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DE69829509D1 - Flüssigkristallvorrichtung - Google Patents

Flüssigkristallvorrichtung

Info

Publication number
DE69829509D1
DE69829509D1 DE69829509T DE69829509T DE69829509D1 DE 69829509 D1 DE69829509 D1 DE 69829509D1 DE 69829509 T DE69829509 T DE 69829509T DE 69829509 T DE69829509 T DE 69829509T DE 69829509 D1 DE69829509 D1 DE 69829509D1
Authority
DE
Germany
Prior art keywords
liquid crystal
crystal device
liquid
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69829509T
Other languages
English (en)
Other versions
DE69829509T2 (de
Inventor
Masao Murade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69829509D1 publication Critical patent/DE69829509D1/de
Publication of DE69829509T2 publication Critical patent/DE69829509T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/74—Projection arrangements for image reproduction, e.g. using eidophor
    • H04N5/7416—Projection arrangements for image reproduction, e.g. using eidophor involving the use of a spatial light modulator, e.g. a light valve, controlled by a video signal
    • H04N5/7441—Projection arrangements for image reproduction, e.g. using eidophor involving the use of a spatial light modulator, e.g. a light valve, controlled by a video signal the modulator being an array of liquid crystal cells

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
DE69829509T 1997-02-27 1998-02-27 Flüssigkristallvorrichtung Expired - Lifetime DE69829509T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP4437897 1997-02-27
JP4437897 1997-02-27
JP30125197A JP3716580B2 (ja) 1997-02-27 1997-10-31 液晶装置及びその製造方法、並びに投写型表示装置
JP30125197 1997-10-31

Publications (2)

Publication Number Publication Date
DE69829509D1 true DE69829509D1 (de) 2005-04-28
DE69829509T2 DE69829509T2 (de) 2005-11-17

Family

ID=26384253

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69829509T Expired - Lifetime DE69829509T2 (de) 1997-02-27 1998-02-27 Flüssigkristallvorrichtung
DE69818536T Expired - Lifetime DE69818536T2 (de) 1997-02-27 1998-02-27 Flüssigkristallvorrichtung, ihr Herstellungsverfahren und Projektionsanzeigevorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69818536T Expired - Lifetime DE69818536T2 (de) 1997-02-27 1998-02-27 Flüssigkristallvorrichtung, ihr Herstellungsverfahren und Projektionsanzeigevorrichtung

Country Status (7)

Country Link
US (3) US6330044B1 (de)
EP (2) EP1132765B1 (de)
JP (1) JP3716580B2 (de)
KR (2) KR100529811B1 (de)
CN (3) CN1183403C (de)
DE (2) DE69829509T2 (de)
TW (1) TW374858B (de)

Families Citing this family (123)

* Cited by examiner, † Cited by third party
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KR100288772B1 (ko) 1998-11-12 2001-05-02 윤종용 액정 표시 장치 및 그 제조 방법
US6277679B1 (en) 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
KR100469109B1 (ko) 1998-11-26 2005-02-02 세이코 엡슨 가부시키가이샤 전기 광학 장치 및 그 제조방법 및 전자기기
JP3107075B2 (ja) * 1998-12-14 2000-11-06 日本電気株式会社 液晶表示装置
JP4076648B2 (ja) * 1998-12-18 2008-04-16 株式会社半導体エネルギー研究所 半導体装置
US6348959B1 (en) * 1998-12-21 2002-02-19 Philips Electronics North America Corporation Reflective LCD with dark borders
JP4008133B2 (ja) * 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
JP4202502B2 (ja) * 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
EP1020920B1 (de) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Halbleiteranordnung mit Treiber-TFT und Pixel-TFT auf einem Substrat
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US6593592B1 (en) * 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
US7122835B1 (en) * 1999-04-07 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and a method of manufacturing the same
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JP5509166B2 (ja) * 1999-06-29 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP4531164B2 (ja) * 1999-08-23 2010-08-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4363723B2 (ja) * 1999-09-02 2009-11-11 東芝モバイルディスプレイ株式会社 液晶表示装置
CN1195243C (zh) * 1999-09-30 2005-03-30 三星电子株式会社 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法
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JP4099672B2 (ja) * 2004-12-21 2008-06-11 セイコーエプソン株式会社 半導体装置
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US6704068B2 (en) 2004-03-09
US6330044B1 (en) 2001-12-11
CN1515929A (zh) 2004-07-28
EP0862077A2 (de) 1998-09-02
KR100529811B1 (ko) 2006-03-20
CN1900801A (zh) 2007-01-24
TW374858B (en) 1999-11-21
KR100566693B1 (ko) 2006-04-03
EP0862077B1 (de) 2003-10-01
DE69829509T2 (de) 2005-11-17
CN1318888C (zh) 2007-05-30
US20010030722A1 (en) 2001-10-18
DE69818536T2 (de) 2004-08-05
EP0862077A3 (de) 1999-07-14
DE69818536D1 (de) 2003-11-06
EP1132765B1 (de) 2005-03-23
EP1132765A2 (de) 2001-09-12
JP3716580B2 (ja) 2005-11-16
CN1195786A (zh) 1998-10-14
US20010019384A1 (en) 2001-09-06
US6717633B2 (en) 2004-04-06
EP1132765A3 (de) 2001-11-21
KR19980071672A (ko) 1998-10-26

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