JPS5732673A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5732673A JPS5732673A JP10868880A JP10868880A JPS5732673A JP S5732673 A JPS5732673 A JP S5732673A JP 10868880 A JP10868880 A JP 10868880A JP 10868880 A JP10868880 A JP 10868880A JP S5732673 A JPS5732673 A JP S5732673A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxidized film
- film
- electrically insulating
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Abstract
PURPOSE:To obtain an MIS transistor having less short channel effect and high performance by converting the depletion layer generating region of a semiconductor substrate directly under a gate oxidized film into an electrically insulating layer, thereby suppressing the extension of a drain side depletion layer. CONSTITUTION:Drain and source layers 2 and 3 of reversely conductive impurity conductive layer to the conductive type of a silicon substrate are formed in a silicon substrate 1, the intermediate part between the source layer 3 and the drain layer 2 of the oxidized film on the surface of the silicon substrate is partly removed, a gate oxidized film 4 is formed in the intermediate part, and the remaining thick oxidized film is retained on the other part as a field oxidized film 5. To form an electrically insulating layer 10 directly under the film 4, an element forming electrically insulating compound by reacting with the silicon is introduced by an ion implantation method through the film 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10868880A JPS5732673A (en) | 1980-08-06 | 1980-08-06 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10868880A JPS5732673A (en) | 1980-08-06 | 1980-08-06 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5732673A true JPS5732673A (en) | 1982-02-22 |
Family
ID=14491126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10868880A Pending JPS5732673A (en) | 1980-08-06 | 1980-08-06 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732673A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2791181A1 (en) * | 1999-03-19 | 2000-09-22 | France Telecom | NOVEL METAL GRID TRANSISTOR AND UNDERGROUND CHANNEL, COUNTER-DOPING, AND MANUFACTURING METHOD |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52144979A (en) * | 1976-05-28 | 1977-12-02 | Hitachi Ltd | Transistor |
| JPS538077A (en) * | 1976-07-09 | 1978-01-25 | Matsushita Electric Ind Co Ltd | Field effect transistor and its production |
| JPS5492075A (en) * | 1977-12-28 | 1979-07-20 | Seiko Epson Corp | Semiconductor device |
| JPS55148464A (en) * | 1979-05-08 | 1980-11-19 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Mos semiconductor device and its manufacture |
-
1980
- 1980-08-06 JP JP10868880A patent/JPS5732673A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52144979A (en) * | 1976-05-28 | 1977-12-02 | Hitachi Ltd | Transistor |
| JPS538077A (en) * | 1976-07-09 | 1978-01-25 | Matsushita Electric Ind Co Ltd | Field effect transistor and its production |
| JPS5492075A (en) * | 1977-12-28 | 1979-07-20 | Seiko Epson Corp | Semiconductor device |
| JPS55148464A (en) * | 1979-05-08 | 1980-11-19 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Mos semiconductor device and its manufacture |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2791181A1 (en) * | 1999-03-19 | 2000-09-22 | France Telecom | NOVEL METAL GRID TRANSISTOR AND UNDERGROUND CHANNEL, COUNTER-DOPING, AND MANUFACTURING METHOD |
| WO2000057482A1 (en) * | 1999-03-19 | 2000-09-28 | France Telecom | Novel transistor with metal gate and buried counter-doped channel and method for making same |
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