JP1712327S - 半導体素子 - Google Patents
半導体素子Info
- Publication number
- JP1712327S JP1712327S JP2021015110F JP2021015110F JP1712327S JP 1712327 S JP1712327 S JP 1712327S JP 2021015110 F JP2021015110 F JP 2021015110F JP 2021015110 F JP2021015110 F JP 2021015110F JP 1712327 S JP1712327 S JP 1712327S
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title 1
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20210029133 | 2021-06-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP1712327S true JP1712327S (ja) | 2022-04-12 |
Family
ID=81187674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021015110F Active JP1712327S (ja) | 2021-06-18 | 2021-07-12 | 半導体素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | USD989013S1 (ja) |
JP (1) | JP1712327S (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD973030S1 (en) * | 2021-02-23 | 2022-12-20 | Dong Woon Anatech Co., Ltd | Semiconductor device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD523403S1 (en) * | 2004-09-09 | 2006-06-20 | Kabushiki Kaisha Toshiba | Substrate for a semiconductor device |
USD574778S1 (en) * | 2005-08-31 | 2008-08-12 | Ati Technologies Inc. | Domino-mahjong style connector |
JP2008066655A (ja) * | 2006-09-11 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 半導体装置、半導体装置の製造方法、及び電気機器システム |
KR101184375B1 (ko) * | 2010-05-10 | 2012-09-20 | 매그나칩 반도체 유한회사 | 패드 영역의 크랙 발생을 방지하는 반도체 장치 및 그 제조 방법 |
US20140311569A1 (en) * | 2013-04-23 | 2014-10-23 | Huey-Liang Hwang | Solar cell with omnidirectional anti-reflection structure and method for fabricating the same |
JP7160492B2 (ja) * | 2018-06-18 | 2022-10-25 | イーエルシー マネージメント エルエルシー | 光安定化化合物、組成物、及び方法 |
USD933618S1 (en) * | 2018-10-31 | 2021-10-19 | Asahi Kasei Microdevices Corporation | Semiconductor module |
USD973030S1 (en) * | 2021-02-23 | 2022-12-20 | Dong Woon Anatech Co., Ltd | Semiconductor device |
-
2021
- 2021-07-12 JP JP2021015110F patent/JP1712327S/ja active Active
- 2021-08-02 US US29/801,963 patent/USD989013S1/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD973030S1 (en) * | 2021-02-23 | 2022-12-20 | Dong Woon Anatech Co., Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
USD989013S1 (en) | 2023-06-13 |
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