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DE69300064D1 - Speicher-Leseschaltung mit Vorladung und Ausgleichung vor dem Lesen. - Google Patents

Speicher-Leseschaltung mit Vorladung und Ausgleichung vor dem Lesen.

Info

Publication number
DE69300064D1
DE69300064D1 DE69300064T DE69300064T DE69300064D1 DE 69300064 D1 DE69300064 D1 DE 69300064D1 DE 69300064 T DE69300064 T DE 69300064T DE 69300064 T DE69300064 T DE 69300064T DE 69300064 D1 DE69300064 D1 DE 69300064D1
Authority
DE
Germany
Prior art keywords
charging
memory read
read circuit
before reading
equalization before
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69300064T
Other languages
English (en)
Other versions
DE69300064T2 (de
Inventor
Jean-Marie Gaultier
Emilio Yero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics SA
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA, SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics SA
Application granted granted Critical
Publication of DE69300064D1 publication Critical patent/DE69300064D1/de
Publication of DE69300064T2 publication Critical patent/DE69300064T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
DE69300064T 1992-07-24 1993-07-19 Speicher-Leseschaltung mit Vorladung und Ausgleichung vor dem Lesen. Expired - Fee Related DE69300064T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9209199A FR2694119B1 (fr) 1992-07-24 1992-07-24 Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture.

Publications (2)

Publication Number Publication Date
DE69300064D1 true DE69300064D1 (de) 1995-03-23
DE69300064T2 DE69300064T2 (de) 1995-06-22

Family

ID=9432266

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69300064T Expired - Fee Related DE69300064T2 (de) 1992-07-24 1993-07-19 Speicher-Leseschaltung mit Vorladung und Ausgleichung vor dem Lesen.

Country Status (5)

Country Link
US (3) US5581511A (de)
EP (1) EP0585150B1 (de)
JP (1) JP3398722B2 (de)
DE (1) DE69300064T2 (de)
FR (1) FR2694119B1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9423035D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics Voltage boost circuit for a memory device
KR100276536B1 (ko) * 1995-02-10 2001-01-15 로데릭 더블류 루이스 판독바이어싱회로,고속감지회로및감지방법
US6108237A (en) 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5663915A (en) * 1995-06-07 1997-09-02 United Memories, Inc. Amplifier and method for sensing having a pre-bias or coupling step
JPH09153285A (ja) * 1995-11-29 1997-06-10 Mitsubishi Electric Corp 増幅回路および相補型増幅回路
WO1997030454A1 (fr) * 1996-02-19 1997-08-21 Citizen Watch Co., Ltd. Memoire remanente a semi-conducteurs
FR2752324B1 (fr) * 1996-08-08 1998-09-18 Sgs Thomson Microelectronics Memoire non volatile en circuit-integre a lecture rapide
FR2760888B1 (fr) * 1997-03-11 1999-05-07 Sgs Thomson Microelectronics Circuit de lecture pour memoire adapte a la mesure des courants de fuite
IT1298939B1 (it) * 1998-02-23 2000-02-07 Sgs Thomson Microelectronics Amplificatore di rilevamento statico a retroazione per memorie non volatili
US6370057B1 (en) 1999-02-24 2002-04-09 Kabushiki Kaisha Toshiba Semiconductor memory device having plate lines and precharge circuits
KR100287884B1 (ko) * 1998-11-26 2001-05-02 김영환 반도체 메모리소자의 센싱회로 및 그를 이용한센싱방법
IT1307686B1 (it) * 1999-04-13 2001-11-14 St Microelectronics Srl Circuito di lettura per celle di memoria non volatile senzalimitazioni della tensione di alimentazione.
DE10019481C1 (de) * 2000-04-19 2001-11-29 Infineon Technologies Ag Schaltungsanordnung zum Auslesen einer Speicherzelle mit einem ferroelektrischen Kondensator
US6747892B2 (en) * 2000-11-21 2004-06-08 Sandisk Corporation Sense amplifier for multilevel non-volatile integrated memory devices
NL1016779C2 (nl) * 2000-12-02 2002-06-04 Cornelis Johannes Maria V Rijn Matrijs, werkwijze voor het vervaardigen van precisieproducten met behulp van een matrijs, alsmede precisieproducten, in het bijzonder microzeven en membraanfilters, vervaardigd met een dergelijke matrijs.
US7177181B1 (en) * 2001-03-21 2007-02-13 Sandisk 3D Llc Current sensing method and apparatus particularly useful for a memory array of cells having diode-like characteristics
JP2003085968A (ja) * 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置の読み出し回路
JP2003085966A (ja) * 2001-09-07 2003-03-20 Canon Inc 磁気メモリ装置の読み出し回路
US6600690B1 (en) * 2002-06-28 2003-07-29 Motorola, Inc. Sense amplifier for a memory having at least two distinct resistance states
US6590804B1 (en) * 2002-07-16 2003-07-08 Hewlett-Packard Development Company, L.P. Adjustable current mode differential amplifier
EP1505605A1 (de) * 2003-08-06 2005-02-09 STMicroelectronics S.r.l. Verbesserte Leseanordnung für einen Halbleiterspeicher mit Bitleitungs-Vorladungs- und -Entladungsfunktionen
JP4028840B2 (ja) * 2003-12-17 2007-12-26 シャープ株式会社 半導体読み出し回路
US7369450B2 (en) * 2006-05-26 2008-05-06 Freescale Semiconductor, Inc. Nonvolatile memory having latching sense amplifier and method of operation
JP5607870B2 (ja) * 2008-04-25 2014-10-15 ピーエスフォー ルクスコ エスエイアールエル 電流センス回路及びこれを備えた半導体記憶装置
EP2299450B1 (de) * 2009-09-18 2013-03-27 STMicroelectronics Srl Leseverstärkerschaltung für nichtflüchtige Speicher, die bei niedrigen Netzspannungen arbeiten
CN102314951A (zh) * 2010-06-30 2012-01-11 四川和芯微电子股份有限公司 电流检测方法
IT201700114539A1 (it) * 2017-10-11 2019-04-11 St Microelectronics Srl Circuito e metodo di lettura con migliorate caratteristiche elettriche per un dispositivo di memoria non volatile

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2569054B1 (fr) * 1984-08-10 1986-11-28 Eurotechnique Sa Dispositif de neutralisation de l'acces a une zone a proteger d'un circuit integre
US4598389A (en) * 1984-10-01 1986-07-01 Texas Instruments Incorporated Single-ended CMOS sense amplifier
US4813023A (en) * 1986-10-21 1989-03-14 Brooktree Corporation System employing negative feedback for decreasing the response time of a cell
FR2611972B1 (fr) * 1987-03-03 1989-05-19 Thomson Semiconducteurs Procede d'adressage d'elements redondants d'une memoire integree et dispositif permettant de mettre en oeuvre le procede
US5058069A (en) * 1987-03-03 1991-10-15 Thomson Semiconducteurs Device for addressing of redundant elements of an integrated circuit memory
EP0312142B1 (de) * 1987-10-12 1992-09-02 Koninklijke Philips Electronics N.V. Ausleseschaltung einer Verzögerungsschaltung
FR2629248B1 (fr) * 1988-03-25 1992-04-24 Sgs Thomson Microelectronics Procede de test de memoire a programmation unique et memoire correspondante
US5204838A (en) * 1988-10-28 1993-04-20 Fuji Xerox Co., Ltd. High speed readout circuit
JPH0371495A (ja) * 1989-08-11 1991-03-27 Sony Corp 紫外線消去型不揮発性メモリ装置
US5027003A (en) * 1989-12-29 1991-06-25 Texas Instruments Incorporated Read/write switching circuit
US5189322A (en) * 1990-03-28 1993-02-23 Advanced Micro Devices, Inc. Low-power sense amplifier with feedback
FR2670061B1 (fr) * 1990-11-30 1996-09-20 Bull Sa Procede et dispositif de transfert de signaux binaires differentiels et application aux additionneurs a selection de retenue.
FR2698998B1 (fr) * 1992-12-09 1995-02-03 Sgs Thomson Microelectronics Mémoire eeprom organisée en mots de plusieurs bits.

Also Published As

Publication number Publication date
DE69300064T2 (de) 1995-06-22
US5581511A (en) 1996-12-03
EP0585150A1 (de) 1994-03-02
FR2694119A1 (fr) 1994-01-28
FR2694119B1 (fr) 1994-08-26
US5638332A (en) 1997-06-10
JPH06215586A (ja) 1994-08-05
EP0585150B1 (de) 1995-02-15
JP3398722B2 (ja) 2003-04-21
US5544114A (en) 1996-08-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee