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JPH09219579A - Connecting method and device of electronic part - Google Patents

Connecting method and device of electronic part

Info

Publication number
JPH09219579A
JPH09219579A JP2555796A JP2555796A JPH09219579A JP H09219579 A JPH09219579 A JP H09219579A JP 2555796 A JP2555796 A JP 2555796A JP 2555796 A JP2555796 A JP 2555796A JP H09219579 A JPH09219579 A JP H09219579A
Authority
JP
Japan
Prior art keywords
electronic component
electrode
conductive adhesive
anisotropic conductive
acf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2555796A
Other languages
Japanese (ja)
Inventor
Susumu Ozawa
進 小澤
Akira Fujiwara
亮 藤原
Toshimitsu Yamashita
俊光 山下
Yuushi Kitayama
憂子 北山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2555796A priority Critical patent/JPH09219579A/en
Publication of JPH09219579A publication Critical patent/JPH09219579A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743Apparatus for manufacturing layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83191Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494Heating methods for reflowing of solder

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To improve the reliability upon the connecting status in the case of connecting an electronic part with an electrode through the intermediary of a thermosetting conductive adhesive. SOLUTION: An ACF 13 in the size required for connection is fed to a semiconductor chip 12. At this time, a void 14 is formed around a protrusion of the semiconductor chip 12 moreover, irregularities 13a are formed on the surface of the fed ACF 13. Next, a chip electrode 12a and a substrate electrode 15a are opposed to each other. The semiconductor chip 12 in the state of pressure welded onto a circuit substrate 15 is heated. In the first heating step, the semiconductor chip 12 is heated at the temperature between the sofening start temperature and setting start temperature to thermal-expand the air inside the void 14 to making the floating easier to exhaust the air out of the cormecting part. In the second heating step, a cormecting device tool 11 is set up at the setting temperature of the ACF 13 for setting said ACF 13 thereby enabling the ACF 13 to be fixed in the state of leaving no void at all around the chip electrode 12a and the substrate electrode 15a.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、例えば回路基板や
半導体チップ等のような電極を有する電子部品を、異方
導電性接着剤を用いて接続する電子部品の接続方法及び
接続装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component connecting method and a connecting device for connecting an electronic component having an electrode such as a circuit board or a semiconductor chip by using an anisotropic conductive adhesive. is there.

【0002】[0002]

【従来の技術】従来、このような分野の技術としては、
例えば、次のような文献に記載されるものがあった。 文献;第5回マイクロエレクトロニクスシンポジウム(M
ES'93)論文集 塩沢直行、井坂和博、塚越功、大田共久共著、「異方導
電フィルムを用いた高密度接続における導電粒子の役
割」、P.79-82 図2(a),(b)は、前記文献に記載された従来の電
子部品(例えば、回路基板と半導体チップ)の接続方法
の一例を示す工程図である。以下、その工程(1),
(2)を図2(a),(b)を参照しつつ説明する。
2. Description of the Related Art Conventionally, techniques in such a field include:
For example, some documents were described in the following documents. Literature; The 5th Microelectronics Symposium (M
ES'93) Proceedings Naoyuki Shiozawa, Kazuhiro Isaka, Isao Tsukagoshi, Kyohisa Ohta, "Role of conductive particles in high-density connection using anisotropic conductive film", P.79-82 Figure 2 (a), ( FIG. 2B is a process diagram showing an example of a conventional method for connecting electronic components (for example, a circuit board and a semiconductor chip) described in the above document. Hereinafter, the process (1),
(2) will be described with reference to FIGS. 2 (a) and 2 (b).

【0003】(1) 図2(a)の工程 回路基板1の表面に形成された基板電極1aと半導体チ
ップ2の表面に形成されたチップ電極2aとを対向さ
せ、それらの間に異方導電性接着剤である異方導電性フ
ィルム(Anisotropic Conductive Film 、以下、ACF
という)3を挟む。このACF3は、導電性粒子3aと
して例えばハンダ等の金属粒子やプラスチック粒子に例
えば金(Au)等の金属めっきを施した変形性導電性粒子を
用い、これを熱硬化型のエポキシ系の樹脂に均一分散し
たものである。 (2) 図2(b)の工程 接続装置を用い、半導体チップ2を介してACF3に対
して該ACF3の樹脂が硬化する温度(例えば、200
℃)で加熱H及び加圧P(例えば、4kg/ 5mm2 )を施
し、基板電極1aとチップ電極2aとを導電性粒子3a
を介して接続する。このACF3を用いた回路基板1と
半導体チップ2の接続方法では、基板電極1aとチップ
電極2aとの接続抵抗を低くでき、かつ、回路基板1が
間隔の微細な複数の基板電極1aを有する場合や、半導
体チップ2が間隔の微細な複数のチップ電極2aを有す
る場合であっても接続が可能となる。
(1) Process of FIG. 2 (a) The substrate electrode 1a formed on the surface of the circuit board 1 and the chip electrode 2a formed on the surface of the semiconductor chip 2 are opposed to each other, and anisotropic conductivity is provided therebetween. Anisotropic adhesive film (Anisotropic Conductive Film, hereinafter ACF)
Say) 3. The ACF 3 uses, as the conductive particles 3a, metal particles such as solder or deformable conductive particles obtained by plating metal such as gold (Au) on plastic particles, which is used as a thermosetting epoxy resin. It is uniformly dispersed. (2) Using the connection device of FIG. 2B, the temperature at which the resin of the ACF 3 is cured with respect to the ACF 3 via the semiconductor chip 2 (for example, 200
Heating (H) and pressurization (P) (for example, 4 kg / 5 mm 2 ) at (° C.) to attach the substrate electrode 1a and the chip electrode 2a to the conductive particles 3a.
Connect through. In the method of connecting the circuit board 1 and the semiconductor chip 2 using the ACF 3, the connection resistance between the board electrode 1a and the chip electrode 2a can be lowered, and the circuit board 1 has a plurality of board electrodes 1a with fine intervals. Alternatively, even when the semiconductor chip 2 has a plurality of chip electrodes 2a with fine intervals, connection is possible.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、図2の
電子部品の接続方法では、次のような課題があった。即
ち、図2では、基板電極1aとチップ電極2aは、AC
F3の供給時にできる該ACF3の凹凸により、空気を
巻き込んだ状態(即ち、ボイドが発生した状態)で接続
されることがある。そのため、接着強度或いは接続状態
の信頼性が低下することがある。又、回路基板1が間隔
の微細な複数の基板電極1aを有する場合や、半導体チ
ップ2が間隔の微細な複数のチップ電極2aを有する場
合では、前記ボイドが接着時の熱によって膨張し、この
膨脹によってACF3が該基板電極1aと該チップ電極
2aとの接続部の周辺に必要以上に流出し、該基板電極
1aと該チップ電極2aとの接続状態の信頼性が悪化す
るという問題があった。
However, the electronic component connecting method of FIG. 2 has the following problems. That is, in FIG. 2, the substrate electrode 1a and the chip electrode 2a are AC
Due to the unevenness of the ACF 3 formed when the F 3 is supplied, the ACF 3 may be connected in a state in which air is entrained (that is, a void is generated). Therefore, the adhesive strength or the reliability of the connected state may be reduced. Further, when the circuit board 1 has a plurality of finely spaced substrate electrodes 1a, or when the semiconductor chip 2 has a plurality of finely spaced chip electrodes 2a, the voids expand due to heat during bonding, There is a problem that the expansion causes the ACF 3 to flow out more than necessary around the connecting portion between the substrate electrode 1a and the chip electrode 2a, and the reliability of the connection state between the substrate electrode 1a and the chip electrode 2a is deteriorated. .

【0005】[0005]

【課題を解決するための手段】第1の発明は、前記課題
を解決するために、第1の電子部品の電極を熱硬化性の
異方導電性接着剤を用いて第2の電子部品の電極に接続
する電子部品の接続方法において、次のような工程を行
うようにしている。即ち、前記第1の電子部品の電極と
前記第2の電子部品の電極とを対向させる位置合わせ工
程と、前記異方導電性接着剤が被着された前記第1の電
子部品を前記第2の電子部品に圧接した状態で該異方導
電性接着剤を該異方導電性接着剤の軟化開始温度から硬
化開始温度の間の温度で所定の時間加熱する第1の加熱
工程と、前記異方導電性接着剤を該異方導電性接着剤が
硬化する温度で所定の時間加熱する第2の加熱工程と
を、順に行うようにしている。この第1の発明によれ
ば、以上のように電子部品の接続方法を構成したので、
位置合わせ工程において、第1の電子部品の電極と第2
の電子部品の電極とが対向するように位置が設定され
る。
In order to solve the above-mentioned problems, the first invention uses a thermosetting anisotropic conductive adhesive for the electrodes of the first electronic component to form a second electronic component. In the method of connecting the electronic component connected to the electrode, the following steps are performed. That is, the step of aligning the electrodes of the first electronic component and the electrodes of the second electronic component to face each other, and the first electronic component to which the anisotropic conductive adhesive is applied is the second electronic component. A first heating step of heating the anisotropic conductive adhesive at a temperature between a softening start temperature and a curing start temperature of the anisotropic conductive adhesive for a predetermined time while being pressed against the electronic component; A second heating step of heating the anisotropically conductive adhesive at a temperature at which the anisotropically conductive adhesive cures for a predetermined time is sequentially performed. According to the first aspect of the invention, since the electronic component connecting method is configured as described above,
In the alignment process, the electrodes of the first electronic component and the second
The position is set so as to face the electrode of the electronic component.

【0006】次に、第1の加熱工程において、異方導電
性接着剤が被着された前記第1の電子部品が前記第2の
電子部品に圧接された状態で、該異方導電性接着剤が該
異方導電性接着剤の軟化開始温度から硬化開始温度の間
の温度で所定の時間加熱される。すると、異方導電性接
着剤が軟化し、前記第1の電子部品の表面のバンプ等の
段差周辺に形成されているボイド内の空気が膨張し、こ
の空気が前記第1の電子部品の電極と前記第2の電子部
品の電極との接続部の外に排出される。更に、第2の加
熱工程において、前記第1の電子部品と前記第2の電子
部品との間の異方導電性接着剤が該異方導電性接着剤が
硬化する温度で所定の時間加熱され、該第1の電子部品
の電極と該第2の電子部品の電極とがそれらの接続部に
ボイドが残留しない状態で接続される。
Next, in the first heating step, the anisotropic conductive adhesive is applied in a state in which the first electronic component coated with the anisotropic conductive adhesive is pressed against the second electronic component. The agent is heated at a temperature between the softening start temperature and the curing start temperature of the anisotropically conductive adhesive for a predetermined time. Then, the anisotropic conductive adhesive is softened, the air in the voids formed around the bumps and the like on the surface of the first electronic component expands, and this air causes the electrode of the first electronic component to expand. And is discharged to the outside of the connection portion between the second electronic component and the electrode. Furthermore, in the second heating step, the anisotropic conductive adhesive between the first electronic component and the second electronic component is heated for a predetermined time at a temperature at which the anisotropic conductive adhesive cures. , The electrode of the first electronic component and the electrode of the second electronic component are connected to each other in a state where no void remains at their connecting portions.

【0007】第2の発明では、第1の電子部品の電極を
熱硬化性の異方導電性接着剤を介して第2の電子部品の
電極に接続する電子部品の接続装置において、次のよう
な手段を備えている。即ち、前記第1の電子部品の電極
と前記第2の電子部品の電極とを対向させる位置合わせ
手段と、前記異方導電性接着剤が被着された前記第1の
電子部品を前記第2の電子部品に圧接した状態で該異方
導電性接着剤を該異方導電性接着剤の軟化開始温度から
硬化開始温度の間の温度で所定の時間加熱した後、該異
方導電性接着剤を該異方導電性接着剤が硬化する温度で
所定の時間加熱する加熱手段とを、備えている。
According to a second aspect of the invention, in an electronic component connecting device for connecting an electrode of a first electronic component to an electrode of a second electronic component via a thermosetting anisotropic conductive adhesive, Equipped with various means. That is, the alignment means that makes the electrodes of the first electronic component and the electrodes of the second electronic component face each other, and the first electronic component to which the anisotropic conductive adhesive is applied is the second electronic component. After heating the anisotropic conductive adhesive in a state of being pressed against the electronic component at a temperature between the softening start temperature and the curing start temperature of the anisotropic conductive adhesive for a predetermined time, the anisotropic conductive adhesive And heating means for heating the anisotropic conductive adhesive for a predetermined time at a temperature at which the anisotropic conductive adhesive is cured.

【0008】この第2の発明によれば、第1の電子部品
の電極は、位置合わせ手段によって第2の電子部品の電
極と対向するように位置が調整される。次に、前記第1
の電子部品に被着された異方導電性接着剤は、加熱手段
によって前記第2の電子部品に所定の圧力で圧接された
状態で該異方導電性接着剤の軟化開始温度から硬化開始
温度の間の温度で所定の時間加熱される。すると、前記
異方導電性接着剤が軟化し、前記第1の電子部品の表面
のバンプ(突起物)等の段差周辺に形成されているボイ
ド内の空気が膨張し、この空気が前記第1の電子部品の
電極と前記第2の電子部品の電極との接続部の外に排出
される。その後、前記異方導電性接着剤は、該異方導電
性接着剤が硬化する温度で所定の時間加熱され、前記第
1の電子部品の電極と前記第2の電子部品の電極とがそ
れらの接続部にボイドが残留しない状態で接続される。
従って、前記課題を解決できるのである。
According to the second aspect of the invention, the position of the electrode of the first electronic component is adjusted by the alignment means so as to face the electrode of the second electronic component. Next, the first
The anisotropic conductive adhesive applied to the electronic component is heated from the softening start temperature to the curing start temperature of the anisotropic conductive adhesive while being pressed against the second electronic component with a predetermined pressure by the heating means. It is heated for a predetermined time at a temperature between. Then, the anisotropic conductive adhesive is softened, and the air in the voids formed around the bump (projection) or the like on the surface of the first electronic component expands, and this air expands. Is discharged to the outside of the connecting portion between the electrode of the electronic component and the electrode of the second electronic component. Thereafter, the anisotropic conductive adhesive is heated for a predetermined time at a temperature at which the anisotropic conductive adhesive is cured, and the electrodes of the first electronic component and the electrodes of the second electronic component are separated from each other. The connection is made without leaving any voids.
Therefore, the above problem can be solved.

【0009】[0009]

【発明の実施の形態】図1(a)〜(d)は、本発明の
実施形態を示す電子部品の接続方法の一例を示す工程図
である。以下、その工程(1)〜(4)を図1(a)〜
(d)を参照しつつ説明する。 (1) 図1(a)の工程 接続装置11にチップ電極12aを有する第1の電子部
品(例えば、半導体チップ)12を真空吸着させた後、
該接続装置11に対してACF13を軟化させて剥離す
るための熱(例えば、50〜60℃)と荷重(例えば、700
〜1000g/ 5mm2)を所定の時間(例えば、2秒)かけ
る。すると、シート状又はテープ状のACF13から接
続に必要なサイズのACF13が半導体チップ12に供
給される。又、この時、半導体チップ12のチップ電極
12a等のバンプの周辺には、巻き込み空気によるボイ
ド14が形成され、更に、供給されたACF13の表面
には凹凸13aが形成される。
1 (a) to 1 (d) are process drawings showing an example of a method of connecting electronic components showing an embodiment of the present invention. Hereinafter, the steps (1) to (4) will be described with reference to FIGS.
This will be described with reference to (d). (1) Process of FIG. 1 (a) After the first electronic component (for example, semiconductor chip) 12 having the chip electrode 12a is vacuum-sucked to the connection device 11,
Heat (eg, 50 to 60 ° C.) and load (eg, 700) for softening and separating the ACF 13 from the connection device 11
Approximately 1000 g / 5 mm 2 ) is applied for a predetermined time (for example, 2 seconds). Then, the sheet-shaped or tape-shaped ACF 13 supplies the semiconductor chip 12 with the ACF 13 having a size necessary for connection. At this time, voids 14 due to the entrained air are formed around the bumps such as the chip electrodes 12a of the semiconductor chip 12, and further, the unevenness 13a is formed on the surface of the supplied ACF 13.

【0010】(2) 図1(b)の工程(位置合わせ工
程) ACF13が供給された半導体チップ12を接続装置1
1に吸着させ、チップ電極12aと第2の電子部品(例
えば、回路基板)15の表面に形成された基板電極15
aとを対向させる。尚、この位置合わせ工程では、接続
装置11が位置合わせ手段として作用している。即ち、
半導体チップ12上の画像認識用パターン及び回路基板
15上の画像認識用パターンをCCDカメラ等で認識
し、それらの平行度を求めて、チップ電極12aと基板
電極15aとが対向するように接続装置11の位置を調
整する。
(2) Process of FIG. 1B (positioning process) The semiconductor chip 12 supplied with the ACF 13 is connected to the connecting device 1
Substrate electrode 15 formed on the surface of the chip electrode 12a and the second electronic component (for example, a circuit board) 15 by being attracted to
Face a. In addition, in this alignment step, the connection device 11 functions as alignment means. That is,
The connection device is arranged such that the image recognition pattern on the semiconductor chip 12 and the image recognition pattern on the circuit board 15 are recognized by a CCD camera or the like, the parallelism between them is obtained, and the chip electrode 12a and the substrate electrode 15a face each other. Adjust the position of 11.

【0011】(3) 図1(c)の工程(第1の加熱工
程) 位置合わせが行われた半導体チップ12を吸着した加熱
手段である接続装置11を用いて半導体チップ12を回
路基板15に圧接した状態で加熱する。この加熱は、第
1段階として、巻き込んだ空気によるボイド14が熱膨
張して流動しやすくするため、ACF13の軟化開始温
度(50〜60℃)から硬化開始温度(約200 ℃)の間の温
度(例えば、硬化開始温度より20〜30℃程度低い温
度)で行い、約10秒程度保持し、ボイド14中の空気
を接続部外に排出する。 (4) 図1(d)の工程(第2の加熱工程) 第2段階の加熱として、接続装置11の温度をACF1
3の樹脂が硬化する温度(例えば、200 ℃)に設定し、
約30秒程度保持して該ACF13の樹脂を硬化させ、
接続部にボイドが残留しない状態で固定する。その後、
吸着を解除して接続が終了する。
(3) Step of FIG. 1C (first heating step) The semiconductor chip 12 is mounted on the circuit board 15 by using the connecting device 11 which is a heating means for adsorbing the aligned semiconductor chip 12. Heat with pressure contact. As a first step, this heating makes the voids 14 due to the entrained air thermally expand and flow easily, so that the temperature between the softening start temperature (50 to 60 ° C) and the hardening start temperature (about 200 ° C) of the ACF 13 is increased. (For example, the temperature is lower than the curing start temperature by about 20 to 30 ° C.) and held for about 10 seconds, and the air in the void 14 is discharged to the outside of the connection portion. (4) Process of FIG. 1D (second heating process) As the second stage heating, the temperature of the connection device 11 is set to ACF1.
Set the temperature at which the resin of 3 cures (for example, 200 ℃),
Hold for about 30 seconds to cure the resin of the ACF 13,
Fix with no voids remaining at the connection. afterwards,
The adsorption ends and the connection ends.

【0012】以上の工程(1)〜(4)を順に行うこと
により、接続部のバンプ等の段差周辺に残留するボイド
が低減する。このボイドが低減することにより、ACF
13の樹脂が接続部外に押し出された状態で硬化するこ
とがなくなるため、ACF13のはみ出し量が低減す
る。以上のように、本実施形態では、先ず第1の加熱工
程において、ACF13の樹脂の硬化開始温度より低い
温度で適切な時間保持することによって該ACF13の
樹脂を軟化させ、ボイド14内の空気を膨張させること
により、接続部外に空気を排出する。次に、第2の加熱
工程において、ACF13の樹脂が硬化する温度で加熱
して樹脂を完全に硬化させてチップ電極12aと基板電
極15aとの接続部を固定する。これらの2段階の加熱
により、チップ電極12aや基板電極15a等の段差周
辺に残留するボイドが低減するので、樹脂が該チップ電
極12aと該基板電極15aとの接続部外に押し出され
た状態で硬化してしまうことがなく、ACF13のはみ
出し量を低減することができる。そのため、ACF13
を介した半導体チップ12と回路基板15との接続状態
の信頼性が向上する。
By carrying out the above steps (1) to (4) in order, the voids remaining around the bumps or other steps in the connecting portion are reduced. By reducing this void, ACF
Since the resin of No. 13 does not harden in the state of being extruded to the outside of the connecting portion, the amount of protrusion of the ACF 13 is reduced. As described above, in the present embodiment, first, in the first heating step, the resin in the ACF 13 is softened by holding it at a temperature lower than the curing start temperature of the resin in the ACF 13 for an appropriate time, and the air in the void 14 is removed. By expanding, air is discharged to the outside of the connection part. Next, in the second heating step, the resin of the ACF 13 is heated at a temperature at which the resin is cured to completely cure the resin and fix the connection portion between the chip electrode 12a and the substrate electrode 15a. By these two steps of heating, voids remaining around the steps of the chip electrode 12a, the substrate electrode 15a, etc. are reduced, so that the resin is pushed out of the connection portion between the chip electrode 12a and the substrate electrode 15a. The amount of protrusion of the ACF 13 can be reduced without curing. Therefore, ACF13
The reliability of the connection state between the semiconductor chip 12 and the circuit board 15 via the is improved.

【0013】尚、本発明は上記実施形態に限定されず、
種々の変形が可能である。その変形例としては、例えば
次のようなものがある。 (a) 図1(a)の工程において、半導体チップ12
にACF13を被着する場合、該半導体チップ12を上
向きにし、該ACF13を下向きにして該ACF13を
降下させて被着してもよい。 (b) 図1(b)の工程において、チップ電極12a
の位置が調整されるようにしているが、基板電極15a
の位置が調整されるようにしてもよい。 (c) 上記実施形態では、半導体チップ12と回路基
板15とを接続する場合について説明したが、半導体チ
ップと半導体チップとの接続や、回路基板と回路基板と
の接続等にも適用できる。
The present invention is not limited to the above embodiment,
Various modifications are possible. For example, there are the following modifications. (A) In the process of FIG.
When the ACF 13 is attached to the substrate, the semiconductor chip 12 may be faced up and the ACF 13 may be faced downward to drop the ACF 13. (B) In the process of FIG. 1B, the chip electrode 12a
The position of the substrate electrode 15a is adjusted.
The position of may be adjusted. (C) In the above embodiment, the case where the semiconductor chip 12 and the circuit board 15 are connected has been described, but the present invention can also be applied to connection between a semiconductor chip and a semiconductor chip, connection between a circuit board and a circuit board, and the like.

【0014】[0014]

【発明の効果】以上詳細に説明したように、第1の発明
によれば、先ず第1の加熱工程において、異方導電性接
着剤が被着された第1の電子部品を第2の電子部品に圧
接した状態で該異方導電性接着剤の軟化開始温度から硬
化開始温度の間の温度で適切な時間保持することによっ
て該異方導電性接着剤を軟化させ、該第1の電子部品の
表面のバンプ等の段差周辺に形成されているボイド内の
空気を膨張させることにより、この空気を前記第1の電
子部品の電極と前記第2の電子部品の電極との接続部の
外に排出する。次に、第2の加熱工程において、異方導
電性接着剤が硬化する温度で加熱して該異方導電性接着
剤を完全に硬化させて接続部を固定する。これらの2段
階の加熱により、前記バンプ等の段差周辺に残留するボ
イドが低減するので、異方導電性接着剤が前記第1の電
子部品の電極と前記第2の電子部品の電極との接続部の
外に押し出された状態で硬化してしまうことがなく、該
異方導電性接着剤のはみ出し量を低減できる。そのた
め、異方導電性接着剤を介した第1の電子部品と第2の
電子部品との接続状態の信頼性を向上できる。
As described in detail above, according to the first aspect of the present invention, first, in the first heating step, the first electronic component coated with the anisotropic conductive adhesive is replaced with the second electronic component. The anisotropic conductive adhesive is softened by holding it at a temperature between the softening start temperature and the curing start temperature of the anisotropic conductive adhesive for a suitable time in a state of being pressed against the part, and thereby the first electronic component. By expanding the air in the void formed around the step such as the bump on the surface of the air, the air is moved to the outside of the connecting portion between the electrode of the first electronic component and the electrode of the second electronic component. Discharge. Next, in the second heating step, the anisotropic conductive adhesive is heated at a temperature at which it cures to completely cure the anisotropic conductive adhesive and fix the connection portion. By these two steps of heating, voids remaining around the steps such as the bumps are reduced, so that the anisotropic conductive adhesive connects the electrode of the first electronic component and the electrode of the second electronic component. It is possible to reduce the amount of protrusion of the anisotropic conductive adhesive without being cured while being pushed out of the portion. Therefore, it is possible to improve the reliability of the connection state between the first electronic component and the second electronic component via the anisotropic conductive adhesive.

【0015】第2の発明によれば、電子部品の接続装置
において、第1の電子部品の電極と第2の電子部品の電
極とを対向させる位置合わせ手段と、異方導電性接着剤
が被着された前記第1の電子部品を前記第2の電子部品
に圧接した状態で該異方導電性接着剤を該異方導電性接
着剤の軟化開始温度から硬化開始温度の間の温度で所定
の時間加熱した後、該異方導電性接着剤を該異方導電性
接着剤が硬化する温度で所定の時間加熱する加熱手段と
を備えたので、前記第1の電子部品の電極と前記第2の
電子部品の電極とがそれらの接続部にボイドが残留しな
い状態で接続される。そのため、異方導電性接着剤が前
記第1の電子部品の電極と前記第2の電子部品の電極と
の接続部外に押し出された状態で硬化してしまうことが
なく、異方導電性接着剤のはみ出し量を低減することが
でき、該異方導電性接着剤を介した前記第1の電子部品
の電極と前記第2の電子部品の電極との接続状態の信頼
性を向上できる。
According to the second aspect of the invention, in the electronic component connecting device, the alignment means for facing the electrode of the first electronic component and the electrode of the second electronic component and the anisotropic conductive adhesive are covered. The anisotropic conductive adhesive is fixed at a temperature between the softening start temperature and the curing start temperature of the anisotropic conductive adhesive in a state where the attached first electronic component is pressed against the second electronic component. Heating means for heating the anisotropically conductive adhesive for a predetermined time at a temperature at which the anisotropically conductive adhesive cures. The electrodes of the second electronic component are connected to each other in the state where no void remains at their connecting portions. Therefore, the anisotropic conductive adhesive does not cure while being pushed out of the connection portion between the electrode of the first electronic component and the electrode of the second electronic component, and the anisotropic conductive adhesive The protruding amount of the agent can be reduced, and the reliability of the connection state between the electrode of the first electronic component and the electrode of the second electronic component via the anisotropic conductive adhesive can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施形態の電子部品の接続方法の工程
図である。
FIG. 1 is a process drawing of an electronic component connecting method according to an embodiment of the present invention.

【図2】従来の電子部品の接続方法の工程図である。FIG. 2 is a process diagram of a conventional method for connecting electronic components.

【符号の説明】[Explanation of symbols]

1,15 回路基板(電子部
品) 1a,2a,12a,15a 電極 2,12 半導体チップ(電子
部品) 3,13 異方導電性フィルム
(異方導電性接着剤) 11 ツール(加熱手段)
1,15 Circuit board (electronic component) 1a, 2a, 12a, 15a Electrode 2,12 Semiconductor chip (electronic component) 3,13 Anisotropic conductive film (anisotropic conductive adhesive) 11 Tool (heating means)

───────────────────────────────────────────────────── フロントページの続き (72)発明者 北山 憂子 東京都港区虎ノ門1丁目7番12号 沖電気 工業株式会社内 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Yuko Kitayama 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 第1の電子部品の電極を熱硬化性の異方
導電性接着剤を用いて第2の電子部品の電極に接続する
電子部品の接続方法において、 前記第1の電子部品の電極と前記第2の電子部品の電極
とを対向させる位置合わせ工程と、 前記異方導電性接着剤が被着された前記第1の電子部品
を前記第2の電子部品に圧接した状態で該異方導電性接
着剤を該異方導電性接着剤の軟化開始温度から硬化開始
温度の間の温度で所定の時間加熱する第1の加熱工程
と、 前記異方導電性接着剤を該異方導電性接着剤が硬化する
温度で所定の時間加熱する第2の加熱工程とを、 順に行うことを特徴とする電子部品の接続方法。
1. A method of connecting an electronic component, wherein the electrode of the first electronic component is connected to the electrode of the second electronic component by using a thermosetting anisotropic conductive adhesive, comprising: A step of aligning an electrode and an electrode of the second electronic component so as to face each other; and the first electronic component to which the anisotropic conductive adhesive is adhered is pressed against the second electronic component. A first heating step of heating the anisotropic conductive adhesive at a temperature between a softening start temperature and a curing start temperature of the anisotropic conductive adhesive for a predetermined time; And a second heating step of heating at a temperature at which the conductive adhesive is cured for a predetermined time, in order.
【請求項2】 第1の電子部品の電極を熱硬化性の異方
導電性接着剤を介して第2の電子部品の電極に接続する
電子部品の接続装置において、 前記第1の電子部品の電極と前記第2の電子部品の電極
とを対向させる位置合わせ手段と、 前記異方導電性接着剤が被着された前記第1の電子部品
を前記第2の電子部品に圧接した状態で該異方導電性接
着剤を該異方導電性接着剤の軟化開始温度から硬化開始
温度の間の温度で所定の時間加熱した後、該異方導電性
接着剤を該異方導電性接着剤が硬化する温度で所定の時
間加熱する加熱手段とを、 備えたことを特徴とする電子部品の接続装置。
2. An electronic component connecting device for connecting an electrode of a first electronic component to an electrode of a second electronic component via a thermosetting anisotropic conductive adhesive, comprising: Positioning means for facing an electrode and an electrode of the second electronic component to each other, and the first electronic component to which the anisotropic conductive adhesive is applied, in a state of being pressed against the second electronic component. After heating the anisotropic conductive adhesive at a temperature between the softening start temperature and the curing start temperature of the anisotropic conductive adhesive for a predetermined time, the anisotropic conductive adhesive is converted into the anisotropic conductive adhesive. A connecting device for electronic parts, comprising: a heating means for heating at a curing temperature for a predetermined time.
JP2555796A 1996-02-13 1996-02-13 Connecting method and device of electronic part Withdrawn JPH09219579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2555796A JPH09219579A (en) 1996-02-13 1996-02-13 Connecting method and device of electronic part

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2555796A JPH09219579A (en) 1996-02-13 1996-02-13 Connecting method and device of electronic part

Publications (1)

Publication Number Publication Date
JPH09219579A true JPH09219579A (en) 1997-08-19

Family

ID=12169252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2555796A Withdrawn JPH09219579A (en) 1996-02-13 1996-02-13 Connecting method and device of electronic part

Country Status (1)

Country Link
JP (1) JPH09219579A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0966031A3 (en) * 1998-06-16 2000-05-10 Shinko Electric Industries Co. Ltd. Substrate for mounting a semiconductor chip
WO2000045431A1 (en) * 1999-01-27 2000-08-03 Citizen Watch Co., Ltd. Method of packaging semiconductor device using anisotropic conductive adhesive
JP2001168505A (en) * 1999-12-09 2001-06-22 Matsushita Electric Ind Co Ltd Mounting method of work with bump
WO2009041235A1 (en) * 2007-09-27 2009-04-02 Sony Chemical & Information Device Corporation Electronic part mounting method and device
US7560819B2 (en) 1998-07-01 2009-07-14 Seiko Epson Corporation Semiconductor device and method of manufacture thereof, circuit board and electronic instrument
WO2023048148A1 (en) * 2021-09-22 2023-03-30 デクセリアルズ株式会社 Manufacturing method for connection structure

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0966031A3 (en) * 1998-06-16 2000-05-10 Shinko Electric Industries Co. Ltd. Substrate for mounting a semiconductor chip
US6281567B1 (en) 1998-06-16 2001-08-28 Shinko Electric Industries Co., Ltd. Substrate for mounting semiconductor chip with parallel conductive lines
US7560819B2 (en) 1998-07-01 2009-07-14 Seiko Epson Corporation Semiconductor device and method of manufacture thereof, circuit board and electronic instrument
US7868466B2 (en) 1998-07-01 2011-01-11 Seiko Epson Corporation Semiconductor device and method of manufacture thereof, circuit board and electronic instrument
WO2000045431A1 (en) * 1999-01-27 2000-08-03 Citizen Watch Co., Ltd. Method of packaging semiconductor device using anisotropic conductive adhesive
EP1067598A4 (en) * 1999-01-27 2001-10-24 Citizen Watch Co Ltd Method of packaging semiconductor device using anisotropic conductive adhesive
US6498051B1 (en) 1999-01-27 2002-12-24 Citizen Watch Co., Ltd. Method of packaging semiconductor device using anisotropic conductive adhesive
KR100382759B1 (en) * 1999-01-27 2003-05-09 시티즌 도케이 가부시키가이샤 Method of packaging semiconductor device using anisotropic conductive adhesive
JP2001168505A (en) * 1999-12-09 2001-06-22 Matsushita Electric Ind Co Ltd Mounting method of work with bump
WO2009041235A1 (en) * 2007-09-27 2009-04-02 Sony Chemical & Information Device Corporation Electronic part mounting method and device
JP2009081337A (en) * 2007-09-27 2009-04-16 Sony Chemical & Information Device Corp Method and apparatus for mounting electronic component
WO2023048148A1 (en) * 2021-09-22 2023-03-30 デクセリアルズ株式会社 Manufacturing method for connection structure

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