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GB1432985A - Charge-coupled arrangements - Google Patents

Charge-coupled arrangements

Info

Publication number
GB1432985A
GB1432985A GB3305073A GB3305073A GB1432985A GB 1432985 A GB1432985 A GB 1432985A GB 3305073 A GB3305073 A GB 3305073A GB 3305073 A GB3305073 A GB 3305073A GB 1432985 A GB1432985 A GB 1432985A
Authority
GB
United Kingdom
Prior art keywords
charge
electrodes
openings
insulating layer
counter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3305073A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1432985A publication Critical patent/GB1432985A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

1432985 Charge-coupled semi-conductor devices SIEMENS AG 11 July 1973 [16 Aug 1972] 33050/73 Heading H1K Light reaches the semi-conductor body of a radiation-sensitive charge-coupled device through a radiation-transmitting insulating layer and openings 110, 220 in electrodes 10, 20 on the insulating layer. For an N type Si body the insulating layer is made of SiO 2 , the electrodes 10, 20 are made of Al and the openings 110, 220 are slots aligned along the direction of charge transfer of the device, the length of each slot being at most twice the average thickness of the space charge zone in the device. The semiconductor material beneath the openings 110, 220 and the gaps between the electrodes may be counter-doped, e.g. by ion implantation, with acceptor impurities to a sufficient level only partially to compensate the original donar impurities or to an extent sufficient to convert the counter-doped material to p-type conductivity.
GB3305073A 1972-08-16 1973-07-11 Charge-coupled arrangements Expired GB1432985A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2240177A DE2240177A1 (en) 1972-08-16 1972-08-16 CHARGE SHIFTING ARRANGEMENT AS PHOTODETECTOR

Publications (1)

Publication Number Publication Date
GB1432985A true GB1432985A (en) 1976-04-22

Family

ID=5853673

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3305073A Expired GB1432985A (en) 1972-08-16 1973-07-11 Charge-coupled arrangements

Country Status (11)

Country Link
JP (1) JPS4960579A (en)
AT (1) AT336711B (en)
BE (1) BE803591A (en)
CH (1) CH557094A (en)
DE (1) DE2240177A1 (en)
FR (1) FR2196524B1 (en)
GB (1) GB1432985A (en)
IT (1) IT992873B (en)
LU (1) LU68230A1 (en)
NL (1) NL7311203A (en)
SE (1) SE390468B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122284A (en) * 1973-03-22 1974-11-22
JPS5135296A (en) * 1974-09-20 1976-03-25 Nippon Electric Co
JPS57124484A (en) * 1981-01-26 1982-08-03 Oki Electric Ind Co Ltd Optical reading sensor

Also Published As

Publication number Publication date
CH557094A (en) 1974-12-13
DE2240177A1 (en) 1974-02-21
BE803591A (en) 1974-02-14
JPS4960579A (en) 1974-06-12
NL7311203A (en) 1974-02-19
AT336711B (en) 1977-05-25
SE390468B (en) 1976-12-20
ATA639573A (en) 1976-09-15
FR2196524A1 (en) 1974-03-15
FR2196524B1 (en) 1977-02-25
IT992873B (en) 1975-09-30
LU68230A1 (en) 1974-02-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee