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IT1298939B1 - Amplificatore di rilevamento statico a retroazione per memorie non volatili - Google Patents

Amplificatore di rilevamento statico a retroazione per memorie non volatili

Info

Publication number
IT1298939B1
IT1298939B1 IT98MI000352A ITMI980352A IT1298939B1 IT 1298939 B1 IT1298939 B1 IT 1298939B1 IT 98MI000352 A IT98MI000352 A IT 98MI000352A IT MI980352 A ITMI980352 A IT MI980352A IT 1298939 B1 IT1298939 B1 IT 1298939B1
Authority
IT
Italy
Prior art keywords
volatile memories
detection amplifier
feedback detection
static feedback
static
Prior art date
Application number
IT98MI000352A
Other languages
English (en)
Inventor
Rosa Francesco La
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT98MI000352A priority Critical patent/IT1298939B1/it
Priority to US09/256,603 priority patent/US6094394A/en
Publication of ITMI980352A1 publication Critical patent/ITMI980352A1/it
Application granted granted Critical
Publication of IT1298939B1 publication Critical patent/IT1298939B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
IT98MI000352A 1998-02-23 1998-02-23 Amplificatore di rilevamento statico a retroazione per memorie non volatili IT1298939B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT98MI000352A IT1298939B1 (it) 1998-02-23 1998-02-23 Amplificatore di rilevamento statico a retroazione per memorie non volatili
US09/256,603 US6094394A (en) 1998-02-23 1999-02-23 Sense amplifier for non-volatile memory devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT98MI000352A IT1298939B1 (it) 1998-02-23 1998-02-23 Amplificatore di rilevamento statico a retroazione per memorie non volatili

Publications (2)

Publication Number Publication Date
ITMI980352A1 ITMI980352A1 (it) 1999-08-23
IT1298939B1 true IT1298939B1 (it) 2000-02-07

Family

ID=11379043

Family Applications (1)

Application Number Title Priority Date Filing Date
IT98MI000352A IT1298939B1 (it) 1998-02-23 1998-02-23 Amplificatore di rilevamento statico a retroazione per memorie non volatili

Country Status (2)

Country Link
US (1) US6094394A (it)
IT (1) IT1298939B1 (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1148514A3 (de) * 2000-04-19 2003-03-26 Infineon Technologies AG Schaltungsanordnung zum Auslesen einer Speicherzelle mit einem ferroelektrischen Kondensator

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002063793A (ja) * 2000-08-18 2002-02-28 Fujitsu Ltd 半導体記憶装置の読み出し装置および読み出し方法
US7130213B1 (en) * 2001-12-06 2006-10-31 Virage Logic Corporation Methods and apparatuses for a dual-polarity non-volatile memory cell
US6842375B1 (en) 2001-12-06 2005-01-11 Virage Logic Corporation Methods and apparatuses for maintaining information stored in a non-volatile memory cell
US6992938B1 (en) 2001-12-06 2006-01-31 Virage Logic Corporation Methods and apparatuses for test circuitry for a dual-polarity non-volatile memory cell
US6850446B1 (en) 2001-12-06 2005-02-01 Virage Logic Corporation Memory cell sensing with low noise generation
US6788574B1 (en) 2001-12-06 2004-09-07 Virage Logic Corporation Electrically-alterable non-volatile memory cell
US6600690B1 (en) * 2002-06-28 2003-07-29 Motorola, Inc. Sense amplifier for a memory having at least two distinct resistance states
US6903987B2 (en) 2002-08-01 2005-06-07 T-Ram, Inc. Single data line sensing scheme for TCCT-based memory cells
US7324394B1 (en) 2002-08-01 2008-01-29 T-Ram Semiconductor, Inc. Single data line sensing scheme for TCCT-based memory cells
EP1505605A1 (en) * 2003-08-06 2005-02-09 STMicroelectronics S.r.l. Improved sensing circuit for a semiconductor memory including bit line precharging and discharging functions
US7038959B2 (en) * 2004-09-17 2006-05-02 Freescale Semiconductor, Inc. MRAM sense amplifier having a precharge circuit and method for sensing
US7636264B2 (en) * 2007-02-09 2009-12-22 Atmel Corporation Single-ended sense amplifier for very low voltage applications
US8068367B2 (en) 2007-06-15 2011-11-29 Micron Technology, Inc. Reference current sources
US7642815B2 (en) * 2007-09-14 2010-01-05 Atmel Corporation Sense amplifier
US7813201B2 (en) * 2008-07-08 2010-10-12 Atmel Corporation Differential sense amplifier
ATE557395T1 (de) * 2008-07-28 2012-05-15 Nxp Bv Strommessverstärker mit rückkopplungsschleife
US8169845B2 (en) * 2009-06-25 2012-05-01 Atmel Corporation Apparatus and methods for sense amplifiers
US8837220B2 (en) 2013-01-15 2014-09-16 United Microelectronics Corp. Nonvolatile memory and manipulating method thereof
US9384792B2 (en) 2014-04-09 2016-07-05 Globalfoundries Inc. Offset-cancelling self-reference STT-MRAM sense amplifier
US9373383B2 (en) 2014-09-12 2016-06-21 International Business Machines Corporation STT-MRAM sensing technique

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2694119B1 (fr) * 1992-07-24 1994-08-26 Sgs Thomson Microelectronics Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture.
FR2698998B1 (fr) * 1992-12-09 1995-02-03 Sgs Thomson Microelectronics Mémoire eeprom organisée en mots de plusieurs bits.
US5748534A (en) * 1996-03-26 1998-05-05 Invox Technology Feedback loop for reading threshold voltage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1148514A3 (de) * 2000-04-19 2003-03-26 Infineon Technologies AG Schaltungsanordnung zum Auslesen einer Speicherzelle mit einem ferroelektrischen Kondensator

Also Published As

Publication number Publication date
ITMI980352A1 (it) 1999-08-23
US6094394A (en) 2000-07-25

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Legal Events

Date Code Title Description
0001 Granted