GB850595A - Improvements in or relating to methods of producing single crystals - Google Patents
Improvements in or relating to methods of producing single crystalsInfo
- Publication number
- GB850595A GB850595A GB3426/57A GB342657A GB850595A GB 850595 A GB850595 A GB 850595A GB 3426/57 A GB3426/57 A GB 3426/57A GB 342657 A GB342657 A GB 342657A GB 850595 A GB850595 A GB 850595A
- Authority
- GB
- United Kingdom
- Prior art keywords
- single crystals
- grown
- relating
- methods
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
<PICT:0850595/III/1> <PICT:0850595/III/2> Single crystals are grown by placing a body 3 (Fig. 1,) of material in a crucible 1 with a seed crystal 5 in contact with the material 3, melting a zone 4 of the material with a heater 2, moving the heater 2 and, consequently, the molten zone 4 downwardly at a constant speed, and drawing the seed crystal 5 together with the grown single crystal upwardly at a constant speed. Single crystals of material, such as germanium, containing added material such as silicon, are obtained by inserting a rod, tapered to a point at one end of the added material 8 (Fig. 2) in a recess in the body 3 of the material, and growing a single crystal as above. The concentration of the added material in the single crystal thus grown increases from zero along its length and then remains constant.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE850595X | 1956-02-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB850595A true GB850595A (en) | 1960-10-05 |
Family
ID=6778070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3426/57A Expired GB850595A (en) | 1956-02-04 | 1957-01-31 | Improvements in or relating to methods of producing single crystals |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB850595A (en) |
-
1957
- 1957-01-31 GB GB3426/57A patent/GB850595A/en not_active Expired
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