Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
  • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
  • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
  • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Thyristors (AREA)
• Electrodes Of Semiconductors (AREA)
• Bipolar Transistors (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=15519890

Family Applications (1)

Country Status (5)

Families Citing this family (2)

Family Cites Families (8)

• 1988
  • 1988-06-20 JP JP63151501A patent/JPH01318263A/ja active Pending
• 1989
  • 1989-06-20 EP EP89111249A patent/EP0350670B1/de not_active Expired - Lifetime
  • 1989-06-20 US US07/368,773 patent/US5132769A/en not_active Expired - Fee Related
  • 1989-06-20 KR KR1019890008464A patent/KR970003899B1/ko not_active IP Right Cessation
  • 1989-06-20 DE DE68921258T patent/DE68921258T2/de not_active Expired - Fee Related

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