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EP1336197A1 - Procede de protection de composants electroniques ou micromecaniques - Google Patents

Procede de protection de composants electroniques ou micromecaniques

Info

Publication number
EP1336197A1
EP1336197A1 EP01982175A EP01982175A EP1336197A1 EP 1336197 A1 EP1336197 A1 EP 1336197A1 EP 01982175 A EP01982175 A EP 01982175A EP 01982175 A EP01982175 A EP 01982175A EP 1336197 A1 EP1336197 A1 EP 1336197A1
Authority
EP
European Patent Office
Prior art keywords
protective layer
component
components
protective
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP01982175A
Other languages
German (de)
English (en)
Inventor
Hans Hecht
Lutz Mueller
Andreas Stark
Werner Steiner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of EP1336197A1 publication Critical patent/EP1336197A1/fr
Ceased legal-status Critical Current

Links

Classifications

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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48764—Palladium (Pd) as principal constituent
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8536—Bonding interfaces of the semiconductor or solid state body
    • H01L2224/85375—Bonding interfaces of the semiconductor or solid state body having an external coating, e.g. protective bond-through coating
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01028—Nickel [Ni]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
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    • H01L2924/01052—Tellurium [Te]
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    • H01L2924/01058—Cerium [Ce]
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    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns

Definitions

  • the invention relates to a method for protecting electronic or micromechanical components from contamination and / or corrosion according to the preamble of claim 1 and to a component provided with a protective layer and its use.
  • microchips are produced in a composite and then have to be separated by a mechanical process, in the simplest case by sawing.
  • the resulting dusts and sludges for example, contaminate the contact surfaces of the microchips and must be removed.
  • this can be done by high-pressure cleaning; in the case of sensitive electronic or micromechanical components, this is not possible because of possible damage.
  • the object of the present invention is to provide a method which ensures the protection, in particular of contact surfaces of electronic or micromechanical components, from contamination and / or corrosion.
  • the method according to the invention with the characterizing features of claim 1 has the advantage that it effectively protects the protection of electronic or micromechanical components from dirt and / or corrosion. This is brought about by the application of an organic protective layer at least on the contact surfaces of the component L5.
  • the components are contacted in such a way that there is no need to remove the protective layer beforehand and the component is protected against corrosion during and after manufacture.
  • the protective layer is pierced during contacting.
  • a component for producing the protective layer is added to the cooling water used during the sawing process, so that the application of the protective layer can be integrated into the separation process of the components.
  • Figure 1 is an electronic or micromechanical
  • Component shown schematically which has a contact surface 12 on a substrate 10 made of silicon, for example, which serves for the electrical contacting of the component.
  • a contact area is also referred to as a bond pad. It can include aluminum, an aluminum / copper alloy, nickel, silver, a silver / palladium alloy, copper or gold.
  • Electronic or micromechanical components are usually manufactured as a composite and separated mechanically at the end of the manufacturing process, usually by sawing.
  • Sawing sludge is deposited on the components, which adhere very firmly and prevent subsequent reliable contacting of the components.
  • the sawing sludge can be removed using high-pressure cleaning after separation, but this is not possible for sensitive components.
  • the contact surfaces 12 of the component are provided with an organic protective layer 14 before the separation, depending on the application, the remaining surface of the component can also be completely or partially covered with the protective layer 14.
  • the protective layer 14 also avoids corrosion of the component.
  • the contact surface 12 of the component is provided with an electrical conductor 16, the electrical conductor 16 being applied to the surface of the contact surface 12 5 such that it penetrates the protective layer 14.
  • all conventional welding and soldering methods are suitable, but friction welding under the influence of ultrasound has proven to be particularly favorable with regard to the least possible damage to the protective layer 14.
  • the organic protective layer 14 Before the organic protective layer 14 is applied to the contact surface or the surface of the component, for example a surface treatment of the component is carried out.
  • the component is degreased and, if necessary, by means of an aqueous solution, the hydrogen peroxide
  • Suitable as protective layer 14 are well-adhering, thin layers or varnishes which contain, for example, polysilanes, polysiloxanes, polyglycols or polyether glycols.
  • the application of waxes or oils is also conceivable.
  • the use of fluorine-substituted compounds is particularly advantageous. These form a hydrophobic surface and facilitate the contacting of the component.
  • an aluminum wire is used as the electrical conductor 16
  • aluminum fluoride forms during contacting, which acts as a flux and significantly increases the strength of the contact point.
  • Methods such as spin coating, spraying, dipping, painting, drizzling and screen printing are suitable for applying the protective layer 14.
  • Methods such as CVD, in which the compounds are evaporated under reduced pressure, are also suitable. This also applies to plasma-assisted depositions, sputtering and PVD.
  • Organotriacalkoxysilanes or organotrichlorosilanes which react well with both silicon and aluminum surfaces are particularly suitable as starting compounds. Two embodiments are described below.
  • the surface of a silicon wafer 10 with at least one contact point 12 made of aluminum is exposed in a vacuum oven at approximately 150 ° C. and approximately 10 mbar for 5 minutes to gaseous hexamethyldisilazane. The surface then behaves hydrophobically.
  • a 0.5 percent solution of 1,1,2,2 tetrahydroperfluorocytyltriethoxysilane in 2-propanol is placed on the surface of a silicon wafer 10 with at least one contact point 12 made of aluminum and after a waiting time of 10 minutes by means of a spin coater at about 4000 revolutions per minute 30 seconds long hurled.
  • the wafer is heated to approximately 120 ° C for 10 minutes.
  • the protective layer 14 produced in this way enables the component to be contacted, for example, with a 50 ⁇ m thick aluminum wire, the contacting being selected due to the formation of aluminum fluoride. rend the contacting process has a higher stability than for components without a protective layer.
  • the connections to form the protective layer are added to the rinsing and cooling water of the wafer saw, for example.
  • the water-soluble compounds immediately form a protective layer 14 on the wetted surface of the component, which protects the component from adhesive sludges.
  • the protective layer can also be applied using an aqueous immersion bath.
  • Suitable compounds for this purpose are mono- and diesters of a phosphoric or phosphonic acid, their partially fluorinated derivatives being particularly suitable.
  • a third exemplary embodiment is described below.
  • a silicon wafer with contact points 12 made of aluminum 15 is in a 0.1 percent aqueous solution of 1,1,2,2
  • the invention is not limited to the exemplary embodiments described, but in addition to the combination of several 15 of the methods described for applying the organic ones - 1 -
  • Protective layer 14 further application fields are conceivable, which require effective protection against contamination or corrosion. So even robust metal objects can be provided with such a protective layer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne un procédé de protection de composants électroniques ou micromécaniques qui présentent au moins une surface de contact (12) destinée au contact électrique. Selon l'invention, des composants sensibles tels que des micropuces électroniques, pourvus de plages de connexion doivent être protégés contre l'encrassement et la corrosion. Ce procédé comporte l'application d'une couche de protection organique (14) au moins sur les surfaces de contact (12) des composants.
EP01982175A 2000-10-14 2001-10-02 Procede de protection de composants electroniques ou micromecaniques Ceased EP1336197A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10051053 2000-10-14
DE10051053A DE10051053A1 (de) 2000-10-14 2000-10-14 Verfahren zum Schutz elektronischer oder mikromechanischer Bauteile
PCT/DE2001/003785 WO2002033749A1 (fr) 2000-10-14 2001-10-02 Procede de protection de composants electroniques ou micromecaniques

Publications (1)

Publication Number Publication Date
EP1336197A1 true EP1336197A1 (fr) 2003-08-20

Family

ID=7659846

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01982175A Ceased EP1336197A1 (fr) 2000-10-14 2001-10-02 Procede de protection de composants electroniques ou micromecaniques

Country Status (4)

Country Link
US (1) US20040026775A1 (fr)
EP (1) EP1336197A1 (fr)
DE (1) DE10051053A1 (fr)
WO (1) WO2002033749A1 (fr)

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US7256467B2 (en) * 2002-06-04 2007-08-14 Silecs Oy Materials and methods for forming hybrid organic-inorganic anti-stiction materials for micro-electromechanical systems
DE10243513A1 (de) * 2002-09-19 2004-04-01 Robert Bosch Gmbh Elektrisches und/oder mikromechanisches Bauelement und Verfahren
GB0703172D0 (en) 2007-02-19 2007-03-28 Pa Knowledge Ltd Printed circuit boards
US8618420B2 (en) * 2008-08-18 2013-12-31 Semblant Global Limited Apparatus with a wire bond and method of forming the same
SG10201701218UA (en) * 2008-08-18 2017-03-30 Semblant Ltd Halo-hydrocarbon polymer coating
US8995146B2 (en) 2010-02-23 2015-03-31 Semblant Limited Electrical assembly and method
CN106992195B (zh) * 2016-01-18 2021-10-15 晶元光电股份有限公司 发光二极管装置及其制造方法
GB201621177D0 (en) 2016-12-13 2017-01-25 Semblant Ltd Protective coating

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EP0054426A2 (fr) * 1980-12-15 1982-06-23 M & T Chemicals, Inc. Siloxanes
EP0120981A1 (fr) * 1982-03-29 1984-10-10 Kabushiki Kaisha Toshiba Dispositif semi-conducteur du type enrobé dans une résine
EP0540032B1 (fr) * 1991-11-01 1996-03-06 Fuji Photo Film Co., Ltd. Photorésiste et procédé de gravure

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US3630790A (en) * 1969-05-13 1971-12-28 Dow Chemical Co Method of protection of metal surfaces from corrosion
US4544446A (en) * 1984-07-24 1985-10-01 J. T. Baker Chemical Co. VLSI chemical reactor
JPS61114541A (ja) * 1984-11-09 1986-06-02 Toshiba Corp ワイヤボンデイング方法
US5144407A (en) * 1989-07-03 1992-09-01 General Electric Company Semiconductor chip protection layer and protected chip
JP2844868B2 (ja) * 1989-07-20 1999-01-13 ロンザ リミテッド テトロン酸アルキルエステルの製造方法
JPH03116941A (ja) * 1989-09-29 1991-05-17 Fujitsu Ltd 半導体装置の製造方法
US5277788A (en) * 1990-10-01 1994-01-11 Aluminum Company Of America Twice-anodized aluminum article having an organo-phosphorus monolayer and process for making the article
US5646439A (en) * 1992-05-13 1997-07-08 Matsushita Electric Industrial Co., Ltd. Electronic chip component with passivation film and organic protective film
US5668212A (en) * 1992-10-06 1997-09-16 Shizu Naito Aqueous organosiloxane liquid composition and its use
JPH0794639A (ja) * 1993-06-14 1995-04-07 Toshiba Corp 半導体装置及び製造方法
US6076256A (en) * 1997-04-18 2000-06-20 Seagate Technology, Inc. Method for manufacturing magneto-optical data storage system

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Publication number Priority date Publication date Assignee Title
EP0054426A2 (fr) * 1980-12-15 1982-06-23 M & T Chemicals, Inc. Siloxanes
EP0120981A1 (fr) * 1982-03-29 1984-10-10 Kabushiki Kaisha Toshiba Dispositif semi-conducteur du type enrobé dans une résine
EP0540032B1 (fr) * 1991-11-01 1996-03-06 Fuji Photo Film Co., Ltd. Photorésiste et procédé de gravure

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See also references of WO0233749A1 *

Also Published As

Publication number Publication date
DE10051053A1 (de) 2002-05-02
WO2002033749A1 (fr) 2002-04-25
US20040026775A1 (en) 2004-02-12

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