GB1044494A - Improvements in and relating to semiconductor devices - Google Patents
Improvements in and relating to semiconductor devicesInfo
- Publication number
- GB1044494A GB1044494A GB14739/65A GB1473965A GB1044494A GB 1044494 A GB1044494 A GB 1044494A GB 14739/65 A GB14739/65 A GB 14739/65A GB 1473965 A GB1473965 A GB 1473965A GB 1044494 A GB1044494 A GB 1044494A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- relating
- semiconductor devices
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000463 material Substances 0.000 abstract 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
1,044,494. Semi - conductor devices. MULLARD Ltd. Aug. 19, 1965 [April 7, 1966], No. 14739/65. Heading H1K. A photo-electric semi-conductor diode contains a heterojunction between a first semiconductor material and a second semi-conductor material of lower energy gap than the first, with a PN junction and substantially the whole of its depletion region lying within the second material. In the embodiments described, the first material is gallium arseno-phosphide epitaxially deposited on the second material, which is gallium arsenide, tin and zinc being employed as doping elements.
Priority Applications (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB14739/65A GB1044494A (en) | 1965-04-07 | 1965-04-07 | Improvements in and relating to semiconductor devices |
US479546A US3363155A (en) | 1964-08-19 | 1965-08-13 | Opto-electronic transistor with a base-collector junction spaced from the material heterojunction |
DE19651514269 DE1514269A1 (en) | 1964-08-19 | 1965-08-16 | Opto-electronic transistor |
SE10698/65A SE325348B (en) | 1964-08-19 | 1965-08-16 | |
DEN27196A DE1298209B (en) | 1964-08-19 | 1965-08-17 | Photoelectric semiconductor diode |
NL6510725A NL6510725A (en) | 1964-08-19 | 1965-08-17 | |
NL6510721A NL6510721A (en) | 1964-08-19 | 1965-08-17 | |
FR28808A FR1443843A (en) | 1964-08-19 | 1965-08-19 | Semiconductor photodiode |
FR28804A FR1443840A (en) | 1964-08-19 | 1965-08-19 | Optical-electronic effect transistor |
BE668535A BE668535A (en) | 1964-08-19 | 1965-08-19 | |
BE668537A BE668537A (en) | 1964-08-19 | 1965-08-19 | |
US750997A US3508126A (en) | 1964-08-19 | 1968-07-18 | Semiconductor photodiode with p-n junction spaced from heterojunction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB14739/65A GB1044494A (en) | 1965-04-07 | 1965-04-07 | Improvements in and relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1044494A true GB1044494A (en) | 1966-09-28 |
Family
ID=10046626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB14739/65A Expired GB1044494A (en) | 1964-08-19 | 1965-04-07 | Improvements in and relating to semiconductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1044494A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2631744A1 (en) * | 1975-07-28 | 1977-02-10 | Philips Nv | OPTOELECTRONIC REVERSIBLE SEMICONDUCTOR ARRANGEMENT |
FR2493046A1 (en) * | 1980-10-23 | 1982-04-30 | Fizichesky Inst Im Pn Leb | ELECTROMAGNETIC RADIATION TO ELECTRIC SIGNAL CONVERTER |
-
1965
- 1965-04-07 GB GB14739/65A patent/GB1044494A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2631744A1 (en) * | 1975-07-28 | 1977-02-10 | Philips Nv | OPTOELECTRONIC REVERSIBLE SEMICONDUCTOR ARRANGEMENT |
FR2493046A1 (en) * | 1980-10-23 | 1982-04-30 | Fizichesky Inst Im Pn Leb | ELECTROMAGNETIC RADIATION TO ELECTRIC SIGNAL CONVERTER |
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