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KR102153413B9 - 반도체 패키지 - Google Patents

반도체 패키지

Info

Publication number
KR102153413B9
KR102153413B9 KR1020190038611A KR20190038611A KR102153413B9 KR 102153413 B9 KR102153413 B9 KR 102153413B9 KR 1020190038611 A KR1020190038611 A KR 1020190038611A KR 20190038611 A KR20190038611 A KR 20190038611A KR 102153413 B9 KR102153413 B9 KR 102153413B9
Authority
KR
South Korea
Prior art keywords
semiconductor package
package
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190038611A
Other languages
English (en)
Other versions
KR102153413B1 (ko
KR20200079159A (ko
Inventor
조창용
한종호
정기조
김종헌
Original Assignee
주식회사 네패스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 네패스 filed Critical 주식회사 네패스
Priority to KR1020190038611A priority Critical patent/KR102153413B1/ko
Priority to CN201911338310.3A priority patent/CN111354700A/zh
Priority to US16/724,889 priority patent/US11276632B2/en
Priority to TW108147467A priority patent/TWI788614B/zh
Publication of KR20200079159A publication Critical patent/KR20200079159A/ko
Application granted granted Critical
Publication of KR102153413B1 publication Critical patent/KR102153413B1/ko
Publication of KR102153413B9 publication Critical patent/KR102153413B9/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
KR1020190038611A 2018-12-24 2019-04-02 반도체 패키지 Active KR102153413B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020190038611A KR102153413B1 (ko) 2018-12-24 2019-04-02 반도체 패키지
CN201911338310.3A CN111354700A (zh) 2018-12-24 2019-12-23 半导体封装件
US16/724,889 US11276632B2 (en) 2018-12-24 2019-12-23 Semiconductor package
TW108147467A TWI788614B (zh) 2018-12-24 2019-12-24 半導體封裝件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180168468 2018-12-24
KR1020190038611A KR102153413B1 (ko) 2018-12-24 2019-04-02 반도체 패키지

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020180168468 Division 2018-12-24 2018-12-24

Publications (3)

Publication Number Publication Date
KR20200079159A KR20200079159A (ko) 2020-07-02
KR102153413B1 KR102153413B1 (ko) 2020-09-08
KR102153413B9 true KR102153413B9 (ko) 2021-12-07

Family

ID=73004839

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190038611A Active KR102153413B1 (ko) 2018-12-24 2019-04-02 반도체 패키지

Country Status (2)

Country Link
KR (1) KR102153413B1 (ko)
TW (1) TWI788614B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112466838A (zh) * 2020-10-13 2021-03-09 日月光半导体制造股份有限公司 半导体封装结构及其制造方法
KR102570496B1 (ko) * 2021-04-27 2023-08-24 주식회사 네패스 반도체 패키지 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4327656B2 (ja) * 2004-05-20 2009-09-09 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP2008016514A (ja) * 2006-07-03 2008-01-24 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP2011165862A (ja) * 2010-02-09 2011-08-25 Sony Corp 半導体装置、チップ・オン・チップの実装構造、半導体装置の製造方法及びチップ・オン・チップの実装構造の形成方法
TWM397597U (en) * 2010-04-15 2011-02-01 Di-Quan Hu Package structure of integrated circuit
US20120098124A1 (en) * 2010-10-21 2012-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having under-bump metallization (ubm) structure and method of forming the same
US9082649B2 (en) * 2013-11-25 2015-07-14 Texas Instruments Incorporated Passivation process to prevent TiW corrosion
US20170179058A1 (en) * 2015-12-16 2017-06-22 Lite-On Semiconductor Corporation Bump structure having first portion of copper and second portion of pure tin covering the first portion, and interconnect structure using the same

Also Published As

Publication number Publication date
TWI788614B (zh) 2023-01-01
KR102153413B1 (ko) 2020-09-08
KR20200079159A (ko) 2020-07-02
TW202025403A (zh) 2020-07-01

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Legal Events

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PA0107 Divisional application

Comment text: Divisional Application of Patent

Patent event date: 20190402

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