[go: up one dir, main page]

DE69913731D1 - Im wesentlichen defektfreie epitaktische siliziumscheiben - Google Patents

Im wesentlichen defektfreie epitaktische siliziumscheiben

Info

Publication number
DE69913731D1
DE69913731D1 DE69913731T DE69913731T DE69913731D1 DE 69913731 D1 DE69913731 D1 DE 69913731D1 DE 69913731 T DE69913731 T DE 69913731T DE 69913731 T DE69913731 T DE 69913731T DE 69913731 D1 DE69913731 D1 DE 69913731D1
Authority
DE
Germany
Prior art keywords
epitactic
free
essential defect
windows
silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69913731T
Other languages
English (en)
Other versions
DE69913731T2 (de
Inventor
Stagno Luciano Mule
Lu Fei
C Holzer
W Korb
J Falster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE69913731D1 publication Critical patent/DE69913731D1/de
Application granted granted Critical
Publication of DE69913731T2 publication Critical patent/DE69913731T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69913731T 1998-10-14 1999-10-13 Im wesentlichen defektfreie epitaktische siliziumscheiben Expired - Lifetime DE69913731T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10428898P 1998-10-14 1998-10-14
US104288P 1998-10-14
PCT/US1999/024067 WO2000022197A1 (en) 1998-10-14 1999-10-13 Epitaxial silicon wafers substantially free of grown-in defects

Publications (2)

Publication Number Publication Date
DE69913731D1 true DE69913731D1 (de) 2004-01-29
DE69913731T2 DE69913731T2 (de) 2004-10-14

Family

ID=22299653

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69913731T Expired - Lifetime DE69913731T2 (de) 1998-10-14 1999-10-13 Im wesentlichen defektfreie epitaktische siliziumscheiben

Country Status (8)

Country Link
US (3) US6284039B1 (de)
EP (1) EP1133590B1 (de)
JP (2) JP3904832B2 (de)
KR (1) KR20010034789A (de)
CN (1) CN1313651C (de)
DE (1) DE69913731T2 (de)
TW (1) TW448248B (de)
WO (1) WO2000022197A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100547122C (zh) * 1997-04-09 2009-10-07 Memc电子材料有限公司 缺陷密度低，空位占优势的硅
US6236104B1 (en) * 1998-09-02 2001-05-22 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
WO2000022197A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
US6312516B2 (en) * 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
US6458202B1 (en) * 1999-09-02 2002-10-01 Memc Electronic Materials, Inc. Process for preparing single crystal silicon having uniform thermal history
JP2001118801A (ja) * 1999-10-18 2001-04-27 Mitsubishi Materials Silicon Corp エピタキシャルウェーハ用基板およびこれを用いた半導体装置
CN1312326C (zh) * 2000-05-08 2007-04-25 Memc电子材料有限公司 消除自动掺杂和背面晕圈的外延硅晶片
DE10045694A1 (de) * 2000-09-15 2002-04-04 Infineon Technologies Ag Halbleiterspeicherzelle mit Grabenkondensator und Auswahltransistor und Verfahren zu ihrer Herstellung
US6858307B2 (en) * 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) * 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7008874B2 (en) * 2000-12-19 2006-03-07 Memc Electronics Materials, Inc. Process for reclaiming semiconductor wafers and reclaimed wafers
CN100446196C (zh) * 2001-06-22 2008-12-24 Memc电子材料有限公司 通过离子注入产生具有本征吸除的绝缘体衬底硅结构的方法
JP4567251B2 (ja) * 2001-09-14 2010-10-20 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
DE10259588B4 (de) * 2002-12-19 2008-06-19 Siltronic Ag Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium
DE112004001024T5 (de) * 2003-06-10 2006-06-01 Ade Corp., Westwood Verfahren und System zur Klassifizierung von an einer Oberfläche eines Substrats auftretenden Defekten unter Verwendung einer grafischen Darstellung von Vielkanal-Daten
JP2005251266A (ja) * 2004-03-03 2005-09-15 Shin Etsu Chem Co Ltd 磁気記録媒用基板体およびその製造方法
WO2006017154A2 (en) * 2004-07-09 2006-02-16 Ade Corporation System and method for integrated data transfer, archiving and purging of semiconductor wafer data
JP4824926B2 (ja) 2004-12-24 2011-11-30 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルシリコンウェハの製造方法
TW200733244A (en) * 2005-10-06 2007-09-01 Nxp Bv Semiconductor device
EP1772901B1 (de) * 2005-10-07 2012-07-25 Rohm and Haas Electronic Materials, L.L.C. Waferhalter und Verfahren zur Halbleiterverarbeitung
US7609874B2 (en) * 2005-12-21 2009-10-27 Honeywell International Inc. System and method for prediction of pitting corrosion growth
JP2009292663A (ja) * 2008-06-03 2009-12-17 Sumco Corp シリコン単結晶の育成方法
JP2009292662A (ja) * 2008-06-03 2009-12-17 Sumco Corp シリコン単結晶育成における肩形成方法
US9343379B2 (en) 2011-10-14 2016-05-17 Sunedison Semiconductor Limited Method to delineate crystal related defects
US11987900B2 (en) 2020-11-11 2024-05-21 Globalwafers Co., Ltd. Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3997368A (en) 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
JPS583375B2 (ja) 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶ウエハ−の製造方法
JPS59190300A (ja) 1983-04-08 1984-10-29 Hitachi Ltd 半導体製造方法および装置
JPS60136218A (ja) * 1983-12-23 1985-07-19 Nec Corp 半導体装置およびその製造方法
JPS62105998A (ja) 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
US5264189A (en) 1988-02-23 1993-11-23 Mitsubishi Materials Corporation Apparatus for growing silicon crystals
US4981549A (en) 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
JPH01298726A (ja) * 1988-05-27 1989-12-01 Hitachi Ltd 半導体ウエハの製造方法およびその半導体ウエハを用いた半導体装置
JPH02180789A (ja) 1989-01-05 1990-07-13 Kawasaki Steel Corp Ｓｉ単結晶の製造方法
JPH0633235B2 (ja) 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JPH0633236B2 (ja) 1989-09-04 1994-05-02 新日本製鐵株式会社 シリコン単結晶の熱処理方法および装置ならびに製造装置
JPH0729878B2 (ja) 1990-06-07 1995-04-05 三菱マテリアル株式会社 シリコンウエーハ
JP2818473B2 (ja) 1990-06-29 1998-10-30 日本碍子株式会社 自動車排ガス浄化用触媒コンバーター装置及び自動車排ガスの浄化方法
JPH04108682A (ja) 1990-08-30 1992-04-09 Fuji Electric Co Ltd 化合物半導体単結晶製造装置および製造方法
JP2613498B2 (ja) 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JP3016897B2 (ja) 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
JP2779556B2 (ja) * 1991-05-15 1998-07-23 三菱マテリアル株式会社 エピタキシャル基板およびその製造方法
JP2758093B2 (ja) 1991-10-07 1998-05-25 信越半導体株式会社 半導体ウェーハの製造方法
JPH0684925A (ja) 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
DE4490103T1 (de) 1993-01-06 1997-07-24 Nippon Steel Corp Verfahren und Vorrichtung zum Vorherbestimmen der Kristallqualität eines Halbleiter- Einkristalls
JPH0741383A (ja) 1993-07-29 1995-02-10 Nippon Steel Corp 半導体単結晶およびその製造方法
JP3274246B2 (ja) * 1993-08-23 2002-04-15 コマツ電子金属株式会社 エピタキシャルウェーハの製造方法
DE4414947C2 (de) 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls aus Silicium
IT1280041B1 (it) 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
JP3276500B2 (ja) 1994-01-14 2002-04-22 ワッカー・エヌエスシーイー株式会社 シリコンウェーハとその製造方法
US5474020A (en) 1994-05-06 1995-12-12 Texas Instruments Incorporated Oxygen precipitation control in czochralski-grown silicon cyrstals
JP3552278B2 (ja) 1994-06-30 2004-08-11 三菱住友シリコン株式会社 シリコン単結晶の製造方法
JP3285111B2 (ja) 1994-12-05 2002-05-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法
JPH08208374A (ja) 1995-01-25 1996-08-13 Nippon Steel Corp シリコン単結晶およびその製造方法
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
JP2826589B2 (ja) 1995-03-30 1998-11-18 住友シチックス株式会社 単結晶シリコン育成方法
JP3085146B2 (ja) 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JPH08337490A (ja) 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法
JP3006669B2 (ja) 1995-06-20 2000-02-07 信越半導体株式会社 結晶欠陥の均一なシリコン単結晶の製造方法およびその製造装置
JP4020987B2 (ja) 1996-01-19 2007-12-12 信越半導体株式会社 ウエーハ周辺部に結晶欠陥がないシリコン単結晶およびその製造方法
DE19613282A1 (de) 1996-04-03 1997-10-09 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
DE19637182A1 (de) 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
JPH10152395A (ja) 1996-11-21 1998-06-09 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
US5789309A (en) * 1996-12-30 1998-08-04 Memc Electronic Materials, Inc. Method and system for monocrystalline epitaxial deposition
US6045610A (en) 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
SG64470A1 (en) * 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
DE19711922A1 (de) 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
KR20040102230A (ko) 1997-04-09 2004-12-03 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 저결함밀도, 이상적 산소침전 실리콘
CN100547122C (zh) 1997-04-09 2009-10-07 Memc电子材料有限公司 缺陷密度低，空位占优势的硅
JPH1179889A (ja) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
US5922127A (en) * 1997-09-30 1999-07-13 Memc Electronic Materials, Inc. Heat shield for crystal puller
JP3919308B2 (ja) 1997-10-17 2007-05-23 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法ならびにこの方法で製造されたシリコン単結晶およびシリコンウエーハ
JP3596257B2 (ja) 1997-11-19 2004-12-02 三菱住友シリコン株式会社 シリコン単結晶ウェーハの製造方法
JP3634133B2 (ja) 1997-12-17 2005-03-30 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法及びシリコン単結晶ウエーハ
JP4147599B2 (ja) 1997-12-26 2008-09-10 株式会社Ｓｕｍｃｏ シリコン単結晶及びその製造方法
JP3955375B2 (ja) 1998-01-19 2007-08-08 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶ウエーハ
JP3627498B2 (ja) 1998-01-19 2005-03-09 信越半導体株式会社 シリコン単結晶の製造方法
DE19823962A1 (de) 1998-05-28 1999-12-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Einkristalls
JPH11349393A (ja) 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
US6077343A (en) 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
US6093913A (en) * 1998-06-05 2000-07-25 Memc Electronic Materials, Inc Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections
CN1326518A (zh) * 1998-06-26 2001-12-12 Memc电子材料有限公司 任意大直径无缺陷硅晶体的生长方法
JP4218080B2 (ja) * 1998-07-30 2009-02-04 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
US6236104B1 (en) * 1998-09-02 2001-05-22 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
WO2000022197A1 (en) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
DE10240358A1 (de) 2002-09-02 2004-03-11 Wabco Gmbh & Co. Ohg Luftfederungsanlage für ein Fahrzeug

Also Published As

Publication number Publication date
CN1313651C (zh) 2007-05-02
WO2000022197A1 (en) 2000-04-20
EP1133590B1 (de) 2003-12-17
TW448248B (en) 2001-08-01
US20030205191A1 (en) 2003-11-06
WO2000022197A9 (en) 2000-10-26
JP2004224694A (ja) 2004-08-12
KR20010034789A (ko) 2001-04-25
CN1307653A (zh) 2001-08-08
US20010039916A1 (en) 2001-11-15
JP3904832B2 (ja) 2007-04-11
US6565649B2 (en) 2003-05-20
JP2003515516A (ja) 2003-05-07
DE69913731T2 (de) 2004-10-14
US7097718B2 (en) 2006-08-29
US6284039B1 (en) 2001-09-04
EP1133590A1 (de) 2001-09-19

Similar Documents

Publication Publication Date Title
DE69913731D1 (de) Im wesentlichen defektfreie epitaktische siliziumscheiben
ID16284A (id) Selaput jendela
DE69738222D1 (de) Fensterheber
DE60042307D1 (de) Fensterbeschlag
DE69812235D1 (de) Fensterheberantriebsvorrichtung
DE59900864D1 (de) Vernetzungsbaustein
FI4264U1 (fi) Ikkunan karmi
KR960002028U (ko) 창문용 프레임
DE69909358D1 (de) Rolladen
KR960008369U (ko) 창용 새시
FI982722L (fi) Diagnostinen menetelmä
ATA58098A (de) Kastenfenster
KR970049790U (ko) 창문의 창문틀
KR960005378U (ko) 샷시창틀 연결구
NL1012450A1 (nl) Jaloezierijgstation.
KR960011411U (ko) 창문용 방범창
DE69628343D1 (de) Rafflamellenstore
ES1040846Y (es) Dispositivo de motorizacion de persianas.
DK1091875T3 (da) Pillesikkert eller pillemodstandsdygtigt lukke
IT1306362B1 (it) Melario con finestra
FI104010B1 (fi) Ikkuna
FIU980572U0 (fi) Ikkunarakenne
KR960023042U (ko) 창문용 방풍장치
KR960031775U (ko) 돌출창
DE59901803D1 (de) Einschubrahmen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition