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GB761516A - Semi-conductor devices and methods of making same - Google Patents

Semi-conductor devices and methods of making same

Info

Publication number
GB761516A
GB761516A GB32142/54A GB3214254A GB761516A GB 761516 A GB761516 A GB 761516A GB 32142/54 A GB32142/54 A GB 32142/54A GB 3214254 A GB3214254 A GB 3214254A GB 761516 A GB761516 A GB 761516A
Authority
GB
United Kingdom
Prior art keywords
bismuth
germanium
zone
semi
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32142/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB761516A publication Critical patent/GB761516A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A semi-conductor body of N-type germanium or silicon comprises bismuth as the N type determining impurity and the ratio of impurity particles to particles of the semi-conductor material is substantially between the limits 1 to 107 and 1 to 109. The invention is dependent on the low values of the segregation coefficients of bismuth in germanium and silicon ensuring homogeneous distribution of bismuth and thus uniform resistivity throughout the semi-conductor. The known technique of vertical crystal pulling or zone melting may be used to produce the required semi-conductor bodies. In one manufacturing embodiment a germanium rod-ingot (50 x 2 x 2 cm.) having in an end cavity about 30 mg. of bismuth is contained in a crucible and a zone-melting furnace maintains melted at 960 DEG /1000 DEG C. for 5-15 minutes the bismuth-bearing zone (4.5 cm.) and subsequently the entire ingot is slowly melted as the molten zone progresses along the ingot at 1 mm. per minute. A large proportion of the 30 mg. of bismuth is contained in the last frozen 4.5 cm. zone and the minor proportion is distributed evenly throughout the remaining zones. If a single germanium crystal is required a germanium seed is placed adjacent the initial bismuth-bearing end. The last frozen 4.5 cm. zone may be used for making new ingots or crystals. Using 30 mg. of bismuth produces a resistivity of 3 ohm-cm. corresponding to 10-8 impurity concentration; if 0.1 or 10 ohm-cm. is the desired resistivity the weights of bismuth should be 900 mg. and 9 mg. respectively. If silicon is used instead of germanium the original zone is heated for 5-15 minutes at 1420 DEG C. before progressing the zone melting. The Specification includes alloy junction and point contact transistor constructions (Figs. 2 and 3, not shown), utilizing 0.1 ohm-cm. germanium. A graph (Fig. 1, not shown) is also referred to and this graph illustrates the uniformity in resistivity of bismuth-doped germanium by comparison with the non-uniformity in resistivity of antimony-doped germanium.
GB32142/54A 1953-12-01 1954-11-05 Semi-conductor devices and methods of making same Expired GB761516A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US395381A US2820185A (en) 1953-12-01 1953-12-01 Semi-conductor devices and methods of making same

Publications (1)

Publication Number Publication Date
GB761516A true GB761516A (en) 1956-11-14

Family

ID=23562796

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32142/54A Expired GB761516A (en) 1953-12-01 1954-11-05 Semi-conductor devices and methods of making same

Country Status (4)

Country Link
US (1) US2820185A (en)
BE (1) BE533765A (en)
FR (1) FR1111581A (en)
GB (1) GB761516A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1126997B (en) * 1957-08-09 1962-04-05 Rca Corp Semiconductor arrangements, in particular for switching purposes, and processes for their production
GB1074283A (en) * 1963-01-09 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2530110A (en) * 1944-06-02 1950-11-14 Sperry Corp Nonlinear circuit device utilizing germanium
BE466591A (en) * 1945-07-13

Also Published As

Publication number Publication date
FR1111581A (en) 1956-03-01
US2820185A (en) 1958-01-14
BE533765A (en)

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