KR890015347A - 변형 초격자 구조층을 포함하는 반도체 기판 - Google Patents

변형 초격자 구조층을 포함하는 반도체 기판

Info

Publication number: KR890015347A
Authority: KR; South Korea
Prior art keywords: semiconductor substrate; substrate including; structure layer; superlattice structure; strained superlattice
Prior art date: 1988-03-01

Application number

KR1019890002570A

Other languages

English (en)

Other versions

KR930004240B1 (ko

Inventor

히로시 오꾸다

미쯔루 스가와라

Original Assignee

후지쓰 가부시끼가이샤

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-03-01

Filing date

1989-03-02

Publication date

1989-10-30

1989-03-02 Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤

1989-10-30 Publication of KR890015347A publication Critical patent/KR890015347A/ko

1993-05-22 Application granted granted Critical

1993-05-22 Publication of KR930004240B1 publication Critical patent/KR930004240B1/ko

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02549—Antimonides
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
- H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
- H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
- H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Nanotechnology (AREA)
Life Sciences & Earth Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Optics & Photonics (AREA)
Biophysics (AREA)
Recrystallisation Techniques (AREA)

KR1019890002570A 1988-03-01 1989-03-02 변형 초격자 구조층을 포함하는 반도체 기판 KR930004240B1 (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP88-045819		1988-03-01
JP63045819A JPH01222430A (ja)	1988-03-01	1988-03-01	歪超格子バッファ

Publications (2)

Publication Number	Publication Date
KR890015347A true KR890015347A (ko)	1989-10-30
KR930004240B1 KR930004240B1 (ko)	1993-05-22

Family

ID=12729857

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019890002570A KR930004240B1 (ko)	1988-03-01	1989-03-02	변형 초격자 구조층을 포함하는 반도체 기판

Country Status (5)

Country	Link
US (1)	US5001521A (ko)
EP (1)	EP0332329B1 (ko)
JP (1)	JPH01222430A (ko)
KR (1)	KR930004240B1 (ko)
DE (1)	DE68906433T2 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5021360A (en) *	1989-09-25	1991-06-04	Gte Laboratories Incorporated	Method of farbicating highly lattice mismatched quantum well structures
US5396082A (en) *	1991-04-15	1995-03-07	Nippon Telegraph & Telephone Corporation	Semiconductor substrate and device with a surface layer structure
US5208182A (en) *	1991-11-12	1993-05-04	Kopin Corporation	Dislocation density reduction in gallium arsenide on silicon heterostructures
US5313073A (en) *	1992-08-06	1994-05-17	University Of Southern California	Light detector using intersub-valence band transitions with strained barriers
US5585957A (en) *	1993-03-25	1996-12-17	Nippon Telegraph And Telephone Corporation	Method for producing various semiconductor optical devices of differing optical characteristics
DE19604348C2 (de)	1996-02-07	2003-10-23	Deutsche Telekom Ag	Verfahren zur Herstellung einer kalibrierten Längenskala im Nanometerbereich für technische Geräte, die der hochauflösenden bis ultrahochauflösenden Abbildung von Strukturen dienen
US6069394A (en) *	1997-04-09	2000-05-30	Matsushita Electronics Corporation	Semiconductor substrate, semiconductor device and method of manufacturing the same
EP1053574A4 (en) *	1997-12-29	2002-11-06	Coretek Inc	FABRY-PEROT FILTER AND LASER WITH SURFACE EMISSION AND VERTICAL, CONFOCAL CAVITY, TUNABLE BY MICROELECTROMECHANICS
FR3028670B1 (fr)	2014-11-18	2017-12-22	Commissariat Energie Atomique	Structure semi-conductrice a couche de semi-conducteur du groupe iii-v ou ii-vi comprenant une structure cristalline a mailles cubiques ou hexagonales
WO2017037610A1 (en)	2015-09-04	2017-03-09	Novartis Ag	Method for producing contact lenses with durable lubricious coatings thereon
JP2017112198A (ja) *	2015-12-16	2017-06-22	日本電信電話株式会社	半導体積層構造

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2225207B1 (ko) *	1973-04-16	1978-04-21	Ibm
US4053920A (en) *	1975-11-10	1977-10-11	The United States Of America As Represented By The Secretary Of The Army	Step graded photocathode
US4195305A (en) *	1978-09-25	1980-03-25	Varian Associates, Inc.	Lattice constant grading in the Aly Ga1-y As1-x Sbx alloy system
US4607272A (en) *	1983-10-06	1986-08-19	The United States Of America As Represented By The United States Department Of Energy	Electro-optical SLS devices for operating at new wavelength ranges
US4558336A (en) *	1984-03-02	1985-12-10	The United States Of America As Represented By The Secretary Of The Army	MBE Growth technique for matching superlattices grown on GaAs substrates
JPS6110293A (ja) *	1984-06-25	1986-01-17	Sharp Corp	光半導体装置
JPH0632339B2 (ja) *	1984-12-18	1994-04-27	キヤノン株式会社	半導体レ−ザ
US4788579A (en) *	1985-09-30	1988-11-29	The General Electric Company	Semiconductor superlattice
JPS62291018A (ja) *	1986-06-11	1987-12-17	Hitachi Ltd	Ｍｂｅ法による傾斜組成化合物半導体の作成法
WO1988001792A1 (en) *	1986-09-04	1988-03-10	Varian Associates, Inc.	Superlattice for a semiconductor device

1988
- 1988-03-01 JP JP63045819A patent/JPH01222430A/ja active Pending
1989
- 1989-02-28 US US07/316,735 patent/US5001521A/en not_active Expired - Fee Related
- 1989-02-28 DE DE8989301982T patent/DE68906433T2/de not_active Expired - Fee Related
- 1989-02-28 EP EP89301982A patent/EP0332329B1/en not_active Expired - Lifetime
- 1989-03-02 KR KR1019890002570A patent/KR930004240B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE68906433D1 (de)	1993-06-17
KR930004240B1 (ko)	1993-05-22
US5001521A (en)	1991-03-19
JPH01222430A (ja)	1989-09-05
EP0332329B1 (en)	1993-05-12
DE68906433T2 (de)	1993-09-23
EP0332329A3 (en)	1990-06-13
EP0332329A2 (en)	1989-09-13

Publication	Publication Date	Title
DE68925374D1 (de)	1996-02-22	Halbleiterherstellungsvorrichtung
KR900017166A (ko)	1990-11-15	액티브매트릭스기판의 제조방법
KR900008644A (ko)	1990-06-03	반도체 장치 제조 방법
EP0217288A3 (en)	1988-05-18	Substrate structure for a composite semiconductor device
KR890015366A (ko)	1989-10-30	반도체 박막형성법
DE69210942D1 (de)	1996-06-27	Halbleiterherstellung
DE69322180D1 (de)	1999-01-07	Halbleiteranordnung mit einer Leiterschicht
DE68928087D1 (de)	1997-07-10	Substratsstruktur für zusammengesetztes Halbleiterbauelement
EP0335383A3 (en)	1990-05-30	Semiconductor device having a metallization film layer semiconductor device having a metallization film layer
GB8518442D0 (en)	1985-08-29	Semiconductor layer structures
KR860006132A (ko)	1986-08-18	반도체 장치용 기판 구조체
KR890015368A (ko)	1989-10-30	반도체장치 제조방법
DE3479943D1 (de)	1989-11-02	A masterslice semiconductor device
KR910003762A (ko)	1991-02-28	게터링 시이트를 가진 절연체위에 반도체를 구비한 구조의 기판과 그 제조방법
KR900008628A (ko)	1990-06-03	반도체 제조장치
DE68919485D1 (de)	1995-01-12	Halbleitersubstrat mit Substratscheibe und Verbindungshalbleiterschicht.
KR890015347A (ko)	1989-10-30	변형 초격자 구조층을 포함하는 반도체 기판
KR900008697A (ko)	1990-06-03	반도체 웨이퍼 제조방법
KR910001871A (ko)	1991-01-31	반도체 소자 제조방법
KR900008664A (ko)	1990-06-03	캐리어기판 및 그 제조방법
DE68918799D1 (de)	1994-11-17	Verbindungshalbleitersubstrat.
KR900010934A (ko)	1990-07-11	세미콘덕터-온-인슐레이터(semiconductor-on-insulator)구조와 세미콘덕터-온-인슐레이터 구조를 가지는 반도체장치의 제조방법
BR8903430A (pt)	1990-03-06	Estrutura de multiplas camadas
DE68905321D1 (de)	1993-04-15	Cer-oxyfluorid-antireflexschicht fuer photodetektoren aus ii-vi-elementen und herstellungsverfahren.
DE69429701D1 (de)	2002-03-14	Halbleiterschichtstruktur mit verteilter Verspannung

Legal Events

Date	Code	Title	Description
1989-03-02	A201	Request for examination
1989-03-02	PA0109	Patent application	Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19890302
1989-03-02	PA0201	Request for examination	Patent event code: PA02012R01D Patent event date: 19890302 Comment text: Request for Examination of Application
1989-10-30	PG1501	Laying open of application
1992-06-30	E902	Notification of reason for refusal
1992-06-30	PE0902	Notice of grounds for rejection	Comment text: Notification of reason for refusal Patent event date: 19920630 Patent event code: PE09021S01D
1993-04-28	G160	Decision to publish patent application
1993-05-22	PG1605	Publication of application before grant of patent	Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19930428
1993-07-31	E701	Decision to grant or registration of patent right
1993-07-31	PE0701	Decision of registration	Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19930731
1993-10-26	GRNT	Written decision to grant
1993-10-26	PR0701	Registration of establishment	Comment text: Registration of Establishment Patent event date: 19931026 Patent event code: PR07011E01D
1993-10-26	PR1002	Payment of registration fee	Payment date: 19931026 End annual number: 3 Start annual number: 1
1996-05-23	LAPS	Lapse due to unpaid annual fee
1996-05-23	PC1903	Unpaid annual fee