrode on the circuit board are thermocompression bonded. Is formed, the bumps and the electrodes on the circuit board can be electrically connected.

Thus, the height of the bumps is made uniform and the resin layer is formed on the main surface of the semiconductor chip in a batch at the wafer state. After the semiconductor chips are divided, the bumps and the circuit board are surely formed by the alloy layer. To the electrode of Therefore, a semiconductor device can be reliably manufactured with high throughput.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, in the step of electrically connecting, the ultrasonic wave is applied to a contact portion between the upper surface of the bump and the electrode on the circuit board. The alloy layer may be formed by thermocompression while applying the pressure.

In this way, the bump height is made uniform and the resin layer is formed on the main surface of the semiconductor chip in a lump in the wafer state, and after dividing into semiconductor chips, the alloy layer formed with lower thermal energy Thus, the bumps and the electrodes of the circuit board are securely connected. Therefore, a semiconductor device can be manufactured with high throughput and without applying a high temperature.

According to a fourth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, the step of aligning includes the step of forming a conductive material between the bump and the electrode on the circuit board. Further, in the step of electrically connecting,
The conductive material may be cured.

In this way, the height of the bumps is made uniform and the resin layer is formed on the main surface of the semiconductor chip in a lump in the wafer state. The bumps are connected to the electrodes of the circuit board. Therefore, a semiconductor device can be reliably manufactured with high throughput.

According to a fifth aspect of the present invention, in the method of manufacturing a semiconductor device according to the fourth aspect, the conductive material is a conductive adhesive, and in the step of electrically connecting, the upper surface of the bump and the circuit board are electrically connected. The upper electrode may be thermocompression-bonded via a conductive adhesive.

In this way, the heights of the bumps are made uniform and the resin layer is formed on the main surface of the semiconductor chip in a batch at the wafer state, and after dividing into semiconductor chips, the semiconductor chip is mounted face down on the circuit board. At this time, the conductive adhesive is cured to securely connect the bumps to the electrodes of the circuit board. Therefore, a semiconductor device can be reliably manufactured with high throughput.

According to a sixth aspect of the present invention, in the method of manufacturing a semiconductor device according to the fourth aspect, the conductive material is a material containing solder, and in the step of electrically connecting, the conductive material is formed between the bump and the surface of the circuit board. Solder reflow may be performed by interposing a material containing solder between the electrodes.

In this way, the height of the bumps is made uniform and the resin layer is formed on the main surface of the semiconductor chip in a lump in the wafer state, and after dividing into semiconductor chips, the material containing solder is reflowed by solder reflow. After curing, the bumps are securely connected to the electrodes of the circuit board. Therefore, since a plurality of semiconductor chips can be mounted on the circuit board at a time, a semiconductor device can be manufactured with higher throughput and higher reliability.

According to a seventh aspect of the present invention, in the method of manufacturing a semiconductor device according to any one of the first to sixth aspects, in the step of forming the resin layer, a thermoplastic resin or a thermoplastic resin is used as a material of the resin layer. In the step of electrically connecting using any of the thermosetting resins, it is preferable to cure the resin layer as an adhesive.

With this, the fixing of the semiconductor chip and the circuit board can be strengthened in the same process as the step of electrically connecting the bumps and the electrodes of the circuit board, so that a semiconductor device with improved strength can be manufactured with higher throughput. it can. In addition, by applying a temperature according to the characteristics of the thermoplastic resin or the thermosetting resin to connect the bumps to the electrodes of the circuit board and to cure the resin layer, select the optimal conditions for the connection to the semiconductor. Chips can be mounted.

[0026]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to FIGS. 1A to 1G are cross-sectional views illustrating each step of the method for manufacturing a semiconductor device according to the present embodiment.

First, as shown in FIG. 1A, pads 21 for bonding are formed on the main surface in a plurality of chip areas 22 of a wafer 20.

Next, as shown in FIG. 1B, in each chip area 22, an electrode 23 with a projection is formed on the pad 21 by using a gold wire and a general ball bonding wire bonding method.

Next, as shown in FIG. 1 (c), a resin layer 24A made of a thermoplastic resin is provided on the main surface of the wafer 20, that is, on the main surface of each chip region 22, by each of the electrodes 23 with projections.
Is formed so as to cover completely. Here, the resin layer 24A is formed by applying a thermoplastic resin diluted in a solvent by spin coating and performing a solvent removing process. In addition, in order to avoid warpage due to uneven distribution of stress on the mounting substrate after mounting the semiconductor chip and adverse effects due to moisture absorption, for a thermoplastic resin, residual stress due to heat history is small, that is, the glass transition temperature is high and low. It is required to be water absorbent. For this reason, it is preferable to use a polyimide polymer resin as the thermoplastic resin.

Next, as shown in FIG.
4A is polished to form a thin resin layer 24B having a resin polished surface 25, thereby forming a resin layer 24A.
The bumped electrode 23 covered with the bumps is also polished at the same time to form a gold bump 27 having a gold bump exposed surface 26 exposed at a uniform height from the main surface of the wafer 20.
As described above, since the protrusion-provided electrode 23 whose periphery is held by the resin layer 24A is polished, it is possible to prevent the protrusion of the protrusion-provided electrode 23 from falling or deforming. In addition, the protruding electrode 23
And the resin layer 24A are simultaneously polished, so that the gold bumps 27 having a uniform height can be formed stably.

Thereafter, as in the normal manufacturing process, a protective sheet is attached to the main surface of the wafer 20, and the surface facing the main surface is polished by using a back grinding technique. here,
In the back grinding technique, it is necessary to prevent air bubbles from being mixed between the main surface of the wafer 20 and the protective sheet for the purpose of preventing wafer breakage and achieving stable back grinding. For this purpose, a protective sheet is superimposed on the non-polished surface of the wafer 20, that is, on the main surface, and is inserted from the end of the wafer 20 between a pair of rollers having rotation directions opposite to each other. Press the protective sheet uniformly. According to the present embodiment, the polished resin polished surface 25 and the gold bump exposed surface 26 are formed at the same height position, so that when pressed uniformly with a roller, bubbles are not generated, and The protective sheet can be applied uniformly. This suppresses local undulation of the wafer 20 due to bubbles, thereby enabling stable back grinding and preventing damage to the wafer.

Next, as shown in FIG. 1E, the wafer 20 is divided by a dicing process,
Are completed.

Next, as shown in FIG. 1F, the semiconductor chip 10 is held by the bonding tool 30 so as to face the circuit board 40, and the gold bump 27 and the electrode 41 of the circuit board 40 can be correctly connected. The semiconductor chip 10 is placed on the circuit board 40 by the bonding tool 30. Here, the semiconductor chip 10 is heated by heating the bonding tool 30 in advance, and the circuit board 40 is heated by being brought into contact with the bonding stage 31 that has been heated beforehand, so that the resin layer 2 is heated.
4B is melted. Then, the semiconductor chip 10 is pressed against the circuit board 40 by the bonding tool 30, and the gold bump 27 and the electrode 41 are thermocompression bonded. In this case, the semiconductor chip 10 is heated so that the thermoplastic resin constituting the resin layer 24B is melted, and the circuit board is not cured even when the melted resin layer 24B contacts the circuit board 40. 40 needs to be heated. When performing thermocompression bonding, the surface of the gold bump 27 and the surface of the electrode 41 are brought into contact with each other and pressurized.
An alloy layer is formed between the surface of the gold bump 27 and the metal layer on the surface of the electrode 41 by the thermal energy supplied by the above. With this alloy layer, the gold bump 27 and the electrode 41 can be electrically connected.

Next, as shown in FIG. 1G, the semiconductor chip 1 is heated and pressed by the bonding tool 30.
After releasing 0, the circuit board 40 is released from the bonding stage 31. Then, the semiconductor chip 10 and the circuit board 40 are adhered and fixed by the resin layer 24C that has been cured again by cooling.

FIG. 2 is a sectional view of a mounting substrate to which the method of manufacturing a semiconductor device according to the present embodiment is applied. 2, reference numeral 10 denotes a semiconductor chip, 21 denotes bonding pads formed on the main surface of the semiconductor chip 10, 27 denotes gold bumps formed on the pads 21, 24C denotes a resin layer made of a cured thermoplastic resin, 40 is a circuit board, 41 is an electrode formed on the upper surface of the circuit board 40, and 51 is an alloy layer formed by the surface of the gold bump 27 and the metal layer on the surface of the electrode 41. Then, the gold bump 27 on the pad 21 and the electrode 41 of the circuit board 40 are securely connected by the alloy layer 51.

As described above, according to the method of manufacturing a semiconductor device according to the present embodiment, on the main surface of the wafer 20, the electrode 23 with projections completely covered with the resin layer 24A is polished simultaneously with the resin layer 24A. Then, the gold bump 2 having the gold bump exposed surface 26 exposed on the same surface as the resin polishing surface 25
7 is formed. Therefore, it is possible to stably form the gold bumps 27 in a wafer state while suppressing the falling and deformation during polishing, so that the throughput of the mounting process can be improved.

The gold bump exposed surface 26 is polished so as to be formed at the same height position as the resin polished surface 25. Therefore, when back grinding the wafer 20, the generation of bubbles between the non-polished surface of the wafer 20, that is, the main surface and the protective sheet, is suppressed, so that local undulation of the wafer 20 is prevented and stable. Enables back grinding and prevention of wafer breakage.

In the thermocompression bonding, even if the ultimate temperature of the semiconductor chip 10 due to the heating of the bonding tool 30 does not reach the melting temperature of the resin layer 24B, the circuit board 40 preheated by the bonding stage 31 can be attached to the resin layer. 2
The temperature of the bonding tool 30 and the temperature of the bonding stage 31 may be set so that the resin layer 24B is melted when 4B comes into contact.

The electrode 41 is generally made of a copper foil or a material in which a nickel layer is formed on the surface of the copper foil. Instead of the nickel layer, other materials such as aluminum, which easily forms an alloy layer with gold, are used. It goes without saying that the same effect can be obtained even if the metal layer is used.

Also, the gold bump 27 and the electrode 41 are connected by forming the alloy layer 51 by thermocompression bonding. Instead, the gold bump 27 and the electrode 41 pre-plated with gold are pressed into contact with each other to form the resin layer 24C. Alternatively, the semiconductor chip 10 and the circuit board 40 may be adhered and fixed. In this case, the gold bump 27 is brought into contact with the electrode 41 and the cured resin layer 24 is contacted.
Electrical connection can be achieved by applying pressure by the compressive stress of C.

(Second Embodiment) Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. 3A to 3G are cross-sectional views illustrating each step of the method for manufacturing a semiconductor device according to the present embodiment.

First, FIGS. 1A to 1C of the first embodiment.
3A to 3E, the gold bump exposed surface 26 exposed from the resin polishing surface 25 is similar to that shown in FIG.
Is formed, the wafer 20 is divided, and a plurality of semiconductor chips 10 each including the chip region 22 are formed.
To complete.

Next, as shown in FIG. 3F, the semiconductor chip 10 is held by the bonding tool 30 so as to be opposed to the circuit board 40 so that the gold bumps 27 and the electrodes 41 of the circuit board 40 can be correctly connected. Position. Here, the conductive adhesive 52A is previously formed on the electrode 41 by, for example, a screen printing technique using a squeegee. Then, by heating the bonding tool 30 in advance, the semiconductor chip 10 is heated to melt the resin layer 24B, and the circuit board 40 is heated by being brought into contact with the previously heated bonding stage 31.

Next, as shown in FIG. 3G, the semiconductor chip 10 is
Then, the gold bump 27 and the electrode 41 are thermocompression-bonded via the conductive adhesive 52A. In this case, the semiconductor chip 10 is heated so that the thermoplastic resin constituting the resin layer 24B is melted, and the circuit board 40 is cured so that even if the melted resin layer 24B contacts the circuit board 40, it is not hardened. Heating is performed, and a sufficient temperature and time for curing the conductive adhesive 52A are maintained. After that, the semiconductor chip 10 is released from the heating and pressurization by the bonding tool 30, and then the circuit board 40 is released from the bonding stage 31. Then, the resin layer 24B is cured again by cooling, and the semiconductor chip 10 and the circuit board 40 are bonded and fixed.

FIG. 4 is a sectional view of a mounting substrate to which the method of manufacturing a semiconductor device according to the present embodiment is applied. 4, reference numeral 10 denotes a semiconductor chip, 21 denotes a bonding pad formed on the main surface of the semiconductor chip 10, 27 denotes a gold bump formed on the pad 21, 24C denotes a resin layer made of a cured thermoplastic resin, 40 is a circuit board, 41 is an electrode formed on the upper surface of the circuit board 40, 52B is a gold bump 27
And a conductive adhesive provided between the electrode 41 and the cured conductive adhesive. Then, the gold bump 27 on the pad 21 and the circuit board 4
The zero electrode 41 is securely connected by the cured conductive adhesive 52B.

As described above, according to the method of manufacturing a semiconductor device according to the present embodiment, as in the case of the first embodiment, it is possible to suppress the falling and deformation during polishing and to maintain the wafer state. Since the gold bumps 27 can be formed stably collectively, the throughput of the mounting process can be improved.

As in the case of the first embodiment, when the back grinding of the wafer 20 is performed,
Since the generation of air bubbles between the main surface and the protection sheet is suppressed, local undulation of the wafer 20 is prevented, and stable back grinding and prevention of breakage of the wafer are enabled.

In the thermocompression bonding, even if the temperature at which the semiconductor chip 10 reaches the melting temperature of the resin layer 24B due to the heating of the bonding tool 30 does not reach the melting temperature of the resin layer 24B, the circuit board 40 preheated by the bonding stage 31 can be used. 2
While 4B is in contact, resin layer 24B melts, and
The conductive adhesive 52A may be cured. That is, the temperature of the bonding tool 30 and the temperature of the semiconductor chip 10 are maintained such that the temperature for melting the resin layer 24B during the thermocompression bonding and the temperature and time sufficient for the conductive adhesive 52A to cure are maintained. The contact time may be set, and the temperature of the bonding stage 31 and the contact time with the circuit board 40 may be set.

Third Embodiment A third embodiment of the present invention will be described below with reference to FIGS. 5A to 5G are cross-sectional views illustrating each step of the method for manufacturing a semiconductor device according to the present embodiment.

First, the first embodiment shown in FIGS.
5A to 5E, the gold bump exposed surface 26 exposed from the resin polishing surface 25 is similar to that shown in FIG.
Is formed, the wafer 20 is divided, and a plurality of semiconductor chips 10 each including the chip region 22 are formed.
To complete.

Next, as shown in FIG. 5F, a solder paste 53A is previously formed on the electrodes 41 of the circuit board 40 by, for example, a screen printing technique using a squeegee. Here, the flux contained in the solder paste 53A is preferably a non-cleaning type flux.

Next, as shown in FIG. 5G, the semiconductor chip 1 is placed on the circuit board 40 on which the solder paste 53A is formed.
0 and the gold bump 27 and the electrode 41 of the circuit board 40
The semiconductor chip 10 is mounted on the circuit board 40 after the positions are adjusted so that the and can be connected properly. And
The solder reflow process is performed at a temperature equal to or higher than the temperature at which the resin layer 24B and the solder paste 53A melt. After this solder reflow process, the semiconductor chip 10 and the circuit board 40 are bonded and fixed by cooling and curing the resin layer 24B, and at the same time, the gold bump 27 and the electrode are cooled and cured by the solder paste 53A. 41 is electrically connected.

FIG. 6 is a sectional view of a mounting substrate to which the method of manufacturing a semiconductor device according to the present embodiment is applied. 6, reference numeral 10 denotes a semiconductor chip, 21 denotes bonding pads formed on the main surface of the semiconductor chip 10, 27 denotes gold bumps formed on the pads 21, 24C denotes a resin layer made of a cured thermoplastic resin, 40 is a circuit board, 41 is an electrode formed on the upper surface of the circuit board 40, 53B is a gold bump 27
And the electrode 41 is hardened solder. Then, the gold bump 27 on the pad 21 and the electrode 41 of the circuit board 40 are securely connected by the cured solder 53B.

As described above, according to the method of manufacturing a semiconductor device according to the present embodiment, as in the case of the first embodiment, it is possible to suppress the falling and deformation during polishing and to maintain the wafer state. Since the gold bumps 27 can be formed stably collectively, the throughput of the mounting process can be improved.

As in the case of the first embodiment, when the back grinding of the wafer 20 is performed,
Since the generation of air bubbles between the main surface and the protection sheet is suppressed, local undulation of the wafer 20 is prevented, and stable back grinding and prevention of breakage of the wafer are enabled.

Further, by using solder reflow,
Many semiconductor chips 10 can be connected and fixed to the circuit board 40 at the same time. Therefore, the throughput of the mounting process can be further improved.

(Fourth Embodiment) Hereinafter, a fourth embodiment of the present invention will be described with reference to FIGS. 7A to 7G are cross-sectional views illustrating each step of the method for manufacturing a semiconductor device according to the present embodiment.

First, FIGS. 1A to 1C of the first embodiment.
7A to 7E, the gold bump exposed surface 26 exposed from the resin polishing surface 25 is similar to that shown in FIG.
Is formed, the wafer 20 is divided, and a plurality of semiconductor chips 10 each including the chip region 22 are formed.
To complete.

Next, as shown in FIG.
The semiconductor chip 10 is pressed against the circuit board 40 by the bonding tool 30, and the gold bump 27 and the electrode 41 are thermocompression bonded. Here, the difference from the first embodiment is shown in FIG.
As shown in (f), the gold bump 27 and the electrode 41 are thermocompression bonded while applying ultrasonic waves to the bonding tool 30 using the horn 32. That is, the surface of the heated gold bump 27 and the surface of the electrode 41 are brought into contact with each other and pressurized while applying ultrasonic waves. Thereby, the thermal energy supplied by the bonding tool 30 and
By the ultrasonic energy supplied from the horn 32 via the bonding tool 30, an alloy layer is formed between the surface of the gold bump 27 and the metal layer on the surface of the electrode 41.
With this alloy layer, the gold bump 27 and the electrode 41 can be electrically connected.

Next, as shown in FIG. 7 (g), the semiconductor chip 10 and the circuit board 40 are separated by the resin layer 24C which has been cooled and hardened again in the same manner as in the first embodiment. Glue and fix.

FIG. 8 is a sectional view of a mounting substrate to which the method of manufacturing a semiconductor device according to the present embodiment is applied. 2, reference numeral 10 denotes a semiconductor chip, 21 denotes bonding pads formed on the main surface of the semiconductor chip 10, 27 denotes gold bumps formed on the pads 21, 24C denotes a resin layer made of a cured thermoplastic resin, 40 is a circuit board, 41 is an electrode formed on the upper surface of the circuit board 40, and 51 is an alloy layer formed by the surface of the gold bump 27 and the metal layer on the surface of the electrode 41. Then, the gold bump 27 on the pad 21 and the electrode 41 of the circuit board 40 are securely connected by the alloy layer 51.

As described above, according to the method of manufacturing a semiconductor device according to the present embodiment, as in the case of the first embodiment, it is possible to suppress collapse and deformation during polishing, and Since the gold bumps 27 can be formed stably collectively, the throughput of the mounting process can be improved.

As in the case of the first embodiment, when the back grinding of the wafer 20 is performed,
Since the generation of air bubbles between the main surface and the protection sheet is suppressed, local undulation of the wafer 20 is prevented, and stable back grinding and prevention of breakage of the wafer are enabled.

Further, according to the present embodiment, since not only thermal energy but also ultrasonic energy is applied to perform thermocompression bonding, the semiconductor chip can be mounted at a lower temperature than when thermocompression bonding is performed using only thermal energy. it can. Therefore, for example, a semiconductor chip whose characteristics change when processed at a high temperature can be mounted without affecting the characteristics.

In the thermocompression bonding, even if the temperature at which the semiconductor chip 10 reaches the melting temperature of the resin layer 24B due to the heating of the bonding tool 30 does not reach the melting temperature of the resin layer 24B, the resin layer is applied to the circuit board 40 preheated by the bonding stage 31. 2
The temperature of the bonding tool 30 and the temperature of the bonding stage 31 may be set so that the resin layer 24B is melted when 4B comes into contact. And also these temperatures are
What is necessary is just to set so that the alloy layer 51 is formed when thermocompression bonding is performed in a state where ultrasonic energy is applied.

The electrode 41 is generally made of a copper foil or a material in which a nickel layer is formed on the surface of the copper foil. Instead of the nickel layer, other materials such as aluminum, which easily forms an alloy layer with gold, are used. It goes without saying that the same effect can be obtained even if the metal layer is used.

The gold bump 27 and the electrode 41 are connected by forming the alloy layer 51 by thermocompression bonding. Alternatively, the gold bump 27 and the electrode 41 pre-plated with gold are pressed into contact with each other to form the resin layer 24C. Alternatively, the semiconductor chip 10 and the circuit board 40 may be adhered and fixed. In this case, the gold bump 27 is brought into contact with the electrode 41 and the cured resin layer 24 is contacted.
Electrical connection can be achieved by applying pressure by the compressive stress of C.

In each of the embodiments described above, a thermoplastic resin is used as the resin layer. Alternatively, a thermosetting resin such as an epoxy resin or a phenol resin may be used. it can. In this case,
The thermosetting resin may be diluted with a solvent as in the case of the thermoplastic resin, applied by spin coating, polished in an incompletely cured state, and then completely cured.

Further, the resin layer is formed so as to completely cover the electrode with projections. However, the present invention is not limited to this. Polishing may be performed until the positions are the same.

The circuit board described in each of the above embodiments may be a circuit board on which a plurality of semiconductor chips are mounted and used in electric equipment or the like, or a single CSP (single semiconductor chip) may be mounted. It goes without saying that a circuit board for use as a chip size package) may be used.

As the circuit board, a laminated board made of glass epoxy or the like, a ceramic board, a metal base board based on copper or the like, a flexible board based on a resin such as polyimide, or the like can be used.

[0072]

According to the first to fifth aspects, the height of the bumps is made uniform and the resin layer is formed on the main surface of the semiconductor chip at a time in the wafer state, and the semiconductor chip is divided into the semiconductor chips and the face down is performed. To mount the semiconductor chip on the circuit board. Therefore, since bare chip mounting can be performed at high throughput, a semiconductor device can be manufactured with reduced manufacturing costs.

According to the present invention, in addition to uniformizing the height of the bumps and forming the resin layer on the main surface of the semiconductor chip at the same time in a wafer state, a plurality of semiconductors can be formed by solder reflow. By mounting the chips collectively on the circuit board, the semiconductor chips can be mounted with higher throughput, so that the manufacturing cost can be further reduced and the semiconductor device can be manufactured.

According to the seventh aspect, since the electrical connection and the fixing of the semiconductor chip and the circuit board are performed in the same step, a semiconductor device with improved strength can be manufactured with higher throughput. Further, since the semiconductor chip is mounted by applying a temperature according to the characteristics of the thermoplastic resin or the thermosetting resin, it is possible to manufacture a semiconductor device by selecting optimum conditions for connection.

[Brief description of the drawings]

FIGS. 1A to 1G are cross-sectional views showing each step of a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a partial cross-sectional view of a mounting substrate to which the method for manufacturing the semiconductor device shown in FIG. 1 is applied.

FIGS. 3A to 3G are cross-sectional views illustrating respective steps of a method for manufacturing a semiconductor device according to a second embodiment of the present invention. FIGS.

FIG. 4 is a partial cross-sectional view of a mounting substrate to which the method for manufacturing the semiconductor device shown in FIG. 3 is applied;

FIGS. 5A to 5G are cross-sectional views illustrating steps of a method for manufacturing a semiconductor device according to a third embodiment of the present invention.

6 is a partial cross-sectional view of a mounting substrate to which the method for manufacturing the semiconductor device shown in FIG. 5 is applied.

FIGS. 7A to 7G are cross-sectional views illustrating steps of a method for manufacturing a semiconductor device according to a fourth embodiment of the present invention.

8 is a partial cross-sectional view of a mounting board to which the method for manufacturing the semiconductor device shown in FIG. 7 is applied.

FIG. 9 is a partial cross-sectional view of a mounting board to which an SBB method, which is a conventional method for manufacturing a semiconductor device, is applied.

FIGS. 10A to 10G are cross-sectional views showing respective steps of a conventional SBB method.

FIG. 11 is a partial cross-sectional view of a mounting substrate to which a method using an anisotropic conductive film, which is a conventional method for manufacturing a semiconductor device, is applied.

FIGS. 12A to 12F are cross-sectional views illustrating steps of a conventional method for manufacturing a semiconductor device using an anisotropic conductive film.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor chip 20 Wafer 21 Pad 22 Chip area 23 Electrode with projection 24A, 24B, 24C Resin layer 25 Resin polished surface 26 Gold bump exposed surface (upper surface of bump) 27 Gold bump (bump) 30 Bonding tool 31 Bonding stage 32 Horn 40 Circuit board 41 Electrode 51 Alloy layer 52A, 52B Conductive adhesive 53A Solder paste (substance containing solder) 53B Solder

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/60

Claims (7)

(57) [Claims] 1. A semiconductor chip mounted on a circuit board.
And a method of manufacturing a semiconductor device using a stud bump bonding method, wherein a ball bonding wire bonding method is provided on a pad formed on each of main surfaces of a plurality of chip areas of a wafer.
Forming a protruding electrode using the method, and at least on the protruding electrode on the wafer
Forming a resin layer that fills the space between the electrodes with protrusions by exposing portions, and polishing the resin layer and the electrodes with protrusions until the upper surfaces of the resin layer and the electrodes with protrusions have the same height. And the pier
Forming a bump from the raised electrode; separating the wafer into a plurality of semiconductor chips by separating each of the chip regions; and causing the bumps on the semiconductor chip and the electrodes on the circuit board to face each other. Manufacturing the semiconductor device, comprising the steps of: positioning the semiconductor chip on the circuit board; and electrically connecting the bumps to the electrodes on the circuit board. Method. 2. The method of manufacturing a semiconductor device according to claim 1, wherein in the step of electrically connecting, an upper surface of the bump and an electrode on the circuit board are thermocompression-bonded to form an alloy layer. And electrically connecting the bumps to the electrodes on the circuit board. 3. The method of manufacturing a semiconductor device according to claim 2, wherein, in the step of electrically connecting, thermocompression bonding is performed while applying ultrasonic waves to a contact portion between an upper surface of the bump and an electrode on the circuit board. A method for manufacturing a semiconductor device, comprising: forming an alloy layer by heating. 4. The method for manufacturing a semiconductor device according to claim 1, wherein the step of aligning further comprises a step of forming a conductive material between the bump and an electrode on the circuit board. The method of manufacturing a semiconductor device, wherein the step of electrically connecting comprises curing the conductive material. 5. The method of manufacturing a semiconductor device according to claim 4, wherein the conductive material is a conductive adhesive, and in the step of electrically connecting, an upper surface of the bump and an electrode on the circuit board are electrically connected to each other. Is thermocompression-bonded via the conductive adhesive. 6. The method of manufacturing a semiconductor device according to claim 4, wherein the conductive material is a material containing solder, and in the step of electrically connecting, between the bump and an electrode on the circuit board. And reflowing the solder by interposing the substance containing the solder in the semiconductor device. 7. The method for manufacturing a semiconductor device according to claim 1, wherein, in the step of forming the resin layer, a thermoplastic resin or a thermosetting resin is used as a material of the resin layer. The method of manufacturing a semiconductor device, wherein in the step of electrically connecting using any one of the above, the resin layer is cured as an adhesive.