GB755422A - An improved method for the production of single crystals of semi-conductor materials - Google Patents
An improved method for the production of single crystals of semi-conductor materialsInfo
- Publication number
- GB755422A GB755422A GB952/54A GB95254A GB755422A GB 755422 A GB755422 A GB 755422A GB 952/54 A GB952/54 A GB 952/54A GB 95254 A GB95254 A GB 95254A GB 755422 A GB755422 A GB 755422A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystal
- melt
- impurity
- concentration
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
When growing a single crystal of semiconductor material, e.g of silicon or germanium, of uniform conductivity along its length, by pulling a seed crystal from a melt, the concentration of impurity centres in the crystal is maintained constant by maintaining the volume of melt constant by the addition of material which is basically the same as the melt and preferably has the same impurity concentration as the growing crystal. If the impurity concentration in the crystal is very low, as with indium or antimony in germanium, the added material may be of high purity. By this means the impurity concentration in the melt is maintained substantially constant instead of increasing with growth of the crystal. The added material may be solid, e.g. as powder or rod, or liquid. The growing crystal and/or crucible may be rotated and the molten mass in the crucible agitated, e.g. by supersonic vibrations. This prevents local concentration of impurity in the liquid at the point of growth. Specification 706,849 is referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE755422X | 1953-01-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB755422A true GB755422A (en) | 1956-08-22 |
Family
ID=6659622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB952/54A Expired GB755422A (en) | 1953-01-19 | 1954-01-13 | An improved method for the production of single crystals of semi-conductor materials |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB755422A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2977258A (en) * | 1958-04-09 | 1961-03-28 | Philco Corp | Production of semiconductors and the like |
| US3539305A (en) * | 1966-09-28 | 1970-11-10 | Siemens Ag | Zone refining method with plural supply rods |
| GB2147223A (en) * | 1983-10-01 | 1985-05-09 | Stc Plc | Semiconductor substrates |
| EP0149898A2 (en) * | 1983-12-24 | 1985-07-31 | Sumitomo Electric Industries Limited | An LEC method and apparatus for growing a single crystal of compound semiconductors |
| US5290395A (en) * | 1990-07-26 | 1994-03-01 | Sumitomo Electric Industries, Ltd. | Method of and apparatus for preparing single crystal |
-
1954
- 1954-01-13 GB GB952/54A patent/GB755422A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2977258A (en) * | 1958-04-09 | 1961-03-28 | Philco Corp | Production of semiconductors and the like |
| US3539305A (en) * | 1966-09-28 | 1970-11-10 | Siemens Ag | Zone refining method with plural supply rods |
| GB2147223A (en) * | 1983-10-01 | 1985-05-09 | Stc Plc | Semiconductor substrates |
| EP0149898A2 (en) * | 1983-12-24 | 1985-07-31 | Sumitomo Electric Industries Limited | An LEC method and apparatus for growing a single crystal of compound semiconductors |
| EP0149898A3 (en) * | 1983-12-24 | 1985-08-21 | Sumitomo Electric Industries Limited | An lec method and apparatus for growing a single crystal of compound semiconductors |
| US4973454A (en) * | 1983-12-24 | 1990-11-27 | Sumitomo Electric Industries Ltd. | LEC method and apparatus for growing a single crystal of compound semiconductors |
| US5290395A (en) * | 1990-07-26 | 1994-03-01 | Sumitomo Electric Industries, Ltd. | Method of and apparatus for preparing single crystal |
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