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FR2637743B1 - Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser - Google Patents

Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser

Info

Publication number
FR2637743B1
FR2637743B1 FR8813106A FR8813106A FR2637743B1 FR 2637743 B1 FR2637743 B1 FR 2637743B1 FR 8813106 A FR8813106 A FR 8813106A FR 8813106 A FR8813106 A FR 8813106A FR 2637743 B1 FR2637743 B1 FR 2637743B1
Authority
FR
France
Prior art keywords
production
semiconductor laser
locking layer
buried tape
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8813106A
Other languages
English (en)
Other versions
FR2637743A1 (fr
Inventor
Jean-Claude Bouley
Christophe Kazmierski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Etat Francais
Original Assignee
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etat Francais filed Critical Etat Francais
Priority to FR8813106A priority Critical patent/FR2637743B1/fr
Publication of FR2637743A1 publication Critical patent/FR2637743A1/fr
Application granted granted Critical
Publication of FR2637743B1 publication Critical patent/FR2637743B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR8813106A 1988-10-06 1988-10-06 Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser Expired - Fee Related FR2637743B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8813106A FR2637743B1 (fr) 1988-10-06 1988-10-06 Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8813106A FR2637743B1 (fr) 1988-10-06 1988-10-06 Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser

Publications (2)

Publication Number Publication Date
FR2637743A1 FR2637743A1 (fr) 1990-04-13
FR2637743B1 true FR2637743B1 (fr) 1994-07-29

Family

ID=9370744

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8813106A Expired - Fee Related FR2637743B1 (fr) 1988-10-06 1988-10-06 Laser a semiconducteur a ruban enterre et a couche bloquante et procede de fabrication de ce laser

Country Status (1)

Country Link
FR (1) FR2637743B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2673330B1 (fr) * 1991-02-26 1997-06-20 France Telecom Procede de realisation d'un laser a semiconducteur a ruban enterre, utilisant une gravure seche pour former ce ruban, et laser obtenu par ce procede.
US6891665B2 (en) * 2001-11-02 2005-05-10 T-Networks, Inc. Semiconductor optical amplifier with reduced effects of gain saturation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052577B2 (ja) * 1979-03-26 1985-11-20 富士通株式会社 光半導体装置
JPS5712588A (en) * 1980-06-26 1982-01-22 Nec Corp Manufacture of buried type heterojunction laser element
FR2587852B1 (fr) * 1985-09-24 1989-04-07 Chaminant Guy Procede de realisation d'un laser a semiconducteur a ruban enterre avec ou sans reseau de diffraction et laser obtenu par ce procede
EP0273730B1 (fr) * 1986-12-26 1992-12-23 Matsushita Electric Industrial Co., Ltd. Méthode de fabrication d'un dispositif à semi-conducteur

Also Published As

Publication number Publication date
FR2637743A1 (fr) 1990-04-13

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse