[go: up one dir, main page]

GB779383A - Method of growing semi-conductors - Google Patents

Method of growing semi-conductors

Info

Publication number
GB779383A
GB779383A GB11853/55A GB1185355A GB779383A GB 779383 A GB779383 A GB 779383A GB 11853/55 A GB11853/55 A GB 11853/55A GB 1185355 A GB1185355 A GB 1185355A GB 779383 A GB779383 A GB 779383A
Authority
GB
United Kingdom
Prior art keywords
crystal
melt
impurities
grown
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB11853/55A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB779383A publication Critical patent/GB779383A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

<PICT:0779383/III/1> A method of growing semi-conductor crystals comprises immersing a seed crystal in a melt of semi-conductor material containing P, N or both types of impurities and withdrawing the seed crystal slowly to permit the material of the melt to freeze on the crystal, and includes the further step of applying an electric field across the combination of the melt, the freezing interface, and the partially grown crystal to control the spatial distribution of the impurities in the finished crystal. In operation, the crucible 1, Fig. 1, mounted upon an insulating block 2 contains for example a melt 4 of germanium or selenium with impurities, and is heated by an induction coil 6, the seed crystal 8 being raised from the melt by a cable 10 passing over pulleys 11 to a member 12 slidable in the frame 3 by an electric motor 15. The electric field across the crystal, interface, and melt is provided by a D.C. through a variable resistance 27, a change-over switch 19, an electrode 21 engaging the material 4 at the bottom of the crucible, and a terminal on the crystal holder 9. As the crystal is grown the switch is closed in one direction or the other, and the field intensity may be varied by altering the resistance 27. This variation of field direction and or intensity produces a change in the distribution of each impurity in the growing crystal so that P and N type regions may be produced alternately and the crystal may be grown with any desired specific resistance.
GB11853/55A 1954-04-28 1955-04-25 Method of growing semi-conductors Expired GB779383A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US426270A US2842467A (en) 1954-04-28 1954-04-28 Method of growing semi-conductors

Publications (1)

Publication Number Publication Date
GB779383A true GB779383A (en) 1957-07-17

Family

ID=23690082

Family Applications (1)

Application Number Title Priority Date Filing Date
GB11853/55A Expired GB779383A (en) 1954-04-28 1955-04-25 Method of growing semi-conductors

Country Status (3)

Country Link
US (1) US2842467A (en)
FR (1) FR1130712A (en)
GB (1) GB779383A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082131A (en) * 1959-01-16 1963-03-19 Texas Instruments Inc Versatile transistor structure
DE1278413B (en) * 1959-09-11 1968-09-26 Siemens Ag Process for pulling thin rod-shaped semiconductor crystals from a semiconductor melt

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2961475A (en) * 1957-05-29 1960-11-22 Rca Corp Solid-state charge carrier valve
US2981687A (en) * 1958-04-03 1961-04-25 British Thomson Houston Co Ltd Production of mono-crystal semiconductor bodies
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
US3346344A (en) * 1965-07-12 1967-10-10 Bell Telephone Labor Inc Growth of lithium niobate crystals
FR2358021A1 (en) * 1976-07-09 1978-02-03 Radiotechnique Compelec EPITAXIC DEPOSIT PROCESS OF A SEMICONDUCTOR BY ELECTRIC POLARIZATION OF A LIQUID PHASE
US4186045A (en) * 1976-08-26 1980-01-29 Massachusetts Institute Of Technology Method of epitaxial growth employing electromigration
US4330359A (en) * 1981-02-10 1982-05-18 Lovelace Alan M Administrator Electromigration process for the purification of molten silicon during crystal growth
US4389274A (en) * 1981-03-23 1983-06-21 The United States Of America As Represented By The Secretary Of The Navy Electrochemical deoxygenation for liquid phase epitaxial growth
JPH026383A (en) * 1988-06-24 1990-01-10 Fujitsu Ltd Semiconductor crystal growth equipment
JP3185321B2 (en) * 1991-08-03 2001-07-09 ソニー株式会社 Method for producing KTiOPO4 single crystal
JP3132094B2 (en) * 1991-10-22 2001-02-05 日立金属株式会社 Single crystal manufacturing method and single crystal manufacturing apparatus
JPH0930889A (en) * 1995-07-18 1997-02-04 Komatsu Electron Metals Co Ltd Pull device for semiconductor single crystal
US6632277B2 (en) 1999-07-14 2003-10-14 Seh America, Inc. Optimized silicon wafer gettering for advanced semiconductor devices
US6395085B2 (en) 1999-07-14 2002-05-28 Seh America, Inc. Purity silicon wafer for use in advanced semiconductor devices
US6454852B2 (en) 1999-07-14 2002-09-24 Seh America, Inc. High efficiency silicon wafer optimized for advanced semiconductor devices
US6228165B1 (en) * 1999-07-28 2001-05-08 Seh America, Inc. Method of manufacturing crystal of silicon using an electric potential

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE471046A (en) * 1944-12-14
US2560594A (en) * 1948-09-24 1951-07-17 Bell Telephone Labor Inc Semiconductor translator and method of making it
BE500569A (en) * 1950-01-13
US2651831A (en) * 1950-07-24 1953-09-15 Bell Telephone Labor Inc Semiconductor translating device
US2664486A (en) * 1951-06-15 1953-12-29 Northern Electric Co Thermistor and method of heat-treating it
US2623105A (en) * 1951-09-21 1952-12-23 Bell Telephone Labor Inc Semiconductor translating device having controlled gain
US2711379A (en) * 1952-08-04 1955-06-21 Rothstein Jerome Method of controlling the concentration of impurities in semi-conducting materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082131A (en) * 1959-01-16 1963-03-19 Texas Instruments Inc Versatile transistor structure
DE1278413B (en) * 1959-09-11 1968-09-26 Siemens Ag Process for pulling thin rod-shaped semiconductor crystals from a semiconductor melt

Also Published As

Publication number Publication date
US2842467A (en) 1958-07-08
FR1130712A (en) 1957-02-11

Similar Documents

Publication Publication Date Title
GB779383A (en) Method of growing semi-conductors
US2727840A (en) Methods of producing semiconductive bodies
GB706849A (en) Methods and apparatus for producing germanium crystals
US2730470A (en) Method of making semi-conductor crystals
GB838770A (en) Improvements in method of growing semiconductor crystals
GB767311A (en) Improvements in or relating to semiconductor devices
Putley The hall coefficient, electrical conductivity and magneto-resistance effect of lead sulphide, selenide and telluride
GB931992A (en) Improvements in or relating to methods of manufacturing crystalline semi-conductor material
GB908033A (en) Improvements in semiconductive wafers and methods of making the same
GB871839A (en) Improvements in or relating to processes for the production of semiconductive bodies
GB1183247A (en) Gallium Arsenide
US2999776A (en) Method of producing differentiated doping zones in semiconductor crystals
US2785096A (en) Manufacture of junction-containing silicon crystals
GB752457A (en) Improvements relating to p-n junction semi-conductors
GB1010388A (en) An energy transmitting device
JPS5490086A (en) Method of producing single crystal
GB769426A (en) Improvements relating to the manufacture of crystalline material
RU94039535A (en) Lamellar crystalline material and a method of its preparing
GB809486A (en) Method and apparatus for producing single-crystal semiconductor material
US3031404A (en) Production of uniform high impurity concentration semiconductor material
GB751126A (en) Improvements in or relating to methods of producing semi-conductive monocrystals
SU146049A1 (en) Method for creating electron-hole transitions in dendrites of indium semiconductor antimonide
US2861017A (en) Method of preparing semi-conductor devices
GB1506799A (en) Method for forming a monocrystal from a ferroelectric material
GB1015541A (en) Improvements in or relating to methods of producing a semi-conductor dendrite