[go: up one dir, main page]

DE69832359D1 - Halbleitervorrichtung -anordnung und -schaltungen - Google Patents

Halbleitervorrichtung -anordnung und -schaltungen

Info

Publication number
DE69832359D1
DE69832359D1 DE69832359T DE69832359T DE69832359D1 DE 69832359 D1 DE69832359 D1 DE 69832359D1 DE 69832359 T DE69832359 T DE 69832359T DE 69832359 T DE69832359 T DE 69832359T DE 69832359 D1 DE69832359 D1 DE 69832359D1
Authority
DE
Germany
Prior art keywords
circuits
semiconductor device
device arrangement
arrangement
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69832359T
Other languages
English (en)
Other versions
DE69832359T2 (de
Inventor
Jeremy Grover
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB9715168A external-priority patent/GB9715168D0/en
Priority claimed from GBGB9801240.4A external-priority patent/GB9801240D0/en
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69832359D1 publication Critical patent/DE69832359D1/de
Publication of DE69832359T2 publication Critical patent/DE69832359T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
DE69832359T 1997-07-19 1998-06-29 Halbleitervorrichtung -anordnung und -schaltungen Expired - Fee Related DE69832359T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB9715168A GB9715168D0 (en) 1997-07-19 1997-07-19 Semiconductor device assemblies and circuits
GB9715168 1997-07-19
GB9801240 1998-01-22
GBGB9801240.4A GB9801240D0 (en) 1998-01-22 1998-01-22 Semiconductor device assemblies and circuits
PCT/IB1998/000994 WO1999004433A2 (en) 1997-07-19 1998-06-29 Mcm semiconductor device assemblies and circuits

Publications (2)

Publication Number Publication Date
DE69832359D1 true DE69832359D1 (de) 2005-12-22
DE69832359T2 DE69832359T2 (de) 2006-08-03

Family

ID=26311900

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69832359T Expired - Fee Related DE69832359T2 (de) 1997-07-19 1998-06-29 Halbleitervorrichtung -anordnung und -schaltungen

Country Status (6)

Country Link
US (1) US6055148A (de)
EP (1) EP0927433B1 (de)
JP (1) JP4014652B2 (de)
KR (1) KR100632137B1 (de)
DE (1) DE69832359T2 (de)
WO (1) WO1999004433A2 (de)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164800A (ja) 1998-11-30 2000-06-16 Mitsubishi Electric Corp 半導体モジュール
DE19935100B4 (de) * 1999-07-27 2004-10-28 Infineon Technologies Ag Halbbrückenkonfiguration
US6392864B1 (en) * 1999-09-10 2002-05-21 Alliedsignal Truck Brake Systems Co. Electrical driver circuit for direct acting cantilever solenoid valve
DE10030875C1 (de) * 2000-06-23 2002-03-07 Compact Dynamics Gmbh Halbbrückenbaugruppe
JP4146607B2 (ja) * 2000-07-28 2008-09-10 三菱電機株式会社 パワーモジュール
DE10038968A1 (de) * 2000-08-10 2002-03-07 Infineon Technologies Ag Schaltungsanordnung mit wenigstens zwei Halbleiterkörpern und einem Kühlkörper
EP1221718A1 (de) * 2001-01-08 2002-07-10 STMicroelectronics S.r.l. Integriertes Leistungsbauelement mit verbesserter Effizienz und reduzierten Gesamtabmessungen
KR20030031234A (ko) * 2001-10-12 2003-04-21 주식회사 만도 고속 턴 온 다이오드를 이용한 솔레노이드 구동장치
ITMI20012284A1 (it) * 2001-10-30 2003-04-30 St Microelectronics Srl Metodo per il perfezionamento della connessione elettrica tra un dispositivo elettronico di potenza ed il suo package
JP2003258180A (ja) * 2002-02-27 2003-09-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2005011986A (ja) * 2003-06-19 2005-01-13 Sanyo Electric Co Ltd 半導体装置
EP1657750B1 (de) * 2003-08-18 2018-12-05 Sanken Electric Co., Ltd. Halbleiterbauelement
KR100618435B1 (ko) * 2004-06-01 2006-08-30 국방과학연구소 직류 전동기 구동장치
US20060145312A1 (en) * 2005-01-05 2006-07-06 Kai Liu Dual flat non-leaded semiconductor package
US7884454B2 (en) 2005-01-05 2011-02-08 Alpha & Omega Semiconductor, Ltd Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
US7898092B2 (en) * 2007-11-21 2011-03-01 Alpha & Omega Semiconductor, Stacked-die package for battery power management
US7511361B2 (en) * 2005-01-05 2009-03-31 Xiaotian Zhang DFN semiconductor package having reduced electrical resistance
ATE412648T1 (de) 2005-03-21 2008-11-15 Pfizer Ltd Substituierte triazolderivate als oxytocinantagonisten
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
JP2007019215A (ja) * 2005-07-07 2007-01-25 Sanken Electric Co Ltd 半導体装置及びその製法
JP2007027432A (ja) * 2005-07-15 2007-02-01 Sanken Electric Co Ltd 半導体装置
DE102005034012A1 (de) * 2005-07-18 2006-11-09 Infineon Technologies Ag Leistungshalbleiterbauteil, insbesondere für das Treiben induktionsarmer Lasten, und Verfahren zur Herstellung eines Leistungshalbleiterbauteils
KR100821127B1 (ko) * 2006-09-28 2008-04-14 한국전자통신연구원 열전대를 구비하는 고전력 소자 및 그 제조방법
US7996987B2 (en) * 2006-10-17 2011-08-16 Broadcom Corporation Single footprint family of integrated power modules
JP2008244388A (ja) * 2007-03-29 2008-10-09 Nec Electronics Corp 半導体装置
JP4600576B2 (ja) * 2008-05-08 2010-12-15 株式会社デンソー 半導体装置およびその製造方法
JP4962409B2 (ja) * 2008-05-19 2012-06-27 サンケン電気株式会社 半導体装置及びその製法
JP2008258643A (ja) * 2008-05-19 2008-10-23 Sanken Electric Co Ltd 半導体装置
JP5560538B2 (ja) * 2008-05-22 2014-07-30 富士電機株式会社 半導体装置の製造方法
JP2010171169A (ja) * 2009-01-22 2010-08-05 Sanken Electric Co Ltd 半導体モジュール及びその制御方法
US8164199B2 (en) * 2009-07-31 2012-04-24 Alpha and Omega Semiconductor Incorporation Multi-die package
US9257375B2 (en) 2009-07-31 2016-02-09 Alpha and Omega Semiconductor Inc. Multi-die semiconductor package
DE102011115886B4 (de) 2011-10-15 2020-06-18 Danfoss Silicon Power Gmbh Verfahren zur Schaffung einer Verbindung eines Leistungshalbleiterchips mit oberseitigen Potentialflächen zu Dickdrähten
DE102011115887A1 (de) * 2011-10-15 2013-04-18 Danfoss Silicon Power Gmbh Leistungshalbleiterchip mit oberseitigen Potentialflächen
US8766430B2 (en) 2012-06-14 2014-07-01 Infineon Technologies Ag Semiconductor modules and methods of formation thereof
US9041460B2 (en) 2013-08-12 2015-05-26 Infineon Technologies Ag Packaged power transistors and power packages
EP3018710B1 (de) * 2014-11-10 2020-08-05 Nxp B.V. Anordnung von Halbleiterbauelementen
US9870984B2 (en) * 2014-12-10 2018-01-16 Texas Instruments Incorporated Power field-effect transistor (FET), pre-driver, controller, and sense resistor integration for multi-phase power applications
DE102015113421B4 (de) 2015-08-14 2019-02-21 Danfoss Silicon Power Gmbh Verfahren zum Herstellen von Halbleiterchips
JP7059677B2 (ja) * 2018-02-16 2022-04-26 富士電機株式会社 積層型集積回路
JP7528802B2 (ja) * 2021-02-01 2024-08-06 富士電機株式会社 半導体装置及び温度測定方法
DE102021202583A1 (de) 2021-03-17 2022-09-22 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Überprüfung von Mehrfachbondverbindungen
KR102585000B1 (ko) 2021-12-15 2023-10-06 한국생산기술연구원 GaN 하이브리드 모듈
US12237108B2 (en) * 2022-06-29 2025-02-25 Smart Wires Inc. Power dumping driver for magnetic actuator

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5030428B1 (de) * 1969-03-31 1975-10-01
JPS5929143B2 (ja) * 1978-01-07 1984-07-18 株式会社東芝 電力用半導体装置
US4402004A (en) * 1978-01-07 1983-08-30 Tokyo Shibaura Denki Kabushiki Kaisha High current press pack semiconductor device having a mesa structure
DE2812700A1 (de) * 1978-03-23 1979-12-06 Bbc Brown Boveri & Cie Halbleiteranordnung mit zwei halbleiterelementen
JPS5892231A (ja) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp 半導体素子のボンデイング方法
US4802099A (en) * 1986-01-03 1989-01-31 International Business Machines Corporation Physical parameter balancing of circuit islands in integrated circuit wafers
US5444219A (en) * 1990-09-24 1995-08-22 U.S. Philips Corporation Temperature sensing device and a temperature sensing circuit using such a device
GB2248151A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated Temperature sensing and protection circuit.
DE69109468T2 (de) * 1991-05-23 1995-12-14 Ansaldo Trasporti Spa Elektronische Leistungsanordnung realisiert durch eine Reihe elementarer Halbleiterbauelemente in Parallelverbindung und verwandtes Herstellungsverfahren.
JPH065778A (ja) * 1992-06-19 1994-01-14 Fujitsu Ltd 半導体装置
WO1996025839A1 (en) * 1995-02-16 1996-08-22 Micromodule Systems, Inc. Multiple chip module mounting assembly and computer using same
GB9513420D0 (en) * 1995-06-30 1995-09-06 Philips Electronics Uk Ltd Power semiconductor devices

Also Published As

Publication number Publication date
EP0927433A2 (de) 1999-07-07
DE69832359T2 (de) 2006-08-03
KR20000068590A (ko) 2000-11-25
WO1999004433A3 (en) 1999-04-15
JP4014652B2 (ja) 2007-11-28
WO1999004433A2 (en) 1999-01-28
JP2001501043A (ja) 2001-01-23
US6055148A (en) 2000-04-25
KR100632137B1 (ko) 2006-10-19
EP0927433B1 (de) 2005-11-16

Similar Documents

Publication Publication Date Title
DE69832359D1 (de) Halbleitervorrichtung -anordnung und -schaltungen
DE69827863D1 (de) Integriertes Halbleiterschaltkreisbauelement
DE69637769D1 (de) Halbleitervorrichtung
DE69738008D1 (de) Halbleiterbauelement
DE69739242D1 (de) Halbleitervorrichtung
DE19823069B8 (de) Halbleiterbauelement
DE69809623D1 (de) Logische MOS-Schaltung und Halbleitervorrichtung
DE69739692D1 (de) Integrierte halbleiterschaltungsvorrichtung
DE69824972D1 (de) Integrierter halbleiterschaltkreis
DE69828234D1 (de) Integrierte Halbleiterschaltungsanordnung
DE69830962D1 (de) Integrierte Halbleiterschaltungsanordnung
DE69637488D1 (de) Halbleiter und Halbleitermodul
DE69830883D1 (de) Halbleiterbauelement und mit diesem Bauelement bestückte Leiterplatte
DE69727373D1 (de) Halbleitervorrichtung
KR970004021A (ko) 반도체 기억장치 및 반도체 집적회로장치
DE69830772D1 (de) Integrierte Halbleiterschaltungsanordnung
DE69637698D1 (de) Halbleitervorrichtung
DE69637809D1 (de) Halbleiteranordnung
DE69628902D1 (de) Halbleitervorrichtung und Halbleitermodul
DE69837135D1 (de) Integrierte Halbleiterschaltungsanordnung
KR970004347A (ko) 반도체 집적회로 장치
DE59508581D1 (de) Halbleiterbauelement
DE69830878D1 (de) Integrierte Halbleiterschaltungsanordnung
DE69737320D1 (de) Halbleitervorrichtung
DE19880680T1 (de) Halbleiterbauelement-Testgerät

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee