GB1089407A - Improvements in thyristors - Google Patents
Improvements in thyristorsInfo
- Publication number
- GB1089407A GB1089407A GB43430/65A GB4343065A GB1089407A GB 1089407 A GB1089407 A GB 1089407A GB 43430/65 A GB43430/65 A GB 43430/65A GB 4343065 A GB4343065 A GB 4343065A GB 1089407 A GB1089407 A GB 1089407A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- oct
- voltage
- bevelled
- order
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000903 blocking effect Effects 0.000 abstract 5
- 230000001154 acute effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002939 deleterious effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/241—Asymmetrical thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Landscapes
- Thyristors (AREA)
Abstract
1,089,407. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Oct. 6, 1966 [Oct. 13, 1965], No. 43430/65. Heading H1K. The lateral edges of a silicon thyristor are bevelled so that the parallel planes of the forward blocking junction B and reverse blocking junction C subtend equal acute angles in the range 10-50 degrees with the bevelled edges. The acute angle at the forward blocking junction B lies in the more lightly doped of the two regions 2, 3 comprising the junction, in order to minimize the deleterious surface field at this junction. A further highly-doped N<SP>+</SP>-type region (16), Fig. 2 (not shown), may be included between the P<SP>+</SP> and N regions forming the reverse blocking junction (C), in order to permit a higher forward blocking voltage and to limit the voltage across the junction (C).
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB43430/65A GB1089407A (en) | 1965-10-13 | 1965-10-13 | Improvements in thyristors |
| FR79655A FR1496453A (en) | 1965-10-13 | 1966-10-12 | Silicon thyratrons |
| NL6614367A NL6614367A (en) | 1965-10-13 | 1966-10-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB43430/65A GB1089407A (en) | 1965-10-13 | 1965-10-13 | Improvements in thyristors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1089407A true GB1089407A (en) | 1967-11-01 |
Family
ID=10428720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB43430/65A Expired GB1089407A (en) | 1965-10-13 | 1965-10-13 | Improvements in thyristors |
Country Status (3)
| Country | Link |
|---|---|
| FR (1) | FR1496453A (en) |
| GB (1) | GB1089407A (en) |
| NL (1) | NL6614367A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01318263A (en) * | 1988-06-20 | 1989-12-22 | Meidensha Corp | semiconductor element |
-
1965
- 1965-10-13 GB GB43430/65A patent/GB1089407A/en not_active Expired
-
1966
- 1966-10-12 NL NL6614367A patent/NL6614367A/xx unknown
- 1966-10-12 FR FR79655A patent/FR1496453A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1496453A (en) | 1967-09-29 |
| NL6614367A (en) | 1967-04-14 |
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