FR2493046B1 - Convertisseur de rayonnement electromagnetique en signal electrique - Google Patents
Convertisseur de rayonnement electromagnetique en signal electriqueInfo
- Publication number
- FR2493046B1 FR2493046B1 FR8119988A FR8119988A FR2493046B1 FR 2493046 B1 FR2493046 B1 FR 2493046B1 FR 8119988 A FR8119988 A FR 8119988A FR 8119988 A FR8119988 A FR 8119988A FR 2493046 B1 FR2493046 B1 FR 2493046B1
- Authority
- FR
- France
- Prior art keywords
- electric signal
- electromagnetic radiation
- signal converter
- converter
- electromagnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005670 electromagnetic radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU802995104A SU915683A1 (ru) | 1980-10-23 | 1980-10-23 | ПРЕОБРАЗОВАТЕЛЬ ОПТИЧЕСКОГО ИЗЛУЧЕНИЯ в электрический сигнал на основе структуры |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2493046A1 FR2493046A1 (fr) | 1982-04-30 |
| FR2493046B1 true FR2493046B1 (fr) | 1985-11-15 |
Family
ID=20922673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8119988A Expired FR2493046B1 (fr) | 1980-10-23 | 1981-10-23 | Convertisseur de rayonnement electromagnetique en signal electrique |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS57103372A (fr) |
| DE (1) | DE3141956A1 (fr) |
| FR (1) | FR2493046B1 (fr) |
| GB (1) | GB2087645B (fr) |
| IT (1) | IT1168456B (fr) |
| SU (1) | SU915683A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59115A (ja) * | 1982-06-25 | 1984-01-05 | Nippon Telegr & Teleph Corp <Ntt> | 光フアイバの融着接続方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1044494A (en) * | 1965-04-07 | 1966-09-28 | Mullard Ltd | Improvements in and relating to semiconductor devices |
| SE331864B (fr) * | 1969-05-30 | 1971-01-18 | Inst Halvledarforskning Ab | |
| FR2137184B1 (fr) * | 1971-05-14 | 1976-03-19 | Commissariat Energie Atomique | |
| US4016586A (en) * | 1974-03-27 | 1977-04-05 | Innotech Corporation | Photovoltaic heterojunction device employing a wide bandgap material as an active layer |
| JPS6047752B2 (ja) * | 1975-08-20 | 1985-10-23 | 松下電器産業株式会社 | 擦像管タ−ゲット |
| GB1553684A (en) * | 1976-08-20 | 1979-09-26 | Matsushita Electric Ind Co Ltd | Photoconductive devices |
| US4176275A (en) * | 1977-08-22 | 1979-11-27 | Minnesota Mining And Manufacturing Company | Radiation imaging and readout system and method utilizing a multi-layered device having a photoconductive insulative layer |
-
1980
- 1980-10-23 SU SU802995104A patent/SU915683A1/ru active
-
1981
- 1981-10-14 GB GB8130947A patent/GB2087645B/en not_active Expired
- 1981-10-22 JP JP16938581A patent/JPS57103372A/ja active Granted
- 1981-10-22 IT IT41672/81A patent/IT1168456B/it active
- 1981-10-22 DE DE19813141956 patent/DE3141956A1/de active Granted
- 1981-10-23 FR FR8119988A patent/FR2493046B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SU915683A1 (ru) | 1985-10-23 |
| JPS57103372A (en) | 1982-06-26 |
| GB2087645B (en) | 1984-12-05 |
| FR2493046A1 (fr) | 1982-04-30 |
| IT8141672A1 (it) | 1983-04-22 |
| GB2087645A (en) | 1982-05-26 |
| IT8141672A0 (it) | 1981-10-22 |
| DE3141956C2 (fr) | 1989-09-07 |
| JPS6328502B2 (fr) | 1988-06-08 |
| IT1168456B (it) | 1987-05-20 |
| DE3141956A1 (de) | 1982-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IT1098074B (it) | Dispositivo separatore di segnali elettrici | |
| DK204283D0 (da) | Elektrisk effektkonverterkredsloeb | |
| FR2479569B1 (fr) | Dispositif de conversion de rayonnement electromagnetique en courant electrique | |
| DK25981A (da) | Fugtighedsbeskyttet elektrisk energikabel | |
| DK119578A (da) | Staerkstroemskabel | |
| BR8102895A (pt) | Concentrador refletor de radiacoes eletromagneticas | |
| DK165086C (da) | Effektomformningskredsloeb | |
| ES506650A0 (es) | Disyuntor electrico de autosoplado | |
| FI810343L (fi) | Spolkropp foer elektriska spolar | |
| ES260661Y (es) | Conjunto de cable electrico | |
| AT371921B (de) | Elektroofen | |
| BE884492A (fr) | Convertisseur electrique | |
| IT1128035B (it) | Elettroserratura | |
| FR2493046B1 (fr) | Convertisseur de rayonnement electromagnetique en signal electrique | |
| ES498293A0 (es) | Generador de senales electricas | |
| FI811997L (fi) | Elektriskt kvartsur | |
| JPS558194A (en) | Electric signal level converter | |
| FR2497033B1 (fr) | Attenuateur pour signal electrique | |
| DK204383D0 (da) | Elektrisk effektkonverterkredsloeb | |
| FI812955L (fi) | Elektriska kablar | |
| KR830004319U (ko) | 전력개폐장치 | |
| ES259199Y (es) | Cable electrico encintado | |
| BR8102184A (pt) | Conversor eletrico | |
| BR7804396A (pt) | Uniao vedada de capas de condutores eletricos | |
| JPS53113485A (en) | Electric signalltoophoto signal converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |