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JPS6489355A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6489355A
JPS6489355A JP24718487A JP24718487A JPS6489355A JP S6489355 A JPS6489355 A JP S6489355A JP 24718487 A JP24718487 A JP 24718487A JP 24718487 A JP24718487 A JP 24718487A JP S6489355 A JPS6489355 A JP S6489355A
Authority
JP
Japan
Prior art keywords
substrate
cracking
insulator
metal layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24718487A
Other languages
Japanese (ja)
Inventor
Yoshihiro Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24718487A priority Critical patent/JPS6489355A/en
Publication of JPS6489355A publication Critical patent/JPS6489355A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To improve thermal characteristic and to prevent a semiconductor device from cracking by isolating heat generating sections of adjacent semiconductor elements, and forming a metal layer on a substrate. CONSTITUTION:After an emitter 2, a base 3 and a collector 4 are formed on a substrate 6, an insulating tape 5 is adhered on a semiconductor element 1. Then, the substrate 6 is reduced in thickness by chemical and mechanical treatment method from the side of the substrate 6. Then, the heat generating section 7 of the element 1 is isolated from that of its adjacent element 1. Thereafter, an insulator 8 is buried in a recess generated in the isolating step, thereby flattening the surface of the substrate. Subsequently, after a metal layer 9 is formed on the whole substrate, the tape 5 is separated, and the insulator 8 is then removed. Thus, the thermal balance with heat dissipation is improved, thereby improving thermal characteristic. Even if the size of a semiconductor element is increased, it can prevent the element from cracking.
JP24718487A 1987-09-29 1987-09-29 Manufacture of semiconductor device Pending JPS6489355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24718487A JPS6489355A (en) 1987-09-29 1987-09-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24718487A JPS6489355A (en) 1987-09-29 1987-09-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6489355A true JPS6489355A (en) 1989-04-03

Family

ID=17159689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24718487A Pending JPS6489355A (en) 1987-09-29 1987-09-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6489355A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05234972A (en) * 1992-02-24 1993-09-10 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05234972A (en) * 1992-02-24 1993-09-10 Nec Corp Manufacture of semiconductor device

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