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DE69407158D1 - Magnetoresistive anordnung und diese verwendender magnetkopf - Google Patents

Magnetoresistive anordnung und diese verwendender magnetkopf

Info

Publication number
DE69407158D1
DE69407158D1 DE69407158T DE69407158T DE69407158D1 DE 69407158 D1 DE69407158 D1 DE 69407158D1 DE 69407158 T DE69407158 T DE 69407158T DE 69407158 T DE69407158 T DE 69407158T DE 69407158 D1 DE69407158 D1 DE 69407158D1
Authority
DE
Germany
Prior art keywords
magnet head
magnetoresistive
arrangement
magnetoresistive arrangement
magnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69407158T
Other languages
English (en)
Other versions
DE69407158T2 (de
Inventor
Martinus Adela Maria Gijs
Paul Joseph Kelly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69407158D1 publication Critical patent/DE69407158D1/de
Application granted granted Critical
Publication of DE69407158T2 publication Critical patent/DE69407158T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
DE69407158T 1993-10-06 1994-09-13 Magnetoresistive anordnung und diese verwendender magnetkopf Expired - Fee Related DE69407158T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP93202835 1993-10-06
PCT/IB1994/000275 WO1995010123A1 (en) 1993-10-06 1994-09-13 Magneto-resistance device, and magnetic head employing such a device

Publications (2)

Publication Number Publication Date
DE69407158D1 true DE69407158D1 (de) 1998-01-15
DE69407158T2 DE69407158T2 (de) 1998-05-28

Family

ID=8214124

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69407158T Expired - Fee Related DE69407158T2 (de) 1993-10-06 1994-09-13 Magnetoresistive anordnung und diese verwendender magnetkopf

Country Status (7)

Country Link
US (1) US6205008B1 (de)
EP (1) EP0672303B1 (de)
JP (1) JPH08504303A (de)
KR (1) KR950704820A (de)
DE (1) DE69407158T2 (de)
SG (1) SG55066A1 (de)
WO (1) WO1995010123A1 (de)

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US6741494B2 (en) 1995-04-21 2004-05-25 Mark B. Johnson Magnetoelectronic memory element with inductively coupled write wires
US5767673A (en) * 1995-09-14 1998-06-16 Lucent Technologies Inc. Article comprising a manganite magnetoresistive element and magnetically soft material
FR2743930B1 (fr) * 1996-01-19 2000-04-07 Fujitsu Ltd Capteur magnetique pour lecture de supports d'enregistrement
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5835314A (en) * 1996-04-17 1998-11-10 Massachusetts Institute Of Technology Tunnel junction device for storage and switching of signals
JPH11510911A (ja) * 1996-06-12 1999-09-21 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 磁気抵抗式磁界センサ
US5729410A (en) * 1996-11-27 1998-03-17 International Business Machines Corporation Magnetic tunnel junction device with longitudinal biasing
US5801984A (en) * 1996-11-27 1998-09-01 International Business Machines Corporation Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment
US5930087A (en) * 1997-11-20 1999-07-27 Hewlett-Packard Company Robust recording head for near-contact operation
US5936293A (en) * 1998-01-23 1999-08-10 International Business Machines Corporation Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
FR2774774B1 (fr) * 1998-02-11 2000-03-03 Commissariat Energie Atomique Magnetoresistance a effet tunnel et capteur magnetique utilisant une telle magnetoresistance
US6023395A (en) * 1998-05-29 2000-02-08 International Business Machines Corporation Magnetic tunnel junction magnetoresistive sensor with in-stack biasing
US6005753A (en) * 1998-05-29 1999-12-21 International Business Machines Corporation Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias
US6411478B1 (en) 1999-02-11 2002-06-25 Seagate Technology Llc Spin tunnel junction recording heads using an edge junction structure with CIP
JP4572434B2 (ja) * 1999-03-23 2010-11-04 パナソニック株式会社 磁気抵抗効果素子、磁気抵抗効果型ヘッド、及びメモリ−素子
US6833980B1 (en) * 1999-05-10 2004-12-21 Hitachi, Ltd. Magnetoelectric device
JP2003505878A (ja) * 1999-07-22 2003-02-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 磁気トンネル接合装置を製造する方法
US6643103B1 (en) * 2000-01-05 2003-11-04 Seagate Technology Llc Very high linear resolution CPP differential dual spin valve magnetoresistive head
US6721149B1 (en) * 2000-02-11 2004-04-13 Western Digital (Fremont), Inc. Tunneling magnetoresistance spin-valve read sensor with LaNiO3 spacer
JP3618654B2 (ja) * 2000-09-11 2005-02-09 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気記録再生装置
JP2002217030A (ja) * 2001-01-23 2002-08-02 Hitachi Ltd 磁気抵抗効果磁気センサー及び磁気記録再生装置
US6693776B2 (en) * 2001-03-08 2004-02-17 Hitachi Global Storage Technologies Netherlands B.V. Spin valve sensor with a spin filter and specular reflector layer
US6661626B2 (en) 2001-03-20 2003-12-09 International Business Machines Corporation Tunnel valve sensor having a pinned layer structure with an iron oxide (Fe3O4) layer
JP2003031867A (ja) 2001-07-17 2003-01-31 Hitachi Ltd 酸化物磁性層と金属磁性膜を積層した磁気抵抗効果素子
US6731477B2 (en) 2001-09-20 2004-05-04 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-plane spin-valve sensor with metallic oxide barrier layer and method of fabrication
US6552554B1 (en) * 2001-12-06 2003-04-22 The United States Of America As Represented By The Secretary Of The Navy Testing current perpendicular to plane giant magnetoresistance multilayer devices
JP3607678B2 (ja) 2002-01-24 2005-01-05 アルプス電気株式会社 磁気検出素子
US6747301B1 (en) 2002-02-06 2004-06-08 Western Digital (Fremont), Inc. Spin dependent tunneling barriers formed with a magnetic alloy
JP2003248909A (ja) * 2002-02-27 2003-09-05 Hitachi Ltd 磁気ヘッド及びそれを備える磁気記録再生装置、並びに磁気メモリ
US6876522B2 (en) 2002-04-18 2005-04-05 Seagate Technology Llc GMR spin valve structure using heusler alloy
US7170721B2 (en) * 2002-06-25 2007-01-30 Quantum Corporation Method of producing flux guides in magnetic recording heads
JP4245318B2 (ja) 2002-08-29 2009-03-25 アルプス電気株式会社 磁気検出素子
JP4237991B2 (ja) 2002-08-29 2009-03-11 アルプス電気株式会社 磁気検出素子
US7428127B2 (en) * 2002-12-24 2008-09-23 Fujitsu Limited CPP magnetoresistive effect element and magnetic storage device having a CPP magnetoresistive effect element
JP4244312B2 (ja) * 2003-10-02 2009-03-25 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
JP2005116703A (ja) * 2003-10-06 2005-04-28 Alps Electric Co Ltd 磁気検出素子
JP2005116701A (ja) * 2003-10-06 2005-04-28 Alps Electric Co Ltd 磁気検出素子
US7016168B2 (en) * 2003-11-20 2006-03-21 Headway Technologies, Inc. Method of increasing CPP GMR in a spin valve structure
US7352541B2 (en) * 2004-04-30 2008-04-01 Hitachi Global Storage Technologies Netherlands B.V. CPP GMR using Fe based synthetic free layer
US7477490B2 (en) * 2004-06-30 2009-01-13 Seagate Technology Llc Single sensor element that is naturally differentiated
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US7466525B2 (en) 2004-09-03 2008-12-16 Tdk Corporation Magnetic sensing element including laminated film composed of half-metal and NiFe alloy as free layer
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JP5044157B2 (ja) * 2006-07-11 2012-10-10 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気再生装置
JP4388093B2 (ja) 2007-03-27 2009-12-24 株式会社東芝 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置
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JP5150284B2 (ja) 2008-01-30 2013-02-20 株式会社東芝 磁気抵抗効果素子およびその製造方法
JP5039006B2 (ja) * 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
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JP5032430B2 (ja) * 2008-09-26 2012-09-26 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
JP5039007B2 (ja) * 2008-09-26 2012-10-03 株式会社東芝 磁気抵抗効果素子の製造方法、磁気抵抗効果素子、磁気ヘッドアセンブリ及び磁気記録再生装置
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Also Published As

Publication number Publication date
EP0672303B1 (de) 1997-12-03
SG55066A1 (en) 1999-06-22
KR950704820A (ko) 1995-11-20
JPH08504303A (ja) 1996-05-07
WO1995010123A1 (en) 1995-04-13
DE69407158T2 (de) 1998-05-28
EP0672303A1 (de) 1995-09-20
US6205008B1 (en) 2001-03-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8339 Ceased/non-payment of the annual fee