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GB727678A - Semiconductive materials and the production thereof - Google Patents

Semiconductive materials and the production thereof

Info

Publication number
GB727678A
GB727678A GB16229/52A GB1622952A GB727678A GB 727678 A GB727678 A GB 727678A GB 16229/52 A GB16229/52 A GB 16229/52A GB 1622952 A GB1622952 A GB 1622952A GB 727678 A GB727678 A GB 727678A
Authority
GB
United Kingdom
Prior art keywords
rate
seed
crystal
withdrawal
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16229/52A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB727678A publication Critical patent/GB727678A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Semi-conductive single crystals of germanium or silicon are obtained by immersing a seed crystal in a molten mass of material to be crystallized and withdrawing the crystal at such a rate that the molten material crystallizes on the seed, the rate of withdrawal being varied during growth to produce a desired resistivity distribution in the crystal, e.g. being reduced in such a manner as to produce a zone of crystalline material of constant conductivity. When the withdrawal rate is being reduced it may be suddenly increased when the rate becomes zero and then gradually reduced again to produce a second zone of constant but lower resistivity than the first zone. To prevent undue increase in diameter, the rate of growth is simultaneously reduced as the withdrawal rate diminishes by increasing the temperature of the melt. Uniformity of growth is promoted by rotation of the seed and crystalline material and vibration in the line of withdrawal. The apparatus and other features of the method employed are generally as described in Specification 706,849, but an eccentric member bearing on the lifting wire to cause longitudinal vibration of the growing crystal, means for rotating the seed and means for supplying impurity material in solid, liquid or gaseous form to alter the conductivity character of the growing crystal along its length are provided. Specification 706,858 also is referred to.
GB16229/52A 1951-06-29 1952-06-27 Semiconductive materials and the production thereof Expired GB727678A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US727678XA 1951-06-29 1951-06-29

Publications (1)

Publication Number Publication Date
GB727678A true GB727678A (en) 1955-04-06

Family

ID=22109628

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16229/52A Expired GB727678A (en) 1951-06-29 1952-06-27 Semiconductive materials and the production thereof

Country Status (1)

Country Link
GB (1) GB727678A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2841509A (en) * 1955-04-27 1958-07-01 Rca Corp Method of doping semi-conductive material
US2852890A (en) * 1955-08-12 1958-09-23 Union Carbide Corp Synthetic unicrystalline bodies and methods for making same
US2999776A (en) * 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2999776A (en) * 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals
US2841509A (en) * 1955-04-27 1958-07-01 Rca Corp Method of doping semi-conductive material
US2852890A (en) * 1955-08-12 1958-09-23 Union Carbide Corp Synthetic unicrystalline bodies and methods for making same

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