Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
  • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
  • B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
  • B26D3/28—Splitting layers from work; Mutually separating layers by cutting
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
  • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
  • B26F3/00—Severing by means other than cutting; Apparatus therefor
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
  • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
  • B26F3/00—Severing by means other than cutting; Apparatus therefor
  • B26F3/002—Precutting and tensioning or breaking
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
  • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
  • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
  • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
  • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Life Sciences & Earth Sciences (AREA)
• Forests & Forestry (AREA)
• Mechanical Engineering (AREA)
• Computer Hardware Design (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• High Energy & Nuclear Physics (AREA)
• Health & Medical Sciences (AREA)
• Toxicology (AREA)
• Processing Of Stones Or Stones Resemblance Materials (AREA)
• Mechanical Treatment Of Semiconductor (AREA)

Applications Claiming Priority (7)

Publications (2)

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Country Status (6)

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Citations (7)

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• 1998
  • 1998-05-11 JP JP54937198A patent/JP2001525991A/ja active Pending
  • 1998-05-11 CA CA002290104A patent/CA2290104A1/fr not_active Abandoned
  • 1998-05-11 AU AU76851/98A patent/AU7685198A/en not_active Abandoned
  • 1998-05-11 CN CNB988049767A patent/CN1146973C/zh not_active Expired - Lifetime
  • 1998-05-11 WO PCT/US1998/009567 patent/WO1998052216A1/fr not_active Application Discontinuation
  • 1998-05-11 EP EP98924756A patent/EP0995227A4/fr not_active Withdrawn

Patent Citations (7)

Non-Patent Citations (2)

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