IT8141672A1 - Convertitore di radiazione elettromagnetica in segnale elettrico - Google Patents
Convertitore di radiazione elettromagnetica in segnale elettricoInfo
- Publication number
- IT8141672A1 IT8141672A1 IT1981A41672A IT4167281A IT8141672A1 IT 8141672 A1 IT8141672 A1 IT 8141672A1 IT 1981A41672 A IT1981A41672 A IT 1981A41672A IT 4167281 A IT4167281 A IT 4167281A IT 8141672 A1 IT8141672 A1 IT 8141672A1
- Authority
- IT
- Italy
- Prior art keywords
- electric signal
- electromagnetic radiation
- radiation converter
- converter
- electromagnetic
- Prior art date
Links
- 230000005670 electromagnetic radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU802995104A SU915683A1 (ru) | 1980-10-23 | 1980-10-23 | ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT8141672A0 IT8141672A0 (it) | 1981-10-22 |
| IT8141672A1 true IT8141672A1 (it) | 1983-04-22 |
| IT1168456B IT1168456B (it) | 1987-05-20 |
Family
ID=20922673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT41672/81A IT1168456B (it) | 1980-10-23 | 1981-10-22 | Convertitore di radiazione elettromagnetica in segnale elettrico |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS57103372A (it) |
| DE (1) | DE3141956A1 (it) |
| FR (1) | FR2493046B1 (it) |
| GB (1) | GB2087645B (it) |
| IT (1) | IT1168456B (it) |
| SU (1) | SU915683A1 (it) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59115A (ja) * | 1982-06-25 | 1984-01-05 | Nippon Telegr & Teleph Corp <Ntt> | 光フアイバの融着接続方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1044494A (en) * | 1965-04-07 | 1966-09-28 | Mullard Ltd | Improvements in and relating to semiconductor devices |
| SE331864B (it) * | 1969-05-30 | 1971-01-18 | Inst Halvledarforskning Ab | |
| FR2137184B1 (it) * | 1971-05-14 | 1976-03-19 | Commissariat Energie Atomique | |
| US4016586A (en) * | 1974-03-27 | 1977-04-05 | Innotech Corporation | Photovoltaic heterojunction device employing a wide bandgap material as an active layer |
| JPS6047752B2 (ja) * | 1975-08-20 | 1985-10-23 | 松下電器産業株式会社 | 擦像管タ−ゲット |
| GB1553684A (en) * | 1976-08-20 | 1979-09-26 | Matsushita Electric Ind Co Ltd | Photoconductive devices |
| US4176275A (en) * | 1977-08-22 | 1979-11-27 | Minnesota Mining And Manufacturing Company | Radiation imaging and readout system and method utilizing a multi-layered device having a photoconductive insulative layer |
-
1980
- 1980-10-23 SU SU802995104A patent/SU915683A1/ru active
-
1981
- 1981-10-14 GB GB8130947A patent/GB2087645B/en not_active Expired
- 1981-10-22 JP JP16938581A patent/JPS57103372A/ja active Granted
- 1981-10-22 IT IT41672/81A patent/IT1168456B/it active
- 1981-10-22 DE DE19813141956 patent/DE3141956A1/de active Granted
- 1981-10-23 FR FR8119988A patent/FR2493046B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SU915683A1 (ru) | 1985-10-23 |
| JPS57103372A (en) | 1982-06-26 |
| GB2087645B (en) | 1984-12-05 |
| FR2493046A1 (fr) | 1982-04-30 |
| GB2087645A (en) | 1982-05-26 |
| IT8141672A0 (it) | 1981-10-22 |
| DE3141956C2 (it) | 1989-09-07 |
| FR2493046B1 (fr) | 1985-11-15 |
| JPS6328502B2 (it) | 1988-06-08 |
| IT1168456B (it) | 1987-05-20 |
| DE3141956A1 (de) | 1982-06-16 |
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