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FR2646018B1 - Puce semiconductrice munie d'un dissipateur de chaleur et son procede de fabrication - Google Patents

Puce semiconductrice munie d'un dissipateur de chaleur et son procede de fabrication

Info

Publication number
FR2646018B1
FR2646018B1 FR9004371A FR9004371A FR2646018B1 FR 2646018 B1 FR2646018 B1 FR 2646018B1 FR 9004371 A FR9004371 A FR 9004371A FR 9004371 A FR9004371 A FR 9004371A FR 2646018 B1 FR2646018 B1 FR 2646018B1
Authority
FR
France
Prior art keywords
semiconductor chip
substrate
manufacturing process
heat dissipator
chip equipped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9004371A
Other languages
English (en)
Other versions
FR2646018A1 (fr
Inventor
Kobiki Michihiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2646018A1 publication Critical patent/FR2646018A1/fr
Application granted granted Critical
Publication of FR2646018B1 publication Critical patent/FR2646018B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Abstract

L'invention concerne un dispositif semiconducteur produit par la production d'éléments fonctionnels sur la surface d'un substrat de plaquette semiconductrice 8, la production d'une électrode radiante 4 et d'une couche radiante isolante 12 successivement sur la surface arrière du substrat 8, et la subdivision du substrat en plusieurs puces semiconductrices 50, caractérisé en ce que la puce semiconductrice 50 qui comprend la couche radiante dure 12 présente une dimension en configuration externe supérieure à celle de son substrat.
FR9004371A 1989-04-12 1990-04-05 Puce semiconductrice munie d'un dissipateur de chaleur et son procede de fabrication Expired - Fee Related FR2646018B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1093578A JPH02271558A (ja) 1989-04-12 1989-04-12 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
FR2646018A1 FR2646018A1 (fr) 1990-10-19
FR2646018B1 true FR2646018B1 (fr) 1998-01-02

Family

ID=14086153

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9004371A Expired - Fee Related FR2646018B1 (fr) 1989-04-12 1990-04-05 Puce semiconductrice munie d'un dissipateur de chaleur et son procede de fabrication

Country Status (4)

Country Link
US (1) US5138439A (fr)
JP (1) JPH02271558A (fr)
DE (1) DE4010370C2 (fr)
FR (1) FR2646018B1 (fr)

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JP2665062B2 (ja) * 1991-02-12 1997-10-22 三菱電機株式会社 半導体装置の製造方法
JPH06209058A (ja) * 1993-01-12 1994-07-26 Mitsubishi Electric Corp 半導体装置及びその製造方法，並びにその実装方法
JPH06268112A (ja) * 1993-03-10 1994-09-22 Mitsubishi Electric Corp 半導体装置、及びその製造方法
JP2625368B2 (ja) * 1993-12-16 1997-07-02 日本電気株式会社 半導体基板
US6331731B1 (en) 1995-12-07 2001-12-18 International Business Machines Corporation Column for module component
KR19980067735A (ko) * 1997-02-11 1998-10-15 문정환 반도체 패키지의 제조방법
DE19749987B4 (de) * 1997-07-11 2008-09-25 Curamik Electronics Gmbh Gehäuse für Halbleiterbauelemente, insbesondere für Leistungshalbleiterbauelemente
DE19729677B4 (de) * 1997-07-11 2006-05-18 Curamik Electronics Gmbh Gehäuse für Halbleiterbauelemente, insbesondere für Leistungshalbleiterbauelemente
JP3497722B2 (ja) * 1998-02-27 2004-02-16 富士通株式会社 半導体装置及びその製造方法及びその搬送トレイ
US6355505B1 (en) * 1998-04-08 2002-03-12 Fuji Photo Film Co., Ltd. Heat sink and method of manufacturing heat sink
JP2000077576A (ja) * 1998-09-02 2000-03-14 Texas Instr Japan Ltd 半導体装置及びその製造方法
DE19906209C2 (de) * 1999-02-15 2003-03-20 Possehl Electronic Gmbh Verfahren zum Heraustrennen einzelner Schaltkreis-Einheiten aus einem Panel
SE516139C2 (sv) 1999-03-17 2001-11-26 Ericsson Telefon Ab L M Förfarande och anordning för att förbättra termiska och elektriska egenskaper hos komponenter förbunda med ett substrat monterat på en bärare
DE10015962C2 (de) * 2000-03-30 2002-04-04 Infineon Technologies Ag Hochtemperaturfeste Lotverbindung für Halbleiterbauelement
EP1162661B1 (fr) * 2000-06-06 2006-09-27 STMicroelectronics S.r.l. Dispositif semiconducteur contenant un dissipateur de chaleur
DE10244791B4 (de) * 2002-09-26 2009-03-26 Robert Bosch Gmbh Vorrichtung zur Kühlung von elektronischen Bauelementen
DE10340681B4 (de) * 2003-09-04 2006-09-28 M.Pore Gmbh Verfahren zur Herstellung einer stoffschlüssigen, wärmeleitenden Verbindung zwischen einer offenporigen Schaumstruktur und einem nichtporösen Grundkörper für Wärmeübertrager, insbesonderer Kühlkörper
DE102004012818B3 (de) * 2004-03-16 2005-10-27 Infineon Technologies Ag Verfahren zum Herstellen eines Leistungshalbleiterbauelements
DE102005061263B4 (de) 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben
US20070262441A1 (en) * 2006-05-09 2007-11-15 Chi-Ming Chen Heat sink structure for embedded chips and method for fabricating the same
FR2921201B1 (fr) * 2007-09-19 2009-12-18 Commissariat Energie Atomique Procede de collage de puces sur un substrat de contrainte et procede de mise sous contrainte d'un circuit de lecture semi-conducteur
DE102012213273B4 (de) * 2012-07-27 2021-08-05 Hydac Technology Gmbh Energiespeichervorrichtung
JP2019149472A (ja) * 2018-02-27 2019-09-05 株式会社東芝 半導体装置及びダイシング方法
US20230373018A1 (en) * 2022-05-23 2023-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Dual blade configuration for wafer edge trimming process

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US3846824A (en) * 1973-06-13 1974-11-05 Gen Electric Improved thermally conductive and electrically insulative mounting systems for heat sinks
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US4403241A (en) * 1980-08-22 1983-09-06 Bell Telephone Laboratories, Incorporated Method for etching III-V semiconductors and devices made by this method
DE3115017A1 (de) * 1981-04-14 1982-11-04 Blaupunkt-Werke Gmbh, 3200 Hildesheim Elektronisches bauelement
JPS5835956A (ja) * 1981-08-28 1983-03-02 Hitachi Ltd 混成集積回路装置
JPS5848926A (ja) * 1981-09-18 1983-03-23 Hitachi Ltd 絶縁型半導体装置
JPS58125854A (ja) * 1982-01-22 1983-07-27 Hitachi Ltd 半導体装置
FR2525815B1 (fr) * 1982-04-27 1985-08-30 Inf Milit Spatiale Aeronaut Substrat composite a haute conduction thermique et application aux boitiers de dispositifs semi-conducteurs
JPS59124750A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 半導体装置
JPS59224149A (ja) * 1983-06-03 1984-12-17 Sony Corp 発熱電子素子の取付構造
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JPH063832B2 (ja) * 1985-10-04 1994-01-12 株式会社日立製作所 半導体装置
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JPS63186454A (ja) * 1987-01-28 1988-08-02 Mitsubishi Electric Corp 半導体装置用放熱板装置
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JPS63296361A (ja) * 1987-05-28 1988-12-02 Hitachi Cable Ltd 半導体装置
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JPH01316959A (ja) * 1988-06-17 1989-12-21 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
US5138439A (en) 1992-08-11
DE4010370A1 (de) 1990-10-18
DE4010370C2 (de) 1995-05-11
JPH02271558A (ja) 1990-11-06
FR2646018A1 (fr) 1990-10-19

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Legal Events

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ST Notification of lapse

Effective date: 20051230