[go: up one dir, main page]

EP4084064A4 - SEMICONDUCTOR COMPONENT - Google Patents

SEMICONDUCTOR COMPONENT Download PDF

Info

Publication number
EP4084064A4
EP4084064A4 EP20905852.8A EP20905852A EP4084064A4 EP 4084064 A4 EP4084064 A4 EP 4084064A4 EP 20905852 A EP20905852 A EP 20905852A EP 4084064 A4 EP4084064 A4 EP 4084064A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP20905852.8A
Other languages
German (de)
French (fr)
Other versions
EP4084064A1 (en
EP4084064B1 (en
Inventor
Nobuo Machida
Kohei Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tamura Corp
Novel Crystal Technology Inc
Original Assignee
Tamura Corp
Novel Crystal Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tamura Corp, Novel Crystal Technology Inc filed Critical Tamura Corp
Publication of EP4084064A1 publication Critical patent/EP4084064A1/en
Publication of EP4084064A4 publication Critical patent/EP4084064A4/en
Application granted granted Critical
Publication of EP4084064B1 publication Critical patent/EP4084064B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)
EP20905852.8A 2019-12-26 2020-12-21 Semiconductor device Active EP4084064B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019236007A JP7391326B2 (en) 2019-12-26 2019-12-26 semiconductor equipment
PCT/JP2020/047652 WO2021132144A1 (en) 2019-12-26 2020-12-21 Semiconductor device

Publications (3)

Publication Number Publication Date
EP4084064A1 EP4084064A1 (en) 2022-11-02
EP4084064A4 true EP4084064A4 (en) 2024-01-24
EP4084064B1 EP4084064B1 (en) 2024-12-04

Family

ID=76574754

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20905852.8A Active EP4084064B1 (en) 2019-12-26 2020-12-21 Semiconductor device

Country Status (5)

Country Link
US (1) US20230034806A1 (en)
EP (1) EP4084064B1 (en)
JP (1) JP7391326B2 (en)
CN (1) CN114846593A (en)
WO (1) WO2021132144A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020014919A (en) * 2019-10-31 2020-01-30 株式会社三洋物産 Game machine
JP2020014971A (en) * 2019-11-06 2020-01-30 株式会社三洋物産 Game machine
DE102023203781A1 (en) * 2023-04-25 2024-10-31 Zf Friedrichshafen Ag Semiconductor device, semiconductor apparatus and method for manufacturing a semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3540784A1 (en) * 2016-11-09 2019-09-18 TDK Corporation Schottky barrier diode and electronic circuit provided with same

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214368A (en) * 2002-12-27 2004-07-29 Matsushita Electric Ind Co Ltd Semiconductor device
JP4670034B2 (en) * 2004-03-12 2011-04-13 学校法人早稲田大学 Ga2O3-based semiconductor layer provided with electrodes
JP5044986B2 (en) * 2006-05-17 2012-10-10 サンケン電気株式会社 Semiconductor light emitting device
JP2008085190A (en) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd Semiconductor device
CN201011655Y (en) * 2007-01-10 2008-01-23 上海凯虹科技电子有限公司 Large power semiconductor device frame
US9111778B2 (en) * 2009-06-05 2015-08-18 Cree, Inc. Light emitting diode (LED) devices, systems, and methods
US8866267B2 (en) * 2010-05-28 2014-10-21 Alpha & Omega Semiconductor, Inc. Semiconductor device with substrate-side exposed device-side electrode and method of fabrication
JP5333479B2 (en) * 2011-02-15 2013-11-06 住友電気工業株式会社 Manufacturing method of semiconductor device
EP2754738B1 (en) * 2011-09-08 2021-07-07 Tamura Corporation Schottky-barrier diode
JP2013102081A (en) * 2011-11-09 2013-05-23 Tamura Seisakusho Co Ltd Schottky barrier diode
US8786111B2 (en) * 2012-05-14 2014-07-22 Infineon Technologies Ag Semiconductor packages and methods of formation thereof
US9147628B2 (en) * 2012-06-27 2015-09-29 Infineon Technoloiges Austria AG Package-in-packages and methods of formation thereof
US9478484B2 (en) * 2012-10-19 2016-10-25 Infineon Technologies Austria Ag Semiconductor packages and methods of formation thereof
US8916474B2 (en) * 2013-02-18 2014-12-23 Infineon Technologies Ag Semiconductor modules and methods of formation thereof
JP6479308B2 (en) * 2013-08-09 2019-03-06 ソニー株式会社 Surface emitting laser element and method for manufacturing the same
JP6183045B2 (en) * 2013-08-09 2017-08-23 ソニー株式会社 Light emitting device and manufacturing method thereof
JP2015035543A (en) * 2013-08-09 2015-02-19 ソニー株式会社 Light emitting element manufacturing method
EP2851946A1 (en) * 2013-09-19 2015-03-25 Nxp B.V. Surge protection device
JP6176069B2 (en) * 2013-11-13 2017-08-09 住友電気工業株式会社 Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, group III nitride semiconductor device and method for manufacturing the same
TWI593067B (en) * 2014-02-26 2017-07-21 林朋科技股份有限公司 Semiconductor package structure
JP2015164162A (en) * 2014-02-28 2015-09-10 株式会社タムラ製作所 semiconductor laminated structure and semiconductor element
JP6758569B2 (en) * 2015-03-20 2020-09-23 株式会社タムラ製作所 High withstand voltage Schottky barrier diode
DE102015109876A1 (en) * 2015-06-19 2016-12-22 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component and optoelectronic component
JP2017045969A (en) * 2015-08-28 2017-03-02 株式会社タムラ製作所 Schottky barrier diode
TWI660505B (en) * 2015-12-18 2019-05-21 日商Ｆｌｏｓｆｉａ股份有限公司 Semiconductor device
JP6809334B2 (en) * 2017-03-29 2021-01-06 Tdk株式会社 Semiconductor devices and their manufacturing methods
CN110504327B (en) * 2018-05-17 2020-12-22 中国科学院苏州纳米技术与纳米仿生研究所 Ballistic transport Schottky diodes based on nanoarrays and their fabrication methods
DE102018116051A1 (en) * 2018-07-03 2020-01-09 Infineon Technologies Ag SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
JP6563093B1 (en) * 2018-08-10 2019-08-21 ローム株式会社 SiC semiconductor device
JP7315136B2 (en) * 2018-12-26 2023-07-26 株式会社Flosfia crystalline oxide semiconductor
JP7315137B2 (en) * 2018-12-26 2023-07-26 株式会社Flosfia crystalline oxide film
KR102275146B1 (en) * 2019-05-20 2021-07-08 파워큐브세미 (주) Schottky diode and method for fabricating the same
US11521917B2 (en) * 2019-05-23 2022-12-06 Rohm Co., Ltd. Semiconductor device
CN110265486B (en) * 2019-06-20 2023-03-24 中国电子科技集团公司第十三研究所 Gallium oxide SBD terminal structure and preparation method
JP7612145B2 (en) * 2019-10-03 2025-01-14 株式会社Flosfia Semiconductor Device
WO2021066137A1 (en) * 2019-10-03 2021-04-08 株式会社Flosfia Semiconductor element and semiconductor device
JP7530615B2 (en) * 2020-01-10 2024-08-08 株式会社Flosfia Crystal, semiconductor element and semiconductor device
US20240021669A1 (en) * 2022-07-12 2024-01-18 Flosfia Inc. Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3540784A1 (en) * 2016-11-09 2019-09-18 TDK Corporation Schottky barrier diode and electronic circuit provided with same

Also Published As

Publication number Publication date
EP4084064A1 (en) 2022-11-02
JP7391326B2 (en) 2023-12-05
US20230034806A1 (en) 2023-02-02
WO2021132144A1 (en) 2021-07-01
CN114846593A (en) 2022-08-02
EP4084064B1 (en) 2024-12-04
JP2021106190A (en) 2021-07-26

Similar Documents

Publication Publication Date Title
EP3629379A4 (en) GA2O3-BASED SEMICONDUCTOR COMPONENT
EP3678190A4 (en) SEMICONDUCTOR COMPONENT
EP3561886A4 (en) SEMICONDUCTOR COMPONENT
EP3576166A4 (en) SEMICONDUCTOR COMPONENT
EP3696925A4 (en) SEMICONDUCTOR LASER
EP3828921A4 (en) SEMICONDUCTOR COMPONENT
EP3608972A4 (en) SEMICONDUCTOR COMPONENT
EP3817039A4 (en) SEMICONDUCTOR COMPONENT
EP3540793A4 (en) SEMICONDUCTOR COMPONENT
EP3916806A4 (en) SEMICONDUCTOR DEVICE
EP3948939A4 (en) SEMICONDUCTOR FLIPPERS
JPWO2020104885A5 (en) semiconductor equipment
EP3751738A4 (en) SEMICONDUCTOR COMPONENT
EP3748688A4 (en) SEMICONDUCTOR COMPONENT
KR102304963B9 (en) semiconductor package
EP4084064A4 (en) SEMICONDUCTOR COMPONENT
JPWO2019197946A5 (en) Semiconductor device
EP3654385A4 (en) SEMICONDUCTOR COMPONENT
EP3584834A4 (en) SEMICONDUCTOR COMPONENT
EP3616244A4 (en) SEMICONDUCTOR NANOCRISTALS
EP3605593A4 (en) SEMICONDUCTOR COMPONENT
EP3605592A4 (en) SEMICONDUCTOR COMPONENT
EP3872876A4 (en) SEMICONDUCTOR COMPONENT
DE112020001972A5 (en) Optoelectronic semiconductor component
JPWO2020084399A5 (en) semiconductor equipment

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20220726

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20231221

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 29/06 20060101ALI20231215BHEP

Ipc: H01L 29/40 20060101ALI20231215BHEP

Ipc: H01L 29/417 20060101ALI20231215BHEP

Ipc: H01L 29/24 20060101ALI20231215BHEP

Ipc: H01L 23/495 20060101ALI20231215BHEP

Ipc: H01L 29/872 20060101ALI20231215BHEP

Ipc: H01L 21/60 20060101ALI20231215BHEP

Ipc: H01L 23/50 20060101AFI20231215BHEP

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20240625

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602020042788

Country of ref document: DE

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D