NL6614367A - - Google Patents
Info
- Publication number
- NL6614367A NL6614367A NL6614367A NL6614367A NL6614367A NL 6614367 A NL6614367 A NL 6614367A NL 6614367 A NL6614367 A NL 6614367A NL 6614367 A NL6614367 A NL 6614367A NL 6614367 A NL6614367 A NL 6614367A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/241—Asymmetrical thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB43430/65A GB1089407A (en) | 1965-10-13 | 1965-10-13 | Improvements in thyristors |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6614367A true NL6614367A (en) | 1967-04-14 |
Family
ID=10428720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6614367A NL6614367A (en) | 1965-10-13 | 1966-10-12 |
Country Status (3)
Country | Link |
---|---|
FR (1) | FR1496453A (en) |
GB (1) | GB1089407A (en) |
NL (1) | NL6614367A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5132769A (en) * | 1988-06-20 | 1992-07-21 | Kabushiki Kaisha Meidensha | Semiconductor device with high withstand voltage |
-
1965
- 1965-10-13 GB GB43430/65A patent/GB1089407A/en not_active Expired
-
1966
- 1966-10-12 NL NL6614367A patent/NL6614367A/xx unknown
- 1966-10-12 FR FR79655A patent/FR1496453A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5132769A (en) * | 1988-06-20 | 1992-07-21 | Kabushiki Kaisha Meidensha | Semiconductor device with high withstand voltage |
Also Published As
Publication number | Publication date |
---|---|
FR1496453A (en) | 1967-09-29 |
GB1089407A (en) | 1967-11-01 |